2MBI150HJ Power Module (V series) 1200V / 150A / 2-in-1 package G1 E1 C2E1. IGBT Modules

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Power Module (V series) 1V / 15A / 2-in-1 package Features High speed switching Voltage drive Low Inductance module structure Applications Soft-switching Application Industrial machines,such as Welding machines Outline drawing ( Unit : mm ) Weight: 37g (typ.) Equivalent Circuit C1 G1 E1 C2E1 G2 E2 E2 1

Absolute Maximum Ratings (at Tc= 25 C unless otherwise specified) Collector-Emitter voltage Gate-Emitter voltage Items Symbols Conditions Maximum Ratings Units V CES 1 V V GES ±2 V Tc=6 C 15 Continuous Tc=25 C 24 Collector current I C pulse 1ms -I C -I C pulse 1ms 8 Collector power dissipation P C 1 device 925 Junction temperature T j 15 Case temperature T c 125 Storage temperature T stg -4 ~ 125 Isolation between terminal and copper base voltage (*1) V iso AC: 1min. 25 Screw Mounting (*2) - 6. Torque Terminals (*3) - 5. (*1) All terminals should be connected together during the test. (*2) Recommendable Value : 3.-6. Nm (M5 or M6) (*3) Recommendable Value : 2.5-5. Nm (M6) I C A W C VAC N m 2

Electrical characteristics (at Tj= 25 C unless otherwise specified) Items Symbols Conditions Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage I CES Characteristics min. typ. max. VGE=V, VCE=1V - - 4. Units I GES VCE=V, VGE=±2V - - 8 na V GE(th) VCE=2V, Ic=15mA 5.7 6.2 6.7 V V CE(sat) (terminal) V CE(sat) VGE=15V, Ic=15A T j=25 o C - 3.4 3.7-4.2 - VGE=15V, Ic=15A T j=25 o C - 3.2 3.5-4. - (chip) Internal gate R G(int) - - 1. - Ω Input capacitance C ies V CE =1V, V GE =V, ƒ=1mhz - 18. - nf t on - 25 - Turn-on time t r Vcc= 6V I C = 15A - 18 - t r(i) V GE = ±15V R G = 6.8Ω - 4 - nsec Turn-off time t T 125 o off j = C L s = 3nH - - tf - 5 - Forward on voltage V F T VGE=V, IF=A j =25 o C - 1.85 2.3 (terminal) - 2. - V T VGE=V, IF=A j =25 o F C - 1.7 2.15 (chip) - 1.85 - V Reverse recovery time t rr IF=15A - 13 - nsec ma V 5. Thermal resistance characteristics Characteristics Items Symbols Conditions min. typ. max. Thermal resistance IGBT - -.135 R (1device) th(j-c) FWD - -. Contact thermal R resistance th(c-f) with Thermal Compound -.25 - (*1) This is the value which is defined mounting on the additional cooling fin with thermal compound. Units C/W 3

Capacitance: C ies, C oes, C res [nf] *** Gate-Emitter voltage: V GE [V] Collector Current: I C [A] Collector-Emitter Voltage: V CE [V] Collector current vs. Collector-Emitter voltage T j = 25 o C / chip Collector current vs. Collector-Emitter voltage (typ.) T j = 125 o C / chip V GE =2V 15V 12V V GE = 2V 15V 12V 1V 1V 8V 8V 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 Collector current vs. Collector-Emitter voltage V GE = 15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage T j = 25 o C / chip 1 8 6 4 I C =A 2 I C =15A I C =75A 1 2 3 4 5 6 Collector-Emitter Voltage: V CE [V] 5 1 15 2 25 Gate-Emitter Voltage: V GE [V] Capacitance vs. Collector-Emitter Voltage Dynamic Gate Charge (typ.) V GE = V, ƒ= 1MHz, T j = 25 o C Vcc=6V, Ic=15A, Tj= 25 C 2 8 7 1 C ies 15 V CE 6 5 1 1 C oes 5 V GE C res.1 5 1 15 2 25 3 Gate charge: Qg [nc] 4

Switching loss: E on, E off, E rr [mj/pulse] Switching time: t on, t r, t off, t f [nsec] Switching loss: E on, E off, E rr [mj/pulse] Switching time: t on, t r, t off, t f [nsec] Switching time: t on, t r, t off, t f [nsec] Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=6.8Ω, Tj=25 C Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=6.8Ω, Tj=125 C t off t off t on t on t r t r t f t f 1 1 Collector current: Ic [A] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=6V, Ic=15A, VGE=±15V, Tj=125 C Vcc=6V, VGE=±15V, Rg=6.8Ω, Tj=25, 125 C t on t off t r 4 35 3 25 2 E on 15 E off t f 1 5 E rr 1 1 1 Gate resistance: R G [Ω] Collector current: Ic [A] 7 6 Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) Vcc=6V, Ic=15A, VGE=±15V, Tj=25, 125 C +VGE=15V, -VGE=15V, Rg=6.8Ω, Tj=125 C E on 35 5 4 3 2 1 E off E rr 25 15 5 1 1 Gate resistance: R G [Ω] 5 8 1 16 (Main terminals)

Thermal resistance: R th(j-c) [ o C/W] Reverse recovery current: I rr [A] Forward current: I F [A] Reverse recovery current: I rr [A] Reverse recovery time: t rr [nsec] 5 Forward current vs. Forward voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=6V, VGE=±15V, Rg=6.8Ω, Tj=125 C I rr t rr 1 2 3 Forward on voltage: V F [V] 1 Forward current: I F [A] Transient thermal resistance (max.) FWD safe operating area (max.) T j = 125 o C 1 35 FWD.1 IGBT 25 Pmax=21kW.1 Zth 4 rn n1 1 e.1.1.1.1 1 Pulse Width : P w [sec] t n n 1 2 3 4 n [sec].23.31.598.78 r n IGBT.343.87.1229.757 [ C/W] FWD.59.1496.2113.131 15 5 8 1 16 Collector-Emitter voltage: VCE [V] (Main terminals) 6

Warnings 1. This Catalog contains the product specifications, characteristics, data, materials, and structures6/214 The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Traffic-signal control equipment Gas leakage detectors with an auto-shut-off feature Emergency equipment for responding to disasters and anti-burglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright c1996-19 by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein. 7