P-Channel Enhancement Mode MOSFET Description The is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. S1 G1 S2 G2 www.willsemi.com PIN CONNECTIONS 1 4 (Top View) 8 D1 D1 D2 D2 Features -30V/-4.3A,RDS(ON)= 37m @VGS= - 10V -30V/-3.5A,RDS(ON)= 45m @VGS= - 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP 8P package design Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter YYWW YYWW = Date Code = Specific Device Code Order information Marking Diagram and explain -8/TR SOP-8P 2500Tape&Reel http://www.willsemi.com Page 1 6/2008 Ver 1.2
Pin Assignment Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1 Absolute Maximum Ratings (TA=25 Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate Source Voltage VGSS ±12 V Continuous Drain Current(TJ=150 ) TA=25-6.2 TA=70 Pulsed Drain Current IDM -30 A Continuous Source Current(Diode Conduction) IS -2.3 A Power Dissipation ID -4.0 TA=25 2.8 TA=70 Operating Junction Temperature TJ -55/150 Storage Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient R JA 70 /W PD 1.8 A W http://www.willsemi.com Page 2 6/2008 Ver 1.2
Electrical Characteristics (TA=25 Unless otherwise noted) Static Parameter Symbol Conditions Min. Typ Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -0.6-1.0-1.4 Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 na VDS=-30V,VGS=0V -1 Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V TJ=85-10 On-State Drain Current ID(on) VDS= -5V,VGS =-10V -25 A VGS=-10V,ID=-4.3A 0.030 0.037 0.044 Drain-Source On-Resistance RDS(on) VGS=-4.5V,ID=-3.5A 0.0366 0.045 0. 054 Forward Transconductance gfs VDS=-5 V,ID=-4.3A 12 S Diode Forward Voltage VSD IS=-1.0A,VGS =0V -0.75-1 V V ua Dynamic Total Gate Charge Qg 10 15 VDS=-15V,VGS=-10V Gate-Source Charge Qgs 3.4 ID= -4.3A Gate-Drain Charge Qgd 1.7 Input Capacitance Ciss 560 VDS=-15V,VGS=0V Output Capacitance Coss 100 f=1mhz Reverse Transfer Capacitance Crss 67 td(on) 7 15 Turn-On Time VDD=-15V,RL=15 tr 10 20 ID -4.3A,VGEN=-10V td(off) RG=6 40 80 Turn-Off Time tf 20 40 nc pf ns http://www.willsemi.com Page 3 6/2008 Ver 1.2
Typical Characteristis,Drain Current(A) 30 24 18 12 6 =10V =6V =5V =4.5V =4V =3V,Drain Current(A) 35 30 25 20 15 10 5 V DS =3V 0 0 1 2 3 4 5 V DS,Drain-Source voltage(v) Drain Current VS Drain-Source voltage 0 0 1 2 3 4 5,Gate-Source Voltage(V) Drain Current VS Gate-Source Voltage 140 =4.6A,T=25 O C 2.0 T=25 O C Resistance(mohm) 120 100 80 60 I S Source Current(A) 1.5 1.0 0.5 2 4 6 8 10 Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 V SD Source to Drain Voltage Resistance VS Gate-Source Voltage Source Current VS Source to Drain Voltage http://www.willsemi.com Page 4 6/2008 Ver 1.2
Typical Characteristis (on) Vaniance(v) 0.20 0.15 0.10 0.05 0.00-0.05-0.10 =250(uA), =V DS -0.15-50 -25 0 25 50 75 100 125 150 175 T J Temperature( o C) Resistance(mohm) 70 65 60 55 50 =10V =4.6A 45-40 0 40 80 120 160 T J Temperature( o C) Gate-source voltage vs Temperature Resistance VS T J Temperature Resistance(ohm) 0.15 0.10 =4.5V =6.0V =10V 0.05 0 10 20 30,Drain Current(A) Resistance VS,Drain Current http://www.willsemi.com Page 5 6/2008 Ver 1.2
Typical Characteristis http://www.willsemi.com Page 6 6/2008 Ver 1.2
Packaging Information http://www.willsemi.com Page 7 6/2008 Ver 1.2