STARPOWER SEMICONDUCTOR TM IGBT GD75HFU120C1S Molding Type Module 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as UPS and SMPS. Features Low V CE(sat) NPT IGBT technology Low switching losses 10μs short circuit capability V CE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Equivalent Circuit Schematic Typical Applications UPS Switching mode power supplies Electronic welders 2011 STARPOWER Semiconductor Ltd. 2/25/2011 1/9 Rev.D
Absolute Maximum Ratings T C =25 unless otherwise noted Symbol Description GD75HFU120C1S Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20 V I C Collector Current @ T C =25 150 A @ T C =80 75 I CM(1) Pulsed Collector Current t p =1ms 150 A I F Diode Continuous Forward Current 75 A I FM Diode Maximum Forward Current 150 A P D Maximum Power Dissipation @ T j =150 658 W T j Maximum Junction Temperature 150 T STG Storage Temperature Range -40 to +125 V ISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V Mounting Power Terminal Screw:M5 2.5 to 5.0 Torque Mounting Screw:M6 3.0 to 5.0 N.m Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Electrical Characteristics of IGBT T C =25 unless otherwise noted Off Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units V (BR)CES I CES I GES Collector-Emitter T j =25 1200 V Breakdown Voltage V CE =V CES,V GE =0V, Collector Cut-Off Current 5.0 ma T j =25 Gate-Emitter Leakage V GE =V GES,V CE =0V, 400 na Current T j =25 On Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units V GE(th) V CE(sat) Gate-Emitter Threshold I C =750μA,V CE =V GE, 4.4 5.2 6.0 V Voltage T j =25 I C =75A,V GE =15V, 3.10 3.60 Collector to Emitter T j =25 V Saturation Voltage I C =75A,V GE =15V, 3.45 T j =125 2011 STARPOWER Semiconductor Ltd. 2/25/2011 2/9 Rev.D
Switching Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units t d(on) Turn-On Delay Time 286 ns t r Rise Time 53 ns t d(off) Turn-Off Delay Time 304 ns V CC =600V,I C =75A, t f Fall Time 103 ns R G =7.5Ω,V GE =±15V, Turn-On Switching E on T j =25 4.16 mj Loss E off t d(on) Turn-Off Switching Loss 2.17 mj Turn-On Delay Time 297 ns t r Rise Time 56 ns t d(off) Turn-Off Delay Time 321 ns V CC =600V,I C =75A, t f Fall Time 136 ns R G =7.5Ω,V GE =±15V, Turn-On Switching E on T j =125 5.82 mj Loss E off C ies Turn-Off Switching Loss 3.44 mj Input Capacitance 6.40 nf C oes Output Capacitance V CE =30V,f=1MHz, 0.57 nf C res I SC Reverse Transfer V GE =0V Capacitance 0.23 nf t S C 10μs,V GE =15V, SC Data T j =125,V CC =600V, 300 A V CEM 1200V L CE Stray Inductance 30 nh R CC +EE Module Lead Resistance, T C =25 0.75 mω Terminal to Chip Electrical Characteristics of DIODE T C =25 unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V F Q r I RM E rec Diode Forward T j =25 1.78 2.18 I F =75A Voltage T j =125 1.85 V Recovered Charge T j =25 3.6 I F =75A, T j =125 7.9 μc Peak Reverse V R =600 V, T j =25 63 Recovery Current di/dt=-1550a/μs, T j =125 73 A Reverse Recovery V GE =-15V T j =25 2.21 Energy T j =125 4.48 mj 2011 STARPOWER Semiconductor Ltd. 2/25/2011 3/9 Rev.D
Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case (per IGBT) 0.19 K/W R θjc Junction-to-Case (per DIODE) 0.49 K/W R θcs Case-to-Sink (Conductive grease applied) 0.05 K/W Weight Weight of Module 150 g 2011 STARPOWER Semiconductor Ltd. 2/25/2011 4/9 Rev.D
Fig 1. IGBT Typical Output Characteristics Fig 2. IGBT Typical Transfer Characteristics Fig 3. IGBT Switching Loss vs. I C Fig 4. IGBT Switching Loss vs. R G 2011 STARPOWER Semiconductor Ltd. 2/25/2011 5/9 Rev.D
Fig 5. RBSOA Fig 6. IGBT Transient Thermal Impedance Fig 7. Diode Typical Forward Characteristics Fig 8. Diode Switching Loss vs. I F 2011 STARPOWER Semiconductor Ltd. 2/25/2011 6/9 Rev.D
Fig 9. Diode Switching Loss vs. R G Fig 10. Diode Transient Thermal Impedance 2011 STARPOWER Semiconductor Ltd. 2/25/2011 7/9 Rev.D
Package Dimension Dimensions in Millimeters 2011 STARPOWER Semiconductor Ltd. 2/25/2011 8/9 Rev.D
Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 2011 STARPOWER Semiconductor Ltd. 2/25/2011 9/9 Rev.D