500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nc (Typ.) Extended Safe Operating Area Lower R DS(ON) GS = 00% Avalanche Tested 2 3.Gate 2. Drain 3. Source Absolute Maximum Ratings T C =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 500 V Drain Current Continuous (T C = 25 ) 8 * A Drain Current Continuous (T C = 00 ).4 * A M Drain Current Pulsed (Note ) 72 * A Gate-Source Voltage 30 V E AS Single Pulsed Avalanche Energy (Note 2) 950 mj I AR Avalanche Current (Note ) 8 A E AR Repetitive Avalanche Energy (Note ) 3.7 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 ) 37 W - Derate above 25 0.29 W/ T J, T STG Operating and Storage Temperature Range -55 to +50 T L Maximum lead temperature for soldering purposes, /8 from case for 5 seconds 300 * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R JC Junction-to-Case -- 3.4 /W R JA Junction-to-Ambient -- 62.5
Package Marking and Odering Information Device Marking Week Marking Package Packing Quantity RoHS Status YWWX TO-220F Tube 50 Pb Free YWWXg TO-220F Tube 50 Halogen Free Electrical Characteristics T C =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = 250 2.5 -- 4.5 V Static Drain-Source On-Resistance = 0 V, = 9.0 A -- 0.22 0.265 R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 500 -- -- V BS Breakdown Voltage Temperature I / T J Coefficient D = 250, Referenced to 25 -- 0.5 -- V/ = 500 V, = 0 V -- -- SS Zero Gate Voltage Drain Current = 400 V, T C = 25 -- -- 0 I GSS Gate-Body Leakage Current = 30 V, = 0 V -- -- 00 Dynamic Characteristics C iss Input Capacitance -- 3300 4300 = 25 V, = 0 V, C oss Output Capacitance -- 290 380 f =.0 MHz C rss Reverse Transfer Capacitance -- 6 2 Switching Characteristics t d(on) Turn-On Time = 250 V, = 8 A, -- 80 70 t r Turn-On Rise Time R G = 25 -- 80 70 t d(off) Turn-Off Delay Time -- 90 390 t f Turn-Off Fall Time (Note 4,5) -- 60 30 Q g Total Gate Charge = 400 V, = 8 A, -- 58 76 nc Q gs Gate-Source Charge = 0 V -- 6 -- nc Q gd Gate-Drain Charge (Note 4,5) -- 7 -- nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 8 I SM Pulsed Source-Drain Diode Forward Current -- -- 72 A V SD Source-Drain Diode Forward Voltage I S = 8 A, = 0 V -- --.4 V trr Reverse Recovery Time I S = 8 A, = 0 V -- 375 -- Qrr Reverse Recovery Charge di F /dt = 00 A/ (Note 4) -- 4.2 -- Notes ;. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=5.3mH, I AS =8A, =50V, R G =25, Starting T J =25 C 3. I SD di/dt, DSS, Starting T J =25 C 4. Pulse Test : Pulse Width 5. Essentially Independent of Operating Temperature
Typical Characteristics 0 0 Top : 5.0 V 0.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V 0 0 0, Drain-Source Voltage [V]. 300us Pulse Test 2. T C = 25 o C 00 0 50 o C 25 o C -25 o C. = 30V 2. 300us Pulse Test 0. 2 4 6 8 0, Gate-Source Voltage [V] Figure. On Region Characteristics Figure 2. Transfer Characteristics 0.6 R DS(ON) [ ], Drain-Source On-Resistance 0.5 0.4 0.3 0.2 0. = = 20V Note : T J = 25 o C R, Reverse Drain Current [A] 0 50 o C 25 o C. = 0V 2. 300us Pulse Test 0.0 0 8 6 24 32 40 48 56 Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 0.0 0.2 0.4 0.6 0.8.0.2.4 V SD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitances [pf] 5000 4500 4000 3500 3000 2500 2000 500 000 500 C iss C oss C rss 0 0-0 0 0, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd * Note ;. = 0 V 2. f = MHz Figure 5. Capacitance Characteristics, Gate-Source Voltage [V] 2 0 8 6 4 2 = 00V = 250V = 400V Note : = 8A 0 0 0 20 30 40 50 60 Q G, Total Gate Charge [nc] Figure 6. Gate Charge Characteristics
Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage.2..0 0.9 Note :. = 0 V 2. = 250 A R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0.5.0 0.5 Note :. = 0 V 2. = 9.0 A 0.8-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature 0.0-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R 0 2 DS(on) 0 s 0 0 0 0-0 -2. T C = 25 o C 2. T J = 50 o C 3. Single Pulse 00 s ms 0 ms 00 ms DC 0 0 0 0 2 0 3, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area 8 5 2 9 6 3 0 25 50 75 00 25 50 T C, Case Temperature [ o C] Figure 0. Maximum Drain Current vs Case Temperature D=0.5 Z JC (t), Thermal Response 0 0 0-0 -2 0.2 0. 0.05 0.02 0.0 single pulse P DM. Z JC (t) = 3.4 o C/W Max. 2. Duty Factor, D=t /t 2 3. T JM - T C = P DM * Z JC (t) t t 2 0-5 0-4 0-3 0-2 0-0 0 0 t, Square Wave Pulse Duration [sec] Figure. Transient Thermal Response Curve
2V 200nF 300nF Fig 2. Gate Charge Test Circuit & Waveform Same Type as Q g Q gs Q gd 3mA Charge Fig 3. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) V in 0% t d(on) t r t d(off) tf t on t off Fig 4. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- L L I 2 2 AS BS -------------------- BS -- BS I AS R G (t) (t) t p Time
Fig 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms + _ I S L Driver R G Same Type as dv/dt controlled by RG I S controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period I S ( ) I FM, Body Diode Forward Current di/dt I RM ( ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension ±0.20 ±0.20 ±0.20 2.54±0.20 0.70±0.20 5.87±0.20 3.30±0.20 2.42±0.20 6.68±0.20 2.76±0.20.47max 9.75±0.20 2.54typ 2.54typ 0.80±0.20 0.50±0.20 TO-220FM TO-220F