STARPOWER SEMICONDUCTOR TM IGBT Preliminary Molding Type Module 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features High short circuit capability, self limiting to 6*I C 10μs short circuit capability V CE(sat) with positive temperature coefficient Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Equivalent Circuit Schematic Typical Applications AC inverter drives Switching mode power supplies Electronic welders Absolute Maximum Ratings T C =25 unless otherwise noted Symbol Description Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20V V 2009 STARPOWER Semiconductor Ltd. 8/12/2008 1/8 Preliminary
I C Symbol Description Units Collector Current @ T C =25 295 A @ T C =80 200 I CM(1) Pulsed Collector Current t p =1ms 400 A I F Diode Continuous Forward Current 200 A I FM Diode Maximum Forward Current t p =1ms 400 A P D Maximum power Dissipation @ T j =150 1050 W T SC Short Circuit Withstand Time @ T j =125 10 μs T j Operating Junction Temperature -40 to +150 T STG Storage Temperature Range -40 to +125 I 2 t-value, Diode V R =0V, t=10ms, T j =125 7800 A 2 s V ISO Isolation Voltage RMS, f=50hz, t=1min 2500 V Mounting Torque Power Terminal Screw:M6 2.5 to 5.0 N.m Mounting Screw:M6 3.0 to 6.0 N.m Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Electrical Characteristics of IGBT T C =25 unless otherwise noted Off Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units BV CES I CES I GES Collector-Emitter T j =25 1200 V Breakdown Voltage V CE =V CES,V GE =0V, Collector Cut-Off Current 5.0 ma T j =25 Gate-Emitter Leakage V GE =V GES,V CE =0V, 400 na Current T j =25 On Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units V GE(th) V CE(sat) Gate-Emitter Threshold I C =8.0mA,V CE =V GE, 5.0 5.8 6.5 V Voltage T j =25 I C =200A,V GE =15V, 1.70 2.15 Collector to Emitter T j =25 V Saturation Voltage I C =200A,V GE =15V, 1.90 T j =125 Switching Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units t d(on) Turn-On Delay Time 250 ns V CC =600V,I C =200A, t r Rise Time 90 ns R G =3.6Ω, V GE =±15V, t d(off) Turn-Off Delay Time 550 ns T j =25 Fall Time 130 ns t f 2009 STARPOWER Semiconductor Ltd. 8/12/2008 2/8 Preliminary
t d(on) Turn-On Delay Time 300 ns t r Rise Time 100 ns t d(off) Turn-Off Delay Time 650 ns V CC =600V,I C =200A, t f Fall Time 180 ns R G =3.6Ω,V GE =±15V, Turn-On Switching E on T j =125 15 mj Loss E off Turn-Off Switching 25 mj Loss C ies Input Capacitance 14.0 nf C oes Output Capacitance V CE =25V, f=1mhz, 0.60 nf C res I SC Reverse Transfer V GE =0V Capacitance 0.50 nf t S C 10μs, V GE =15V, SC Data T j =125, V CC =900V, 800 A V CEM 1200V Q g Gate charge V GE =-15V 15V 1.90 μc R Gint Internal gate resistance 3.8 Ω L CE Stray inductance 20 nh Module lead R CC +EE resistance, terminal to T C =25 0.35 mω chip Electrical Characteristics of DIODE T C =25 unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units V F Q r I RM E rec Diode Forward T j =25 1.65 2.15 I F =200A V Voltage T j =125 1.65 Diode Reverse T j =25 20.0 μc Recovery Charge T j =125 36.0 I F =200A, Diode Peak T j =25 150 V R =600V, Reverse Recovery A di/dt=-3000a/μs, T j =125 190 Current V GE =-15V Reverse Recovery T j =25 9.0 mj Energy T j =125 17.0 Thermal Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case (IGBT Part, per 1/2 Module) 0.12 /W R θjc Junction-to-Case (DIODE Part, per 1/2 Module) 0.20 /W R θcs Case-to-Sink (Conductive grease applied) 0.035 /W Weight Weight of Module 300 g 2009 STARPOWER Semiconductor Ltd. 8/12/2008 3/8 Preliminary
Fig 1. IGBT Typical Output Characteristics Fig 2. IGBT Typical Transfer Characteristics Fig 3. IGBT Switching Loss vs Collector Current Fig 4. IGBT Switching Loss vs Gate Resistor 2009 STARPOWER Semiconductor Ltd. 8/12/2008 4/8 Preliminary
Fig 5. IGBT Transient thermal impedance Fig 6. RBSOA Fig 7. Forward characteristics of Diode Fig 8. Diode Switching Loss vs Collector Current 2009 STARPOWER Semiconductor Ltd. 8/12/2008 5/8 Preliminary
Fig9. Diode Switching Loss vs Gate Resistor Fig 10. Diode Transient thermal impedance 2009 STARPOWER Semiconductor Ltd. 8/12/2008 6/8 Preliminary
Package Dimension Dimensions in Millimeters 2009 STARPOWER Semiconductor Ltd. 8/12/2008 7/8 Preliminary
Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 2009 STARPOWER Semiconductor Ltd. 8/12/2008 8/8 Preliminary