SEMICONDUCTOR TECHNICAL DATA
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1 SEMICONDUCTOR TECHNICAL DATA Order this document by TIP47/D... designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. 25 V to 4 V (Min) VCEO(sus) 1 A Rated Collector Current Popular TO 22 Plastic Package Î MAXIMUM RATINGS Rating Symbol TIP47 TIP48 TIP49 ÎÎ TIP5 Unit Collector Emitter Voltage ÎÎ VCEO Vdc Collector Base Voltage ÎÎ VCB Vdc Emitter Base Voltage VEB 5. Vdc Collector Current Continuous IC Adc Î Peak Base Current IB.6 Adc Î Total Power Dissipation TC = 25 C Î 4 Watts Î Derate above 25 C.32 W/ C Total Power Dissipation PD TA = 25 C Watts Î Derate above 25 C.16 W/ C Î Unclamped Inducting Load E 2 mj Î Energy (See Figure 8) Operating and Storage Junction TJ, Tstg 65 to +15 C Î Temperature Range THERMAL CHARACTERISTICS Î Characteristic Symbol Max Unit Î Thermal Resistance, Junction to Case RθJC C/W ÎÎ Thermal Resistance, Junction to Ambient RθJA 62.5 C/W *Motorola Preferred Device AMPERE POWER TRANSISTORS NPN SILICON VOLTS 4 WATTS CASE 221A 6 TO 22AB TA 4 TC 4 PD, POWER DISSIPATION (WATTS) TA TC TC, CASE TEMPERATURE ( C) Figure 1. Power Derating 16 Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc Motorola Bipolar Power Transistor Device Data 1
2 Î ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit Î OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (1) TIP47 (IC = 3 madc, IB = ) TIP48 ÎÎ VCEO(sus) 25 Vdc 3 TIP49 35 TIP5 4 Î Collector Cutoff Current ICEO madc (VCE = 15 Vdc, IB = ) TIP47 (VCE = 2 Vdc, IB = ) TIP48 (VCE = 25 Vdc, IB = ) TIP49 ÎÎ (VCE = 3 Vdc, IB = ) TIP5 Collector Cutoff Current ICES ÎÎ madc (VCE = 35 Vdc, VBE = ) TIP47 (VCE = 4 Vdc, VBE = ) TIP48 (VCE = 45 Vdc, VBE = ) TIP49 (VCE = 5 Vdc, VBE = ) TIP5 Emitter Cutoff Current IEBO madc Î (VBE = 5. Vdc, IC = ) ON CHARACTERISTICS (1) Î DC Current Gain hfe ÎÎ (IC =.3 Adc, VCE = 1 Vdc) 3 15 (IC = Adc, VCE = 1 Vdc) 1 Collector Emitter Saturation Voltage VCE(sat) Vdc ÎÎ (IC = Adc, IB = Adc) Base Emitter On Voltage VBE(on) (IC = Adc, VCE = 1 Vdc) 1.5 Vdc ÎÎ Î DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product ft 1 MHz Î (IC = Adc, VCE = 1 Vdc, f = MHz) Small Signal Current Gain hfe 25 (IC = Adc, VCE = 1 Vdc, f = khz) (1) Pulse Test: Pulse width 3 µs, Duty Cycle %. TURN ON PULSE APPROX +11 V Vin VEB(off) t1 VCC Vin RC RB SCOPE.5 tr TJ = 25 C VCC = 2 V IC/IB = 5. APPROX +11 V Vin t2 t3 TURN OFF PULSE t1 7. ns 1 < t2 < 5 µs t3 < 15 ns Cjd << Ceb DUTY CYCLE % APPROX 9. V 4. V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. t, TIME ( µ s).5.1 td.5.5 Figure 2. Switching Time Equivalent Circuit Figure 3. Turn On Time 2 Motorola Bipolar Power Transistor Device Data
3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = SINGLE PULSE ZθJC(t) = r(t) RθJC RθJC = C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) ZθJC(t) t, TIME (ms) Figure 4. Thermal Response P(pk) t1 t 2 DUTY CYCLE, D = t1/t2 k TC 25 C ms SECONDARY BREAKDOWN LIMITED THERMALLY 25 C BONDING WIRE LIMITED CURVES APPLY BELOW RATED VCEO VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area dc TIP47 TIP48 TIP49 TIP5 1 µs 5 µs There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 15 C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 1% provided TJ(pk) 15 C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. t, TIME ( µ s) ts tf Figure 6. Turn Off Time TJ = 25 C VCC = 2 V IC/IB = 5. V, TEMPERATURE COEFFICIENTS (mv/ C) θ *APPLIES FOR IC/IB hfe/ C to + 15 C +.5 θvc FOR VCE(sat).5 55 C to + 25 C + 25 C to + 15 C 1.5 θvb FOR VBE 55 C to + 25 C Figure 7. Temperature Coefficients Motorola Bipolar Power Transistor Device Data 3
4 INPUT 5 5 MJE171 VBB1 = 1 V RBB1 = 15 Ω RBB2 = 1 Ω VBB2 = VCE MONITOR TUT RS = Ω 1 mh VCC = 2 V IC MONITOR Note A: Input pulse width is increased until ICM =.63 A. INPUT VOLTAGE COLLECTOR CURRENT COLLECTOR VOLTAGE V 5 V.63 A V VCER 1 V VCE(sat) tw 3 ms (SEE NOTE A) 1 ms Figure 8. Inductive Load Switching hfe, DC CURRENT GAIN TJ = 15 C 25 C 55 C VCE = 1 V V, VOLTAGE (VOLTS) IC/IB = 5. V VCE = 4 V IC/IB = 5. V Figure 9. DC Current Gain Figure 1. On Voltages 4 Motorola Bipolar Power Transistor Device Data
5 PACKAGE DIMENSIONS H Q Z L V G B N D A K F T U R S J C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z.8 4 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 221A 6 TO 22AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5
6 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 2912; Phoenix, Arizona F Seibu Butsuryu Center, Tatsumi Koto Ku, Tokyo 135, Japan MFAX: RMFAX@ .sps.mot.com TOUCHTONE (62) HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Bipolar Power Transistor Device Data TIP47/D
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More informationFour Transistors Equal Power Each. Watts mw/ C Watts mw/ C TJ, Tstg 55 to +150 C. Characteristic Symbol Min Max Unit
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SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified
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A A A A MJE3009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE3009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended
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