RU3P4B P-Channel Advanced Power MOSFET Features -25V/-4A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =6mΩ(Typ.)@V GS =-4.5V R DS (ON) =8mΩ(Typ.)@V GS =-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin Description D G S Applications Load Switch G SOT23 D Absolute Maximum Ratings S P-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (T A =25 C Unless Otherwise Noted) V DSS Drain-Source Voltage -25 V GSS Gate-Source Voltage ±6 V T J Maximum Junction Temperature 5 C T STG Storage Temperature Range -55 to 5 C I S Diode Continuous Forward Current T A =25 C -.25 A Mounted on Large Heat Sink I DP 3μs Pulse Drain Current Tested T A =25 C -6 A 2 I D Continuous Drain Current(V GS =-V) T A =25 C -4 T A =7 C -3.2 A P D Maximum Power Dissipation T A =25 C T A =7 C.64 W R θjc Thermal Resistance-Junction to Case - C/W 3 R θja Thermal Resistance-Junction to Ambient 25 C/W Drain-Source Avalanche Ratings E AS 4 Avalanche Energy, Single Pulsed - mj Rev. A MAR., 23 www.ruichips.com
RU3P4B Electrical Characteristics (T A =25 C Unless Otherwise Noted) RU3P4B Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-25µA -25-3 V I DSS V DS =-25V, V GS =V - Zero Gate Voltage Drain Current µa T J =25 C -3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-25µA -.5 -.9 -.3 V I GSS Gate Leakage Current V GS =±6V, V DS =V ± na V GS =-V, I DS =-4A 5 55 mω R 5 DS(ON) Drain-Source On-state Resistance V GS =-4.5V, I DS =-3.2A 6 7 mω V GS =-2.5V, I DS =-2.4A 8 95 mω Diode Characteristics 5 V SD Diode Forward Voltage I SD =-A, V GS =V -.2 V trr Reverse Recovery Time ISD=-4A, dlsd/dt=a/µs 8 ns Qrr Reverse Recovery Charge 3 nc Dynamic Characteristics 6 R G Gate Resistance V GS =V,V DS =V,F=MHz.6 Ω C iss Input Capacitance V GS =V, 55 C oss Output Capacitance V DS =-5V, Frequency=.MHz 95 pf C rss Reverse Transfer Capacitance 5 t d(on) Turn-on Delay Time 6 t r Turn-on Rise Time V DD =-5V, I DS =-4A, t d(off) Turn-off Delay Time V GEN =-V,R G =6Ω 23 ns t f Turn-off Fall Time Gate Charge Characteristics 6 Q g Total Gate Charge 3 Q gs Gate-Source Charge V DS =-24V, V GS =-V, I DS =-4A.4 Q gd Gate-Drain Charge 2.7 nc Notes: Pulse width limited by safe operating area. 2Calculated continuous current based on maximum allowable junction temperature. 3When mounted on inch square copper board, t sec. The value in any given application depends on the user's specific board design. 4Limited by T Jmax. Starting T J = 25 C. 5Pulse test;pulse width 3µs, duty cycle 2%. 6Guaranteed by design, not subject to production testing. Rev. A MAR., 23 2 www.ruichips.com
RU3P4B Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU3P4B CXYWW SOT23 Tape&Reel 3 7 8mm The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week Rev. A MAR., 23 3 www.ruichips.com
RU3P4B Typical Characteristics 2 Power Dissipation 5 Drain Current P D - Power (W) 25 5 75 25 5 75 T J - Junction Temperature ( C) -I D - Drain Current (A) 4 3 2 VGS=-V 25 5 75 25 5 75 T J - Junction Temperature ( C) -I D - Drain Current (A).. R DS(ON) limited T A =25 C Safe Operation Area DC.. µs µs ms ms -V DS - Drain-Source Voltage (V) R DS(ON) - On - Resistance (mω) 3 25 2 5 5 Drain Current Ids=-4A 2 3 4 5 6 7 8 9 -V GS - Gate-Source Voltage (V) Thermal Transient Impedance ZthJA - Thermal Response ( C/W) Duty=.5,.2,.,.5,.2,., Single Pulse Single Pulse. R θja =25 C/W. E-5.... Square Wave Pulse Duration (sec) Rev. A MAR., 23 4 www.ruichips.com
RU3P4B Typical Characteristics -I D - Drain Current (A) 2 5 5 Output Characteristics -6V -V -4.5V -2.5V -2V -V 2 3 4 5 -V DS - Drain-Source Voltage (V) R DS(ON) - On Resistance (mω) 3 25 2 5 5 Drain-Source On Resistance -2.5V -4.5V -V 2 4 6 8 -I D - Drain Current (A) Normalized On Resistance 2.5 2..5..5. V GS =-V I D =-4A Drain-Source On Resistance -5-25 25 5 75 25 5 T J - Junction Temperature ( C) -I S - Source Current (A). T J =25 C Rds(on)=5mΩ. Source-Drain Diode Forward T J =5 C T J =25 C.2.4.6.8.2.4 -V SD - Source-Drain Voltage (V) C - Capacitance (pf) 8 6 4 2 Capacitance Frequency=.MHz Ciss Coss Crss -V DS - Drain-Source Voltage (V) -V GS - Gate-Source Voltage (V) 9 8 7 6 5 4 3 2 VDS=-24V IDS=-4A Gate Charge 5 5 Q G - Gate Charge (nc) Rev. A MAR., 23 5 www.ruichips.com
RU3P4B Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Rev. A MAR., 23 6 www.ruichips.com
RU3P4B Package Information D b SOT23 θ.25 E E e e A2 A A L L C SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A.9.25.5.35.4.45 A.5.75..2.3.4 A2.9.975.2.35.38.4 b.3.4.5.2.6.2 c.8.5.5.3.5.6 D 2.8 2.9 3...4.8 E.2.3.4.47.5.55 E 2.25 2.4 2.55.89.94. e.95 TYP.37 TYP e.8.9 2..7.75.79 L.54 REF.2 REF L.4.5.6.6.8.2 θ * 8 * 8 Rev. A MAR., 23 7 www.ruichips.com
RU3P4B Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 5, the 5floor An Tong Industrial Building, NO.27 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 83-5334 FAX: (86-755) 83-4278 E-mail: Sales-SZ@ruichips.com Rev. A MAR., 23 8 www.ruichips.com