RoHS Description This SJxx4x high temperature SCR series is ideal for uni-directional switch applications such as phase control in heating, motor speed controls, converters/rectifiers and capacitive discharge ignitions These SCRs have a low gate current trigger level of 2μA maximum at approximately.5v. Features & Benefits Main Features Symbol Value Unit Voltage capability up to 6V Surge capability up to A at 6Hz half cycle 5 C maximum junction temperature Halogen free and RoHS compliant I T(RMS) 4 A V DRM /V RRM 4 or 6 V I GT.2 ma Schematic Symbol Applications Typical applications includes capacitive discharge system for motorcycle engine CDI, portable generator engine ignition, strobe lights and nailers, as well as generic rectifiers, battery voltage regulators and converters. Also controls for power tools, home/brown goods and white goods appliances. A K G Absolute Maximum Ratings Sensitive SCRs Symbol Parameter Test Conditions Value Unit I T(RMS) RMS on-state current T C = 3 C 4 A I T(AV) Average on-state current T C = 3 C 2.56 A I TSM Peak non-repetitive surge current single half cycle; f = 5 Hz; (initial) = 25 C 25 single half cycle; f = 6 Hz; (initial) = 25 C 3 A I 2 t I 2 t Value for fusing t p = 8.3 ms 3.7 A 2 s di/dt Critical rate of rise of on-state current f = 6 Hz, = 5 C 5 A/μs I GM Peak gate current Pw=2 μs, = 5 C.5 A P G(AV) Average gate power dissipation = 5 C. W T stg Storage temperature range -4 to 5 C Operating junction temperature range -4 to 5 C V DSM /V RSM Peak non-repetitive blocking voltage Pw= μs V DRM /V RRM + V
Electrical Characteristics ( = 25 C, unless otherwise specified) Sensitive SCRs Symbol Test Conditions Value Unit I GT MIN. 2 μa V D = 6V R L = Ω MAX. 2 μa V GT MAX..8 V dv/dt V D = V DRM ; = 22Ω ; = 25 C MIN. 45 V/μs V GD V D = V DRM ; R L = 3.3 kω; = 25 C MIN..2 V V D = V DRM ; R L = 3.3 kω; TJ = 5 C MIN.. V V GRM I GR = μa MIN. 6 V I H I T = 2mA (initial) MAX. 6 ma t q t p =5µs; dv/dt=5v/µs; di/dt=-3a/µs MAX. 6 μs t gt I G = 2 x I GT ; PW = 5µs; I T = 8A TYP. 3 μs Static Characteristics Symbol Test Conditions Value Unit V TM I T = 8A; t p = 38 µs MAX..6 V = 25 C 4-6V 5 I DRM / I RRM @ V DRM / V RRM = 25 C, = 22Ω 4-6V MAX. μa = 5 C, = 22Ω 4-6V 3 Thermal Resistances Symbol Parameter Value Unit R θ(j-c) Junction to case (AC).5 C/W Figure : Normalized DC Gate Trigger Current vs. Junction Temperature (Sensitive SCR) Figure 2: Normalized DC Gate Trigger Voltage vs. Junction Temperature.8.4 Ratio of I GT / I GT ( = 25 C).6.4.2.8.6.4 =22Ω =K Ratio of V GT / V GT ( = 25 C).2.8.6.4.2.2-4 -5 35 6 85 35 5 Junction Temperature ( ) -- ( C) -4-5 35 6 85 35 5 Junction Temperature ( ) -- ( C)
Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: On-State Current vs. On-State Voltage (Typical) Ratio of IH / IH ( = 25 C).6.4.2.8.6.4.2-4 -5 35 6 85 35 Junction Temperature ( ) -- ( C) 5 Intantaneous On-state Current (IT) Amps 5 2 9 6 3.7.8.9..2.3.4.5.6.7.8.9 2 Instantaneous On-state Voltage (V T) Volts Figure 5: Power Dissipation (Typical) vs. RMS On-State Current Figure 6: Maximum Allowable Case Temperature vs. RMS On-State Current 5 6 Average On-State Power Dissipation [PD(AV)] - (Watts) 4.5 4 3.5 3 2.5 2.5.5 C Maximum Allowable Case Temperature (TC)- 5 4 3 2 9 2 3 4 RMS On-State Current [I T (RMS) ] -(Amps) 8 2 3 4 5 RMS On-State Current [I T (RMS)] -(Amps) Figure 7: Maximum Allowable Case Temperature vs. Average On-State Current 6 Figure 8: Peak Capacitor Discharge Current C Maximum Allowable Case Temperature (TC)- 5 4 3 2 9 8.5..5 2. 2.5 3. 3.5 Average On -State Current [AV] - (Amps) Peak Discharge Current (I TM ) - Amps I TRM t W.5.. 5. Pulse Current Duration (t W ) - ms
Figure 9: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-state Current (I TSM ) Amps SUPPLY FREQUENCY: 6 Hz Sinusoidal LOAD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes:. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value. Surge Current Duration -- Full Cycles Figure : Typical DC Gate Trigger Current with vs. Junction Temperature Figure : Typical DC Holding Current with vs. Junction Temperature..E+ =Ω =Ω =22Ω I GT (ma). =47Ω IH (ma).e+ =22Ω =47Ω =KΩ =KΩ. -4-5 35 6 85 35 5 Junction Temperature (T ) -- ( C).E-3-4 -5 35 6 85 35 5 Junction Temperature (T ) -- ( C) Figure 2: Typical Static dv/dt with vs. Junction Temperature =Ω Static dv/dt (V/μs) =22Ω =47Ω =KΩ 25 75 25
Temperature Thyristors Soldering Parameters Reflow Condition Pre Heat - Temperature Min (T s(min) ) 5 C - Temperature Max (T s(max) ) 2 C Pb Free assembly - Time (min to max) (t s ) 6 8 secs Average ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T S(max) to T L - Ramp-up Rate 5 C/second max - Temperature (T L ) (Liquidus) 27 C Reflow - Time (t L ) 6 5 seconds Peak Temperature (T P ) 26 +/-5 C Time within 5 C of actual peak Temperature (t p ) 2 4 seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 28 C Physical Specifications Terminal Finish Body Material Lead Material Design Considerations % Matte Tin-plated UL Recognized epoxy meeting flammability rating V- Copper Alloy Careful selection of the correct component for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. T P T L T S(max) T S(min) 25 t S Ramp-up Preheat time to peak temperature Environmental Specifications Test AC Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Resistance to Solder Heat Solderability Lead Bend Moisture Sensitivity Level t P t L Ramp-down Time Specifications and Conditions MIL-STD-75, M-4, Cond A Applied Peak AC voltage for 8 hours MIL-STD-75, M-5, cycles; -4 C to +5 C; 5-min dwell-time EIA / JEDEC, JESD22-A 8 hours; 6V - DC: 85 C; 85% rel humidity MIL-STD-75, M-3, 8 hours; 5 C 8 hours; -4 C MIL-STD-75 Method 23 ANSI/J-STD-2, category 3, Test A MIL-STD-75, M-236 Cond E Level, JEDEC-J-STD-2
Dimensions TO-25AA (V/I-Package) V/I-PAK Through Hole E D T C MEASURING POINT H J AREA:.4 IN 2 5.28.28 Inches Millimeters Dimension Min Typ Max Min Typ Max A.37.4.43.94..9 A B 5.34.2 B.235.242.245 5.97 6.5 6.22 C.35.36.375 8.89 9.8 9.53 D.25.28.23 5.2 5.29 5.4 E.255.262.265 6.48 6.66 6.73 C P Q R S K F.27.3.33.69.8.84 G.87.9.93 2.2 2.28 2.36 H.85.92.95 2.6 2.34 2.4 I.76.8.84 4.47 4.57 4.67 J.8.2.23.46.5.58 Cathode GATE I G F L K.35.37.39.9.95. L.8.2.23.46.52.58 P.42.47.52.6.2.32 Q.34.39.44.86.. R.34.39.44.86.. S.74.79.84.86 2. 2. Dimensions TO-252AA (D-Package) D-PAK Surface Mount A B E D T C MEASURING POINT 5.28.28 5.34.2 6.7.264 6.7.264 Dimension Inches Millimeters Min Typ Max Min Typ Max A.37.4.43.94..9 B.235.243.245 5.97 6.6 6.22 C Cathode I G P Q GATE F O L N AREA:.4 IN 2 M K J H.6.63 3.8 4.6.8.8.7 C.6.8.3 2.69 2.74 2.87 D.25.28.23 5.2 5.29 5.4 E.255.262.265 6.48 6.65 6.73 F.27.3.33.69.8.84 G.87.9.93 2.2 2.28 2.36 H.85.92.95 2.6 2.33 2.4 I.76.79.84 4.47 4.55 4.67 J.8.2.23.46.5.58 K.35.37.39.9.95. L.8.2.23.46.5.58 M...4... N.2.26.27.53.67.69 O 5 5 P.42.47.52.6.2.32 Q.34.39.44.86..
TO-252 Embossed Carrier Reel Pack (RP) Specifications Meets all EIA-48-2 Standards.57 (4.) Gate.59 Dia (.5) Cathode.63 (6.).524 (3.3) * XXXXXX DC XXXXXX DC XXXXXX DC XXXXXX * Cover tape.35 (8.).52 (3.) Arbor Hole Dia. 2.99 (33.) Dimensions are in inches (and millimeters)..64 (6.3) Direction of Feed Product Selector Voltage Part Number 4V 6V Gate Sensitivity Type Package SJxx4VS2 X X.2mA Sensitive SCR TO-25 SJxx4DS2 X X.2mA Sensitive SCR TO-252 Note: xx = Voltage Packing Options Part Number Marking Weight Packing Mode Base Quantity SJxx4DS2TP SJxx4DS2.3 g Tube 75 (75 per tube) SJxx4DS2RP SJxx4DS2.3 g Embossed Carrier 25 SJxx4VS2TP SJxx4VS2.4 g Tube 75 (75 per tube) Note: xx = Voltage Part Numbering System COMPONENT TYPE SJ: SCR VOLTAGE RATING 4 : 4V 6 : 6V CURRENT 4: 4A SJ 6 4 D S2 SENSITIVITY S2:.2mA PACKAGE TYPE V:TO-25 (VPAK) D:TO-252 (DPAK) Part Marking System SJxx4DS2 YMLDD Date Code Marking Y:Year Code M: Month Code L: Location Code DD: Calendar Code Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimier-electronics.
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