ASML, Brion and Computational Lithography. Neal Callan 15 October 2008, Veldhoven

Similar documents
Holistic View of Lithography for Double Patterning. Skip Miller ASML

Holistic Lithography. Christophe Fouquet. Executive Vice President, Applications. 24 November 2014

Computational Lithography Requirements & Challenges for Mask Making. Naoya Hayashi, Dai Nippon Printing Co., Ltd

Imaging for the next decade

TWINSCAN XT:1950i Water-based immersion taken to the max Enabling fast, single-exposure lithography at sub 40 nm

Multiple Patterning for Immersion Extension and EUV Insertion. Chris Bencher Distinguished Member of Technical Staff Applied Materials CTO group

Optical Microlithography XXVIII

EUVL getting ready for volume introduction

Lithography on the Edge

PUSHING LITHOGRAPHY TO ENABLE ULTIMATE NANO-ELECTRONICS. LUC VAN DEN HOVE President & CEO imec

28nm and below: New Frontiers and Innovations in Design for Manufacturing. Vito Dai, Ph.D. Sr. Member of Technical Staff, DFM

Status and challenges of EUV Lithography

22nm node imaging and beyond: a comparison of EUV and ArFi double patterning

EUV lithography: today and tomorrow

Decomposition difficulty analysis for double patterning and. the impact on photomask manufacturability

Sub-12nm Optical Lithography with 4x Pitch Division and SMO-Lite

Advanced Patterning Techniques for 22nm HP and beyond

Imec pushes the limits of EUV lithography single exposure for future logic and memory

Impact of 3-D Mask Effects on CD and Overlay over Image Field in Extreme Ultraviolet Lithography

DATASHEET CADENCE QRC EXTRACTION

What s So Hard About Lithography?

Computational Lithography

Competitive in Mainstream Products

16nm with 193nm Immersion Lithography and Double Exposure

(Complementary E-Beam Lithography)

Metrology in the context of holistic Lithography

EUVL Scanners Operational at Chipmakers. Skip Miller Semicon West 2011

EUV Supporting Moore s Law

Hypersensitive parameter-identifying ring oscillators for lithography process monitoring

Closed Loop Registration Control (RegC ) Using PROVE as the Data Source for the RegC Process

Dialog on industry challenges and university research activities among technologists from Participating Companies, Students and Faculty

Intel's 65 nm Logic Technology Demonstrated on 0.57 µm 2 SRAM Cells

Correcting Image Placement Errors Using Registration Control (RegC ) Technology In The Photomask Periphery

A Study of Wafer Plane Analysis with Mask MVM-SEM using 2D and 3D Images

Leadership Through Innovation Litho for the future

Tutor43.doc; Version 8/15/03 T h e L i t h o g r a p h y E x p e r t (November 2003)

TECHNOLOGY ROADMAP 2006 UPDATE LITHOGRAPHY FOR

450mm patterning out of darkness Backend Process Exposure Tool SOKUDO Lithography Breakfast Forum July 10, 2013 Doug Shelton Canon USA Inc.

Facing Moore s Law with Model-Driven R&D

Changing the Approach to High Mask Costs

Double Patterning Combined with Shrink Technique to Extend ArF Lithography for Contact Holes to 22nm Node and Beyond

Optimizing FinFET Structures with Design-based Metrology

EUV lithography: status, future requirements and challenges

Post-OPC verification using a full-chip Pattern-Based simulation verification method

Optolith 2D Lithography Simulator

OPC Rectification of Random Space Patterns in 193nm Lithography

Light Sources for EUV Mask Metrology. Heiko Feldmann, Ulrich Müller

Managed Variability Present and Future of Design-Process Integration from 32nm to 22nm and beyond

Benefit of ArF immersion lithography in 55 nm logic device manufacturing

The future of lithography and its impact on design

Enabling Semiconductor Innovation and Growth

Light Source Technology Advances to Support Process Stability and Performance Predictability for ArF Immersion Double Patterning

Bank of America Merrill Lynch Taiwan, Technology and Beyond Conference

Evaluation of Technology Options by Lithography Simulation

Bridging the Gap between Dreams and Nano-Scale Reality

2008 European EUVL. EUV activities the EUVL shop future plans. Rob Hartman

Optical Maskless Lithography - OML

Feature-level Compensation & Control. Workshop September 13, 2006 A UC Discovery Project

Next-generation DUV light source technologies for 10nm and below

UV Nanoimprint Stepper Technology: Status and Roadmap. S.V. Sreenivasan Sematech Litho Forum May 14 th, 2008

Update on 193nm immersion exposure tool

Public. Introduction to ASML. Ron Kool. SVP Corporate Strategy and Marketing. March-2015 Veldhoven

Reducing Proximity Effects in Optical Lithography

The End of Thresholds: Subwavelength Optical Linewidth Measurement Using the Flux-Area Technique

Copyright 2004 by the Society of Photo-Optical Instrumentation Engineers.

Process Variability and the SUPERAID7 Approach

INTERNATIONAL TECHNOLOGY ROADMAP LITHOGRAPHY FOR SEMICONDUCTORS 2009 EDITION

Mask magnification at the 45-nm node and beyond

450mm and Moore s Law Advanced Packaging Challenges and the Impact of 3D

Nanometer Technologies: Where Design and Manufacturing Converge. Walden C. Rhines CHAIRMAN & CEO

Design Rules for Silicon Photonics Prototyping

Process Optimization

5 th Annual ebeam Initiative Luncheon SPIE February 26, Aki Fujimura CEO D2S, Inc. Managing Company Sponsor ebeam Initiative

Lithography. International SEMATECH: A Focus on the Photomask Industry

Optical Lithography. Keeho Kim Nano Team / R&D DongbuAnam Semi

Double Patterning Combined with Shrink Technique to Extend ArF Lithography for Contact Holes to 22nm Node and Beyond

Lithography. Development of High-Quality Attenuated Phase-Shift Masks

Challenges of EUV masks and preliminary evaluation

Manufacturing Characterization for DFM

DSA and 193 immersion lithography

Mask Technology Development in Extreme-Ultraviolet Lithography

Copyright 2000 by the Society of Photo-Optical Instrumentation Engineers.

Effects of grid-placed contacts on circuit performance

Chapter 15 IC Photolithography

MAPPER: High throughput Maskless Lithography

Electron Beam Lithography. Adam Ramm

Experimental Study of Effect of Pellicle on optical Proximity Fingerprint for 1.35 NA immersion ArF Lithography

R&D Status and Key Technical and Implementation Challenges for EUV HVM

TECHNOLOGY ROADMAP 2005 EDITION LITHOGRAPHY FOR

Immersion Lithography: New Opportunities for Semiconductor Manufacturing

Market and technology trends in advanced packaging

ECSE 6300 IC Fabrication Laboratory Lecture 3 Photolithography. Lecture Outline

High-NA EUV lithography enabling Moore s law in the next decade

Photolithography. References: Introduction to Microlithography Thompson, Willson & Bowder, 1994

Processing and Reliability Issues That Impact Design Practice. Overview

Feature-level Compensation & Control

5. Lithography. 1. photolithography intro: overall, clean room 2. principle 3. tools 4. pattern transfer 5. resolution 6. next-gen

REALISTIC METHOD OF 193 NM LITHOGRAPHY EXTENSIONS TO 1X-NM NODES

Actinic Review of EUV Masks: Performance Data and Status of the AIMS TM EUV System

Limitations and Challenges to Meet Moore's Law

Transcription:

ASML, Brion and Computational Lithography Neal Callan 15 October 2008, Veldhoven

Chip makers want shrink to continue (based on the average of multiple customers input) 200 Logic DRAM today NAND Flash Resolution, "Shrink" (nm) 100 80 60 50 40 30 20 02 03 04 05 06 07 08 09 10 11 12 13 14 Year of production start* *Process development 1.5 ~ 2 years in advance (updated 5/08) Slide 2

Challenge: image 22 nm features with 193 nm light waves Creating thin lines with a broad brush Slide 3

With Double Patterning shrink continues But help is needed from Brion software and ASML scanner know-how 200 Logic DRAM NAND Flash Resolution, "Shrink" (nm) 100 80 60 50 40 30 Brion and ASML DPT solutions 20 Today 02 03 04 05 06 07 08 09 10 11 12 13 14 Year of production start* *Process development 1.5 ~ 2 years in advance (updated 5/08) Slide 4

Contents 1. Computational Lithography today 2. Brion and Holistic Lithography a. Combine mask and shape of light source = Source-Mask Optimization (SMO) b. Improved mask designs -- Open standards for mask design c. The need to match scanners Slide 5

Computational Lithography starts here RET/OPC, Litho Verification, Mask Proximity Correction Lithography Illumination setting Mask making Printed wafers Metrology Brion Mask Design Scanner settings Dose & Grid corrections Source Mask Optimization Brion Litho Exploration Device pattern Computational Litho Scanner-to-pattern tuning Model predictive controller DoseMapper & GridMapper Wafer Litho Measured CD & overlay Slide 6

Contents 1. Computational Lithography today 2. Brion and Holistic Lithography a. Combine mask and shape of light source = Source-Mask Optimization (SMO) b. Improved mask designs -- Open standards for mask design c. The need to match scanners Slide 7

Combine mask and shape of light source (SMO) Optimizing source and mask complexity for best imaging Standard NOW Q1 2009 Customized Multi-pole Multi-ring Next Generation Unconstrained Pixelated method OPC with Modelbased Scattering Bars NOW New Mask Optimization Q1 2009 Unconstrained (pixelated) OPC Q1 2009 Increased Mask complexity constrained Increased DOE complexity Increased performance Increased performance Optimal 22 nm manufacturing possible solution constrained Manu- 22 nm facturing possible Manu- 22 nm facturing possible Manufacturing constrained Slide 8

Contents 1. Computational Lithography today 2. Brion and Holistic Lithography a. Combine mask and shape of light source = Source-Mask Optimization (SMO) b. Improved mask designs -- Open standards for mask design c. The need to match scanners Slide 9

Open standards for the industry Broad proliferation of ASML scanner info/models possible $1.5B ~$80M ~$40M ~$5B Synopsys Synopsys Synopsys Mentor Graphics Nikon Canon Through Brion, ASML will proliferate ASML scanner models throughout the DFM value chain via the Virtual Scanner Pack (VSP) Mentor Graphics Mentor Graphics ASML Customers who use design or comp litho tools from anyone can access ASML scanner models through the VSP Cadence Cadence ASML Brion Good for chip design software companies Magma, others ASML Brion Good for chip manufacturers Available end Q4 2008 Design OPC Verification Litho Slide 10

Optical Proximity Correction (OPC) OPC is required for advanced masks to ensure printability This is the pattern that needs to appear on the wafer without Brion software Light MASK Due to light scattering at these nanoscopic levels, the image blurs Lithography Process Pattern design after Brion software Note the changes that accentuate the pattern added by Brion software Light MASK The light scattering is compensated and the image is good Slide 11

Litho double patterning solutions (DPT) Brion s Litho DPT provides crucial solutions such as Gate-aware splitting Balanced splitting for dense layers Balanced splitting for sparse layers Slide 12

Computational lithography needs accurate modeling ASML scanner knowledge enables better image prediction ASML scanner knowledge improves modeling accuracy Accurate modeling enables low k1 RET solutions Source Mask Optimization Double Patterning Double Exposure Model based scattering bars Slide 13

Computational Lithography shifts to image-based More layers requiring increasingly sophisticated OPC ViaX MetalX Metal2 Via1 Contact Metal1 Active Poly 65 nm ViaX ViaX ViaX MetalX MetalX MetalX Metal2 Metal2 Metal2 Via1 Via1 Via1 Contact Contact Contact Metal1 Metal1 Metal1 Active Active Active Poly Poly Poly 45 nm 32 nm 22 nm 16 14 12 10 8 6 4 2 0 Normalized Computational Load At each node, the number of complex OPC layers increases Brion has the most mature image-based OPC and verification products Computational time/load is increasing dramatically with each successive node A key element of Brion s strategy is to deliver consistent cycle time despite increasing computational load Slide 14

Contents 1. Computational Lithography today 2. Brion and Holistic Lithography a. Combine mask and shape of light source = Source-Mask Optimization (SMO) b. Improved mask designs -- Open standards for mask design c. The need to match scanners Slide 15

Lithography in the future: Holistic Lithography requires a combination of Computational and Wafer lithography RET/OPC, Litho Verification, Mask Proximity Correction Lithography Illumination setting Mask making Printed wafers Metrology Brion Plus Scanner settings Dose & Grid corrections Source Mask Optimization Device pattern Computational Litho Scanner-to-pattern tuning Model predictive controller DoseMapper & GridMapper Wafer Litho Measured CD & overlay Slide 16

Process control requires match scanners Higher productivity with consistent yield Solution: 1. Measure differences between a few areas in chip per scanner Same imaging better yield Mask (Brion s OPC) Mix of machines 2. Create model of full chip differences between scanners 3. Brion software plus ASML knowledge to adjust knobs on each scanner so that they match Slide 17

Added complexity to match scanners Simple core structures no longer enough Yesterday -- Simple, core patterns were matched NAND wordline Today -- All critical patterns need to be simultaneously matched High performance SRAM Periphery Slide 18

In Summary Brion + ASML optimizes the design to the scanners Source-Mask Optimization Double Patterning Virtual Scanner Pack Brion + ASML optimizes the scanners to the designs Holistic Lithography -- matching Slide 19