Features High ruggedness Low R DS(ON) (Typ 10mΩ)@V GS =4.5V Low R DS(ON) (Typ 8.2mΩ)@V GS =10V Low Gate Charge (Typ 48nC) Improved dv/dt Capability 100% Avalanche Tested Application: Electronic Ballast, Motor Control Synchronous Rectification, Inverter General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Absolute maximum ratings Symbol Parameter Value Unit S Drain to source voltage 60 V I Continuous drain current (@T C =25 o C) 100* A D Continuous drain current (@T C =100 o C) 63* A I DM Drain current pulsed (note 1) 400 A V GS Gate to source voltage ± 20 V E AS Single pulsed avalanche energy (note 2) 122 mj E AR Repetitive avalanche energy (note 1) 12 mj dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation (@Tc=25 o C) 195 W P D Derating factor above 25 o C 1.6 W/ o C T STG, T J Operating junction temperature & storage temperature -55 ~ + 150 o C T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics N-channel Enhanced mode TO-220 MOSFET 1 Item Sales Type Marking Package Packaging 1 SW P 088R06VT TO-220 TUBE 300 o C Symbol Parameter Value Unit 2 3 TO-220 1. Gate 2. Drain 3. Source BS : 60V R thjc Thermal resistance, Junction to case 0.64 o C/W R thja Thermal resistance, Junction to ambient 52 o C/W I D : 100A R DS(ON) : 10mΩ@V GS =4.5V 1 8.2mΩ@V GS =10V 2 3 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 2.0 1/6
Electrical characteristic ( T C = 25 o C unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off ch188aracteristics BS Drain to source breakdown voltage V GS =0V, I D =250uA 60 V ΔBS Breakdown voltage temperature / ΔT J coefficient I D =250uA, referenced to 25 o C 0.05 V/ o C I DSS Drain to source leakage current =60V, V GS =0V 1 ua =48V, T C =125 o C 50 ua Gate to source leakage current, forward V GS =20V, =0V 100 na I GSS Gate to source leakage current, reverse V GS =-20V, =0V -100 na On characteristics V GS(TH) Gate threshold voltage =V GS, I D =250uA 1.4 2.4 V R DS(ON) Drain to source on state resistance V GS =4.5V, I D =50A 10 13 mω V GS =10V, I D =50A 8.2 10 mω V GS =10V, I D =100A 8.7 11 mω G fs Forward transconductance =5V, I D =50A 97 S Dynamic characteristics C iss Input capacitance C oss Output capacitance V GS =0V, =30V, f=1mhz 205 C rss Reverse transfer capacitance 153 t d(on) Turn on delay time 12 =30V, I D =30A, R G =25Ω, t r Rising time 65 V GS =10V t d(off) Turn off delay time 149 (note 4,5) t f Fall time 102 Q g Total gate charge =48V, V GS =10V, I D =30A, 48 Q gs Gate-source charge Ig=4mA 6 Q gd Gate-drain charge (note 4,5) 17 R g Gate resistance =0V, Scan F mode 1.1 Ω Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction 100 A I SM Pulsed source current diode in the MOSFET 400 A V SD Diode forward voltage drop. I S =100A, V GS =0V 1.4 V t rr Reverse recovery time I S =30A, V GS =0V, 27 ns Q rr Reverse recovery charge di F /dt=100a/us 13 nc. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =0.27mH, I AS =30A, V DD =50V, R G =25Ω, Starting T J = 25 o C 3. I SD 30A, di/dt = 100A/us, V DD BS, Staring T J =25 o C 4. Pulse Test : Pulse Width 300us, duty cycle 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 2.0 2/6 2400 pf ns nc
Fig. 1. On-state characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 2.0 3/6
Fig. 7. Gate charge characteristics Fig. 8. Capacitance Characteristics Fig. 9. Maximum safe operating area Fig. 10. Transient thermal response curve Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 2.0 4/6
Fig. 11. Gate charge test circuit & waveform Fig. 12. Switching time test circuit & waveform R L 90% R GS V DD V IN 10% 10% 10V IN DUT t d(on) t r t d(off) t f t ON t OFF Fig. 13. Unclamped Inductive switching test circuit & waveform Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 2.0 5/6
Fig. 14. Peak diode recovery dv/dt test circuit & waveform DUT + V GS (DRIVER) 10V I S - L I S (DUT) di/dt I RM R G V DD Diode reverse current 10V GS Same type as DUT (DUT) Diode recovery dv/dt V F V DD *. dv/dt controlled by RG *. Is controlled by pulse period Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in XI AN SEMIPOWER TESTING & APPLICATION CENTE R. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 2.0 6/6