HS4040xQx Series RoHS Description The HS4040xQx series of SCRs offer fast turn-off time (tq) characteristics required for applications such as power inverters, switching regulator, and high frequency pulse circuits. These fast turn-off time SCRs offer high dv/dt and high di/dt characteristics required in higher frequency (>00 PPS) switching circuits and a higher temperature environment. Features & Benefits Main Features Symbol Value Unit I T(RMS) 40 V DRM /V RRM 400 V I GT 15 to 65 m RoHS compliant Voltage capability up to 400 V Surge capability up to 520 pplications TO-220 and TO-263 packages EC-Q1 Fully compliant 150 C maximum junction temperature Fast turn-off time SCRs are ideal for multi phase voltage regulator circuits, DC/C inverters, and higher frequency pulsing power supplies. Schematic Symbol K G bsolute Maximum Ratings Symbol Parameter Test Conditions Value Unit I T(RMS) RMS on-state current T C = 115 C 40 I T(V) verage on-state current T C = 115 C 25.0 I TSM Peak non-repetitive surge current single half cycle; f = 50Hz; (initial) = 25 C single half cycle; f = 60Hz; (initial) = 25 C I 2 t I 2 t Value for fusing t p = 8.3 ms 1122 2 s di/dt Critical rate of rise of on-state current f = 60Hz ; = 150 C 175 /μs I GM Peak gate current = 150 C 3.5 P G(V) verage gate power dissipation = 150 C 0.8 W T stg Storage temperature range -40 to 150 C Operating junction temperature range -40 to 150 C V DSM /V RSM Peak non-repetitive blocking voltage Pw=0 μs 500 V 430 520 HS4040xQx Series
Electrical Characteristics ( = 25 C, unless otherwise specified) Symbol Test Conditions HS4040xQ HS4040xQ2 HS4040xQ3 Unit I GT MX. 35 45 65 m V D = 12V; R L = 30 Ω MIN. 15 30 38 V GT MX. 1.5 V I GT V D = 12V; R L = 30Ω; = -40 C MX. 75 95 160 m dv/dt V D = V DRM ; gate open; = 150 C MIN. 550 V/μs V GD V D = V DRM ; R L = 3.3 kω; = 150 C MIN. 0.2 V I H I T = 400m (initial) MX. 70 120 200 m t q I T =0.5; t p =50µs; dv/dt=5v/µs; di/dt=-30/µs MX. 15 12 5 μs t gt I G = 2 x I GT ; PW = 15µs; I T = 80 TYP. 3.0 3.5 μs Static Characteristics Symbol Test Conditions HS4040xQ HS4040xQ2 HS4040xQ3 Unit V TM I T = 80; t p = 380μs MX. 1.6 1.8 V I DRM / I RRM V DRM / V RRM = 25 C = 125 C MX. 2000 = 150 C 4000 μ Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (C) 0.6 C/W Figure 1: Normalized DC Holding Current vs. Junction Temperature Figure 2: Normalized DC Gate Trigger Current vs. Junction Temperature 3.0 3.0 Ratio of IH / IH ( = 25ºC) 2.5 2.0 1.5 0.5 Ratio of IGT / IGT ( = 25ºC) 2.5 2.0 1.5 0.5-40 -15 35 60 85 1 135 150 Junction Temperature ( ) (ºC) -40-15 35 60 85 1 135 150 Junction Temperature ( ) (ºC) HS4040xQx Series
Figure 3: Normalized DC Gate Trigger Voltage vs. Junction Temperature Figure 4: On-State Current vs. On-State Voltage (Typical) Ratio of VGT / VGT ( = 25ºC) 1.4 1.2 0.8 0.6 0.4 0.2-40 -15 35 60 85 1 135 150 Junction Temperature ( ) (ºC) Postitive or Negative Instantaneous On-State Current (I T ) - mps 90 80 70 60 50 40 30 20 0 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Postitive or Negative Instantaneous On-State Voltage (V T ) - Volts Figure 5: Power Dissipation (Typical) vs. RMS On-State Current verage On -State Power Dissipation [P D(V) ] - (Watts) 50 45 40 35 30 25 20 15 5 0 0 5 15 20 25 30 35 40 RMS On - State Current [I T(RMS) ]-(mps) Figure 6: Maximum llowable Case Temperature vs. RMS On-State Current Maximum llowable Case Temperature (T C )- C 150 145 140 135 130 125 120 115 1 5 0 CURRENT WVEFORM: Sinusoidal 95 LOD: Resistive or Inductive CONDUCTION NGLE: 180 90 0 5 15 20 25 30 35 40 45 50 RMS On-State Current [I T(RMS) ] - mps Figure 7: Maximum llowable Case Temperature vs. verage On-State Current Figure 8: Peak Capacitor Discharge Current Maximum llowable Case Temperature (T C ) - C 150 145 140 135 130 125 120 115 1 CURRENT WVEFORM: Sinusoidal 5 LOD: Resistive or Inductive CONDUCTION NGLE: 180 0 0 5 15 20 25 verage On-State Current [I T(VE) ] - mps Peak Discharge Current (I TM ) - mps 000 00 0 I TRM t W 0.5.0 5 Pulse Current Duration (t w ) - ms HS4040xQx Series
Temperature Teccor brand Thyristors Figure 9: Peak Capacitor Discharge Current Derating 1.2 Normalized Peak Current 0.8 0.6 0.4 0.2 0 25 50 75 0 125 150 Case Temperature (T C ) - C Figure : Surge Peak On-State Current vs. Number of Cycles 00 Peak Surge (Non-repetitive) On-state Current (I TSM ) mps 0 SUPPLY FREQUENCY: 60 Hz Sinusoidal LOD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. 1 0 00 Surge Current Duration -- Full Cycles Soldering Parameters Reflow Condition - Temperature Min (T s(min) ) 150 C Pb Free assembly T P Ramp-up t P Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) 60 180 secs verage ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) 60 150 seconds Peak Temperature (T P ) 260 +0/-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) 20 40 seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 280 C HS4040xQx Series
Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations 0% Matte Tin-plated UL recognized epoxy meeting flammability classification V-0 Copper lloy Careful selection of the correct device for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test C Blocking Biased Temperature & Humidity Temperature Cycling Intermittent Operational Life utoclave (Pressure Cooker Test) Resistance to Solder Heat Solderability Specifications and Conditions MIL-STD-750, M-40, Cond pplied Peak C voltage @ 150 C for 08 hours EI / JEDEC, JESD22-1 08 hours; 320V - DC: 85 C; 85% rel humidity JESD22-4 ppendix 6-55 C to 150 C, 15-minute dwell, 00 cycles T =25C, Δ 0 C, 08hrs EI/JEDEC: JESD22-2 121 C, 0%RH, 15psig, 96hours JESD22-111: 260 C, seconds NSI/J-STD-002, category 3, Test Dimensions TO-220B (R-Package) Non-Isolated Mounting Tab Common with Center Lead E B C D NODE T C MESURING POINT O P 8.13.320 RE (REF.) 0.17 IN 2 13.36.526 Dimension Inches Millimeters Min Max Min Max 0.380 0.420 9.65.67 B 0.5 0.115 2.67 2.92 C 0.230 0.250 5.84 6.35 D 0.590 0.620 14.99 15.75 E 0.142 0.147 3.61 3.73 G F L H R NOTCH IN GTE LED TO ID. NON-ISOLTED TB F 0.1 0.130 2.79 3.30 G 0.540 0.575 13.72 14.61 H 25 35 0.64 0.89 J 0.195 0.205 4.95 5.21 CTHODE NODE K J GTE N M Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). K 95 0.5 2.41 2.67 L 60 75 1.52 1.91 M 85 95 2.16 2.41 N 18 24 0.46 0.61 O 0.178 0.188 4.52 4.78 P 45 60 1.14 1.52 R 38 48 0.97 1.22 HS4040xQx Series
Teccor brand Thyristors Dimensions TO- 263 (N-package) D 2 -Pak Surface Mount B NODE V T C MESURING POINT C E RE: 0.11 in 2 Dimension Inches Millimeters Min Max Min Max 8.41.331 0.360 0.370 9.14 9.40 B 0.380 0.420 9.65.67 S C 0.178 0.188 4.52 4.78 W U D 25 35 0.63 0.89 CTHODE GTE K J E 48 55 1.22 1.40 G 11.68.460 D F 2.16.085 H 8.13.320 F 60 75 1.52 1.91 G 95 0.5 2.41 2.67 H 83 93 2.11 2.36 J 18 24 0.46 0.61 16.89.665 3.81.150 8.89.350 6.60.260 2.03.080 1.40.055 K 90 0.1 2.29 2.79 S 0.590 0.625 14.99 15.87 V 35 45 0.89 1.14 U 02 5 0.25 W 40 70 2 1.78 Part Numbering System Part Marking System DEVICE TYPE HS: SCR HS4040 R Q 56 Lead Form Dimensions xx: Lead Form Option TO-220 B - (R Package) TO-263 (N Package) VOLTGE RTING 40: 400V CURRENT RTING 40: 40 TURN-OFF TIME [blank]: 15μs 2: 12μs 3: 5μs LOW TURN OFF TIME TYPE HS4040RQ3 YM PCKGE TYPE R: TO-220 (Non-isolated) N: TO-263 (D2 - Pak) EC-Q1 Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code HS4040xQx Series
Product Selector Voltage Part Number 400V Gate Sensitivity Type Package HS4040RQ X 15-35 Standard SCR TO-220B HS4040NQ X 15-35 Standard SCR TO-263 HS4040RQ2 X 30-45 Standard SCR TO-220B HS4040NQ2 X 30-45 Standard SCR TO-263 HS4040RQ3 X 38-65 Standard SCR TO-220B HS4040NQ3 X 38-65 Standard SCR TO-263 Packing Options Part Number Marking Weight Packing Mode Base Quantity HS4040RQTP HS4040RQ 2.2g Tube 500 (50 per tube) HS4040RQ2TP HS4040RQ2 2.2g Tube 500 (50 per tube) HS4040RQ3TP HS4040RQ3 2.2g Tube 500 (50 per tube) HS4040NQRP HS4040NQ 1.6g Embossed Carrier 500 HS4040NQ2RP HS4040NQ2 1.6g Embossed Carrier 500 HS4040NQ3RP HS4040NQ3 1.6g Embossed Carrier 500 Reel Pack (RP) for TO-263 Embossed Carrier Specifications Meets all EI-481-2 Standards 0.63 (16.0) 0.157 (4.0) 59 DI (1.5) Gate Cathode 0.945 (24.0) 0.827 (2) * * Cover tape node 0.512 (13.0) rbor Hole Dia. 12.99 (33) Dimensions are in inches (and millimeters). 1 (25.7) Direction of Feed HS4040xQx Series