N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS Compliant) Top View SOT-223 D pplications Power Management in DC/DC Converter. G S N-Channel MOSFET Ordering and Marking Information SM2NS SM2NS V: 2N XXXXX ssembly Material Handling Code Temperature Range Package Code Package Code V : SOT-223 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel (25ea/reel) ssembly Material G : Halogen and Lead Free Device XXXXX - Lot Code Note: SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
bsolute Maximum Ratings (T = 25 C Unless Otherwise Noted) Symbol Parameter Rating Unit Common Ratings (T =25 C Unless Otherwise Noted) V DSS Drain-Source Voltage V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 5 T STG Storage Temperature Range -55 to 5 C I S Diode Continuous Forward Current T =25 C 4 I D a I DM P D c R θj b I S b E S Continuous Drain Current T =25 C 8 T =7 C 6.4 Pulsed Drain Current T =25 C 32 Maximum Power Dissipation T =25 C 3.5 T =7 C 2.2 W Thermal Resistance-Junction to mbient t s 35 C/W Steady State 7 C/W valanche Current, Single pulse (L=.5mH) 8 valanche Energy, Single pulse (L=.5mH) 8 mj Note a: Pulse width is limited by maximum junction temperature. b: UIS tested and pulse width are limited by maximum junction temperature 5oC (initial temperature T j =25 C) c: Surface Mounted on in 2 pad area, Electrical Characteristics (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25µ - - V I DSS V DS =8V, V GS =V - - Zero Gate Voltage Drain Current µ T J =85 C - - 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25µ 2 3 V I GSS Gate Leakage Current V GS =±2V, V DS =V - - ± n R DS(ON) d Drain-Source On-state Resistance V GS =V, I DS =8-24 29 mω V GS =4.5V, I DS =6-25 33 mω 2
Electrical Characteristics (Cont.) (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Characteristics V SD c Diode Forward Voltage I SD =5, V GS =V -.8.3 V t rr Reverse Recovery Time - 4 - ns I SD =5, dl SD /dt=/µs Reverse Recovery Charge - 7 - nc Q rr Dynamic Characteristics d R G Gate Resistance V GS =V,V DS =V,f=MHz -. - Ω C iss Input Capacitance V GS =V, - 24 32 C oss Output Capacitance V DS =3V, - 5 - Reverse Transfer Capacitance Frequency=.MHz - 85 - C rss t d(on) Turn-on Delay Time - 8 33 t r Turn-on Rise Time V DD =3V, R L =3Ω, - 9 7 I DS =, V GEN =V, t d(off) Turn-off Delay Time R - 56 G =6Ω Turn-off Fall Time - 4 26 t f Gate Charge Characteristics d Q g Total Gate Charge V DS =3V, V GS =4.5V, I DS =8-23 - Q g Total Gate Charge - 5 65 Q gs Gate-Source Charge V DS =3V, V GS =V, I DS =8-9 - Gate-Drain Charge - 9 - Q gd Note d: Pulse test; pulse width 3 µs, duty cycle 2%. e: Guaranteed by design, not subject to production testing. pf ns nc 3
Typical Operating Characteristics Power Dissipation Drain Current 4. 9 3.5 8 3. 7 Ptot - Power (W) 2.5 2..5. ID - Drain Current () 6 5 4 3 2.5 T =25 o C. 2 4 6 8 2 4 6 T =25 o C,V G =V 2 4 6 8 2 4 6 Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance ID - Drain Current (). Rds(on) Limit 3µs ms ms ms s DC T =25 o C... 8 VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance 3....2.5 Single Pulse..2 Duty =.5 Mounted on in 2 pad R θj : 35 o C/W E-3 E-4 E-3.. 6 Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) 35 Output Characteristics V GS =3.5,4,5,6,7,8,9,V 32 Drain-Source On Resistance 3 3 ID - Drain Current () 25 2 5 5 3V RDS(ON) - On - Resistance (mω) 28 26 24 22 2 V GS =4.5V V GS =V 2.5V..5..5 2. 2.5 3. VDS - Drain - Source Voltage (V) 8 5 5 2 25 3 ID - Drain Current () Gate-Source On Resistance Gate Threshold Voltage 5 I DS =8.6 I DS =25µ RDS(ON) - On - Resistance (mω) 45 4 35 3 25 2 Normalized Threshold Voltage.4.2..8.6.4 5 2 3 4 5 6 7 8 9 VGS - Gate - Source Voltage (V).2-5 -25 25 5 75 25 5 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.2 2. V GS = V I DS = 8 3 Normalized On Resistance.8.6.4.2..8.6 IS - Source Current () T j =5 o C T j =25 o C.4 R ON @T j =25 o C: 24mΩ.2-5 -25 25 5 75 25 5 Tj - Junction Temperature ( C)...2.4.6.8..2.4 VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 4 35 3 25 Frequency=MHz Ciss 2 5 5 Coss Crss 8 6 24 32 4 VGS - Gate - source Voltage (V) 9 8 7 6 5 4 3 2 V DS = 3V I DS = 8 2 3 4 5 VDS - Drain - Source Voltage (V) QG - Gate Charge (nc) 6
valanche Test Circuit and Waveforms DUT VDS L tp VDSX(SUS) VDS RG VDD IS tp IL.Ω ES VDD tv Switching Time Test Circuit and Waveforms VDS RD VGS DUT VDS 9% RG VDD tp % VGS td(on) tr td(off) tf 7
Package Information SOT-223 D b2 SEE VIEW 2 E E e c e b L.25 GUGE PLNE SETING PLNE VIEW S SOT-223 Y M B MILLIMETERS INCHES O L MIN. MX. MIN..2.8. 2.5.7 b b2 c D E E e.66.84 2.9 3..23.33 6.3 6.7 6.7 2.3 BSC 7.3 3.3 3.7..9 BSC MX..7.59.67.26.33.4.22.9.3.248.264.264.3.46 e 4.6 BSC.8 BSC L.75.3.4.287 Note :. Follow from JEDEC TO-26. 2. Dimension D and E are determined at the outermost extremes of the plastic exclusive of mold flash, tie bar burrs, gate burrs, and interlead flash, but including any mismatch between the top and bottom of the plastic body. RECOMMENDED LND PTTERN 3. 5.98.8 2.3.2.2 UNIT: mm 8
Carrier Tape & Reel Dimensions OD P P2 P d H W F E OD B T B K B SECTION - SECTION B-B T pplication H T C d D W E F SOT-223 32.±2. 5 MIN. 2.4+2. -. 3.+.5 -.2.5 MIN. 2.2 MIN. 2.±.3.75±. 5.5±.5 P P P2 D D T B K 4.±. 8.±. 2.±.5.5+. -..5 MIN..6+. -.4 6.9±.2 7.5±.2 2.±.2 (mm) 9
Taping Direction Information SOT-223 USER DIRECTION OF FEED Classification Profile
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds verage ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 83 C 6-5 seconds 27 C 6-5 seconds See Classification Temp in table See Classification Temp in table 2 2** seconds 3** seconds verage ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, 8 Hrs, 8% of VDS max @ Tjmax HTGB JESD-22, 8 Hrs, % of VGS max @ Tjmax PCT JESD-22, 2 68 Hrs, %RH, 2atm, 2 C TCT JESD-22, 4 5 Cycles, -65 C~5 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-563588 Fax: 886-3-56425