4V Drive Pch MOSFET RSD4P6 Structure Silicon P-channel MOSFET Features ) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching Packaging specifications Package Taping Type Code TL Basic ordering unit (pieces) 25 RSD4P6 Absolute maximum ratings (T a = 25 C) Symbol Limits Unit Drain-source voltage V DSS 6 V Gate-source voltage V GSS 2 V Drain current Continuous I D 4 A Pulsed I DP * 28 A Source current Continuous I S 4 A (Body Diode) Pulsed I SP * 28 A Power dissipation P D *2 2 W Channel temperature T ch 5 C Range of storage temperature T stg 55 to 5 C * Pw s, Duty cycle % *2 T c =25 C Dimensions (Unit : mm) CPT3 (SC-63) <SOT-428> Inner circuit () Gate (2) Drain (3) Source 2 () (2) (3) ESD PROTECTION DIODE 2 BODY DIODE Thermal resistance Symbol Limits Unit Channel to Case R th (ch-c) 6.25 C / W * T c =25 C * /6 2.8 - Rev.A
RSD4P6 Electrical characteristics (T a = 25 C) Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I GSS - - A V GS = 2V, V DS =V Drain-source breakdown voltage V (BR)DSS 6 - - V I D = ma, V GS =V Zero gate voltage drain current I DSS - - A V DS = 6V, V GS =V Gate threshold voltage V GS (th). - 3. V V DS = V, I D = ma - 6 84 I D = 4A, V GS = V Static drain-source on-state * R - 73 3 m I D = 4A, V GS = 4.5V resistance DS (on) - 77 8 I D =-4A, V GS =-4.V Forward transfer admittance l Y fs l* - - S I D = 4A, V DS = V Input capacitance C iss - 9 - pf V DS = V Output capacitance C oss - 2 - pf V GS =V Reverse transfer capacitance C rss - - pf f=mhz Turn-on delay time t d(on) * - 2 - ns I D = 7.A, V DD 3V Rise time t r * - 45 - ns V GS = V Turn-off delay time t d(off) * - 24 - ns R L =4.3 Fall time t f * - - ns R G = Total gate charge Q g * - 27 - nc V DD 3V Gate-source charge Q gs * - 4.5 - nc I D = 4A, Gate-drain charge Q gd * - 5. - nc V GS = V *Pulsed Body diode characteristics (Source-Drain) (T a = 25 C) Symbol Min. Typ. Max. Unit Conditions Forward Voltage V SD * - -.2 V I s = 4A, V GS =V *Pulsed 2/6 2.8 - Rev.A
RSD4P6 Electrical characteristic curves (Ta=25 C) Fig. Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 8 6 4 2 V GS =-.V V GS =-4.5V V GS =-4.V V GS =-3.6V V GS =-3.4V V GS =-3.2V.2.4.6.8 Drain-Source Voltage : -V DS [V] V GS =-2.8V V GS =-2.5V Fig.3 vs. Drain Current.. V GS =-4.V V GS =-4.5V V GS =-V Fig.5 vs. Drain Current V GS =-4.5V 4 2 8 6 4 2 V GS =-.V V GS =-4.V V GS =-3.6V 2 4 6 8 Drain-Source Voltage : -V DS [V] V GS =-2.8V V GS =-2.6V V GS =-2.5V Fig.4 vs. Drain Current V GS =-V.. Fig.6 vs. Drain Current V GS =-4V.... 3/6 2.8 - Rev.A
RSD4P6 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics V DS =-V V DS =-V Forward Transfer Admittance Yfs [S] Switching Time : t [ns] Source Current : -Is [A]..... Fig.9 Source Current vs. Source-Drain Voltage V GS =V....5..5 Source-Drain Voltage : -V SD [V] Fig. Switching Characteristics t f t d(off) t r t d(on) V DD -3V V GS =-V R G =Ω Pulsed Drain Currnt : -I D [A] Gate-Source Voltage : -V GS [V].....5 2. 2.5 3. 3.5 3 25 2 5 5 Gate-Source Voltage : -V GS [V] Fig. vs. Gate-Source Voltage I D =-4A I D =-7A 2 4 6 8 2 4 6 8 2 Gate-Source Voltage : -V GS [V] Fig.2 Dynamic Input Characteristics V DD =-3V I D =-4A 8 Pulsed 6 4 2.. 2 4 6 8 2 4 6 8 2 22 24 26 28 Total Gate Charge : Q g [nc] 4/6 2.8 - Rev.A
RSD4P6 Fig.3 Typical Capacitance vs. Drain-Source Voltage Fig.4 Maximum Safe Operating Area f=mhz V GS =V Operation in this area is limited by R DS(on) (V GS = -V) T c =25 C Capacitance : C [pf] Normalized Transient Thermal Resistance : r(t).. Drain-Source Voltage : -V DS [V] C iss C oss C rss Fig.5 Normalized Transient Thermal Resistance v.s. Pulse Width.. T C =25 C Single Pulse..... Pulse width : Pw (s) Rth (ch-c) =6.25 C/W Rth (ch-c) (t)=r(t) Rth (ch-c) Drain Current : -I D [ A ] P W = ms. DC Operation.. Drain-Source Voltage : -V DS [ V ] P W = μs P W = ms 5/6 2.8 - Rev.A
RSD4P6 Measurement circuits Pulse width ID RL VDS % 5% 9% 5% RG Fig.- Switching Time Measurement Circuit IG(Const.) D.U.T. % % VDD Fig.2- Gate Charge Measurement Circuit ID D.U.T. RL VDD VDS VDS td(on) ton 9% 9% tr td(off) toff Fig.-2 Switching Waveforms VG Qgs Qgd Qg Fig.2-2 Gate Charge Waveform tf Charge 6/6 2.8 - Rev.A
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