SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R240S Rev. 1.1 Aug. 2017
SSP80R240S/SSF80R240S/SSB80R240S 800V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. SSP80R240S Absolute Maximum Ratings SSB80R240S September, 2013 SSF80R240S SJ-FET Features Multi-Epi process SJ-FET 850V @TJ = 150 Typ. RDS(on) = 0.21Ω Ultra Low Gate Charge (typ. Qg = 27.5nC) 100% avalanche tested Symbol Parameter SSP_B80R240S SSF80R240S Unit V DSS Drain-Source Voltage 800 V I D Drain Current -Continuous (TC = 25 ) -Continuous (TC = 100 ) 18.4* 11.6* A I DM Drain Current Pulsed (Note 1) 51* A V GSS Gate-Source voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 485 mj I AR Avalanche Current (Note 1) 3.5 A E AR Repetitive Avalanche Energy (Note 1) 1 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns dvds/dt Drain Source voltage slope (Vds=640V) 50 V/ns P D Power Dissipation (TC = 25 ) 151 35 W T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum Lead Temperature for Soldering Purpose,1/8 from Case for 5 Seconds * Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75. 300 Thermal Characteristics Symbol Parameter SSP_B80R240S SSF80R240S Unit R θjc Thermal Resistance, Junction-to-Case 0.83 3.7 /W R θcs R θja Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to- Ambient 0.5 - /W 62 80 /W
Electrical Characteristics TC = 25 unless otherwise noted Symbol Parameter Conditions Min Typ Max Unit Off Characteristics BV DSS ΔBV DSS / Δ TJ I DSS I GSSF I GSSR On Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse V GS = 0V, I D = 250µA, T J = 25 V GS = 0V, I D = 250µA, T J = 150 I D = 250µA, Referenced to 25 V DS = 800V, V GS = 0V -T J = 150 800 - - V - 850 - V - 0.6 - V/ - - 10 V GS = 30V, V DS = 0V - - 100 na V GS = -30V, V DS = 0V - - -100 na V GS(th) Gate Threshold Voltage V DS = V GS, I D = 250µA 2.5 3.5 4.5 V R DS(on) Static Drain-Source On- Resistance V GS = 10V, I D = 9A - 0.21 0.24 Ω g FS Forward Trans conductance V DS = 40V, I D = 18A - 19 - S Dynamic Characteristics C iss Input Capacitance V DS = 25V, V GS = 0V, - 1290 - pf C oss Output Capacitance f = 100kHz - 380 - pf C rss Reverse Transfer Capacitance - 22 - pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 400V, I D = 10A - 40 - ns t r Turn-On Rise Time R G = 25Ω(Note 4) - 21 - ns t d(off) Turn-Off Delay Time - 139 - ns t f Turn-Off Fall Time - 21 - ns Q g Total Gate Charge V DS = 450V, I D = 10A - 27.5 nc Q gs Gate-Source Charge V GS = 10V (Note 4) - 6.3 - nc Q gd Gate-Drain Charge - 11.2 - nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current - - 18 A I SM Maximum Pulsed Drain-Source Diode Forward Current - - 51 A V SD Drain-Source Diode Forward Voltage t rr Reverse Recovery Time V R = 480V, I F = 20A di F /dt =100A/µs Q rr Reverse Recovery Charge Peak reverse recovery I rrm Current V GS = 0V, I F = 10A - 1 1.5 V 1 - µa µa - 500 - ns - 6 - µc - 20 - A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS =3.5A, V DD =50V, Starting TJ=25 3. I SD ID, di/dt 200A/us, V DD BV DSS, Starting TJ = 25 4. Essentially Independent of Operating Temperature Typical Characteristics
P tot [w] P tot [w] Typical Performance Characteristics Power dissipation TO-220P Tc[ ] Max. transient thermal impedance TO-220P Power dissipation TO-220F Tc[ ] Max. transient thermal impedance TO-220F T p [s] T p [s]
Vgs[V] I D [A] I D [A] I D [A] Typical Performance Characteristics Safe operating area TC=25 TO-220P Safe operating area TC=25 TO-220F V DS [V] V DS [V] I D =f(v DS ); T C =25 ; V GS > 7V; D=0; parameter t p Typ. transfer characteristics 10 9 8 7 6 Typ. gate charge 5 4 3 2 1 V GS [V] I D =f(v GS ); V DS =40V 0 0 5 10 15 20 25 30 Qgate[nC] V GS =f(q g ), I D =18 A pulsed
I D [A] I D [A] Typical Performance Characteristics Typ. output characteristics T j =25 V DS [V] I D =f(v DS ); T j =25 ; parameter: V GS Typ. drain-source on-state resistance Typ. output characteristics T j =150 V DS [V] I D =f(v DS ); T j =150 ; parameter: V GS Typ. drain-source on-state resistance R DS(on) R DS(on) I D [A] R DS (on)=f(i D ); T j =150 ; parameter:v GS T j [ ] R DS (on)=f(t j ); I D =11 A; V GS =10 V
E AS [mj] Typical Performance Characteristics Typ. capacitances V DS [V] C=f(V DS ); V GS =0 V; f=1 MHz Avalanche energy Typ. Coss stored energy V DS [V] E OSS =f(v DS ) Drain-source breakdown voltage T j [ ] E AS =f(t j ); I D =3.5 A; V DD =50 V T j [ ] V BR(DSS) =f(t j ); I D =1.0 ma
I F [A] Typical Performance Characteristics Forward characteristics of reverse diode V SD [V] I F =f(v SD ); parameter: T j
Test circuits Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching times test circuit for inductive load Unclamped inductive load test circuit and waveform Switching time waveform Unclamped inductive load test circuit Unclamped inductive waveform
Test circuits Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform
Package Outline TO-220 COMMON DIMENIONS
Package Outline TO-220 Full PAK
Package Outline TO-263