HEXFET Power MOSFET P - 9576 IRF730PbF Generation V Technoogy Utra Low On-Resistance ua N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve the owest possibe on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient device for use in a wide variety of appications. The SO-8 has been modified through a customized eadframe for enhanced therma characteristics and mutipe-die capabiity making it idea in a variety of power appications. With these improvements, mutipe devices can be used in an appication with dramaticay reduced board space. The package is designed for vapor phase, infra red, or wave sodering techniques. Power dissipation of greater than 0.8W is possibe in a typica PCB mount appication. S G S2 G2 2 3 Top View 8 7 6 4 5 2 2 V SS = 20V R S(on) = 0.050Ω SO-8 bsoute Maximum Ratings Parameter Max. Units I @ T = 25 C Sec. Pused rain Current, V GS @ 4.5V 5.7 I @ T = 25 C Continuous rain Current, V GS @ 4.5V 5.2 I @ T = 70 C Continuous rain Current, V GS @ 4.5V 4. I M Pused rain Current 2 P @T = 25 C Power issipation 2.0 W Linear erating Factor 0.06 W/ C V GS Gate-to-Source Votage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to 50 C Therma Resistance Ratings Parameter Typ. Max. Units R θj Maximum Junction-to-mbient 62.5 C/W /6/04
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Votage Temp. Coefficient 0.044 V/ C Reference to 25 C, I = m R S(ON) Static rain-to-source On-Resistance 0.050 V GS = 4.5V, I = 2.6 ƒ Ω 0.070 V GS = 2.7V, I = 2.2 ƒ V GS(th) Gate Threshod Votage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance 8.3 S V S = 5V, I = 2.6 I SS rain-to-source Leakage Current.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C Gate-to-Source Forward Leakage 0 V GS = 2V I GSS n Gate-to-Source Reverse Leakage -0 V GS = - 2V Q g Tota Gate Charge 20 I = 2.6 Q gs Gate-to-Source Charge 2.2 nc V S = 6V Q gd Gate-to-rain ("Mier") Charge 8.0 V GS = 4.5V, See Fig. 6 and 2 ƒ t d(on) Turn-On eay Time 9.0 V = V t r Rise Time 42 I = 2.6 ns t d(off) Turn-Off eay Time 32 R G = 6.0Ω t f Fa Time 5 R = 3.8Ω, See Fig. ƒ L Interna rain Inductance 4.0 L S Interna Source Inductance 6.0 Between ead tip and center of die contact C iss Input Capacitance 660 V GS = 0V C oss Output Capacitance 280 pf V S = 5V C rss Reverse Transfer Capacitance 40 ƒ =.0MHz, See Fig. 5 nh G S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 2.5 (Body iode) showing the I SM Pused Source Current integra reverse G 2 (Body iode) p-n junction diode. S V S iode Forward Votage.0 V T J = 25 C, I S =.8, V GS = 0V ƒ t rr Reverse Recovery Time 29 44 ns T J = 25 C, I F = 2.6 Q rr Reverse RecoveryCharge 22 33 nc di/dt = 0/µs ƒ t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) ƒ Puse width 300µs; duty cyce 2%. I S 2.6, di/dt 0/µs, V V (BR)SS, T J 50 C Surface mounted on FR-4 board, t sec.
I, rain-to-source Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V 20µs PULSE WITH 20µs PULSE WITH.5V T J = 25 C T J = 50 C 0. 0 0. 0 V S, rain-to-source Votage (V) I, rain-to-source Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source Current () 0 T J = 25 C T J = 50 C V S = 5V 20µs PULSE WITH.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.0.5.0 0.5 I = 4.3 V GS = 4.5V 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature
C, Capacitance (pf) 200 900 600 300 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = Cgd C oss = C ds Cgd C iss C oss C rss V, Gate-to-Source Votage (V) GS 8 6 4 2 I = 2.6 V S = 6V 0 0 V S, rain-to-source Votage (V) 0 FOR TEST CIRCUIT SEE FIGURE 2 0 5 5 20 25 Q, Tota Gate Charge (nc) G Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current () 0 T J = 50 C T J = 25 C T = 25 C ms TJ = 50 C V = 0V Singe Puse 0. GS 0.0 0.5.0.5 2.0 2.5 0. 0 V S, Source-to-rain Votage (V) I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) 0us ms V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating rea
V S R 6.0 5.0 R G V GS.U.T. - V I, rain Current () 4.0 3.0 2.0.0 Fig a. Switching Time Test Circuit V S 90% 4.5V Puse Width µs uty Factor 0. % 0.0 25 50 75 0 25 50 T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig 9. Maximum rain Current Vs. mbient Temperature Fig b. Switching Time Waveforms 0 Therma Response (Z thj ) = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj T 0. 0.000 0.00 0.0 0. 0 t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient
Current Reguator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF 4.5V Q GS Q G.U.T. V - S V GS V G 3m Charge Fig 2a. Basic Gate Charge Waveform I G I Current Samping Resistors Fig 2b. Gate Charge Test Circuit
Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - ** V GS * R G dv/dt controed by R G I S controed by uty Factor "".U.T. - evice Under Test - * V * Reverse Poarity for P-Channe ** Use P-Channe river for P-Channe Measurements river Gate rive Period P.W. = P.W. Period [ V GS =V ] ***.U.T. I S Waveform Reverse Recovery Current Re-ppied Votage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Rippe 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Leve and 3V rive evices Fig 3. For N-Channe HEXFETS
SO-8 Package Outine imensions are shown in miimeters (inches) E 6 6X 5 8 7 6 5 2 3 4 e B H 0.25 [.0] INCHES IM MIN MX.0532.0040.0688.0098 b.03.020 MILLIMETERS MIN MX.35.75 0. 0.25 0.33 0.5 c.0075.0098 0.9 0.25 E.89.497.968.574 4.80 3.80 5.00 4.00 e.050 BSIC.27 BSIC e.025 BSIC 0.635 BSIC H.2284.2440 5.80 6.20 K.0099.096 0.25 0.50 L.06.050 0.40.27 y 0 8 0 8 e C y K x 45 8X b 0.25 [.0] C B 0. [.004] 8X L 7 8X c NOT ES:. IMENSIONING & TOLERNCING PER SME Y4.5M-994. 2. CONTROLLING IMENS ION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS -02. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBS TRTE. 6.46 [.255] 3X.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking Information (Lead-Free) EXMPLE: THIS IS N IRF7 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F7 TE COE (YWW) P = ES IGNTES LE-FREE PROUCT (OPTIONL) Y = LST IGIT OF T HE YER WW = WEE K = S S EMB LY S ITE COE LOT COE PRT NUMBER
SO-8 Tape and Ree imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI-54. 330.00 (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. 4.40 (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and quaified for the Consumer market. Quaifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) 252-75 TC Fax: (3) 252-7903 Visit us at www.irf.com for saes contact information./04