Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (<.mm) Available in Tape & Reel Description New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<.mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. S G S2 G2 IRF7555 HEXFET Power MOSFET 2 4 8 7 6 5 D D D2 D2 Top View Micro8 PD -9865B V DSS = -20V R DS(on) = 0.055Ω Absolute Maximum Ratings Parameter Max. Units V DS Drain-Source Voltage -20 V I D @ T A = 25 C Continuous Drain Current, V GS @ -4.5V -4. I D @ T A = 70 C Continuous Drain Current, V GS @ -4.5V -.4 A I DM Pulsed Drain Current -4 P D @T A = 25 C Maximum Power Dissipation.25 W P D @T A = 70 C Maximum Power Dissipation 0.8 W Linear Derating Factor 0 mw/ C V GS Gate-to-Source Voltage ± 2 V E AS Single Pulse Avalanche Energy 6 mj dv/dt Peak Diode Recovery dv/dt. V/ns T J, T STG Junction and Storage Temperature Range -55 to + 50 C Soldering Temperature, for 0 seconds 240 (.6mm from case) Thermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambient C/W www.irf.com 2/2/00
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -20 V V GS = 0V, I D = -250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient -0.005 V/ C Reference to 25 C, I D = -ma R DS(on) Static Drain-to-Source On-Resistance 0.055 V GS = -4.5V, I D = -4.A ƒ Ω 0.05 V GS = -2.5V, I D = -.4A ƒ V GS(th) Gate Threshold Voltage -0.60 -.2 V V DS = V GS, I D = -250µA g fs Forward Transconductance 2.5 S V DS = -0V, I D = -0.8A I DSS Drain-to-Source Leakage Current -.0 V DS = -6V, V GS = 0V µa -25 V DS = -6V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage - V GS = -2V na Gate-to-Source Reverse Leakage V GS = 2V Q g Total Gate Charge 0 5 I D = -.0A Q gs Gate-to-Source Charge 2.. nc V DS = -0V Q gd Gate-to-Drain ("Miller") Charge 2.5.7 V GS = -5.0V t d(on) Turn-On Delay Time 0 V DD = -0V t r Rise Time 46 I D = -2.0A ns t d(off) Turn-Off Delay Time 60 R G = 6.0Ω t f Fall Time 64 R D = 5.0Ω ƒ C iss Input Capacitance 066 V GS = 0V C oss Output Capacitance 402 pf V DS = -0V C rss Reverse Transfer Capacitance 26 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -. (Body Diode) showing the A I SM Pulsed Source Current integral reverse G -4 (Body Diode) p-n junction diode. V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -.6A, V GS = 0V ƒ t rr Reverse Recovery Time 54 82 ns T J = 25 C, I F = -2.5A Q rr Reverse Recovery Charge 4 6 nc di/dt = -A/µs ƒ D S Notes: Repetitive rating; pulse width limited by max. junction temperature. I SD -2.0A, di/dt -40A/µs, V DD V (BR)DSS, T J 50 C ƒ Pulse width 00µs; duty cycle 2%. Surface mounted on FR-4 board, t 0sec. Starting T J = 25 C, L = 8.0mH R G = 25Ω, I AS = -.0A. 2 www.irf.com
-I D, Drain-to-Source Current (A) 0 VGS TOP -7.50V -5.00V -4.00V -.50V -.00V -2.50V -2.00V BOTTOM -.50V -.50V 20µs PULSE WIDTH T J = 25 C 0. 0. 0 -V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) 0 VGS TOP -7.50V -5.00V -4.00V -.50V -.00V -2.50V -2.00V BOTTOM -.50V -.50V 20µs PULSE WIDTH T J = 50 C 0. 0. 0 -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) 0 T J = 25 C T = 50 J C V DS= -5V 20µs PULSE WIDTH.0 2.0.0 4.0 5.0 -V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = -4.A.5.0 0.5 V GS = -4.5V 0.0-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C) Fig. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com
C, Capacitance (pf) 600 200 800 400 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED -V GS, Gate-to-Source Voltage (V) 5 2 9 6 I D = -4.A -4.5A V DS =-0V 0 0 -V DS, Drain-to-Source Voltage (V) 0 0 4 8 2 6 20 24 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V 0. 0.0 0.4 0.8.2.6 2.0 2.4 -V SD,Source-to-Drain Voltage (V) -I I D, Drain Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS(on) 0us us ms 0ms TC = 25 C TJ = 50 C Single Pulse 0. 0. 0 -V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
-I D, Drain Current (A) 5.0 4.0.0 2.0.0 0.0 25 50 75 25 50 T C, Case Temperature ( C) E AS, Single Pulse Avalanche Energy (mj) 80 60 40 20 I D TOP -.A -2.4A BOTTOM -.0A 0 25 50 75 25 50 Starting T, Junction Temperature ( J C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 0. Maximum Avalanche Energy Vs. Drain Current 0 Thermal Response (Z thja ) 0 D = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thja + TA 0. 0.000 0.00 0.0 0. 0 t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
Package Outline Micro8 Outline Dimensions are shown in millimeters (inches) D - B - LEAD ASSIGNMENTS D D D D D D D2 D2 IN CH ES M ILLIM ETERS DIM M IN M AX M IN M AX A.06.044 0.9. A.004.008 0.0 0.20 E - A - 8 7 6 5 2 4 H 0.25 (.00) M A M 8 7 6 5 8 7 6 5 SINGLE DUAL 2 4 2 4 S S S G S G S2 G2 B.00.04 0.25 0.6 C.005.007 0. 0.8 D.6.20 2.95.05 e.0256 BASIC 0.65 BASIC e.028 BASIC 0. BASIC E.6.20 2.95.05 H.88.98 4.78 5.0 e L.06.026 0.4 0.66 6X e A - C - B 8X A 0.08 (.00) M C A S B S 0.0 (.004) θ L 8X C 8X θ 0 6 0 6.04 (.04 ) 8X RECOMMENDED FOOTPRINT.20 (.26 ) 0.8 (.05 ) 8X 4.24 5.28 (.67 ) (.208 ) NOTES: DIMENSIONING AND TOLERANCING PER ANSI Y4.5M-982. 2 CONTROLLING DIMENSION : INCH. DIMENSIONS DO NOT INCLUDE MOLD FLASH. 0.65 (.0256 ) 6X Part Marking Information Micro8 EXAMPLE : THIS IS AN IRF750 DATE CODE (YW W ) A Y = LAST DIGIT OF YEAR W W = WEEK 45 750 PART NUMBER TOP 6 www.irf.com
Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches) TERMINAL NUMBER 2. (.484 ).7 (.46 ) 8. (.8 ) 7.9 (.2 ) FEED DIRECTION NOTES:. OUTLINE CONFORMS TO EIA-48 & EIA-54. 2. CONTROLLING DIMENSION : MILLIMETER. 0.00 (2.992) MAX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. O UTLINE CONFO RMS TO EIA-48 & EIA-54. 4.40 (.566 ) 2.40 (.488 ) WORLD HEADQUARTERS: 2 Kansas St., El Segundo, California 90245, Tel: (0) 252 705 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 88 72020 IR CANADA: 5 Lincoln Court, Brampton, Ontario L6TZ2, Tel: (905) 45 2200 IR GERMANY: Saalburgstrasse 57, 650 Bad Homburg Tel: ++ 49 672 96590 IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: ++ 9 45 0 IR JAPAN: K&H Bldg., 2F, 0-4 Nishi-Ikebukuro -Chome, Toshima-Ku, Tokyo Japan 7 Tel: 8 98 0086 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, -, Singapore 27994 Tel: ++ 65 88 460 IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 067, Taiwan Tel: 886-2-277-996 Data and specifications subject to change without notice. 2/2000 www.irf.com 7