SGT160N60W3/SGF160N60W3/SGW160N60W3

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Transcription:

600V, 22A, 0.160Ω Features RDS(on) = 0.160Ω (Max.)@ VGS = 10V, ID = 11A Ultra low gate charge ( Typ. Qg = 45nC) Low effective output capacitance 100% avalanche tested RoHS compliant Description The WinMOS MOSFET, SG s W3 series of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, WinMOS provides world class Rsp, superior switching performance and ruggedness. This WinMOS fits the industry s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. SGT160N60W3/SGF160N60W3/SGW160N60W3 Rev. 1.5 1 / 11

Maximum Ratings Parameter Conditions Value Unit Continuous drain current Id Tc=25 22 Tc=100 13 A Pulsed drain current Id,pulse Tc=25 60 Avalanche energy, single pulse Eas Id=10A, VDD=50V 780 mj Avalanche energy, repetitive Ear Id=22A, VDD=50V 1 mj Avalanche current Iar 14 A MOSFET dv /dt ruggedness dv/dt VDS=480V,ID=11A, Tj=125 15.6 V/ns Gate source voltage Vgs static ±20 V AC (f >1 Hz) ±30 V Power dissipation Ptot Tc=25 240 W Operating and storage temperature Tj,Tstg -55~150 Thermal Characteristics Parameter SGX160N60W3 Unit Junction to case RthJC 0.52 /W Junction to ambient RthJA 60.5 /W Soldering temperature, wavesoldering only allowed at leads Tsold 280 SGT160N60W3/SGF160N60W3/SGW160N60W3 Rev. 1.5 2 / 11

Electrical Characteristics at Tj=25 Parameter Conditions Min Typ Max Unit Drain-source Breakdown voltage V(BR)Dss Vgs=0V,ID=250u A 630 --- --- V Gate threshold voltage Vgs(th) Id=250uA,Vds=Vgs 2 3 4 V Zero gate voltage drain current IDSS VDS=600V, Vgs=0V Tj=25 VDS=600V, Vgs=0V Tj=150 --- --- 1 --- --- 10 ua Gate source leakage current Igss Vgs=30V,Vds=0V --- --- 100 na Drain source on-state resistance R DS(on) Vgs=10V, ID=11A Tj=25 Vgs=10V, ID=11A Tj=150 --- 0.125 0.16 --- 0.43 --- Ω Gate resistance Rg f=1 MHz, open drain --- 0.5 --- Ω Dynamic / Switching Characteristics Parameter Conditions Min Typ Max Unit input capacitance Ciss --- 2100 --- Output capacitance Coss Vds=100V Vgs=0V f=1mhz --- 500 --- Reverse transfer capacitance Crss --- 110 --- pf Turn on delay time Td(on) --- 20 --- rise time Tr Vdd=400V, Vgs=0/10V --- 15 --- Id=22A Turn off delay time Td(off) Rg=2.5 ohm --- 45 --- ns Fall time Tf --- 10 --- Gate to source charge Qgs --- 12 --- Gate to drain charge Qgd Vdd=400V,Id=22A --- 16 --- Gate charge total Qg Vgs=0 to 10V --- 45 --- nc Gate plateau voltage V plateau --- 5.1 --- V SGT160N60W3/SGF160N60W3/SGW160N60W3 Rev. 1.5 3 / 11

Drain-Source Diode Characteristics Parameter Conditions Min Typ Max Unit Maximum Continuous Drain to Source Diode Forward current Isd Tc=25 --- --- 22 A Maximum Pulsed Drain to Source Diode Forward current ISDM Tc=25 --- --- 60 A Drain to Source Diode Forward Voltage VSD VGS=0V, ISD=11A, TJ =25 C --- 0.75 1.2 V Reverse Recovery Time Reverse Recovery Charge Peak reverse recovery current Trr --- 472 --- ns Qrr VDD=480V,VGS=0V, ISD=11A dif/dt = 100A/μs TJ =25 C --- 5 --- μc I rrm --- 60 --- A SGT160N60W3/SGF160N60W3/SGW160N60W3 Rev. 1.5 4 / 11

ID (A) RDSON( Ω) SGT160N60W3/SGF160N60W3/SGW160N60W3 Typical Performance Characteristics 1 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t 2 Typ. output characteristics 3 Typ. drain-source on-state resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=150 C parameter: V GS parameter: V GS 1.5 1.4 60 1.3 1.2 4V 4.5 5V 1.1 5.5 45 20V 10V 7V 1 0.9 6V 6.5 20V 30 6V 5.5V 5V 0.8 0.7 4.5V 0.6 15 0.5 0.4 0 0 5 10 15 20 25 VDS (V) 0.3 0 5 10 15 20 25 30 35 40 ID(A SGT160N60W3/SGF160N60W3/SGW160N60W3 Rev. 1.5 5 / 11

VGS (V) VSD(V RDSON(mΩ) ID ( SGT160N60W3/SGF160N60W3/SGW160N60W3 4 Drain-source on-state resistance 5 Typ. transfer characteristics R DS(on)=f(T j); I D=11 A; V GS=10 V I D=f(V GS); V DS >2 I D R DS(on)max parameter: T j 0.6 0.5 0.4 0.3 0.2 0.1 0 25 50 75 100 125 150 Tj( ) 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 VGS ( 6 Typ. gate charge 7 Forward characteristics of reverse diode V GS=f(Qgate); I D=22 A pulsed I D=f(V SD) parameter: V DD parameter: T j 10 3 9 8 0.2VDS max 0.8VDS max 2.5 25 150 7 6 2 5 4 1.5 3 2 1 1 0 0 5 10 15 20 25 30 35 40 45 50 0.5 0 5 10 15 20 25 30 35 40 45 50 QG (nc) ID (A SGT160N60W3/SGF160N60W3/SGW160N60W3 Rev. 1.5 6 / 11

BVDSS (norm) Capacltance SGT160N60W3/SGF160N60W3/SGW160N60W3 8 Drain-source breakdown voltage 9 Typ. capacitances V BR(DSS)=f(T j); I D=0.25 ma C =f(v DS); V GS=0 V; f =100 KHz 1.2 1.1 1 0.9 1000 900 800 700 600 500 400 300 200 100 Crss Coss Ciss 0.8-75 -50-25 0 25 50 75 100 125 150 TJ ( ) 0 0 10 20 30 40 50 60 VDS ( SGT160N60W3/SGF160N60W3/SGW160N60W3 Rev. 1.5 7 / 11

Mechanical Dimensions TO-220-F-3L Min. Norm. Max. Min. Norm. Max. E 10.04 10.20 10.36 ФP1 1.40 1.50 1.60 A 4.50 4.70 4.90 ФP2 1.15 1.20 1.25 A1 2.34 2.54 2.74 ФP3 3.45REF A2 0.95 1.05 1.15 θ1 5 7 9 A4 2.65 2.75 2.85 θ2 45 A5 1.00REF DEP 0.05 0.10 0.15 c 0.42 0.50 0.58 F1 1.90 2.00 2.10 c1 0.42 0.50 0.58 F2 13.80 13.90 14.00 D 15.67 15.87 16.07 F3 3.20 3.30 3.40 Q 9.20REF F4 5.30 5.40 5.50 H1 6.70REF G1 6.60 6.70 6.80 e 2.54BSC G2 6.90 7.00 7.10 ФP 3.183REF G3 1.10 1.30 1.50 L 12.78 12.98 13.18 b1 1.05 1.20 1.35 L1 3.25 3.45 3.65 b2 0.70 0.80 0.85 D1 9.17REF SGT160N60W3/SGF160N60W3/SGW160N60W3 Rev. 1.5 8 / 11

Mechanical Dimensions TO-220-FB-3L Min. Norm. Max. Min. Norm. Max. A 4.40 4.57 4.70 ФP1 1.40 1.50 1.60 A1 1.27 1.30 1.37 e 2.54BSC A2 2.35 2.40 2.50 e1 5.08BSC b 0.77 0.80 0.90 H1 6.40 6.50 6.60 b2 1.17 1.27 1.36 L 12.75 13.50 13.65 c 0.48 0.50 0.56 L1 3.10 3.30 D 15.40 15.60 15.80 L2 2.50REF D1 9.00 9.10 9.20 ФP 3.50 3.60 3.63 DEP 0.05 0.10 0.20 Q 2.73 2.80 2.87 E 9.80 10.00 10.20 θ1 5 7 9 E1 8.70 θ2 1 3 5 E2 9.80 10.00 10.20 θ3 1 3 5 SGT160N60W3/SGF160N60W3/SGW160N60W3 Rev. 1.5 9 / 11

Mechanical Dimensions TO-247-3L Min. Norm. Max. Min. Norm. Max. A 4.90 5.00 5.10 e 5.44BSC A1 2.31 2.41 2.51 h 0.05 0.20 A2 1.90 2.0 2.10 L 19.80 19.92 20.10 b 1.16 1.21 1.26 L1 4.30 b1 1.96 2.01 2.06 ΦP 3.50 3.60 3.70 b4 2.96 3.01 3.06 ΦP1 7.30 c 0.59 0.61 0.66 ΦP2 2.40 2.50 2.60 D 20.90 21.00 21.10 Q 5.60 5.80 6.00 D1 16.25 16.55 16.85 S 6.15BSC D2 1.05 1.20 1.35 T 9.80 10.20 E 15.70 15.80 15.90 U 6.00 6.40 E1 13.10 13.30 13.50 θ2 4 5 6 E2 4.90 5.00 5.10 θ3 1 1.5 E3 2.40 2.50 2.60 θ4 14 15 16 SGT160N60W3/SGF160N60W3/SGW160N60W3 Rev. 1.5 10 / 11

Revision History Version Update date Revised Content Revised by Confirmed by V1.0 2013-4-12 Original ZhangFeng Alan 1. Qg Spec revised, 3.5 4.5 nc 2. Rthjc spec revised, 1.2 0.52 /W 3. Rdosn at 150 spec new added. 4. Coss spec revised, 1000 V 1.5 2013-5-30 500pF, Crss 60 110pF ZhangFeng Alan 5. Switch related spec revised, Tdon 9 20ns; tr 5 15ns; Tf 4.5 10ns 6. Qgs spec revised, 4.7 12nC 7. reverse diode Qrr spec changed, 10.2 5 μc SGT160N60W3/SGF160N60W3/SGW160N60W3 Rev. 1.5 11 / 11

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