Series 300A Dual IGBT RoHS Features High short circuit capability,self limiting short circuit current IGBT 3 CHIP(Trench+Field Stop technology) (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses Applications Agency Approvals Motor drives Inverter SMPS and UPS Welder AGENCY AGENCY FILE NUMBER Converter Induction Heating E71639 Module Characteristics ( Symbol Parameters Test Conditions Min Typ Max Unit max) Max. Junction Temperature 150 C op Operating Temperature -40 125 C T stg Storage Temperature -40 125 C V isol Insulation Test Voltage AC, t=1min 3000 V CTI Comparative Tracking Index Module case exposed to 0.1% ammonium chloride solution per UL and IEC standards 350 V Torque Module-to-Sink Recommended (M6) 3 5 N m Torque Module Electrodes Recommended (M6) 2.5 5 N m Weight 320 g Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit IGBT S Collector - Emitter Voltage =25 C 1200 V V GES Gate - Emitter Voltage ±20 V DC Collector Current =25 C 480 A =80 C 300 A M Repetitive Peak Collector Current t p =1ms 600 A P tot Power Dissipation Per IGBT 1450 W Diode V RRM Repetitive Reverse Voltage =25 C 1200 V I F(AV) Average Forward Current =25 C 480 A =80 C 300 A I FRM Repetitive Peak Forward Current t p =1ms 600 A I 2 t =125 C, t=10ms, V R =0V 18000 A 2 s Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 1
Electrical and Thermal Specifications ( Symbol Parameters Test Conditions Min Typ Max Unit IGBT V GE(th) Gate - Emitter Threshold Voltage =V GE, =12mA 5.0 5.8 6.5 V (sat) Collector - Emitter =300A, V GE =15V, =25 C 1.7 V Saturation Voltage =300A, V GE =15V, =125 C 1.9 V ES Collector Leakage Current =1200V, V GE =0V, =25 C 1 ma =1200V, V GE =0V, =125 C 5 ma I GES Gate Leakage Current =0V,V GE =±15V, =125 C -400 400 μa R Gint Intergrated Gate Resistor 2.5 Ω Q ge Gate Charge =600V, =±15V 2.8 μc C ies Input Capacitance 21 nf =25V, V GE =0V, f =1MHz C res Reverse Transfer Capacitance 0.85 nf t d(on) Turn - on Delay Time =25 C 160 ns =125 C 170 ns t r Rise Time V CC =600V =25 C 40 ns =125 C 45 ns =300A T t d(off) Turn - off Delay Time Vj =25 C 450 ns =125 C 520 ns R G =2.4Ω T t f Fall Time Vj =25 C 100 ns V GE =±15V =125 C 160 ns E on Turn - on Energy Inductive Load =25 C 16.5 mj =125 C 25 mj E off Turn - off Energy =25 C 24.5 mj =125 C 37 mj I SC Short Circuit Current t psc 10μS, V GE =15V =125 C,V CC =900V 1200 A R thjc Junction-to-Case Thermal Resistance (Per IGBT) 0.085 K/W Diode V F Forward Voltage I F =0V, =25 C 1.65 V I F =0V, =125 C 1.65 V I RRM Max. Reverse Recovery Current I F =300A, V R =600V 270 A Q rr Reverse Recovery Charge d if /dt=-6000a/μs 56 μc E rec Reverse Recovery Energy =125 C 26 mj R thjcd Junction-to-Case Thermal Resistance (Per Diode) 0.15 K/W 2
Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 600 500 V GE =15V VGE=19V VGE=17V VGE=15V IC (A) 400 300 =25 C VGE=13V VGE=11V 200 =125 C VGE=9V 100 0 0 0.5 1.0 1.5 2.0 2.5 V 3.0 Figure 3: Typical Transfer characteristics Figure 4: Switching Energy vs. Gate Resistor Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area 3
Figure 7: Diode Forward Characteristics Figure 8: Switching Energy vs. Gate Resistort Figure 9: Switching Energy vs. Forward Current Figure 10: Transient Thermal Impedance 4
Dimensions-Package D Circuit Diagram and Pin Assignment Packing Options Part Number Marking Weight Packing Mode M.O.Q 320g Bulk Pack 30 Part Numbering System Part Marking System PRODUCT TYPE M: Power Module MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200V CURRENT RATING ASSEMBLY SITE WAFER TYPE CIRCUIT TYPE B: 2x(IGBT+FWD) PACKAGE TYPE 300: 300A D: Package D 5