HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016 Parameter Value Unit BS 650 V I D 4 A R DS(on), Typ 3 Ω Qg, Typ 8.5 nc HFP4N65F TO-220 HFS4N65F TO-220F Symbol G D S Absolute Maximum Ratings G D S T C =25 unless otherwise specified Symbol Parameter TO-220 TO-220F Unit S Drain-Source Voltage 650 V I D Drain Current - Continuous (T C = 25 ) 4.0 4.0 * A Drain Current - Continuous (T C = 100 ) 2.5 2.5 * A I DM Drain Current - Pulsed (Note 1) 16 16 * A V GS Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 70 mj I AR Avalanche Current (Note 1) 4.0 A E AR Repetitive Avalanche Energy (Note 1) 11 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T P C = 25 ) 110 35 W D - Derate above 25 0.88 0.28 W/ T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter TO-220 TO-220F Unit R θjc Thermal Resistance, Junction-to-Case, Max. 1.15 3.6 /W R θjs Thermal Resistance, Case-to-Sink, Typ. 0.5 -- /W R θja Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 /W
Electrical Characteristics T J =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Unit On Characteristics V GS Gate Threshold Voltage = V GS, I D = 250 μa 2.0 -- 4.0 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, I D = 2 A -- 3.0 3.8 Ω g FS Forward Transconductance = 30 V, I D = 2 A -- 2.2 -- S Off Characteristics BS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 μa 650 -- -- V I DSS Zero Gate Voltage Drain Current = 650 V, V GS = 0 -- -- 10 μa = 520 V, T C = 125 -- -- 100 μa I GSS Gate-Body Leakage Current V GS = ±30 V, = 0 V -- -- ±100 na Dynamic Characteristics C iss Input Capacitance -- 380 500 pf C oss Output Capacitance = 25 V, V GS = 0 V, f = 1.0 MHz -- 45 60 pf C rss Reverse Transfer Capacitance -- 6.5 8.5 pf Switching Characteristics t d(on) Turn-On Time -- 19 48 ns t r t d(off) Turn-On Rise Time Turn-Off Delay Time = 325 V, I D = 4 A, R G = 25 Ω (Note 4,5) -- -- 19 35 48 80 ns ns t f Turn-Off Fall Time -- 22 54 ns Q g( Total Gate Charge = 520 V, I D = 4 A, -- 8.5 11 nc Q gs Gate-Source Charge V GS = 10 V -- 2.1 -- nc Q gd Gate-Drain Charge (Note 4,5) -- 2.8 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 4 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 16 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 4 A -- -- 1.4 V trr Reverse Recovery Time V GS = 0 V, I S = 4 A -- 240 -- ns Qrr Reverse Recovery Charge di F /dt = 100 A/μs -- 1.4 -- μc Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=8mH, I AS =4A, =50V, R G =25Ω, Starting T J =25 C 3. I SD 4A, di/dt 200A/μs, BS, Starting T J =25 C 4. Pulse Test : Pulse Width 300μs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature
Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-1. Maximum Safe Operating Area for TO-220 Figure 9-2. Maximum Safe Operating Area for TO-220F Figure 10. Maximum Drain Current vs Case Temperature
Typical Characteristics (continued) P DM t 1 t 2 Figure 11-1. Transient Thermal Response Curve for TO-220 P DM t 1 t 2 Figure 11-2. Transient Thermal Response Curve for TO-220F
12V 200nF 3mA 50KΩ V GS 300nF Fig 12. Gate Charge Test Circuit & Waveform Same Type as DUT DUT V GS 10V Q gs Q g Q gd Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) 10V DUT V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- 1 L L I 2 2 AS BS -------------------- BS -- I D BS I AS R G I D (t) 10V DUT (t) t p Time
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I S _ L Driver R G Same Type as DUT V GS dv/dt controlled by RG I S controlled by pulse period V GS ( Driver ) D = Gate Pulse Width -------------------------- Gate Pulse Period 10V I S ( DUT ) I FM, Body Diode Forward Current di/dt I RM ( DUT ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension 9.90±0.20 TO-220 φ3.60±0.20 4.50±0.20 1.30±0.20 13.08±0.20 3.02±0.20 15.70±0.20 2.80±0.20 9.19±0.20 6.50±0.20 1.27±0.20 1.52±0.20 2.40±0.20 0.80±0.20 0.50±0.20
Package Dimension 15.87±0.20 3.30±0.20 TO-220F 10.16±0.20 4.70±0.20 2.54±0.20 φ3.18±0.20 12.42±0.20 6.68±0.20 0.70±0.20 Pin hole 2.76±0.20 1.47max 9.75±0.20 0.80±0.20 10.16±0.20 φ3.18±0.20 4.70±0.20 2.54±0.20 0.70±0.20 15.87±0.20 3.30±0.20 12.42±0.20 6.68±0.20 0.50±0.20 TO-220F-FM(Full Mold) 2.76±0.20 1.47max 9.75±0.20 0.80±0.20 0.50±0.20