Low power, Programmable SMD MEMS Oscillator

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Moisture Sensitivity Level (MSL) 1 SD Sensitive AS: APPLICAIONS: GPON, PON Portable devices Consumer electronics Network switches, router, servers thernet, S, SAA, SAS, irewire Harsh environment (vibration, shock-prone and humid) Industry Standard package sizes: 2.0 x 1.6 x 0.75mm, 2.5 x 2.0 x 0.75mm, 3.2 x 2.5 x 0.75mm, 5 x 3.2 x 0.75mm, Any frequency between 1MHz and 137MHz Supply oltage options: 3.3, 3.0, 2.8, 2.5, 1.8, 2.25 ~ 3.63 Low Current Consumption: 3.5mA typ. (@20MHz, 1.8, no load); 4.9mA typ. (@125MHz, 1.8, no load) requency Stability options: ±20ppm, ±25ppm, ±50ppm over -20 to +70 C and -40 to +85 C actory programmable drive strength for improved jitter, reduced MI or higher capacitive output load High Performance MMS echnology by Siime SANDAD SPCIICAIONS: All Min and Max limits are specified over temperature and rated operating voltage with 15p output load unless otherwise stated. ypical values are at 25 C and nominal supply voltage. Parameters Min yp Max nit Notes 1 110 Output requency ange () MHz 115 137 See Section 1.1 for Standard requencies MHz Standard requencies Inclusive of initial tolerance at 25 C, 1st -20 +20 year aging at 25 C, and variations over requency Stability (stab) -25 +25 ppm operating temperature, rated power -50 +50 supply voltage and load (15p±10%) Option -20 +70 C Operating emperature ange (use) Option L -40 +85 Option 18 1.62 1.8 1.98 Option 25 2.25 2.5 2.75 Option 28 2.52 2.8 3.08 Supply oltage (dd) Option 30 2.7 3.0 3.3 Option 33 2.97 3.3 3.63 Option lank 2.25 3.63 Current Consumption ( Idd ) 3.8 4.5 3.7 3.5 4.2 4.1 6.2 7.5 5.5 4.9 6.4 5.6 4.2 O Disable Current (IOD) Standby Current (Istd) Startup ime (start) nable/disable ime (oe) esume ime ( resume) 4.0 2.6 4.3 1.4 2.5 0.6 1.3 5 No load, =20MHz, dd=2.8,3.0,3.3 or 2.25-3.63 No load, =20MHz, dd=2.5 ma No load, =125MHz, dd=1.8 ma µa ms 130 122 5 ns ms No load, =20MHz, dd=1.8 No load, =125MHz, dd=2.8,3.0,3.3 or 2.25-3.63 No load, =125MHz, dd=2.5 dd=2.5-3.3, O=GND, output is in High-Z state dd=1.8, O=GND, output is in High-Z state S=GND, dd=2.8-3.3, output is weakly pulled down S=GND, dd=2.5, output is weakly pulled down S=GND, dd=1.8, output is weakly pulled down Measured from the time dd reaches its rated minimum value =110MHz. or other frequencies, oe=100ns+3*cycles =137MHz. or other frequencies, oe=100ns+3*cycles Measured from the time S pin crosses 50% threshold

(Continued) Parameters Min Output ype Duty Cycle yp Max nit 55 2 2.5 2 % Notes LCMOS 45 1 1.3 ise/all ime ( r /f) All dd options dd=2.5, 2.8, 3.0 or 3.3, 20%-80% ns dd=1.8, 20%-80% dd=2.25-3.63, 20%-80% IOH=-4mA (dd=3.0 or 3.3) Output High oltage (OH) 90%*dd IOH=-3mA (dd=2.8 or 2.5) IOH=-2mA (dd=1.8) IOL=4mA (dd=3.0 or 3.3) Output Low oltage (OL) 10%*dd IOL=3mA (dd=2.8 or 2.5) IOL=2mA (dd=1.8) Input High oltage(ih) Input Low oltage(il) 70%*dd 50 Input Pull-up Impedance ( Zin) Peak-to-peak Period Jitter (pk) MS Phase Jitter (random) ( phj) Standard requency (MHz) 4 19.2 30 37.5 62.5 74.175824 150 kω 2 MS Period Jitter ( jitt) 3.57 18.432 28.6363 33.3333 60 72 87 30%*dd 4.096 20 31.25 38 65 74.176 MΩ 1.8 3 1.8 3 1.9 3 1.8 4 12 25 14 30 0.5 0.9 1.3 2 Standard requency (MHz) 6 7.3728 8.192 24 24.576 25 32.768 33 33.3 38.4 40 40.5 66 66.66 66.66 74.25 75 77.76 Pin 1 Pin 1 Pin 1, O logic high or logic low, S logic high Pin 1, S logic low =75MHz, dd=2.5, 2.8, 3.0 or 3.3 ps =75MHz, dd=1.8 =125MHz, dd=2.5, 2.8, 3.0 or 3.3 =125MHz, dd=1.8 ps ps =75MHz, 125MHz, dd=2.5, 2.8, 3.0 or 3.3 =75MHz, 125MHz, dd=1.8 =75MHz, integration bandwidth=900khz to 7.5MHz =75MHz, integration bandwidth=12khz to 20MHz 10 25.000625 33.33 48 66.666 12 26 33.333 50 66.6666 14 27 33.3333 54 66.66666

Absolute Maximum atings Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameters Storage e mperature DD lectrostatic Discharge (HM) Soldering emperature (follow standard free soldering guidelines) Junction emperature (1) Min. -65-0. 5 Max. 150 4 2000 nit C 260 C 150 C Note: 1. xceeding this temperature for extended period of time may damage the device hermal Consideration θja, 4 Layer oard ( C/W) 142 97 Package 7.0 x 5.0mm 5.0 x 3.2mm 3.2 x 2.5mm 2.5 x 2.0mm 2.0 x 1.6mm 109 117 152 θja, 2 Layer oard ( C/W) 273 199 212 222 252 θjc, ottom ( C/W) 30 24 27 26 36 Maximum Operating Junction emperature (2) Max. Operating emperature (ambient) 70 C 85 C Max. Operating Junction emperature 80 C 95 C Note: 2. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature PA IDNIICAION: - Package Size A: 2.0x1.6mm D: 2.5x2.0mm : 3.2x2.5mm L: 5.0x3.2mm : 7.0x5.0mm - Output requency in MHz e.g. 7.3728, 125.000 MHz- req. Stability J: ±20ppm : ±25 ppm C: ±50 ppm - Pin 1 unction : Output nable S: Standby N: No Connect Operating emp. : -20 C ~ +70 C L: -40 C ~ +85 C Supply oltage lank: 2.25~3.63 18: 1.8±10% 25: 2.5±10% 28: 2.8±10% 30: 3.0±10% 33: 3.3±10% - Packaging lank: ulk : ape & eel (1kpcs / reel) 3: ape & eel (3kpcs / reel) Output * lank: Default L** A** * See able 1 to 5 for the ise/all times at different drive strength and available options ** Only available for =1MHz~110MHz

able 1: dd=1.8 ise/all imes for Specific (a) Output requency: 1MHz 110MHz ise/all ime yp. (ns) Drive Strength 5p 15p 30p 45p 6.16 11.61 22.00 31.27 L 3.19 6.35 1 16.01 A 2.11 4.31 7.65 10.77 1.65 3.23 5.79 8.18 0.93 1.91 3.32 4.66 0.78 1.66 2.94 4.09 0.70 1.48 2.64 3.68 or lank 0.65 1.30 2.40 3.35 60p 39.91 22 14.47 11.08 6.48 5.74 5.09 (b) Output requency: 115MHz 137MHz ise/all ime yp. (ns) 5p 15p 0.93 0.78 0.70 1.48 or lank 0.65 1.30 4.56 able 2: dd=2.5 ise/all imes for Specific (a) Output requency: 1MHz 110MHz ise/all ime yp. (ns) 5p 15p 30p 45p 4.13 8.25 12.82 21.45 L 2.11 4.27 7.64 11.20 A 1.45 2.81 5.16 7.65 1.09 2.20 3.88 5.86 0.62 1.28 2.27 3.51 or lank 0.54 2.01 3.10 0.43 0.96 1.81 2.79 0.34 0.88 1.64 2.54 60p 27.79 14.49 9.88 7.57 4.45 4.01 3.65 3.32 (b) Output requency: 115MHz 137MHz ise/all ime yp. (ns) 5p 15p 1.45 1.09 0.62 1.28 or lank 0.54 0.43 0.96 0.34 0.88 able 3: dd=2.8 ise/all imes for Specific (a) Output requency: 1MHz 110MHz ise/all ime yp. (ns) 5p 15p 30p 45p 3.77 7.54 12.28 19.57 L 1.94 3.90 7.03 10.24 A 1.29 2.57 4.72 7.01 0.97 2.00 3.54 5.43 0.55 1.12 2.08 3.22 or lank 0.44 1.83 2.82 0.34 0.88 1.64 2.52 0.29 0.81 1.48 2.29 60p 25.27 13.34 9.06 6.93 4.08 3.67 3.30 2.99 (b) Output requency: 115MHz 137MHz ise/all ime yp. (ns) 5p 15p 30p 1.29 0.97 0.55 1.12 or lank 0.44 0.34 0.88 0.29 0.81 1.48

able 4: dd=3.0 ise/all imes for Specific (a) Output requency: 1MHz 110MHz ise/all ime yp. (ns) 5p 15p 30p 45p 3.60 7.21 11.97 18.74 L 1.84 3.71 6.72 9.86 A 1.22 2.46 4.54 6.76 0.89 1.92 3.39 5.20 or lank 0.51 1.97 3.07 0.38 0.92 1.72 2.71 0.30 0.83 5 2.40 0.27 0.76 1.39 2.16 60p 24.30 12.68 8.62 6.64 3.90 3.51 3.13 2.85 (b) Output requency: 115MHz 137MHz ise/all ime yp. (ns) 5p 15p 30p 1.22 0.89 or lank 0.51 0.38 0.92 0.30 0.83 0.27 0.76 1.39 able 5: dd=3.3 ise/all imes for Specific (a) Output requency: 1MHz 110MHz ise/all ime yp. (ns) 5p 15p 30p 45p 3.39 6.88 11.63 17.56 L 1.74 3.50 6.38 8.89 A 1.16 2.33 4.29 6.04 0.81 1.82 3.22 4.52 or lank 0.46 1.86 2.60 0.33 0.87 1.64 2.30 0.28 0.79 1.46 2.05 0.25 0.72 1.31 1.83 60p 23.59 12.19 8.34 6.33 3.84 3.35 2.93 2.61 (b) Output requency: 115MHz 137MHz ise/all ime yp. (ns) 5p 15p 30p 1.16 0.81 or lank 0.46 0.33 0.87 0.28 0.79 1.46 0.25 0.72 1.31 CALCLAING MAXIMM QNCY ased on the rise and fall time data given in able 1 through 5, the maximum frequency the oscillator can operate with a guaranteed full swing of the output voltage over temperature is calculated as follows: 1 xample: Calculate max of a 1MHz ~ 110MHz device with the following condition: º dd = 1.8 (able 1) º Capacitive Load = 30p º Desired r/f ime: = 3ns (rise/fall time option code ) he max is 66.66666MHz.

YPICAL POMANC DAA All plots are measured with 15p load at room temperature, unless otherwise stated. IDD vs. requency requency vs. emperature

YPICAL POMANC DAA MS Period Jitter vs. requency Duty Cycle vs. requency

YPICAL POMANC DAA 20% - 80% ise ime vs. emperature 20% - 80% all ime vs. emperature

YPICAL POMANC DAA MS Integrated Phase Jitter andom (12kHz to 20MHz) vs requency (3) MS Integrated Phase Jitter andom (900kHz to 20MHz) vs requency (3) Notes: 3. Phase noise plots are measured with Agilent 5052 signal source analyzer. Integration range is up to 5MHz for carrier frequencies below 40MHz.

OLIN DIMNSION: 2.0 x 1.6mm Package (Option A ) ecommended Land Pattern 2.5 x 2.0mm Package (Option D ) ecommended Land Pattern 3.2 x 2.5mm Package (Option ) ecommended Land Pattern

OLIN DIMNSION: 5.0 x 3.2mm Package (Option L ) ecommended Land Pattern 7.0 x 5.0mm Package (Option ) ecommended Land Pattern Pin Name Output nable 1 O/S Standby No Connect 2 3 4 GND Out dd Power Output Power unctionality H or Open (4): specified frequency output L: output is high impedance. Only output driver is disabled H or Open (4): specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to Istd. Any voltage between 0 and dd or Open (4): specified frequency output. Pin 1 has no function. lectrical ground (5) Oscillator clock output Power supply voltage (5) Notes: 4. In O or S mode, a pull-up resistor of <10kΩ between O/S pin and dd is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 5. A capacitor value of 0.1µ between dd and GND is required. Dimensions: mm

LOW POIL: Item Conditions S MAX to L (amp-up ate) 3 C/second max Preheat emperature Minimum (S MIN) 150 C emperature ypical (S YP) 175 C emperature Maximum (S MAX) 200 C ime (ts) 60 180 seconds amp-up ate (L to P) 3 C/second max ime Maintained Above emperature (L) 217 C ime (tl) 60 150 seconds Peak emperature (P) 260 C max arget Peak emperature (P arget) 255 C ime within 5 C of actual peak (tp) 20 40 seconds Max. Number of eflow Cycles 3 amp-down ate 6 C/second max ime 25 C to Peak emperature (t) 8 minutes max AP & L: Device Size 2016 2520 3225 5032 7050 D0 5±0.05 5±0.05 +0.1/0.0 +0.1/0.0 +0.1/0.0 Device Size 2016 2520 3225 5032 7050 D1 min. 0.9 1.0 1 1.75±0.1 1.75±0.1 2 min. 6.05 5.85 3.5±0.05 3.5±0.05 P0 P1 P2 2.0±0.05 2.0±0.05 1.0 1.75±0.1 5.95 3.5±0.05 2.0±0.05 1.75±0.1 10.25 5.5±0.05 8.0±0.1 2.0±0.05 1.75±0.1 14.25 7.5±0.1 8.0±0.1 2.0±0.1 0.3±0.05 0.3±0.05 0.2±0.05 0.6 0.6 1 max. 0.1 0.1 0.1 0.1 0.1 2 max. 5 1.65 1.6 1.65 1.80 W max. 8.3 8.3 8.2 12.3 16.3 A0 1.9±0.05 2.25±0.05 2.7±0.10 3.5±0.10 5.4±0.10 0 2.3±0.05 2.8±0.05 3.4±0.10 5.3±0.10 7.4±0.10 K0 ±0.10 1.10±0.10 1.15±0.10 1.10±0.10 1.3±0.10 nit: mm

AP & L: ape Size 8mm 12mm 16mm A max. 180 180 330 180 330 Device Size 2016 2520 3225 5032 7050 min. C 13.0+0.6/-0.2 13.0±0.2 13.0±0.2 13.0±0.2 13.0±0.2 D min. 20.2 20.2 20.2 20.2 20.2 (1k/reel) 8mm ape 7 eel 8mm ape 7 eel 8mm ape 7 eel 12mm ape 7 eel 16mm ape 7 eel N 60±0.5 60±0.5 100±0.5 60±0.5 100±0.5 nit: mm W1 W2 max. 8.4+/-0 14.4 12.4+2.0/-0 18.4 12.4+2.0/-0 18.4 16.4+2.0/-0 22.4 16.4+2.0/-0 22.4 3 (3k/reel) 8mm ape 7 eel 8mm ape 7 eel 8mm ape 7 eel 12mm ape 13 eel 16mm ape 13 eel ANION: Abracon Corporation s products are COS Commercial-Off-he-Shelf products; suitable for Commercial, Industrial and, where designated, Automotive Applications. Abracon s products are not specifically designed for Military, Aviation, Aerospace, Life-dependant Medical applications or any application requiring high reliability where component failure could result in loss of life and/or property. or applications requiring high reliability and/or presenting an extreme operating environment, written consent and authorization from Abracon Corporation is required. Please contact Abracon Corporation for more information.