Ordering number : ENA1C BBS P-Channel Power MOSFET 6V, 1A,.8mΩ, TO-6-L/TO-6 http://onsemi.com Features ON-resistance RDS(on)1=4.4mΩ (typ.) Input capacitance Ciss=1pF (typ.) 4V drive TO-6 Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS --6 V Gate to Source Voltage VGSS ± V Drain Current (DC) ID --1 A Drain Current (Pulse) IDP PW 1μs, duty cycle 1% --4 A Allowable Power Dissipation PD Tc= C 9 W Channel Temperature Tch 1 C Storage Temperature Tstg -- to +1 C Avalanche Energy (Single Pulse) *1 EAS 4 mj Avalanche Current * IAV --6 A Note : *1 VDD= -V, L=1μH, IAV= -6A (Fig.1) * L 1μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Drain to Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=V --6 V Zero-Gate Voltage Drain Current IDSS VDS=--6V, VGS=V --1 μa Gate to Source Leakage Current IGSS VGS=±16V, VDS=V ±1 μa Cutoff Voltage VGS(off) VDS=--1V, ID=--1mA --1. --.6 V Forward Transfer Admittance yfs VDS=--1V, ID=--A 4 9 S Static Drain to Source On-State Resistance RDS(on)1 ID=--A, VGS=--1V 4.4.8 mω RDS(on) ID=--A, VGS=--4V 6.4 9. mω Input Capacitance Ciss 1 pf Output Capacitance Coss VDS=--V, f=1mhz 1 pf Reverse Transfer Capacitance Crss 9 pf Turn-ON Delay Time td(on) 9 ns Rise Time tr 1 ns See Fig. Turn-OFF Delay Time td(off) 8 ns Fall Time tf 8 ns Total Gate Charge Qg 8 nc Gate to Source Charge Qgs VDS=--V, VGS=--1V, ID=--1A nc Gate to Drain Miller Charge Qgd nc Diode Forward Voltage VSD IS=--1A, VGS=V --1. --1. V ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 1 September, 1 9111 TKIM TC-96/661 TKIM/11 TKIM TC-684/ No. A1-1/6 N18QA MSIM TC-18
BBS -- --18 --14 --16 --1 --1 --8 --6 --4 -- --1V --8V ID -- VDS --6V Tc= C --4V VGS= --V -- --18 --14 --16 --1 --1 --8 --6 --4 -- VDS= --1V ID -- VGS C -- C Tc= C Tc= -- C C C Static Drain to Source On-State Resistance, R DS (on) -- mω 18 16 14 1 1 8 6 4 --. --.4 --.6 --.8 --1. --1. --1.4 --1.6 --1.8 --. Drain to Source Voltage, V DS -- V IT141 RDS(on) -- VGS ID= --A Single pulse Tc= C C -- C Static Drain to Source On-State Resistance, R DS (on) -- mω 1 1 8 6 4 --. --1. --1. --. --. --. --. --4. --4. --. Gate to Source Voltage, V GS -- V IT1414 RDS(on) -- Tc Single pulse V GS = --4V, ID = --A VGS= --1V, ID= --A Forward Transfer Admittance, yfs -- S Switching Time, SW Time -- ns 1 1 1. --.1 --1. 1 1 -- -- --4 -- --6 -- --8 --9 --1 V DD = --V V GS = --1V Gate to Source Voltage, V GS -- V IT141 Case Temperature, Tc -- C yfs -- ID IS -- VSD --1K V DS = --1V V GS =V Single pulse Tc= -- C C C --1 --1 SW Time -- ID td(off) tf tr t d (on) IT141 --.1 --1. --1 --1 IT1419 Source Current, I S -- A Ciss, Coss, Crss -- pf --1 --1 --1. --.1 --.1 --.1 1 1 -- -- 1 1 1 Tc= C C -- C IT1416 --. --.4 --.6 --.8 --1. --1. Diode Forward Voltage, V SD -- V IT1199 Ciss, Coss, Crss -- VDS f=1mhz Ciss Coss Crss -- --1 --1 -- -- -- Drain to Source Voltage, V DS -- V IT1418 No. A1-/6
BBS Gate to Source Voltage, V GS -- V VGS -- Qg --1 VDS = --V --9 I D = --1A --8 -- --6 -- --4 -- -- --1 1 1 Total Gate Charge, Qg -- nc IT14181 PD -- Tc 1 --1 I DP = --4A I D = --1A --1 --1 Operation in this area is limited by R DS (on). A S O 1ms 1ms DC operation PW 1μs 1ms 1μs 1μs --1. Tc= C --.1 Single pulse --.1 --1. --1 --1 Drain to Source Voltage, V DS -- V IT1418 1 EAS -- Ta Allowable Power Dissipation, P D -- W 9 8 6 4 1 Avalanche Energy derating factor -- % 1 8 6 4 4 6 8 1 1 14 16 Case Temperature, Tc -- C IT1418 1 1 1 1 Ambient Temperature, Ta -- C IT14184 No. A1-/6
BBS Package Dimensions BBS-DL-1E DPAK/TO-6-L CASE 418AP ISSUE O Unit : mm 1: Gate : Drain : Source 4: Drain Land Pattern Example Packing Type: DL Electrical Connection, 4 DL 1 No. A1-4/6
BBS Package Dimensions BBS-TL-1E Unit : mm 1: Gate : Drain : Source 4: Drain Land Pattern Example Packing Type: TL Electrical Connection, 4 TL 1 No. A1-/6
BBS Ordering & Package Information Device Package Shipping memo BBS-DL-1E BBS-TL-1E TO-6-L SC-8, TO-6 TO-6 8 pcs./reel Pb-Free Marking BS LOT No. Fig.1 Unclamped Inductive Switching Test Circuit Fig. Switching Time Test Circuit V --1V Ω Ω RG G D S L BBS VDD V --1V VIN PW=1μs D.C. 1% VIN G VDD= --V D ID= --A RL=.6Ω VOUT P.G Ω S BBS Note on usage : Since the BBS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1-6/6