N-Channel MOSFET IRF7413 (KRF7413) Top View. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage

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SM Type IRF743 (KRF743) SOP- Features VS (V) = 3V I = A (VGS = V) RS(ON) < mω (VGS = V).5.5 S S S G 7 3 4 5. +.4 -. Source Source 3 Source 4 Gate 5 rain rain 7 rain rain Top View Absolute Maximum Ratings Ta = 5 Parameter Symbol Rating Unit rain-source Voltage Gate-Source Voltage Continuous rain Current Pulsed rain Current * VS 3 VGS ± TA=5 TA=7 9. IM 9 Power issipation * TA=5 P.5 W Linear erating Factor. W/ Single Pulse Avalanche Energy *3 EAS mj Avalanche Current * IAR 7. A Peak iode Recovery dv/dt *4 dv/dt V/ns Thermal Resistance.Junction- to-ambient * Thermal Resistance.Junction- to-lead I RthJA 5 RthJL Junction Temperature TJ 5 Storage Temperature Range Tstg -55 to 5 *:Repetitive rating; pulse width limited by max. junction temperature. *: When mounted on inch square copper board *3: Starting TJ = 5 C, L = 4.4mH RG = 5Ω, IAS = 7.A. *4: IS 7.A, di/dt A/μs, V V(BR)SS, TJ 5 C V A /W

SM Type IRF743 (KRF743) Electrical Characteristics Ta = 5 Parameter Symbol Test Conditions Min Typ Max Unit rain-source Breakdown Voltage VSS I=5μA, VGS=V 3 V Zero Gate Voltage rain Current ISS VS=4V, VGS=V VS=4V, VGS=V, TJ=5 5 μa Gate-Body Leakage Current IGSS VS=V, VGS=±V ± na Gate Threshold Voltage VGS(th) VS=VGS, I=5μA 3 V Static rain-source On-Resistance RS(On) VGS=V, I=7.A * mω VGS=4.5V, I=A Forward Transconductance gfs VS=V, I=7.A S Input Capacitance Ciss 7 Output Capacitance Coss VGS=V, VS=5V, f=mhz 7 Reverse Transfer Capacitance Crss Output Capacitance Coss VGS=V, VS=V, f=mhz 9 VGS=V, VS=4V, f=mhz Effective Output Capacitance Coss eff VGS=V, VS= to 4V Total Gate Charge Qg 44 Gate Source Charge Qgs VGS=V, VS=4V, I=7.A 7.9 nc Gate rain Charge Qgd 9. Turn-On elaytime td(on). Turn-On Rise Time tr VGS=V, VS= V, I=7.A, Turn-Off elaytime td(off) RG=.Ω * 35 ns Turn-Off Fall Time tf 4 Body iode Reverse Recovery Time trr 5 75 IF= 7.A, di/dt= A/μs, TJ = 5 * Body iode Reverse Recovery Charge Qrr 74 nc Maximum Body-iode Continuous Current IS 3. * Pulsed Source Current ISM 9 A iode Forward Voltage VS IS=7.A,VGS=V,TJ = 5 * V *: Pulse width 3μs; duty cycle %. *: symbol showing the integral reverse p-n junction diode. pf

I, rain-to-source Current A) I, rain-to-source Current (A) I, rain-to-source Current (A) SM Type IRF743 (KRF743) VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.V.7V BOTTOM.5V VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.V.7V BOTTOM.5V.5V...5V µs PULSE WITH Tj = 5 C. V S, rain-to-source Voltage (V). µs PULSE WITH Tj = 5 C. V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig. Typical Output Characteristics. T J = 5 C T J = 5 C V S = 5V µs PULSE WITH. 3. 4. 5.. V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) I = A.5..5 V GS = V. - -4-4 4 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

C, Capacitance (pf) I S, Reverse rain Current (A) I, rain-to-source Current (A) V GS, Gate-to-Source Voltage (V) SM Type IRF743 (KRF743) V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd I = 7.A V S = 4V VS= 5V VS=.V Ciss Coss Crss 4 V S, rain-to-source Voltage (V) 3 4 5 Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig. Typical Gate Charge Vs. Gate-to-Source Voltage. T J = 5 C OPERATION IN THIS AREA LIMITE BY R S (on)... T J = 5 C V GS = V..4.... V S, Source-torain Voltage (V) Tc = 5 C Tj = 5 C Single Pulse µsec msec msec V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig. Maximum Safe Operating Area 4

SM Type IRF743 (KRF743) I, rain Current (A) 4 Fig a. Switching Time Test Circuit + - V S 5 5 75 5 5 T C, Case Temperature ( C) 9% Fig 9. Maximum rain Current Vs. Ambient Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thja ) =.5...5.. Notes: SINGLE PULSE. uty factor = t / t (THERMAL RESPONSE). Peak T J= P M x Z thja + TA...... t, Rectangular Pulse uration (sec) PM t t Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

R S (on), rain-to-source On Resistance ( ) SM Type IRF743 (KRF743).4...5... V GS = 4.5V V GS = V R S(on), rain-to -Source On Resistance ( ).4.3.. I = 7.A.4 4 I, rain Current (A). 3. 3.3 3.4 3.5 3. 3.7 V GS, Gate -to -Source Voltage (V) Fig. On-Resistance Vs. rain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. V I AS V GS. F 5K 3mA.3 F I G.U.T. I Current Sampling Resistors + V - S Fig 4a&b. Basic Gate Charge Test Circuit and Waveform tp V(BR)SS R G V S V V G tp Q GS.U.T I AS L. Q G Q G Charge 5V RIVER + - V A E AS, Single Pulse Avalanche Energy (mj) 3 5 5 5 TOP BOTTOM I 3.A 4.A 7.A 5 5 75 5 5 Starting T, Junction Temperature ( J C) Fig 5a&b. Unclamped Inductive Test circuit and Waveforms Fig 5c. Maximum Avalanche Energy Vs. rain Current