SPECIFICATION Device Nme Type Nme DWG. No. Dte : IGBT : FGW5N6HD : : Mr.321 This specifiction's contents my chnge without previous notice. REISIONS DRAWN CHECKED CHECKED D A T E Mr./3/ 1 Mr./3/ 1 N A M E Y.Hr A.Kitmur APPROED A.Kitmur 1/8 H445
Revised Records Dte Clssifiction Index Content Drwn Checked Checked Approved Mr.3 21 enctment Y.Hr A.Kitmur A.Kitmur Apr.27 21 revision Revised chrcteristics 2/8
1.Scope This specifies Fuji IGBT FGW5N6HD 2.Consuction Mold Pckged Type IGBT 3.Applictions for Switching 4.Outview TO247 Outview See to 5/8 pge 5.Absolute Mximum Rtings t Tc=25 (unless otherwise specified) Items CollectorEmitter oltge GteEmitter oltge Collector Current TurnOff Sfe Operting Are I C@25 A DC, Tc=25 *1 I C@ 5 A DC, Tc= I CP Symbol CES GES Chrcteristics 6 ±2 15 15 Unit A A *2 Remrks cc 6 Tj 175 Diode Forwrd current Short Circuit withstnd time IGBT Mx. Power Dissiption FWD Mx. Power Dissiption Junction Temperture Operting Junction Temperture Storge Temperture Mounting Screw Torque *1 : I C@25 limited by bond wire. *2 : Pulse width limited by Tjmx. *3 : Single pulse I F@ 6.Elecicl Chrcteristics t Tc=25 (unless otherwise specified) Sttic Rtings t SC P D@IGBT P D@FWD T j T jop T stg 3 5 3 +175 +15 55 to +15 5 A μs W N cm cc 3 GE=12 Tj 15 Tc=25 Tc=25 *3 Description Symbol Conditions min. typ. mx. Unit Zero gte oltge Collector current I CES CE = 6 GE = 25 ua GteEmitter lekge current I GES CE = GE = ±2 2 na GteEmitter Threshold oltge GE(th) GE = +2 I CE = 5mA 4. 5. 6. CollectorEmitter sturtion oltge CE(st) 1 CE(st) 2 GE = +15 I CE = 5A GE = +15 I CE = 5A Tj = 125 1.5 1.8 1.95 3/8
Dynmic Rtings Description Symbol Conditions min. typ. mx. Unit Input Cpcitnce Output Cpcitnce Reverse Trnsfer Cpcitnce Cies Coes Cres CE =25 GE = f=1mhz 432 21 16 pf Totl Gte Chrge GteEmitter Chrge GteCollector Chrge Q G Q GE Q GC CC = 4 I C = 5A GE = 15 (TBD) (TBD) (TBD) nc TurnOn Time TurnOff Time CC = 4 I C = 5A GE = 15 R G = 1Ω L = 5μH Tc = 25 *3 6 75 4 6 ns TurnOn Time TurnOff Time AntiPrllel Diode Chrcteristics FWD forwrd voltge drop FWD forwrd voltge drop Reverse Recovery Time F 1 F 2 r1 r2 CC = 4 I C = 5A GE = 15 R G = 1Ω L = 5μH Tc = 125 *3 I F =3A I F =3A Tj = 125 CC = 4 I F = 3A di/dt=2a/us CC = 4 I F = 3A di/dt=2a/us 55 8 435 7 2.1 1.7 25 35 3. ns ns *3 : Test circuit nd switching wveforms : see pge 6/8 7.Therml Resistnce Description Symbol min. typ. mx. Unit IGBT Junction to Cse Rth(jc).4167 /W FWD Junction to Cse Rth(jc) 1.25 /W 4/8
Outview : TO247 Pckge (tenttive) (15.9) (5.3) (12.3) (ø3.6) (1.98) ( 14.2) Trdemrk Type nme Lot No. (2.3) (3.) 1 2 3 (5.45) 1 2 3 (4.32) (3.81) (6.17) ( 5.62) (1.2) (5.45) (2.18) (2.95) (ø 7.19 ) (.6) (2.4) CONNECTION 1 2 3 Solder Plting GATE COLLECTOR EMITTER ( 17.52) JEDEC:TO247 DIMENSIONS ARE IN MILLIMETERS. 5/8
DUT (Diode) L cc PG RG DUT (IGBT) GE CE IC 1% 1% 9% Fig.1 : Switching test circuit 9% 9% 1% GE CE IC Fig.2 : Switching wveforms IF r 1% Irr Irr R Fig.3 : Switching wveforms 6/8
15 IGBT Output Chrcteristics Tj=25 15 IGBT Output Chrcteristics Tj=125 GE= 2 15 12 1 GE= 2 15 12 1 8 8 IC [A] IC [A] 5 5..5 1. 1.5 2. 2.5 3. 3.5 4. CE [] Fig.4 : IGBT output chrcteristics 8 6 FWD FIF Chrcteristics Tj=125..5 1. 1.5 2. 2.5 3. 3.5 4. Tj=25 CE [] IF [A] 4 2..5 1. 1.5 2. 2.5 3. 3.5 4. F [] Fig.5 : I F vs F 7/8
25 Switching Loss vs. Collector Current cc=4,ge=+15/,rg=1ω,tj=125 25 Switching Loss vs. Collector Current cc=4,ge=+15/,rg=1ω,tj=125 2 2 Switching Loss Eon [uj] 15 Switching Loss Eoff [uj] 15 5 5 Switching Times [nsec] 1 1 2 3 4 5 6 Collector Current IC [A] Switching Times vs. Collector Current cc=4,ge=+15/,rg=1ω,tj=125 Fig.6 : Switching energy losses vs I CE Switching Times [nsec] 1 1 2 3 4 5 6 Collector Current IC [A] Switching Times vs. Gte Resistor cc=4,ge=+15/,ic=5a,tj=125 1 1 2 3 4 5 6 Collector Current IC [A] 1 1 2 3 4 5 6 Gte Resistor Rg [Ω] Fig.7 : Switching time vs I CE Fig.8 : Switching time vs R G 8/8