MBRM12LT1G, NRVBM12LT1G, MBRM12LT3G, NRVBM12LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the has the same thermal performance as the SM while being 5% smaller in footprint area, and delivering one of the lowest height profiles, 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDs and PCMCI cards. Typical applications are C DC and DC DC converters, reverse battery protection, and ORing of multiple supply voltages and any other application where performance and size are critical. Features Low Profile Maximum Height of 1.1 mm Small Footprint Footprint rea of 8.45 mm 2 Low V F Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink ESD Ratings: Human Body Model = 3B (> 16 kv) Machine Model = C (> 4 V) EC Q11 Qualified and PPP Capable NRVB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements ll Packages are Pb Free* Mechanical Characteristics: is JEDEC Registered as D 216 Case: Molded Epoxy Epoxy Meets UL 94 V @ 25 in Weight: 16.3 mg (pproximately) Lead and Mounting Surface Temperature for Soldering Purposes: 26 C Maximum for 1 Seconds *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SCHOTTKY BRRIER RECTIFIER MPERES, 2 VOLTS CTHODE CSE 457 PLSTIC NODE MRKING DIGRM M BCF = Date Code = Device Code = Pb Free Package Device Package Shipping MBRM12LT1G NRVBM12LT1G MBRM12LT3G NRVBM12LT3G M 1 2 BCF ORDERING INFORMTION 3, / 3, / 12, / 12, / For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. Semiconductor Components Industries, LLC, 212 January, 212 Rev. 7 1 Publication Order Number: MBRM12L/D
MBRM12LT1G, NRVBM12LT1G, MBRM12LT3G, NRVBM12LT3G MXIMUM RTINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating Symbol Value Unit V RRM V RWM V R 2 V verage Rectified Forward Current (t Rated V R, T C = 135 C) Peak Repetitive Forward Current (t Rated V R, Square Wave, 1 khz, T C = 135 C) Non Repetitive Peak Surge Current (Non Repetitive peak surge current, halfwave, single phase, 6 Hz) I O I FRM 2. I FSM 5 Storage Temperature T stg 55 to 15 C Operating Junction Temperature T J 55 to 125 C Voltage Rate of Change (Rated V R, ) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERML CHRCTERISTICS Thermal Resistance, Junction to Lead (node) (Note 1) Thermal Resistance, Junction to Tab (Cathode) (Note 1) Thermal Resistance, Junction to mbient (Note 1) dv/dt 1, Characteristic Symbol Value Unit 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 1. ELECTRICL CHRCTERISTICS R tjl R tjtab R tja Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 V F V (I F = ) (I F = ) (I F = 3. ).34.45.65 35 23 277.26.415.67 Maximum Instantaneous Reverse Current (Note 2), See Figure 4 I R m (V R = 2 V) (V R = 1 V) 2. Pulse Test: Pulse Width 25 s, Duty Cycle 2%..4 25 18 V/ s C/W i F, INSTNTNEOUS FORWRD CURRENT (MPS) 1 T J = 125 C T J = 4 C.3.5.7.9 v F, INSTNTNEOUS FORWRD VOLTGE (VOLTS) I F, INSTNTNEOUS FORWRD CURRENT (MPS) 1 T J = 125 C.3.5.7.9 V F, MXIMUM INSTNTNEOUS FORWRD VOLTGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 2
MBRM12LT1G, NRVBM12LT1G, MBRM12LT3G, NRVBM12LT3G I R, REVERSE CURRENT (MPS) 1E 3 E 3 1E 6 1E 6 E 6 I R, MXIMUM REVERSE CURRENT (MPS) 1E 3 1E 3 E 3 1E 6 1E 6 5. 1 15 2 5. 1 15 2 V R, REVERSE VOLTGE (VOLTS) V R, REVERSE VOLTGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current I O, VERGE FORWRD CURRENT (MPS) 1.8 1.6 1.4 1.2.8.6.4.2 25 dc FREQ = 2 khz SQURE WVE I pk /I o = I pk /I o = 5 I pk /I o = 1 I pk /I o = 2 35 45 55 65 75 85 95 15 115 125 T L, LED TEMPERTURE ( C) Figure 5. Current Derating P FO, VERGE POWER DISSIPTION (WTTS).7.6.5.4.3.2 I pk /I o = 2 I pk /I o = 1 I pk /I o = 5 I pk /I o = SQURE WVE.2.4.6.8 1.2 1.4 1.6 I O, VERGE FORWRD CURRENT (MPS) Figure 6. Forward Power Dissipation dc C, CPCITNCE (pf) 1 1 1 V R, REVERSE VOLTGE (VOLTS) Figure 7. Capacitance T J, DERTED OPERTING TEMPERTURE ( C) 125 115 95 85 75 119 C/W 24 C/W 277.35 C/W 338 C/W R tja = 33.72 C/W 65 2. 4. 6. 8. 1 12 14 16 18 2 2. 4. 6. 8. 1 12 14 16 18 2 V R, DC REVERSE VOLTGE (VOLTS) Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of T J therefore must include forward and reverse power effects. The allowable operating T J may be calculated from the equation: T J = T Jmax r(t)(pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable T J due to reverse bias under DC conditions only and is calculated as T J = T Jmax r(t)pr, where r(t) = Rthja. For other power applications further calculations must be performed. 15 3
MBRM12LT1G, NRVBM12LT1G, MBRM12LT3G, NRVBM12LT3G R (T), TRNSIENT THERML RESISTNCE (NORMLIZED) R (T), TRNSIENT THERML RESISTNCE (NORMLIZED) 5% 2% 1% 5.% 2.%.1 % Rtjl(t) = Rtjl*r(t).1.1.1.1.1 1 1 T, TIME (s) Figure 9. Thermal Response Junction to Lead 5% 2% 1% 5.%.1 2.% Rtjl(t) = Rtjl*r(t) %.1.1.1.1.1 1 1 1, T, TIME (s) Figure 1. Thermal Response Junction to mbient 4
MBRM12LT1G, NRVBM12LT1G, MBRM12LT3G, NRVBM12LT3G PCKGE DIMENSIONS CSE 457 4 ISSUE E S C J F.8 (.3) M T B S C S NOTES: 1. DIMENSIONING ND TOLERNCING PER NSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION DOES NOT INCLUDE MOLD FLSH, PROTRUSIONS OR GTE BURRS. MOLD FLSH, PROTRUSIONS OR GTE BURRS SHLL NOT EXCEED 5 (.6) PER SIDE. K R B J H T L PIN 1 PIN 2 D.8 (.3) M T B S C S MILLIMETERS INCHES DIM MIN MX MIN MX 1.75 2.5.69.81 B 1.75 2.18.69.86 C.85 1.15.33.45 D.4.69.16.27 F.7.28.39 H -.5 + -.2 +.4 J.25.4.1 K 3.6 3.9 42 54 L.5.8.2.31 R 1.2 1.5.47.59 S.5 REF.19 REF STYLE 1: PIN 1. CTHODE 2. NODE SOLDERING FOOTPRINT*.635.25 2.67 5.762.3 2.54 1.27.5 SCLE 1:1 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. is a registered trademark of and used under a license from Microsemi Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 US Phone: 33 675 2175 or 8 344 386 Toll Free US/Canada Fax: 33 675 2176 or 8 344 3867 Toll Free US/Canada Email: orderlit@onsemi.com N. merican Technical Support: 8 282 9855 Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: 421 33 79 291 Japan Customer Focus Center Phone: 81 3 5817 15 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRM12L/D