4V Drive Nch MOSFET RSD050N06 Structure Silicon N-channel MOSFET Features ) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. Applications Switching Packaging specifications Package CPT3 Type Code TL Basic ordering unit (pieces) 2500 Absolute maximum ratings () Symbol Limits Unit Drain-source voltage V DSS 60 V Gate-source voltage V GSS 20 V Drain current Continuous I D 5.0 A Pulsed I DP * 5 A Source current Continuous I S 5.0 A (Body Diode) Pulsed I SP * 5 A Power dissipation P D *2 5 W Channel temperature T ch 50 C Range of storage temperature T stg 55 to +50 C * Pw s, Duty cycle % *2 T c =25 C Thermal resistance Symbol Limits Unit Channel to Case R * th (ch-c) 8.33 C / W * T c =25 C Dimensions (Unit : mm) CPT3 (SC-63) <SOT-428> Inner circuit () Gate (2) Drain (3) Source * ESD Protection Diode *2 Body Diode Data Sheet 2 () (2) (3) 204 ROHM Co., Ltd. All rights reserved. /6 204.02 - Rev.B
Electrical characteristics () Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I GSS - - A V GS = 20V, V DS =0V Drain-source breakdown voltage V (BR)DSS 60 - - V I D =ma, V GS =0V Zero gate voltage drain current I DSS - - A V DS =60V, V GS =0V Gate threshold voltage V GS (th).0-3.0 V V DS =V, I D =ma - 78 9 I D =5.0A, V GS =V Static drain-source on-state R * - 94 3 m I D =5.0A, resistance DS (on) - 0 40 I D =5.0A, Forward transfer admittance l Y fs l* 3.5 - - S I D =5.0A, V DS =V Input capacitance C iss - 290 - pf V DS =V Output capacitance C oss - 90 - pf V GS =0V Reverse transfer capacitance C rss - 35 - pf f=mhz Turn-on delay time t d(on) * - 8 - ns I D =2.5A, V DD 30V Rise time t r * - 7 - ns V GS =V Turn-off delay time t d(off) * - 26 - ns R L =2 Fall time t f * - 8 - ns R G = Total gate charge Q g * - 8.0 - nc V DD 30V Gate-source charge Q gs * -.4 - nc I D =5.0A Gate-drain charge Q gd * -.4 - nc V GS =V *Pulsed Body diode characteristics (Source-Drain) () Symbol Min. Typ. Max. Unit Forward Voltage V SD * - -.2 V I s =5.0A, V GS =0V *Pulsed Conditions 204 ROHM Co., Ltd. All rights reserved. 2/6 204.02 - Rev.B
Electrical characteristic curves (Ta=25 C) Fig. Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 5.0 2.5.0 7.5 5.0 2.5 V GS =.0V V GS =3.5V 0.0 0 0.2 0.4 0.6 0.8 00 0 Drain-Source Voltage : V DS [V] Fig.3 vs. Drain Current 0.0 0. 00 0 V GS =V Fig.5 vs. Drain Current T a =25 C 5.0 2.5.0 7.5 5.0 2.5 V GS =.0V 0.0 0 2 4 6 8 00 0 00 Drain-Source Voltage : V DS [V] V GS =3.5V V GS =3.0V Fig.4 vs. Drain Current V GS =V T a =25 C 0.0 0. 0 Fig.6 vs. Drain Current T a =25 C 0.0 0. 0.0 0. 204 ROHM Co., Ltd. All rights reserved. 3/6 204.02 - Rev.B
Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics Forward Transfer Admittance Y fs [S] Source Current : Is [A] Switching Time : t [ns] 0. V DS =V 0.0 0.0 0. 0. 0.0 0.00 V GS =0V T a =25 C Fif.9 Source Current vs. Source-Drain Voltage T a =25 C 0.000 0.0 0.5.0 00 0 t d(off) Source-Drain Voltage : V SD [V] Fig. Switching Characteristics t f t d(on) t r V DD 30V V GS =V R G =Ω Pulsed Drain Currnt : I D [A] Gate-Source Voltage : V GS [V] 0. 0.0 0.00 0.000 V DS =V T a =25 C 0.0000 0.0 0.5.0.5 2.0 2.5 3.0 3.5 00 500 0 Gate-Source Voltage : V GS [V] Fig. vs. Gate-Source Voltage 2 8 6 4 2 I D =2.5A I D =5.0A 0 2 4 6 8 2 4 6 8 20 V DD =30V I D =5A Pulsed Gate-Source Voltage : V GS [V] Fig.2 Dynamic Input Characteristics 0.0 0. 0 0 2 4 6 8 Total Gate Charge : Q g [nc] 204 ROHM Co., Ltd. All rights reserved. 4/6 204.02 - Rev.B
Fig.3 Typical Capacitance vs. Drain-Source Voltage Fig.4 Maximum Safe Operating Area 00 f=mhz V GS =0V 0 Operation in this area is limited by R DS(on) ( V GS = V ) Capacitance : C [pf] Normalized Transient Thermal Resistance : r(t) 0 T c =25 C C rss Single Pulse 0.0 0.0 0. 0 0. 0 Drain-Source Voltage : V DS [V] C iss C oss Fig.5 Normalized Transient Thermal Resistance v.s. Pulse Width 0. 0.0 T c =25 C Single Pulse Rth (ch-c) =8.33 C/W Rth (ch-c) (t)=r(t) Rth (ch-c) 0.00 0.000 0.00 0.0 0. 0 00 Pulse width : Pw (s) Drain Current : I D [ A ] 0. Drain-Source Voltage : V DS [ V ] P W = 0μs P W = ms P W = ms DC Operation 204 ROHM Co., Ltd. All rights reserved. 5/6 204.02 - Rev.B
Measurement circuits RG D.U.T. ID RL VDD VDS Fig.- Switching Time Measurement Circuit IG(Const.) D.U.T. ID RL VDD VDS Fig.2- Gate Charge Measurement Circuit VDS td(on) VG Qgs % 50% ton Pulse width 90% 50% % % 90% 90% tr Qgd Qg td(off) toff Fig.-2 Switching Waveforms tf Charge Fig.2-2 Gate Charge Waveform 204 ROHM Co., Ltd. All rights reserved. 6/6 204.02 - Rev.B