HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application Lighting Hard Switching PWM Server Power Supply Charger Key Parameters Parameter Value Unit BS @T j,max 750 V I D 10 A R DS(on), max 0.55 Ω Qg, Typ 12 nc Package & Internal Circuit G D S I 2 -PAK July 2018 Absolute Maximum Ratings T J =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 700 V Gate-Source Voltage ±30 V I D Drain Current Continuous (T C = 25 ) 10.0 A Drain Current Continuous (T C = 100 ) 6.3 A I DM Drain Current Pulsed (Note 1) 30.0 A E AS Single Pulsed Avalanche Energy (Note 2) 190 mj dv/dt MOSFET dv/dt ruggedness, =0 480V 50 V/ns dv/dt Reverse diode dv/dt, =0 480V, I DS I D 15 V/ns P D Power Dissipation 83 W T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case -- 1.5 R θja Junction-to-Ambient -- 62.5 300 /W
Electrical Characteristics T J =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, I D = 250 μa 2.5 -- 4.5 V R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 μa 700 -- -- V I DSS Static Drain-Source On-Resistance Zero Gate Voltage Drain Current = 700 V, = 0 V -- -- 1 μa = 560 V, T J = 125 -- -- 100 μa I GSS Gate-Body Leakage Current = ±30 V, = 0 V -- -- ±100 na Dynamic Characteristics = 10 V, I D = 5 A -- 0.41 0.55 Ω C iss Input Capacitance -- 715 -- pf C oss Output Capacitance = 50 V, = 0 V, f = 1.0 MHz -- 51 -- pf C rss Reverse Transfer Capacitance -- 2.3 -- pf Switching Characteristics t d(on) Turn-On Time -- 31 -- ns t r Turn-On Rise Time = 350 V, I D = 10 A, -- 19 -- ns t d(off) Turn-Off Delay Time R G = 25 Ω -- 40 -- ns t f Turn-Off Fall Time -- 16 -- ns Q g Total Gate Charge -- 12 16 nc Q gs Gate-Source Charge = 560 V, I D = 10 A = 10 V -- 4.8 -- nc Q gd Gate-Drain Charge -- 3.0 -- nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 10 I SM Pulsed Source-Drain Diode Forward Current -- -- 30 V SD Source-Drain Diode Forward Voltage I S = 10 A, = 0 V -- -- 1.4 V trr Reverse Recovery Time I S = 5 A, V R = 400 V -- 213 -- ns Qrr Reverse Recovery Charge di F /dt = 100 A/μs -- 2.0 -- μc Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS =3.0A, =50V, R G =25Ω, Starting T J =25 C 3. Pulse Test : Pulse Width 300μs, Duty Cycle 2% A
Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (continued) 10 2 Figure 7. Breakdown Voltage Variation vs Temperature Operation in This Area is Limited by R DS(on) Figure 8. On-Resistance Variation vs Temperature I D, Drain Current [A] 10 0 10-2 Notes : 1. T C = 25 o C 2. T J(Max) = 150 o C 3. Single Pulse 10-1 10 0 10 1 10 2 10 3, Drain-Source Voltage [V] 10 µs 100 µs 1 ms 10 ms DC Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 1 Z θjc (t), Thermal Response 10 0 10-1 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse Notes : 1. Z θjc (t) = 1.5 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θjc (t) P DM 10-5 10-4 10-3 10-2 10-1 t 1, Square Wave Pulse Duration [sec] t 1 t 2 Figure 11. Transient Thermal Response Curve
12V 200nF 3mA 50KΩ 300nF Fig 12. Gate Charge Test Circuit & Waveform Same Type as Fig 13. Resistive Switching Test Circuit & Waveforms R L Q gs 90% Q g Q gd Charge R G ( 0.5 rated ) V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- 1 L L I 2 2 AS BS -------------------- BS -- I D BS I AS R G I D (t) (t) t p Time
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms R G I S Driver + _ Same Type as L dv/dt controlled by RG I S controlled by pulse period ( Driver ) D = Gate Pulse Width -------------------------- Gate Pulse Period I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension I 2- PAK (TO-262)