l l l l dvanced Process Technology Optimized for 4.5V-7.V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. dvanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. PRELIMINRY G PD- 9.694 IRL32 HEXFET Power MOSFET D S V DSS = 2V R DS(on) =.3Ω I D = 6 The TO-22 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 5 watts. The low thermal resistance and low package cost of the TO- 22 contribute to its wide acceptance throughout the industry. bsolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ 4.5V 6 I D @ T C = C Continuous Drain Current, V GS @ 4.5V 39 I DM Pulsed Drain Current 24 P D @T C = 25 C Power Dissipation 89 W Linear Derating Factor.7 W/ C V GS Gate-to-Source Voltage ± V V GSM Gate-to-Source Voltage 4 V (Start Up Transient, tp = µs) E S Single Pulse valanche Energy 22 mj I R valanche Current 35 E R Repetitive valanche Energy 8.9 mj dv/dt Peak Diode Recovery dv/dt ƒ 5. V/ns T J Operating Junction and -55 to + 5 T STG Storage Temperature Range C Soldering Temperature, for seconds 3 (.6mm from case ) Mounting torque, 6-32 or M3 srew lbf in (.N m) Thermal Resistance TO-22B Parameter Typ. Max. Units R θjc Junction-to-Case.4 R θcs Case-to-Sink, Flat, Greased Surface.5 C/W R θj Junction-to-mbient 62 /8/97
IRL32 Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 2 V V GS = V, I D = 25µ V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.6 V/ C Reference to 25 C, I D = m R DS(on) Static Drain-to-Source On-Resistance.5 V GS = 4.5V, I D = 37 Ω.3 V GS = 7.V, I D = 37 V GS(th) Gate Threshold Voltage.7 V V DS = V GS, I D = 25µ g fs Forward Transconductance 36 S V DS = 6V, I D = 35 I DSS Drain-to-Source Leakage Current 25 V DS = 2V, V GS = V µ 25 V DS = V, V GS = V, T J = 5 C I GSS Gate-to-Source Forward Leakage V GS = V n Gate-to-Source Reverse Leakage - V GS = -V Q g Total Gate Charge 58 I D = 35 Q gs Gate-to-Source Charge 4 nc V DS = 6V Q gd Gate-to-Drain ("Miller") Charge 2 V GS = 4.5V, See Fig. 6 t d(on) Turn-On Delay Time V DD = V t r Rise Time 3 I ns D = 35 t d(off) Turn-Off Delay Time 8 R G = 9.Ω, V GS = 4.5V t f Fall Time R D =.28Ω, Between lead, L D Internal Drain Inductance 4.5 6mm (.25in.) nh from package L S Internal Source Inductance 7.5 and center of die contact G C iss Input Capacitance 25 V GS = V C oss Output Capacitance pf V DS = 5V C rss Reverse Transfer Capacitance 36 ƒ =.MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 6 (Body Diode) showing the G I SM Pulsed Source Current integral reverse 24 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S = 37, V GS = V t rr Reverse Recovery Time 59 88 ns T J = 25 C, I F = 35 Q rr Reverse Recovery Charge 6 nc di/dt = /µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.36mH R G = 25Ω, I S = 35. ƒ I SD 35, di/dt /µs, V DD V (BR)DSS, T J 5 C Pulse width 3µs; duty cycle 2%.
IRL32 I D, Drain-to-Source Current () VGS TOP 5V V 2V 8.V V 8.V 6.V 6.V 4.V 4.V 3.V BOTTOM 3.V 2.5V BOTTOM 2.5V 2.5V I D, Drain-to-Source Current () VGS TOP 5V V 2V 8.V V 8.V 6.V 6.V 4.V 4.V 3.V BOTTOM 3.V 2.5V BOTTOM 2.5V 2.5V 2µs PULSE WIDTH T J = 25 C. 2µs PULSE WIDTH T J = 5 C. Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current () T J = 25 C T J = 5 C V DS= 5V 2µs PULSE WIDTH 2 3 4 5 6 7 V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2. I D = 6.5..5 V GS = 4.5V. -6-4 -2 2 4 6 8 2 4 6 T J, Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature
IRL32 C, Capacitance (pf) 42 36 3 24 8 2 6 VGS = V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED V GS, Gate-to-Source Voltage (V) 5 2 9 6 3 I D = 35 V DS = 6V 2 4 6 8 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current () T J = 5 C T J = 25 C V GS = V.2.8.4 2. 2.6 V SD,Source-to-Drain Voltage (V) I D, Drain Current () OPERTION IN THIS RE LIMITED BY R DS(on) us ms ms TC = 25 C TJ = 5 C Single Pulse Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating rea
IRL32 I D, Drain Current () 7 6 5 4 3 2 25 5 75 25 5 T C, Case Temperature ( C) E S, Single Pulse valanche Energy (mj) 5 4 3 2 TOP BOTTOM I D 6 22 35 25 5 75 25 5 Starting T, Junction Temperature( J C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Maximum valanche Energy Vs. Drain Current Thermal Response (Z thjc ). D =.5.2..5.2. SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc + TC...... t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL32 ( Ω ) R DS (on), Drain-to-Source On Resistance.5.4.3.2. VGS = 4.5V VGS = 7.V. 2 4 6 8 I D, Drain Current () R DS(on), Drain-to-Source On Resistance ( Ω ).2.8.6.4.2..8 2 4 6 8 V GS I D = 6, Gate-to-Source Voltage (V) Fig 2. On-Resistance Vs. Drain Current Fig 3. On-Resistance Vs. Gate Voltage
Package Outline TO-22B Outline Dimensions are shown in millimeters (inches) IRL32 2.87 (.3) 2.62 (.3).54 (.45).29 (.45) 3.78 (.49) 3.54 (.39) - - 4.69 (.85) 4.2 (.65) - B -.32 (.52).22 (.48) 5.24 (.6) 4.84 (.584) 4.9 (.555) 3.47 (.53) 2 3 4 6.47 (.255) 6. (.24).5 (.45) MIN 4.6 (.6) 3.55 (.4) LED SSIGNMENTS - GTE 2 - DR IN 3 - SOURCE 4 - DR IN 3X.4 (.55).5 (.45) 2.54 (.) 2X NOTES: 3X.93 (.37).69 (.27).36 (.4) M B M.55 (.22) 3X.46 (.8) 2.92 (.5) 2.64 (.4) DIMENSIONING & TOLERNCING PER NSI Y4.5M, 982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-22B. 2 CON TR OLLING DIMENSION : INC H 4 HETSINK & LE D MESUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO-22B EXMPLE EXMPLE : THIS : THIS N IS N IRF IRF WITH WITH SSEMBLY LOT LOT CODE CODE 9BM 9BM INTERNTIONL RECTIFIER RECTIFIER IRF IRF LOGO LOGO 9246 9246 9B 9B M M SSEMBLY LOT LOT CODE CODE PRT PRT NUMBER NUMBER DTE DTE CODE CODE (YYW (YYW W ) W ) YY YY = YER = YER WW WW = WEEK = WEEK WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 9245, Tel: (3) 322 333 EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 883 7322 IR CND: 732 Victoria Park ve., Suite 2, Markham, Ontario L3R 2Z8, Tel: (95) 475 897 IR GERMNY: Saalburgstrasse 57, 635 Bad Homburg Tel: ++ 49 672 9659 IR ITLY: Via Liguria 49, 7 Borgaro, Torino Tel: ++ 39 45 IR FR EST: K&H Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: 8 3 3983 86 IR SOUTHEST SI: 35 Outram Road, #-2 Tan Boon Liat Building, Singapore 36 Tel: 65 22 837 http://www.irf.com/ Data and specifications subject to change without notice. /97