Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A <.3 Absolute Maximum Ratings Parameter Symbol GP2M2A5H Unit Drain-Source Voltage S 5 V Gate-Source Voltage ±3 V Continuous Drain Current T C = 25 18 18 * A T C = 1 12.4 12.4 * A Pulsed Drain Current (Note 1) M 72 72 * A Single Pulse Avalanche Energy (Note 2) E AS 75 mj Repetitive Avalanche Current (Note 1) I AR 18 A Repetitive Avalanche Energy (Note 1) E AR 29 mj Power Dissipation Device Package Marking Remark GP2M2A5H TO-22 GP2M2A5H RoHS TO-22F RoHS T C = 25 29 48 W P D Derate above 25 2.32.38 W/ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Operating Junction and Storage Temperature Range T J, T STG -55~15 Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds T L 3 * Limited only by maximum junction temperature Thermal Characteristics Parameter Symbol GP2M2A5H Unit Maximum Thermal resistance, Junction-to-Case R JC.43 2.6 /W Maximum Thermal resistance, Junction-to-Ambient R JA 62.5 62.5 /W 1/7
GP2M2A5H Electrical Characteristics : T C =25, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BS = V, = 25 µa 5 -- -- V = 5 V, = V -- -- 1 µa Zero Gate Voltage Drain Current SS = 4 V, T C = 125 C -- -- 1 µa Forward Gate-Source Leakage Current I GSSF = 3 V, = V -- -- 1 na Reverse Gate-Source Leakage Current I GSSR = -3 V, = V -- -- -1 na ON Gate Threshold Voltage (th) =, = 25 µa 3 -- 5 V Drain-Source On-Resistance R DS(on) = 1 V, = 9 A --.25.3 Forward Transconductance (Note 4) g FS = 3 V, = 9 A -- 14 -- S DYNAMIC Input Capacitance C iss = 25 V, = V, -- 288 -- pf Output Capacitance C oss f = 1. MHz -- 283 -- pf Reverse Transfer Capacitance C rss -- 1 -- pf SWITCHING Turn-On Delay Time (Note 4,5) t d(on) V DD = 25 V, = 18 A, -- 64 -- ns Turn-On Rise Time (Note 4,5) t r R G = 25 Ω -- 61 -- ns Turn-Off Delay Time (Note 4,5) t d(off) -- 123 -- ns Turn-Off Fall Time (Note 4,5) t f -- 38 -- ns Total Gate Charge (Note 4,5) Q g = 4 V, = 18 A, -- 44 -- nc Gate-Source Charge (Note 4,5) Q gs = 1 V -- 14 -- nc Gate-Drain Charge (Note 4,5) Q gd -- 13 -- nc SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current I S --- -- -- 18 A Maximum Pulsed Drain-Source Diode Forward Current I SM --- -- -- 72 A Drain-Source Diode Forward Voltage V SD = V, I S = 18 A -- -- 1.5 V Reverse Recovery Time (Note 4) t rr = V, I S = 18 A -- 421 -- ns Reverse Recovery Charge (Note 4) Q rr di F / dt = 1 A/µs -- 5.9 -- µc Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=4.6mH, I AS = 18A, V DD = 5V, R G = 25Ω, Starting T J = 25 3 I SD 18A, di/dt 2A/µs, V DD B, Starting T J = 25 4. Pulse Test :Pulse width 3µs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2/7
GP2M2A5H Drain Current, 6 5 4 3 2 Top =15.V 1.V 9.V 8.V 7.V 6.V Bottom 5.5V Drain Current, 1 1 1 = 3V 25 μs Pulse Test 15 25-55 1 1. T C = 25 2. 25μs Pulse Test 5 1 15 2 Drain-Source Voltage,.1 2 4 6 8 1 Gate-Source Voltage, Drain-Source On-Resistance R DS(ON) [Ω].6.4.2 T J = 25 = 1V = 2V Reverse Drain Current, R 7 6 5 4 3 2 1 = V 25μs Pulse Test 15 25. 1 2 3 4 5 6 Drain Current,..5 1. 1.5 2. Source-Drain Voltage, V SD Capacitance [pf] 5 4 3 2 1 C rss C oss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd = V f = 1 MHz C iss Gate-Source Voltage, 12 1 8 6 4 2 = 18A = 1V = 25V = 4V 1-1 1 1 1 Drain-Source Voltage, 1 2 3 4 5 Total Gate Charge, Q G [nc] 3/7
GP2M2A5H Drain-Source Breakdown Voltage BS, (Normalized) 1.2 1.15 1.1 1.5 1..95.9.85 = V = 25 μa Drain-Source On-Resistance R DS(ON), (Normalized) 3. 2.5 2. 1.5 1..5 = 1 V = 9 A.8-8 -4 4 8 12 16 Junction Temperature,T J [ o C]. -8-4 4 8 12 16 Junction Temperature, T J [ o C] 2 1.5 Drain Current, 15 1 5 Gate Threshold Voltage V TH, (Normalized) 1..5 = = 25 A 25 5 75 1 125 15 Case Temperature, T C [ ]. -8-4 4 8 12 16 Junction Temperature, T J [ o C] GP2M2A5H Drain Current, Operation in This Area is Limited by R 1 2 DS(on) 1 us 1 us 1 ms 1 1 1 ms 1 ms DC 1 1-1 T C = 25 o C T J = 15 o C Single Pulse 1-2 1 1 1 1 2 1 3 Drain-Source Voltage, Drain Current, Operation in This Area is Limited by R 1 2 DS(on) 1 us 1 us 1 ms 1 1 1 ms 1 ms 1 DC 1-1 T C = 25 o C T J = 15 o C Single Pulse 1-2 1 1 1 1 2 1 3 Drain-Source Voltage, 4/7
GP2M2A5H 1 GP2M2A5H Transient thermal impedance (t) 1-1 1-2 Duty=.5.2.1.5.2.1 single pulse P DM t T Duty = t/t (t) =.43 /W Max. 1-5 1-4 1-3 1-2 1-1 1 1 1 Pulse Width, t [sec] Duty=.5 Transient thermal impedance (t) 1 1-1 1-2.2.1.5.2.1 single pulse P DM t T Duty = t/t (t) = 2.6 /W Max. 1-5 1-4 1-3 1-2 1-1 1 1 1 Pulse Width, t [sec] 5/7
TO-22AB-3L MECHANICAL DATA GP2M2A5H 6/7
TO-22F-3L MECHANICAL DATA GP2M2A5H Disclaimer : SYMBOL INCHES MILLIMETERS MIN MAX MIN MAX A.178.194 4.53 4.93 b.28.36.71.91 C.18.24.45.6 D.617.633 15.67 16.7 E.392.48 9.96 1.36 e.1 TYP. 2.54TYP. H1.256.272 6.5 6.9 J1.11.117 2.56 2.96 L.53.519 12.78 13.18 φq.117.133 2.98 3.38 b1.45.55 1.15 1.39 L1.114.13 2.9 3.3 Q1.122.138 3.1 3.5 F.92.18 2.34 2.74 NOTES Global Power Technologies Group reserves the right to make changes without notice to products herein to improve reliability, performance, or design. The information given in this document is believed to be accurate and reliable. However, it shall in no event be regarded as a guarantee of conditions and characteristics. With respect to any information regarding the application of the device, Global Power Technologies Group hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of patent rights of any third party. 7/7