... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc (Min) TIP120, TIP125 = 80 Vdc (Min) TIP121, TIP126 = 100 Vdc (Min) TIP122, TIP127 Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built In Base Emitter Shunt Resistors TO 220AB Compact Package *MAXIMUM RATINGS ÎÎ TIP120, TIP121, TIP122, Rating ÎÎÎÎ Symbol ÎÎÎ TIP125 ÎÎÎÎ TIP126ÎÎÎÎ TIP127 ÎÎÎ Unit Collector Emitter Voltage ÎÎÎÎ VCEO ÎÎÎ 60 ÎÎÎÎ 80 ÎÎÎÎ 100 ÎÎÎ Vdc Collector Base Voltage ÎÎÎÎ VCB ÎÎÎ 60 ÎÎÎÎ 80 ÎÎÎÎ 100 ÎÎÎ Vdc Emitter Base Voltage VEB 5.0 Vdc ÎÎ Collector Current Continuous IC 5.0 Adc Peak Î 8.0 ÎÎÎ Base Current ÎÎÎÎ IB ÎÎ 120 ÎÎÎ madc Total Power Dissipation @ TC = 25 CÎÎÎÎ PD ÎÎ 65 ÎÎÎ Watts Derate above 25 C 0.52 W/ C ÎÎ Total Power Dissipation @ TA = 25 C PD 2.0 Watts Derate above 25 C Î 0.016 ÎÎÎ W/ C Unclamped Inductive Load Energy (1)ÎÎÎÎ E ÎÎ 50 ÎÎÎ mj Operating and Storage Junction, ÎÎÎÎ TJ, Tstg ÎÎ 65 to + 150 ÎÎÎ C Temperature Range ÎÎ THERMAL CHARACTERISTICS ÎÎ Characteristic Symbol Max Unit ÎÎ Thermal Resistance, Junction to Case ÎÎÎÎÎ RθJC 1.92 ÎÎÎ C/W ÎÎ Thermal Resistance, Junction to Ambient ÎÎÎÎÎ RθJA 62.5 ÎÎÎ C/W (1) IC = 1 A, L = 100 mh, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω. *ON Semiconductor Preferred Device DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 100 VOLTS 65 WATTS 4 1 2 3 CASE 221A 09 TO 220AB Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 Rev. 5 1 Publication Order Number: TIP120/D
Figure 1. Power Derating 2
ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic ÎÎÎÎÎ Symbol ÎÎÎ Min ÎÎÎÎ Max ÎÎÎ Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (1) Î VCEO(sus) Vdc (IC = 100 madc, IB = 0) TIP120, TIP125 60 ÎÎÎÎ ÎÎÎ TIP121, TIP126 80 ÎÎÎ TIP122, TIP127 100 ÎÎÎÎ ÎÎÎ Collector Cutoff Current ICEO madc (VCE = 30 Vdc, IB = 0) TIP120, TIP125 (VCE = 40 Vdc, IB = 0) TIP121, TIP126 ÎÎÎ (VCE = 50 Vdc, IB = 0) TIP122, TIP127 ÎÎÎÎ 0.5 ÎÎÎ 0.5 0.5 Collector Cutoff Current ICBO madc (VCB = 60 Vdc, IE = 0) TIP120, TIP125 ÎÎÎ ÎÎÎ (VCB = 80 Vdc, IE = 0) TIP121, TIP126 0.2 ÎÎÎ ÎÎÎÎ 0.2 ÎÎÎ (VCB = 100 Vdc, IE = 0) TIP122, TIP127 0.2 Emitter Cutoff Current IEBO (VBE = 5.0 Vdc, IC = 0) ÎÎÎÎ ÎÎÎ 2.0 madc ON CHARACTERISTICS (1) DC Current Gain ÎÎÎÎÎ hfe Î (IC = 0.5 Adc, VCE = 3.0 Vdc) 1000ÎÎÎÎ ÎÎÎ (IC = 3.0 Adc, VCE = 3.0 Vdc) 1000 Collector Emitter Saturation Voltage VCE(sat) Vdc (IC = 3.0 Adc, IB = 12 madc) Î ÎÎÎ (IC = 5.0 Adc, IB = 20 madc) 2.0 ÎÎÎÎ 4.0 ÎÎÎ Base Emitter On Voltage ÎÎÎÎÎ VBE(on) ÎÎÎ (IC = 3.0 Adc, VCE = 3.0 Vdc) ÎÎÎÎ 2.5 ÎÎÎ Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain hfe (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) 4.0 Output Capacitance Cob pf (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127 ÎÎÎ TIP120, TIP121, TIP122 ÎÎÎÎÎ 300 ÎÎÎ 200 (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. µ Figure 2. Switching Times Test Circuit for t d and t r, D 1 is disconnected and V 2 = 0 For NPN test circuit reverse all polarities. µ Figure 3. Switching Times 3
θθ θ θ Figure 4. Thermal Response µ µ Figure 5. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150 C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150 C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown Figure 6. Small Signal Current Gain Figure 7. Capacitance 4
NPN TIP120, TIP121, TIP122 PNP TIP125, TIP126, TIP127 Figure 8. DC Current Gain Figure 9. Collector Saturation Region Figure 10. On Voltages 5
PACKAGE DIMENSIONS TO 220AB CASE 221A 09 ISSUE AA H Q Z L V G B N D A K F T U S R J C T 6
Notes 7
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