HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Motor Control & LED Lighting Power DC-DC Converters Key Parameters Parameter Value Unit BS @T j,max 850 V I D 9 A R DS(on), max 0.65 Ω Qg, Typ 0.5 nc Package & Internal Circuit G D-PAK S D June 208 Absolute Maximum Ratings T J =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 800 V Gate-Source Voltage ±30 V I D Drain Current Continuous (T C = 25 ) 9.0 A Drain Current Continuous (T C = 00 ) 5.5 A I DM Drain Current Pulsed (Note ) 26 A E AS Single Pulsed Avalanche Energy (Note 2) 20 mj dv/dt MOSFET dv/dt ruggedness, =0 640V 50 V/ns dv/dt Reverse diode dv/dt, =0 640V, I DS I D 5 V/ns P D Power Dissipation (T C = 25 ) 83 W T J, T STG Operating and Storage Temperature Range -55 to +50 T L Maximum lead temperature for soldering purposes, /8 from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case --.5 /W R θja Junction-to-Ambient -- 62.5
Electrical Characteristics T J =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, I D = 250 μa 2.5 -- 4.5 V R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 μa 800 -- -- V I DSS Static Drain-Source On-Resistance Zero Gate Voltage Drain Current = 800 V, = 0 V -- -- 0 μa = 800 V, T J = 50 -- -- 00 μa I GSS Gate-Body Leakage Current = 30 V, = 0 V -- -- ±00 na Dynamic Characteristics = 0 V, I D = 4.5 A -- 0.55 0.65 Ω C iss Input Capacitance -- 380 -- pf C oss Output Capacitance = 00 V, = 0 V, f =.0 MHz -- 30 -- pf C rss Reverse Transfer Capacitance -- 4.6 -- pf Switching Characteristics t d(on) Turn-On Time -- 3 -- ns t r Turn-On Rise Time = 400 V, I D = 4.5 A, -- 0 -- ns t d(off) Turn-Off Delay Time R G = 25 Ω -- 85 -- ns t f Turn-Off Fall Time -- 4 -- ns Q g Total Gate Charge -- 0.5 3.6 nc Q gs Gate-Source Charge = 640 V, I D = 4.5 A = 0 V -- 2.8 -- nc Q gd Gate-Drain Charge -- 4. -- nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 9 I SM Pulsed Source-Drain Diode Forward Current -- -- 26 V SD Source-Drain Diode Forward Voltage I S = 4.5 A, = 0 V -- --.5 V trr Reverse Recovery Time I S = 4.5 A, = 0 V -- 240 -- ns Qrr Reverse Recovery Charge di F /dt = 00 A/μs -- 3. -- μc Notes ;. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS =2A, =50V, R G =25Ω, Starting T J =25 C 3. Pulse Test : Pulse Width 300μs, Duty Cycle 2% A
Typical Characteristics I D, Drain Current [A] R DS(ON) [Ω] 8.0 5.0 2.0 9.0 6.0 3.0 0.0 2.0.8.6.4.2.0 0.8 0.6 0.4 0 5 0 5 20, Drain-Source Voltage [V] 0 2 4 6 8 0 2 4 6 8 I D [A] 20V 0V 8V Figure. On Region Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 7V 6V 5.5V 5V. = 0 V 2. T J = 25 I D, Drain Current [A] I F [A] 8.0 5.0 2.0 9.0 6.0 3.0 0.0 E+02 E+0 E+00 E-0 E-02 E-03 0 2 4 6 8 0, Gate-Source Voltage [V] Figure 2. Transfer Characteristics 50 25 E-04. = 0 V 2. 300us Pulse Test E-05 0 0.2 0.4 0.6 0.8.2 V SD [V] 25 50. = 20 V 2. 300us Pulse Test Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 000 2 Capacitances [pf] 00 0 Ciss Coss [V] 0 8 6 4 60V 400V 640V Crss 0 00 200 300 400 500 600 700 800 Drain-Source Voltage [V]. = 0 V 2. f = MHz 2 0 0 2 4 6 8 0 2 Q G [nc]. I D = 4.5 A Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Typical Characteristics (continued) I D [A] B VDSS (Normalized).2. 0.9. = 0 V 2. I D = 250 ua 0.8-00 -50 0 50 00 50 200 00 0 0. T J [ ] Figure 7. Breakdown Voltage Variation vs Temperature DC 0ms ms 00us 0us R DS(on) (Normalized) I D [A] 2.5 2.5 0.5. = 0 V 2. I D = 4.5 A 0-00 -50 0 50 00 50 200 9 6 3 T J [ ] Figure 8. On-Resistance Variation vs Temperature 0.0. T C = 25 2. T J(MAX) = 50 3. Single Pulse 0.00 0. 0 00 000 [V] Figure 9. Maximum Safe Operating Area 0 25 50 75 00 25 50 T C [ ] Figure 0. Maximum Drain Current vs Case Temperature 0 Z θjc [K/W] 0. 0.5 0.2 0. 0.05 0.02 0.0 single pulse 0.0 E-05 0.000 0.00 0.0 0. t P [S] Figure. Transient Thermal Response Curve
2V 200nF 3mA 50KΩ 300nF Fig 2. Gate Charge Test Circuit & Waveform Same Type as Fig 3. Resistive Switching Test Circuit & Waveforms R L 0V Q gs 90% Q g Q gd Charge R G ( 0.5 rated ) 0V V in 0% t d(on) t r t d(off) tf t on t off Fig 4. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- L L I 2 2 AS BS -------------------- BS -- I D BS I AS R G I D (t) 0V (t) t p Time
Fig 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms R G I S Driver + _ Same Type as L dv/dt controlled by RG I S controlled by pulse period ( Driver ) D = Gate Pulse Width -------------------------- Gate Pulse Period 0V I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension D-PAK (TO-252A)