7MBRU12 IGBT Modules IGBT MODULE (U series) 12 / / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and DC Servo Drive mplifier Uninterruptible Power Supply Maximum ratings and characteristics bsolute maximum ratings (Tc= C unless otherwise specified) Item Symbol Condition Rating Unit CollectorEmitter voltage GateEmitter voltage CES GES 12 ±2 IC Continuous Tc= C Collector current Tc=8 C 15 ICP 1ms Tc= C Tc=8 C 5 3 IC IC pulse 1ms 5 Collector power disspation CollectorEmitter voltage GateEmitter voltage Collector current PC CES GES IC 1 device Continuous Tc= C Tc=8 C 115 12 ±2 15 W ICP 1ms Tc= C Tc=8 C 5 3 Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage PC RRM RRM 1 device 115 12 16 W verage output current Surge current (NonRepetitive) IO IFSM 5Hz/6Hz sine wave Tj=15 C, 1ms 26 I 2 t (NonRepetitive) I 2 t half sine wave 338 2 s Operating junction temperature Storage temperature Isolation between terminal and copper base *2 Tj Tstg iso C : 1 minute +15 4 to +1 C C C voltage between thermistor and others *3 C Mounting screw torque 3.5 *1 N m *1 Recommendable value : 2.5 to 3.5 N m (M5) *2 ll terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Converter Brake Inverter
7MBRU12 Elecical characteristics (Tj= C unless otherwise specified) Item Symbol Condition Characteristics Unit Thermistor Converter Brake Inverter Min. Typ. Max. Zero gate voltage collector current ICES CE=12, GE= 1. m GateEmitter leakage current IGES CE=, GE=±2 2 n GateEmitter threshold voltage GE(th) CE=2, IC=m 4.5 6.5 8.5 CollectorEmitter saturation voltage CE(sat) GE=15 Tj= C 2.3 2.8 (terminal) Ic= Tj=1 C 2.75 CE(sat) Tj= C 2.1 2.6 (chip) Tj=1 C 2.55 Input capacitance Cies GE=, CE=1, f=1mhz 2 nf Turnon time CC=6.41 1.2 µs IC=.28.6 (i) GE=±15.3 Turnoff time RG= 68 Ω.37 1..7.3 Forward on voltage F GE= Tj= C 2.95 3.55 (terminal) IF= Tj=1 C 2.55 F Tj= C 2.75 3.35 (chip) Tj=1 C 2.35 Reverse recovery time r IF=.35 µs Zero gate voltage collector current ICES CE=12, GE= 1. m GateEmitter leakage current IGES CE=, GE=±2 2 n CollectorEmitter saturation voltage CE(sat) IC= Tj= C 2.3 2.8 (terminal) GE=15 Tj=1 C 2.75 CE(sat) Tj= C 2.1 2.6 (chip) Tj=1 C 2.55 Turnon time CC=6.41 1.2 µs IC=.28.6 Turnoff time GE=±15.37 1. RG= 68 Ω.7.3 Reverse current IRRM R=12 1. m Forward on voltage FM IF= terminal 1.2 1.5 GE= chip 1.1 Reverse current Resistance B value IRRM R B R=16 T= C T=1 C T=/5 C 465 335 5 495 3375 1. 52 345 m Ω K Thermal resistance Characteristics Item Symbol Condition Characteristics Unit Min. Typ. Max. Inverter IGBT 1.7 Thermal resistance ( 1 device ) Rth(jc) Inverter FWD 1.58 Brake IGBT 1.7 C/W Converter Diode.9 Contact thermal resistance * Rth(cf) With thermal compound.5 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) 22(P1) [Brake] [Inverter] [Thermistor] 8 9 2(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 19(Eu) 17(Ev) 15(Ew) 7(B) 4(U) 5() 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 1(En) 23(N) 24(N1)
7MBRU12 Characteristics (Representative) Collector current vs. CollectorEmitter voltage (typ.) Collector current vs. CollectorEmitter voltage (typ.) Tj= C / chip Tj= 1 C / chip 4 4 3 2 1 GE=2 15 12 1 3 2 1 GE=2 15 12 1 8 8 1 2 3 4 5 1 2 3 4 5 Collector current vs. CollectorEmitter voltage (typ.) CollectorEmitter voltage vs. GateEmitter voltage (typ.) GE=15 / chip Tj= C / chip 4 1 3 2 1 Tj= C Tj=1 C Collector Emitter voltage : CE [ ] 8 6 4 2 Ic=3 Ic=15 Ic= 7.5 1 2 3 4 5 5 1 15 2 Gate Emitter voltage : GE [ ] Capacitance vs. CollectorEmitter voltage (typ.) Dynamic Gate charge (typ.) GE=, f= 1MHz, Tj= C cc=6, Ic=, Tj= C 1. Capacitance : Cies, Coes, Cres [ nf ] 1..1 Cies Coes Cres 1 2 3 CollectorEmitter voltage : CE [ 2/div ] Gate Emitter voltage : GE [ 5/div ] GE CE 3 6 9 Gate charge : Qg [ nc ]
7MBRU12 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) cc=6, GE=±15, Rg=68Ω, Tj= C cc=6, GE=±15, Rg=68Ω, Tj=1 C 1 1 Switching time :,,, [ nsec ] 1 1 Switching time :,,, [ nsec ] 1 1 1 1 1 2 3 1 2 3 Collector current : Ic [ ] Collector current : Ic [ ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) cc=6, Ic=, GE=±15, Tj= C cc=6, GE=±15, Rg=68Ω 1 8. Switching time :,,, [ nsec ] 1 1 Switching loss : Eon, Eoff, Err [ mj/pulse ] 7. 6. 5. 4. 3. 2. 1. Eon(1 C) Eon( C) Eoff(1 C) Eoff( C) Err(1 C) Err( C) 1 1. 1. 1. Gate resistance : Rg [ Ω ]. 1 2 3 4 Collector current : Ic [ ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) cc=6, Ic=, GE=±15, Tj= 1 C +GE=15,GE <= 15, RG >= 68Ω,Tj <= 1 C 15 75 Switching loss : Eon, Eoff, Err [ mj/pulse ] 1 5 Eon Eoff Err Collector current : Ic [ ] 5 1. 1. 1. 4 8 12 Gate resistance : Rg [ Ω ] Collector Emitter voltage : CE [ ]
7MBRU12 Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip cc=6, GE=±15, Rg=68Ω 4 1 Forward current : IF [ ] 3 2 1 Tj=1 C Tj= C Reverse recovery current : Irr [ ] Reverse recovery time : r [ nsec ] 1 r (1 C) r ( C) Irr (1 C) Irr ( C) 1 2 3 4 1 1 2 3 Forward on voltage : F [ ] Forward current : IF [ ] [ Converter ] Forward current vs. Forward on voltage (typ.) chip 6 Forward current : IF [ ] 5 4 3 2 Tj= C Tj=1 C 1..5 1. 1.5 2. Forward on voltage : FM [ ] Transient thermal resistance (max.) [ Thermistor ] Temperature characteristic (typ.) 1. 1 Thermal resistanse : Rth(jc) [ C/W ] 1..1 FWD[Inverter] IGBT[Inverter, Brake] Conv. Diode Resistance : R [ kω ] 1 1.1.1.1.1 1..1 6 4 2 2 4 6 8 1 12 14 16 18 Pulse width : Pw [ sec ] Temperature [ C ]
7MBRU12 [ Brake ] [ Brake ] Collector current vs. CollectorEmitter voltage (typ.) Collector current vs. CollectorEmitter voltage (typ.) Tj= C / chip Tj= 1 C / chip 4 4 3 2 1 GE=2 15 12 1 3 2 1 GE=2 15 12 1 8 8 1 2 3 4 5 1 2 3 4 5 [ Brake ] [ Brake ] Collector current vs. CollectorEmitter voltage (typ.) CollectorEmitter voltage vs. GateEmitter voltage (typ.) GE=15 / chip Tj= C / chip 4 1 3 2 1 Tj= C Tj=1 C Collector Emitter voltage : CE [ ] 8 6 4 2 Ic=3 Ic=15 Ic=7.5 1 2 3 4 5 5 1 15 2 Gate Emitter voltage : GE [ ] [ Brake ] [ Brake ] Capacitance vs. CollectorEmitter voltage (typ.) Dynamic Gate charge (typ.) GE=, f= 1MHz, Tj= C cc=6, Ic=, Tj= C 1. Capacitance : Cies, Coes, Cres [ nf ] 1..1 Cies Coes Cres 1 2 3 CollectorEmitter voltage : CE [ 2/div ] Gate Emitter voltage : GE [ 5/div ] GE CE 3 6 9 Gate charge : Qg [ nc ]
7MBRU12 Outline Drawings, mm