Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

Similar documents
Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 175 C T J op. Operating Temperature C T stg

Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

Symbol Parameters Test Conditions Min Typ Max Unit T J max) Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

1200V 50A IGBT Module

MG06400D-BN4MM Series 400A Dual IGBT

Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 175 C T J op. Operating Temperature C T stg

1200 V 600 A IGBT Module

MG12300D-BN2MM Series 300A Dual IGBT

Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 175 C T J op. Operating Temperature C T stg

Symbol Parameters Test Conditions Min Typ Max Unit T J max) Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant

Symbol Parameter/Test Conditions Values Unit T C = T C =95 450

Symbol Parameter/Test Conditions Values. 200 P tot Power Dissipation Per IGBT T C =25, T Jmax = Symbol Parameter/Test Conditions Values

T C =25 75 T C = Symbol Parameter/Test Conditions Values Unit

Symbol Parameter/Test Conditions Values. T C =25, T Jmax = T C =95, T Jmax =

MMG50S120B6UC. 1200V 50A IGBT Module. Preliminary PRODUCT FEATURES APPLICATIONS

I CM Repetitive Peak Collector Current tp=1ms. 150 P tot T J = I 2 t. A 2 J =125, t=10ms, V R =0V

V CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875

SUSPM TM SEPT LUH75G1201_Preliminary LUH75G1201Z*_Preliminary. SUSPM1 94 X 34 X 30mm. 1200V 75A 2-Pack IGBT Module. Features.

Symbol Description GD200CLT120C2S Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20V V

Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A

Molding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A

Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20

IGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/225A 6 in one-package. General Description. Features. Typical Applications

IGBT XPT Module H Bridge

Molding Type Module IGBT, 1-in-1 Package, 1200 V and 300 A

IGBT STARPOWER GD400SGK120C2S. Absolute Maximum Ratings T C =25 unless otherwise noted SEMICONDUCTOR TM. Molding Type Module

SUSPM TM DEC LVH200G1201_Preliminary LVH200G1201Z*_Preliminary. SUSPM X 48.5 X 30 mm. 1200V 200A 2-Pack IGBT Module. Features.

Features. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module

EMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A

S R V U T DETAIL "A" AF AE E1C2 (33) E1C2 (32) Dimensions Inches Millimeters

Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A

Item Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20

EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A

EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 75 A

IGBT Module H Bridge MIEB 101H1200EH. = 1200 V = 183 A V CE(sat) = 1.8 V V CES I C25. Part name (Marking on product) MIEB101H1200EH

IGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/10A PIM in one-package. General Description. Features. Typical Applications

TO-247AC Absolute Maximum Ratings

10-PZ126PA080ME-M909F18Y. Maximum Ratings

TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

IKW40T120. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

IGBT STARPOWER GD75HFU120C1S SEMICONDUCTOR TM. Molding Type Module. 1200V/75A 2 in one-package. General Description. Features. Typical Applications

n-channel TO-220AB 1

IGBT ECONO3 Module, 150 A

Features. n-channel TO-247AC. 1

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA R θ JC

Half Bridge IGBT Power Module, 600 V, 100 A

IGBT ECONO3 Module, 100 A

IHW15T120. Soft Switching Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V TO-220F C. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.

TrenchStop Series. Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

V CE I C (T C =100 C) V CE(sat) (T J =25 C) Symbol V GE I C I CM I LM 6.6 I F 2.6 I FM. t SC P D T J, T STG T L. R θ JA R θ JC

IGBT Module Sixpack MWI 25-12A7(T) I C25 = 50 A V CES = 1200 V V CE(sat) typ. = 2.2 V. Short Circuit SOA Capability Square RBSOA

ACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC

Dual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 300 A

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM. I F to 150 I FM P D T J, T STG T L

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM I F I FM P D T L. R θ JA R θ JC

n-channel Features 1 TO-247AD Pulse Collector CurrentÃc 82 I LM

Features. n-channel TO-220AB. 1

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.94V. Symbol V GE I C I CM I LM I F 30 I FM. t SC P D T L. R θ JA R θ JC

Insulated Gate Bipolar Transistor (Trench IGBT), 80 A

T C = 25 C 400 T C = 80 C 300 A

n-channel D 2 Pak 1

V23990-P589-A41-PM target datasheet. Maximum Ratings. Types. Tj=25 C, unless otherwise specified. Input Rectifier Diode. Inverter Transistor

MTP IGBT Power Module Primary Dual Forward

MPMB75B120RH NPT & Rugged Type 1200V IGBT Module. Features. Applications. devices are. total losses. Equivalent Circuit 7DM-1 E301932

GA200TD120U PD D. Ultra-Fast TM Speed IGBT "HALF-BRIDGE" IGBT DUAL INT-A-PAK. Features V CES = 1200V. V CE(on) typ. = 2.3V.

MIDA-HB12FA-600N IGBT module datasheet

MPMD200B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS

5SND 0500N HiPak IGBT Module

Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A

IRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

STGW25H120DF2, STGWA25H120DF2

AOT15B65M1/AOB15B65M1

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC

Applications: AC motor drives Solar inverter Air-conditioning systems high power converters UPS

Features. n-channel TO-247AC. 1

Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 300 A

STGW40S120DF3, STGWA40S120DF3

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.7V TO-220F C G E. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.

Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 400 A

Insulated Gate Bipolar Transistor (Trench IGBT), 180 A

Full Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A

Primary MTP IGBT Power Module

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V TO-263 D 2 PAK C E E G E AOB5B65M1. Symbol V GE I C I CM I LM I F I FM. t SC P D T L.

IGBT Module Sixpack MWI 15-12A7. I C25 = 30 A V CES = 1200 V V CE(sat) typ. = 2.0 V. Short Circuit SOA Capability Square RBSOA

V CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC

V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.

Industry standard 62mm IGBT module. IGBT chip. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C

V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol V GE. ±20 V 500ns 24 V V SPIKE I C I CM I LM I F 10 I FM. t SC P D T J, T STG T L

CM1800HCB-34N. <High Voltage Insulated Gate Bipolar Transistor:HVIGBT >

Data Sheet GHIS040A060S A2

Transcription:

12V 3A Module RoHS Features 3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense included Applications AC motor control Motion/servo control Photovoltaic/Fuel cell Inverter and power supplies Module Characteristics ( max Max. Junction Temperature 15 C op Operating Temperature -4 125 C T stg Storage Temperature -4 125 C V isol Insulation Test Voltage AC, t=1min 3 V CTI Comparative Tracking Index 21 Torque Module-to-Sink Recommended (M5) 2.5 5 N m Torque Module Electrodes Recommended (M6) 3 5 N m Weight 35 g Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit S Collector - Emitter Voltage =25 C 12 V V GES Gate - Emitter Voltage ±2 V I C T DC Collector Current C =25 C 5 A =8 C 3 A I CM Repetitive Peak Collector Current t p =1ms 6 A P tot Power Dissipation Per 14 W V RRM Repetitive Reverse Voltage =25 C 12 V I F(AV) =25 C 3 A Average Forward Current =8 C 18 A I FRM Repetitive Peak Forward Current t p =1ms 6 A I 2 t =125 C, t=1ms, V R =V 175 A 2 s 146 1 216 Littelfuse, Inc Revised:1/5/16

12V 3A Module Electrical and Thermal Specifications ( V GE(th) Gate - Emitter Threshold Voltage =V GE, I C =12mA 5. 5.8 6.5 V (sat) Collector - Emitter I C =3A, V GE =15V, =25 C 1.7 V Saturation Voltage I C =3A, V GE =15V, =125 C 2. V I ICES Collector Leakage Current =12V, V GE =V, =25 C 1 ma =12V, V GE =V, =125 C 5 ma I GES Gate Leakage Current =V, V GE =±15V, =125 C -4 4 na R Gint Integrated Gate Resistor 2.5 Ω Q ge Gate Charge =6V, I C =3A, V GE =±15V 2.7 μc C ies Input Capacitance 21 nf =25V, V GE =V, f =1MHz C res Reverse Transfer Capacitance 1. nf t d(on) t r t d(off) t f Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time Turn - on Energy Turn - off Energy V CC =6V I C =3A R G =2.4Ω V GE =±15V Inductive Load =25 C 16 ns =125 C 17 ns =25 C 45 ns =125 C 5 ns =25 C 46 ns =125 C 53 ns =25 C 1 ns =125 C 15 ns =25 C 13 mj =125 C 2 mj =25 C 25 mj =125 C 37 mj I SC Short Circuit Current t psc 1μS, V GE =15V; =125 C, V CC =9V 12 A R thjc Junction-to-Case Thermal Resistance (Per ).9 K/W V F Forward Voltage I F =3A, V GE =V, =25 C 1.65 V I F =3A, V GE =V, =125 C 1.6 V t RR Reverse Recovery Time I F =3A, V R =6V 225 ns I RRM Max. Reverse Recovery Current di F /dt=-48a/µs 255 A E rec Reverse Recovery Energy =125 C 24 mj R thjcd Junction-to-Case Thermal Resistance (Per ).16 K/W NTC Characteristics ( R 25 Resistance T c =25 C 5 KΩ B 25/5 3375 K 147 2 216 Littelfuse, Inc Revised:1/5/16

12V 3A Module Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 6 5 4 3 V GE =15V =25 C 6 5 4 3 V GE =19V V GE =17V V GE =15V V GE =13V V GE =11V V GE = 9V =125 C 2 1 =125 C 2 1.5 1. 1.5 2. 2.5 3. 3.5 V.5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. V Figure 3: Typical Transfer Characteristics Figure 4: Switching Energy vs. Gate Resistor 6 5 4 3 2 =2V =25 C =125 C Eon Eoff (mj) 12 1 8 6 4 =6V I C=3A =125 C 1 2 5 6 7 8 9 1 11 V GE V 12 4 8 12 16 2 24 R G Ω Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area Eon Eoff (mj) 9 8 7 6 5 4 3 2 1 =6V R G=2.4Ω =125 C 7 6 5 4 3 2 1 R G=2.4Ω =125 C 1 2 3 4 I C A 5 6 2 4 6 8 1 12 V 14 3 148 216 Littelfuse, Inc Revised:1/5/16

12V 3A Module Figure 7: Forward Characteristics for Inverter Figure 8: Switching Energy vs. Gate Resistort for Inverter 6 5 32 28 24 I F=3A =6V =125 C IF (A) 4 3 2 =125 C Erec (mj) 2 16 12 8 1 =25 C 4.4.8 1.2 1.6 2. 2.4 V F V 4 8 12 16 2 24 R G Ω Figure 9: Transient Thermal Impedance of and Inverter Figure 1: NTC Characteristics 1 1 ZthJC (K/W).1 1 R.1 1.1.1.1.1 1 1 Rectangular Pulse Duration (seconds) 1 2 4 6 8 1 12 14 16 C Circuit Diagram 149 4 216 Littelfuse, Inc Revised:1/5/16

12V 3A Module Dimensions-Package WB The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q 35g Bulk Pack 6 Part Numbering System Part Marking System MG123 WB - B N2 MM PRODUCT TYPE M: Power Module MODULE TYPE G: VOLTAGE RATING 12: 12V CURRENT RATING 3: 3A ASSEMBLY SITE WAFER TYPE CIRCUIT TYPE 2x(+FWD) PACKAGE TYPE LOT NUMBER Space reserved for QR code 15 5 216 Littelfuse, Inc Revised:1/5/16