P-Channel Advanced Power MOSFET Features -2V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-4.5V R DS (ON) =65mΩ(Typ.)@V GS =-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G Applications Load Switch Power Management G SOT89 D Absolute Maximum Ratings S P-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T A =25 C Unless Otherwise Noted) V DSS Drain-Source Voltage -2 V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 5 C T STG Storage Temperature Range -55 to 5 C I S Diode Continuous Forward Current T A =25 C -.2 A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T A =25 C -2 A 2 I D Continuous Drain Current(V GS =-4.5V) T A =25 C -5 T A =7 C -3.9 A P D Maximum Power Dissipation T A =25 C.25 T A =7 C.8 W R θjc Thermal Resistance-Junction to Case C/W 3 R θja Thermal Resistance-Junction to Ambient C/W Drain-Source Avalanche Ratings 4 E AS Avalanche Energy, Single Pulsed 56 mj Rev. C DEC., 23 www.ruichips.com
Electrical Characteristics (T A =25 C Unless Otherwise Noted) RU2P5E Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-25µA -2 V I DSS V DS =-6V, V GS =V - Zero Gate Voltage Drain Current µa T J =25 C -3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-25µA -.5 -.5 V I GSS Gate Leakage Current V GS =±2V, V DS =V ± na R 5 DS(ON) V GS =-4.5V, I DS =-5A 5 6 mω Drain-Source On-state Resistance VGS =-3V, I DS =-4A 65 8 mω Diode Characteristics 5 V SD Diode Forward Voltage I SD =-5A, V GS =V -.2 V trr Reverse Recovery Time ISD=-5A, dlsd/dt=a/µs ns Qrr Reverse Recovery Charge 6 nc Dynamic Characteristics 6 R G Gate Resistance V GS =V,V DS =V,F=MHz. Ω C iss Input Capacitance V GS =V, 545 C oss Output Capacitance V DS =-V, Frequency=.MHz 9 pf C rss Reverse Transfer Capacitance 45 t d(on) Turn-on Delay Time 6 t r Turn-on Rise Time V DD =-V, I DS =-5A, 2 t d(off) Turn-off Delay Time V GEN =-4.5V, R G =6Ω 25 ns t f Turn-off Fall Time 4 Gate Charge Characteristics 6 Q g Total Gate Charge 6.8 Q gs Gate-Source Charge V DS =-6V, V GS =-4.5V, I DS =-5A.4 Q gd Gate-Drain Charge 2.3 nc Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. 3When mounted on inch square copper board, t sec. The value in any given application depends on the user's specific board design. 4Limited by T Jmax, I AS =-5A, V DD =-6V, R G = 5Ω, Starting T J = 25 C. 5Pulse test;pulse width 3µs, duty cycle 2%. 6Guaranteed by design, not subject to production testing. Rev. C DEC., 23 2 www.ruichips.com
Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU2P5E RU2P5E SOT89 Tape&Reel 7 2mm Rev. C DEC., 23 3 www.ruichips.com
Typical Characteristics 2 Power Dissipation 6 Drain Current 5 P D - Power (W) 25 5 75 25 5 75 T J - Junction Temperature ( C) -I D - Drain Current (A) 4 3 2 VGS=-4.5V 25 5 75 25 5 75 T J - Junction Temperature ( C) -I D - Drain Current (A).. R DS(ON) limited T A =25 C Safe Operation Area DC.. µs µs ms ms -V DS - Drain-Source Voltage (V) R DS(ON) - On - Resistance (mω) 3 25 2 5 5 Drain Current Ids=-5A 2 3 4 5 6 7 8 9 -V GS - Gate-Source Voltage (V) Thermal Transient Impedance ZthJA - Thermal Response ( C/W) Duty=.5,.2,.,.5,.2,., Single Pulse Single Pulse. R θja = C/W. E-5.... Square Wave Pulse Duration (sec) Rev. C DEC., 23 4 www.ruichips.com
Typical Characteristics 2 Output Characteristics 2 Drain-Source On Resistance -I D - Drain Current (A) 9 6 3-4.5V -3V -2.5V -V 2 3 4 5 -V DS - Drain-Source Voltage (V) R DS(ON) - On Resistance (mω) 5 5-2.5V -4.5V 2 4 6 8 -I D - Drain Current (A) Normalized On Resistance 2.5 2..5..5. V GS =-4.5V I DS =-5A Drain-Source On Resistance -5-25 25 5 75 25 5 T J - Junction Temperature ( C) -I S - Source Current (A). T J =25 C Rds(on)=5mΩ. Source-Drain Diode Forward T J =5 C T J =25 C.2.4.6.8.2.4 -V SD - Source-Drain Voltage (V) C - Capacitance (pf) 8 6 4 2 Capacitance Frequency=.MHz Ciss Coss Crss -V DS - Drain-Source Voltage (V) -V GS - Gate-Source Voltage (V) 9 8 7 6 5 4 3 2 VDS=-6V IDS=-5A Gate Charge 2 4 6 8 Q G - Gate Charge (nc) Rev. C DEC., 23 5 www.ruichips.com
Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Rev. C DEC., 23 6 www.ruichips.com
Package Information SOT89 C A C B B2 B3 B θ θ A3 A4 A2 A5 A θ2 θ3 SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 4.4 4.5 4.6.73.77.8 A.65.7.75.65.67.69 A2 2.95 3. 3.5.6.8.2 A3.32.42.52.3.7.2 A4.38.48.58.5.9.23 A5.32.42.52.3.7.2 B 2.3 2.45 2.6.9.96.2 B 4.5 4.5 4.25.59.63.67 B2.8..2.3.39.47 B3.8..2.3.39.47 C.4.5.6.55.59.63 C.35.4.45.4.6.8 θ TYP4 TYP4 θ 5 TYP4 5 TYP4 θ2 TYP4 TYP4 θ3 5 TYP4 5 TYP4 Rev. C DEC., 23 7 www.ruichips.com
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