12V 5A MG125W-XBN2MM RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB mounting Temperature sense included Applications AC motor control Motion/servo control Inverter and power supplies Characteristics ( max) Max. Junction Temperature 15 C op Operating Temperature -4 125 C T stg Storage Temperature -4 125 C V isol Insulation Test Voltage AC, t=1min 3 V CTI Comparative Tracking Index 25 M d Mounting Torque Recommended (M5) 2.5 5 N m Weight 3 g Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit S Collector - Emitter Voltage =25 C 12 V V GES Gate - Emitter Voltage ±2 V I C T DC Collector Current C =25 C 75 A =8 C 5 A I CM Repetitive Peak Collector Current t p =1ms 1 A P tot Dissipation Per 26 W V RRM Repetitive Reverse Voltage =25 C 12 V (AV) =25 C 75 A Average Forward Current =8 C 5 A RM Repetitive Peak Forward Current t p =1ms 1 A I 2 t =125 C, t=1ms, V R =V 68 A 2 s MG125W-XBN2MM 247 1 215 Littelfuse, Inc Revised:12/4/14
12V 5A Electrical and Thermal Specifications ( V GE(th) Gate - Emitter Threshold Voltage =V GE, I C =2.mA 5. 5.8 6.5 V (sat) Collector - Emitter I C =5A, V GE =15V, =25 C 1.7 V Saturation Voltage I C =5A, V GE =15V, =125 C 1.9 V I ICES Collector Leakage Current =12V, V GE =V, =25 C 1 ma =12V, V GE =V, =125 C 1 ma I GES Gate Leakage Current =V, V GE =±15V, =125 C -4 4 na R Gint Integrated Gate Resistor 4. Ω Q ge Gate Charge =6V, I C =5A, V GE =±15V.47 μc C ies Input Capacitance 3.6 nf C res Reverse Transfer Capacitance =25V, V GE =V, f =1MHz.16 nf t d(on) t r t d(off) t f E on E off Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time Turn - on Energy Turn - off Energy V CC =6V I C =5A R G =18Ω V GE =±15V Inductive Load =25 C 9 ns =125 C 9 ns =25 C 3 ns =125 C 5 ns =25 C 42 ns =125 C 52 ns =25 C 7 ns =125 C 9 ns =25 C 4.9 mj =125 C 6.6 mj =25 C 4. mj =125 C 4.9 mj I SC Short Circuit Current t psc 1μS, V GE =15V; =125 C, V CC =9V 2 A R thjc Junction-to-Case Thermal Resistance (Per ).48 K/W V F Forward Voltage =5A, V GE =V, =25 C 1.65 V =5A, V GE =V, =125 C 1.65 V t RR Reverse Recovery Time =5A, V R =6V 275 ns I RRM Max. Reverse Recovery Current di F /dt=12a/µs 5 A E rec Reverse Recovery Energy =125 C 4.4 mj R thjcd Junction-to-Case Thermal Resistance (Per ).78 K/W MG125W-XBN2MM 248 2 215 Littelfuse, Inc Revised:12/4/14
12V 5A -Rectifier Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit V RRM Repetitive Reverse Voltage =25 C 16 V (AV) Average Forward Current =8 C 5 A RM I 2 t Non-Repetitive Surge Forward Current =45 C, t=1ms, 5Hz 35 =45 C, t=8.3ms, 6Hz 385 =45 C, t=1ms, 5Hz 612 =45 C, t=8.3ms, 6Hz 741 A A 2 s -Rectifier Electrical and Thermal Specifications ( V F I R R thjcd Forward Voltage Reverse Leakage Current Junction-to-Case Thermal Resistance (Per ) =5A, =25 C 1.1 V =5A, =125 C 1.5 V V R =16V, =25 C 5 μa V R =16V, =125 C 1 ma.68 K/W Brake-Chopper Absolute Maximum Ratings ( Symbol Parameters Test Conditions Values Unit S Collector - Emitter Voltage =25 C 12 V V GES Gate - Emitter Voltage ±2 V I C T DC Collector Current C =25 C 55 A =8 C 4 A I CM Repetitive Peak Collector Current t p =1ms 8 A P tot Dissipation Per 195 W V RRM Repetitive Reverse Voltage =25 C 12 V (AV) =25 C 25 A Average Forward Current =8 C 15 A RM Repetitive Peak Forward Current t p =1ms 3 A I 2 t =125 C, t=1ms, V R =V 6 A 2 s MG125W-XBN2MM 249 3 215 Littelfuse, Inc Revised:12/4/14
12V 5A Brake-Chopper Electrical and Thermal Characteristics ( V GE(th) Gate - Emitter Threshold Voltage =V GE, I C =1.5mA 5. 5.8 6.5 V (sat) Collector - Emitter I C =4A, V GE =15V, =25 C 1.8 V Saturation Voltage I C =4A, V GE =15V, =125 C 2.5 V I ICES Collector Leakage Current =12V, V GE =V, =25 C.25 μa =12V, V GE =V, =125 C 2 ma I GES Gate Leakage Current =V, V GE =±15V, =125 C -4 4 na R Gint Integrated Gate Resistor 6 Ω Q ge Gate Charge =6V, I C =4A, V GE =±15V.33 μc C ies Input Capacitance 2.5 nf C res Reverse Transfer Capacitance =25V, V GE =V, f =1MHz.11 nf t d(on) t r t d(off) t f E on E off Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time Turn - on Energy Turn - off Energy V CC =6V I C =4A R G =27Ω V GE =±15V Inductive Load =25 C 9 ns =125 C 9 ns =25 C 3 ns =125 C 5 ns =25 C 42 ns =125 C 52 ns =25 C 7 ns =125 C 9 ns =25 C 4.1 mj =125 C 6. mj =25 C 3.1 mj =125 C 3.6 mj I SC Short Circuit Current t psc 1μS, V GE =15V; =125 C, V CC =9V 16 A R thjc V F Junction-to-Case Thermal Resistance (Per ) Forward Voltage.62 K/W =15A, V GE =V, =25 C 1.65 V =15A, V GE =V, =125 C 1.75 V t RR Reverse Recovery Time =15A, V R =6V 15 ns I RRM Max. Reverse Recovery Current di F /dt=-4a/µs 15 A E rec Reverse Recovery Energy =125 C 1.15 mj R thjcd Junction-to-Case Thermal Resistance (Per ) 1.55 K/W NTC Characteristics ( R 25 Resistance T c =25 C 5 KΩ B 25/5 3375 K MG125W-XBN2MM 25 4 215 Littelfuse, Inc Revised:12/4/14
12V 5A Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics 1 1 8 6 4 V GE =15V 8 6 4 V GE =19V V GE =17V V GE =15V V GE =13V V GE =11V V GE = 9V =125 C 2 2.5 1. 1.5 2. 2.5 3. V 3.5.5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. V Figure 3: Typical Transfer Characteristics Figure 4: Switching Energy vs. Gate Resistor 1 8 =2V 12 1 =6V I C=5A V GE=±15V 6 4 Eon Eoff (mj) 8 6 4 E on E off 2 2 5 6 7 8 9 1 11 V GE V 12 1 2 3 4 R G Ω Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area 2 16 =6V R G=18Ω V GE=±15V 12 1 Eon Eoff (mj) 12 8 4 E on E off 8 6 4 3 R G= 18Ω V GE=±15V 2 4 6 I C A 8 1 2 4 6 8 1 12 V 14 MG125W-XBN2MM 251 215 Littelfuse, Inc Revised:12/4/14
12V 5A Figure 7: Forward Characteristics for Inverter Figure 8: Switching Energy vs. Gate Resistort for Inverter 1 8 8. 6. =5A =6V IF (A) 6 4 Erec (mj) 4. 2 2..5 1. 1.5 2. V V F 2.5 1 2 3 4 R G Ω Figure 9: Switching Energy vs. Forward Current for Inverter Figure 1: Transient Thermal Impedance of and Inverter 8. 6. R G=18Ω =6V 1 Erec (mj) 4. thjc (K/W) Z.1 2. 2 4 6 (A) 8 1.1.1.1.1 1 1 Rectangular Pulse Duration (seconds) Figure 11: Forward Characteristics Figure 12: Typical Output Characteristics for Brake Chopper 1 8 V GE =15V 8 6 IF (A) 6 4 4 2 2.2.4.6.8 1. 1.2 1.4 1.6 V F V.5 1. 1.5 2. 2.5 3. V 3.5 MG125W-XBN2MM 252 6 215 Littelfuse, Inc Revised:12/4/14
12V 5A Figure 13: Forward Characteristics for Brake Chopper Figure 14: NTC Characteristics 3 25 1 V=25A GE =15V =6V T Vj =125 C IF (A) 2 15 1 1 R ( ) 1 T Vj =25 C R T Vj =125 C 5.4.8 1.2 1.6 V F V 2. 2.4 2.8 1 2 4 6 8 1 C 12 14 16 Circuit Diagram Part Numbering System Part Marking System MG125 W-XBN2MM PRODUCT TYPE ASSEMBLY SITE M: MODULE TYPE WAFER TYPE G: VOLTAGE RATING CIRCUIT TYPE 12: 12V XB: XB CURRENT RATING PACKAGE TYPE 5: 5A W: Package W MG125W-XBN2MM LOT NUMBER Space reserved for QR code MG125W-XBN2MM 253 7 215 Littelfuse, Inc Revised:12/4/14
12V 5A Packing Options Part Number Marking Weight Packing Mode M.O.Q MG125W-XBN2MM MG125W-XBN2MM 3g Bulk Pack 2 Dimensions-Package W Ø Dimensions (mm) MG125W-XBN2MM 254 8 215Littelfuse, Inc Revised:12/4/14