IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc= C unless otherwise specified) Items Symbols Conditions Maximum ratings Units CollectorEmitter voltage VCES 12 V GateEmitter voltage VGES ±2 V Ic Continuous Tc= C Collector current Icp 1ms Tc=8 C Ic A Ic pulse 1ms Collector power dissipation Pc 1 device 28 W CollectorEmitter voltage VCES 12 V GateEmitter voltage VGES ±2 V Collector current IC Continuous Tc=8 C 35 ICP 1ms Tc=8 C 7 A Collector power dissipation PC 1 device 21 W Repetitive peak reverse voltage (Diode) V RRM 12 V Repetitive peak reverse voltage V RRM 16 V Average output current IO Hz/6Hz, sine wave A Surge current (NonRepetitive) IFSM 1ms, Tj=1 C 36 A I 2 t (NonRepetitive) I 2 t half sine wave 648 A 2 s Junction temperature Tj Inverter, Brake 1 Converter 1 Operating junci temperature Inverter, Brake 1 Tjop (under switching conditions) Converter 1 C Case temperature Tc 1 Storage temperature Tstg 4 to +1 between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) AC : 1min. 2 VAC Screw torque Mounting (*3) M5 3.5 N m Inverter Brake Converter Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.53.5 Nm (M5) 1 1264c MARCH 214
Elecical characteristics (at Tj= C unless otherwise specified) Items Symbols Conditions Inverter Characteristics min. typ. max. Zero gate voltage collector current ICES VGE = V, VCE = 12V 1. ma GateEmitter leakage current IGES VGE = V, VGE = ±2V 2 na GateEmitter threshold voltage VGE (th) VCE = 2V, IC = ma 6. 6.5 7. V CollectorEmitter saturation voltage VCE (sat) (terminal) VCE (sat) (chip) VGE = 15V IC = A VGE = 15V IC = A Tj= C 2.15 2.6 Tj=1 C 2. Tj=1 C 2.55 Tj= C 1.85 2.3 Tj=1 C 2.2 Tj=1 C 2. Internal gate resistance Rg(int) 4 Ω Input capacitance Cies VCE = 1V, VGE = V, f = 1MHz 4.2 nf Turnon time Turnoff time Forward on voltage.39 1.2 (i) VCC = 6V IC = A VGE = +15 / 15V RG = 15Ω.9.3.53.6 1. tf.6.3 VF (terminal) VF (chip) IF = A IF = A Tj= C 2.2 2.65 Tj=1 C 2.45 Tj=1 C 2.4 Tj= C 1.9 2.35 Tj=1 C 2.15 Tj=1 C 2.1 Reverse recovery time r IF = A.35 µs Zero gate voltage collector current ICES VGE = V VCE = 12V Units V µs 1. ma V Brake Converter Thermistor GateEmitter leakage current CollectorEmitter saturation voltage IGES VCE (sat) (terminal) VCE (sat) (chip) VCE = V VGE = +2 / 2V VGE = 15V IC = 35A VGE = 15V IC = 35A 2 na Tj= C 2.1 2.55 Tj=1 C 2.45 Tj=1 C 2. Tj= C 1.85 2.3 Tj=1 C 2.2 Tj=1 C 2. Internal gate resistance Rg(int) Ω Turnon time Turnoff time tf VCE = 6V IC = 35A VGE = +15 / 15V RG = 27Ω.39.9.53.6 1.2.6 1..3 Reverse current IRRM VR = 12V 1. ma Forward on voltage VFM (chip) IF = A terminal 1.65 2.1 chip 1.35 Reverse current IRRM VR = 16V 1. ma Resistance R T = C T = C 465 495 52 B value B T = / C 335 33 34 K V µs V Ω Thermal resistance characteristics Items Symbols Conditions Characteristics min. typ. max. Inverter IGBT.54 Thermal resistance (1device) Rth(jc) Inverter FWD.91 Brake IGBT.72 Converter Diode.54 Contact thermal resistance (1device) (*4) Rth(cf) with Thermal Compound.5 Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Units C/W 2
Characteristics (Representative) Collector current vs. CollectorEmitter voltage (typ.) Tj= o C / chip Collector current vs. CollectorEmitter voltage (typ.) Tj= 1 o C / chip V GE =2V 15V 12V V GE =2V 15V 12V 1V 1V 8V 8V 1 2 3 4 5 1 2 3 4 5 CollectorEmitter voltage: V CE [V] CollectorEmitter voltage: V CE [V] Collector current vs. CollectorEmitter voltage (typ.) V GE =15V / chip CollectorEmitter voltage vs. GateEmitter voltage (typ.) Tj= o C / chip 8 Tj= C Tj=1 C Tj=1 C C o l l e c t o r E m i t t e r v o l t a g e : V C E [ V ] 6 4 2 Ic=A Ic=A Ic=A 1 2 3 4 5 Collector current: I C [A] 5 1 15 2 Gate Emitter voltage: V GE [V] Capacitance vs. CollectorEmitter voltage (typ.) V GE =V, f= 1MHz, Tj= o C Dynamic gate charge (typ.) Vcc=6V, Ic=A,Tj= C C a p a c i t a n c e : C i e s, C o e s, C r e s [ n F ] 1. 1..1. Cies Cres Coes Collector Emitter voltage: V CE [2V/div] Gate Emitter voltage: V GE [5V/div] V CE V GE 1 2 3 Collector Emitter voltage: V CE [V] Gate charge: Qg [nc] 3
Switching time :,,, tf [ nsec ] Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=15Ω, Tj= 1 C tf 1 1 Collector current: IC [A] Switching time :,,, tf [ nsec ] Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=15Ω, Tj= 1 C tf 1 1 Collector current: IC [A] Switching time vs. gate resistance (typ.) Vcc=6V, Ic=A, VGE=±15V, Tj= 1 C Switching loss vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=15Ω Switching time :,,, tf [ nsec ] tf 1 1 Switching loss : Eon, Eoff, Err [mj/pulse ] 15 1 5 Eon(1 C) Eon(1 C) Eoff(1 C) Eoff(1 C) Err(1 C) Err(1 C) 1 1 Gate resistance : Rg [Ω] Collector current: IC [A] Switching loss vs. gate resistance (typ.) Vcc=6V, Ic=A, VGE=±15V Reverse bias safe operating area (max.) +VGE=15V,VGE <= 15V, RG >= 15Ω,Tj = 1 C Switching loss : Eon, Eoff, Err [mj/pulse ] 1 Eon(1 C) 8 Eon(1 C) 6 Eoff(1 C) Eoff(1 C) 4 Err(1 C) Err(1 C) 2 1 Collector current: Ic [A] 1 RBSOA (Repetitive pulse) 4 8 12 Gate resistance : Rg [Ω] 4 CollectorEmitter voltage : V CE [V] (Main terminals)
Forward current vs. forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=6V, VGE=±15V, Rg=15Ω Forward current : IF [A] 8 6 4 2 Tj= o C Tj=1 o C Tj=1 o C 1 2 3 4 Reverse recovery current : Irr [ A ] Reverse recovery time : r [ nsec ] 1 r(1 C) r(1 C) Irr(1 C) Irr(1 C) 1 1 Forward on voltage : V F [V] Forward current : I F [A] [ Converter ] Forward current vs. forward on voltage (typ.) chip Tj= C Tj=1 C Forward current : IF [A] 1 2 3 4 Forward on voltage : V FM [V] Transient thermal resistance (max.) [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(jc) [ C/W ] 1. 1..1 IGBT[Brake].1.1.1. 1. Pulse width : Pw [sec] FWD[Inverter] IGBT[Inverter] Conv. Diode n 1 2 3 4 n [sec].23.31.598.78 r n IGBT.5792.14685.2746.12777 [ C/W] FWD.9761.24747.3496.21532 BIGBT.7723.1958.27661.1736 Conv.5792.14685.2746.12777 Resistance : R [kω] 1 1.1 6 4 2 2 4 6 8 12 14 16 18 Temperature [ C ] 5
Collector current vs. CollectorEmitter voltage (typ.) Tj= o C / chip Collector current vs. CollectorEmitter voltage (typ.) Tj= 1 o C / chip 7 6 V GE=2V 15V 12V 7 6 V GE =2V 15V 4 3 2 1 1V 8V 4 3 2 1 12V 1V 8V 1 2 3 4 5 1 2 3 4 5 CollectorEmitter voltage: V CE [V] CollectorEmitter voltage: V CE [V] Collector current vs. CollectorEmitter voltage (typ.) VGE=15V / chip CollectorEmitter voltage vs. GateEmitter voltage (typ.) Tj= o C / chip 7 6 4 3 2 1 Tj= C Tj=1 C Tj=1 C C o l l e c t o r E m i t t e r v o l t a g e : V C E [ V ] 8 6 4 2 Ic=7A Ic=35A Ic=18A 1 2 3 4 5 CollectorEmitter voltage: V CE [V] 5 1 15 2 Gate Emitter voltage: V GE [V] Capacitance vs. CollectorEmitter voltage (typ.) V GE =V, f= 1MHz, Tj= o C Dynamic gate charge (typ.) Vcc=6V, Ic=35A,Tj= C C a p a c i t a n c e : C i e s, C o e s, C r e s [ n F ] 1. 1..1. Cies Cres Coes 1 2 3 Collector Emitter voltage: V CE [2V/div] Gate Emitter voltage: V GE [5V/div] 4 V CE V GE 4 Collector Emitter voltage: V CE [V] Gate charge: Qg [nc] 6
Outline Drawings (Unit: mm) shows theoretical dimension. ( ) shows reference dimension. Section AA Weight: 2g (typ.) Equivalent Circuit [ Converter ] [ Brake] [ Thermistor ] 7
WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and suctures as of March 214. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, ade secret or other intellectual property right owned by Fuji Elecic Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Elecic Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Elecic Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Elecic semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products inoduced in this Catalog are intended for use in the following eleconic and elecical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Elecical home appliances Personal equipment Indusial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Elecic Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Trafficsignal conol equipment Gas leakage detectors with an autoshutoff feature Emergency equipment for responding to disasters and antiburglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring sict reliability such as the following and equivalents to sategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear conol equipment Submarine repeater equipment 7. Copyright 1996214 by Fuji Elecic Device Technology Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Elecic Device Technology Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Elecic Device Technology Co., Ltd. or its sales agents before using the product. Neither Fuji Elecic Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with insuctions set forth herein. 8