INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating up to 80 khz in hard switching, > 200 khz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220 Full-Pak Benefits Generation 4 IGBTs offer highest efficiencies available IGBTs optimized for specific application conditions HEXFRED diodes optimized for performance with IGBTs Minimized recovery characteristics require less/no snubbing G C E N-channel UltraFast Co-Pack IGBT TO-220 Full-Pak PD - 93765 V CES = 600V V CE(on) typ. = 2.5V @V GE = 5V, I C = 5.0A t f(typ.) = 40ns Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I C @ T C = 25 C Continuous Collector Current 6.8 I C @ T C = C Continuous Collector Current 3.9 I CM Pulsed Collector Current 27 A I LM Clamped Inductive Load Current 27 I F @ T C = C Diode Continuous Forward Current 3.9 I FM Diode Maximum Forward Current 27 V ISOL RMS Isolated Voltage, Terminal to case, t=min 2500 V V GE Gate-to-Emitter Voltage ± 20 P D @ T C = 25 C Maximum Power Dissipation 25 W P D @ T C = C Maximum Power Dissipation T J Operating Junction and -55 to +50 T STG Storage Temperature Range C Soldering Temperature, for sec 300 (0.063 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case - IGBT 5.0 R θjc Junction-to-Case - Diode 9.0 C/W R θja Junction-to-Ambient, typical socket mount 65 Wt Weight 2. (0.075) g (oz) www.irf.com /27/99
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage ƒ 600 V V GE = 0V, I C = 250µA DV (BR)CES /DT J Temperature Coeff. of Breakdown Voltage 0.54 V/ C V GE = 0V, I C =.0mA V CE(on) Collector-to-Emitter Saturation Voltage 2.5 2.6 I C = 5.0A V GE = 5V 2.6 V I C = 8.5A See Fig. 2, 5 2.30 I C = 5.0A, T J = 50 C V GE(th) Gate Threshold Voltage 3.0 6.0 V CE = V GE, I C = 250µA DV GE(th) /DT J Temperature Coeff. of Threshold Voltage -8.7 mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance 2.8 4.2 S V CE = V, I C = 5.0A I CES Zero Gate Voltage Collector Current 250 µa V GE = 0V, V CE = 600V 0 V GE = 0V, V CE = 600V, T J = 50 C V FM Diode Forward Voltage Drop.5.8 V I C = 4.0A See Fig. 3.4.7 I C = 4.0A, T J = 25 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±20V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 5 22 I C = 5.0A Qge Gate - Emitter Charge (turn-on) 2.6 4.0 nc V CC = 400V See Fig. 8 Q gc Gate - Collector Charge (turn-on) 5.8 8.7 V GE = 5V t d(on) Turn-On Delay Time 40 T J = 25 C t r Rise Time 6 ns I C = 5.0A, V CC = 480V t d(off) Turn-Off Delay Time 87 30 V GE = 5V, R G = W t f Fall Time 40 2 Energy losses include "tail" and E on Turn-On Switching Loss 0.4 diode reverse recovery. E off Turn-Off Switching Loss 0.2 mj See Fig. 9,, 8 E ts Total Switching Loss 0.26 0.33 t d(on) Turn-On Delay Time 38 T J = 50 C, See Fig., 8 t r Rise Time 8 ns I C = 5.0A, V CC = 480V t d(off) Turn-Off Delay Time 95 V GE = 5V, R G = W t f Fall Time 250 Energy losses include "tail" and E ts Total Switching Loss 0.45 mj diode reverse recovery. L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 270 V GE = 0V C oes Output Capacitance 2 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 3.5 ƒ =.0MHz t rr Diode Reverse Recovery Time 28 42 ns T J = 25 C See Fig. 38 57 T J = 25 C 4 I F = 4.0A I rr Diode Peak Reverse Recovery Current 2.9 5.2 A T J = 25 C See Fig. 3.7 6.7 T J = 25 C 5 V R = 200V Q rr Diode Reverse Recovery Charge 40 60 nc T J = 25 C See Fig. 70 5 T J = 25 C 6 di/dt = 200A/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 280 A/µs T J = 25 C See Fig. During t b 235 T J = 25 C 7 Details of note through are on the last page 2 www.irf.com
Load Current ( A ) 6.0 5.0 4.0 For both: Duty cycle : 50% Tj = 25 C Tsink = 90 C Gate drive as specified Power Dissipation = 7.0W Square wave: 3.0 60% of rated voltage 2.0.0 Ideal diodes 0.0 0. f, Frequency ( khz ) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) o T J = 25 C T = 50 o J C V GE = 5V 20µs PULSE WIDTH 0. V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T = 50 o J C T = 25 o J C V CC = 50V 5µs PULSE WIDTH 5 6 7 8 9 2 3 4 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 8 6 4 2 V CE, Collector-to-Emitter Voltage(V) 5.0 4.0 3.0 2.0 V GE = 5V 80 us PULSE WIDTH I C = I C = A 5 A I C = 2.5 A 0 25 50 75 25 50 T C, Case Temperature ( C).0-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response ( Z thjc ) D = 0.50 0. 0.20 0. 0.05 0.02 0.0 SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty factor D = t / t 2 2. Peak T J= P DMx Z thjc+ T C 0.0 E-005 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 500 400 300 200 VGE = 0V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes SHORTED V GE, Gate-to-Emitter Voltage (V) 20 6 2 8 4 V CC = 400V I C = 5.0A C res 0 V CE, Collector-to-Emitter Voltage (V) 0 0 4 8 2 6 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 0.30 0.25 V CC = 480V V GE = 5V T = 25 J C I C = 5.0A Total Switching Losses (mj) 0. R G = Ω Ohm V GE = 5V V CC = 480V I C = A I = 5.0A C 5 A I C = 2.5 A 0.20 50 60 70 80 90 R G, Gate Resistance (Ohm) 0.0-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj).4.2.0 0.8 0.6 0.4 0.2 R G = Ω Ohm T J = 50 C V CC = 480V V GE = 5V I C, Collector Current (A) V GE = 20V T = 25 o J C 0.0 0 2 4 6 8 I C, Collector-to-emitter Current (A) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current SAFE OPERATING AREA 0 V CE, Collector-to-Emitter Voltage (V) Fig. 2 - Turn-Off SOA Instantaneous Forward Current ( A ) T J = 50 C T = 25 C J T = 25 C J 0. 0.0.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - V FM FM (V) (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
50 45 40 I F = 8.0A I F = 4.0A 4 2 V R = 200V T J = 25 C T J = 25 C I F = 8.0A I F = 4.0A trr- (nc) 35 Irr- ( A) 8 6 30 4 25 20 V R = 200V T J = 25 C T J = 25 C 0 di f/dt - (A/µs) 2 0 0 di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt Fig. 5 - Typical Recovery Current vs. di f /dt 200 V R = 200V T J = 25 C T J = 25 C 0 V R = 200V T J = 25 C T J = 25 C 60 I F = 8.0A I F = 8.0A Qrr- (nc) 20 80 I F = 4.0A di (rec) M/dt- (A /µs) I F = 4.0A 40 0 0 di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di f /dt Fig. 7 - Typical di (rec)m /dt vs. di f /dt www.irf.com 7 0 di f/dt - (A/µs) A
Same type device as D.U.T. +Vge 90% Vge Vce 80% of Vce 430µF D.U.T. Ic % Vce Ic 90% Ic 5% Ic td(off) tf Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µ S Eoff = Vce ic Ic dt dt t t t2 Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx % Ic Vcc td(on) t Vce tr 90% Ic 5% Vce Ipk Ic Vce ie dt t2 Eon = Vce Ic dt t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY W AVEFORMS t4 Erec Vd Vc id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8 www.irf.com
Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t0 t t2 Fig. 8e - Macro Waveforms for Figure 8a's Test Circuit 0V L V * c D.U.T. 0-480V R L = 480V 4 X I C @25 C 50V 6000µF V Fig. 9 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit www.irf.com 9
TO-220 Full-Pak Package Outline 6.00 (.630) 5.80 (.622).60 (.47).40 (.409) 2 3 3.40 (.33) ø 3. (.23) - A - 3.70 (.45) 3.20 (.26).5 (.045) M IN. 3.30 (.30) 3. (.22) 4.80 (.89) 4.60 (.8) 7. (.280) 6.70 (.263) 2.80 (.) 2.60 (.2) LEAD ASSIGNMENTS LEAD ASSIGMENTS - GA - GATE 2 - DR 2- COLLECTOR AIN 3 - SO 3- EMITTER UR CE NOTES: DIMENSIONING & TOLERANCING PER ANS I Y4.5M, 982 2 CONTROLLING DIMENSION: INCH. 3.70 (.540) 3.50 (.530) - B - C D 3X.40 (.055).05 (.042) 2.54 (.) 2X 0.90 (.035) 3X 0.70 (.028) 0.25 (.0) M A M B 0.48 (.09) 3X 0.44 (.07) 2.85 (.2) 2.65 (.4) A MINIMUM CREEPAGE DISTANCE BETW EEN A-B-C-D = 4.80 (.89) B Notes Repetitive rating: V GE =20V; Pulse width limited by maximum junction temperature (figure 20) V CC =80%(V CES ), V GE =20V, L=µH, R G = Ω (figure 9) ƒpulse width 80µs, duty factor 0.%. Pulse width 5.0µs, single shot. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) 322 333 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 883 732020 IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: ++ 49 672 96590 IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: ++ 39 45 0 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: 8 3 3983 0086 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. /99 www.irf.com
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