AP5GM-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free Description D D D D SO- G S S G N-CH BV 3V R I D DSS DS(ON) P-CH BS -3V R DS(ON) 5mΩ I -5.3A D mω 7A Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D D The AP5GM-HF-3 is in a standard SO- package, which is widely used for commercial and industrial surface-mount applications, and is well suited for applications such as DC and servo motor drives. G S G S Absolute Maximum Ratings V GS Symbol Parameter Rating Units N-channel P-channel Thermal Data Drain-Source Voltage Gate-Source Voltage I D at T A =5 C Continuous Drain Current 3 I D at T A =7 C Continuous Drain Current 3 I DM Pulsed Drain Current P D at T A =5 C Total Power Dissipation T STG T J 3-3 V ± ± V 7. -5.3 A 5. -.7 A - A. W Linear Derating Factor.6 W/ C Storage Temperature Range -55 to 5 C Operating Junction Temperature Range -55 to 5 C Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 6.5 C/W Ordering Information AP5GM-HF-3TR RoHS-compliant, halogen-free SO-, shipped on tape and reel (3 pcs/reel) Advanced Power USA 95-3 /
AP5GM-HF-3 N-channel Electrical Specifications at T j =5 C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BS Drain-Source Breakdown Voltage V GS =V, I D =5uA 3 - - V R DS(ON) Static Drain-Source On-Resistance V GS =V, I D =7A - - mω V GS =.5V, I D =5A - - mω V GS(th) Gate Threshold Voltage =V GS, I D =5uA - 3 V g fs Forward Transconductance =V, I D =6A - 5 - S I DSS Drain-Source Leakage Current =3V, V GS =V - - ua =V, V =V, Tj=7 C - - 5 ua I GSS Gate-Source Leakage V GS =±V, =V - - ± na Q g Total Gate Charge I D =6A - 3.5 nc Q gs Gate-Source Charge =V - - nc Q gd Gate-Drain ("Miller") Charge V GS =.5V -.5 - nc t d(on) Turn-on Delay Time =5V - - ns t r Rise Time I D =A - 5 - ns t d(off) Turn-off Delay Time R G =3.3Ω, V GS =V - 9 - ns t f Fall Time R D =5Ω - 5 - ns C iss Input Capacitance V GS =V - 65 pf C oss Output Capacitance =5V - 5 - pf C rss Reverse Transfer Capacitance f=.mhz - 95 - pf GS Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units V SD Forward On Voltage I S =7A, V GS =V - -. V t rr Reverse Recovery Time I S =6A, V GS =V, - 9 - ns Q rr Reverse Recovery Charge di/dt=a/µs - - nc Notes:.Pulse width limited by maximum junction temperature..pulse width <3us, duty cycle < %. 3.Surface mounted on in copper pad of FR board, t <sec; 35 C/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. Advanced Power USA /
AP5GM-HF-3 P-channel Electrical Specifications at T j =5 C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BS Drain-Source Breakdown Voltage V GS =V, I D =-5uA -3 - - V R DS(ON) Static Drain-Source On-Resistance V GS =-V, I D =-5.3A - - 5 mω V GS =-.5V, I D =-.A - - 9 mω V GS(th) Gate Threshold Voltage =V GS, I D =-5uA - - -3 V g fs Forward Transconductance =-V, I D =-5A - 5 - S I DSS Drain-Source Leakage Current =-3V, V GS =V - - - ua =-V, V =V, Tj=7 C - - -5 ua I GSS Gate-Source Leakage V GS =±V, =V - - ± na Q g Total Gate Charge I D =-5A - 3 nc Q gs Gate-Source Charge =-5V -.7 - nc Q gd Gate-Drain ("Miller") Charge V GS =-.5V -.5 - nc t d(on) Turn-on Delay Time =-5V - 6.7 - ns t r Rise Time I D =-A - - ns t d(off) Turn-off Delay Time R G =3.3Ω, V GS =-V - - ns t f Fall Time R D =5Ω - - ns C iss Input Capacitance V GS =V - 595 95 pf C oss Output Capacitance =-5V - - pf C rss Reverse Transfer Capacitance f=.mhz - 75 - pf GS Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units V SD Forward On Voltage I S =-.6A, V GS =V - - -. V t rr Reverse Recovery Time I S =-5A, V GS =V, - - ns Q rr Reverse Recovery Charge di/dt=a/µs - - nc Notes:.Pulse width limited by maximum junction temperature..pulse width <3us, duty cycle < %. 3.Surface mounted on in copper pad of FR board, t <sec; 35 C/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. Advanced Power USA 3/
AP5GM-HF-3 Typical N-channel Electrical Characteristics I D, Drain Current (A) 6 T A =5 C V.V 6.V 5.V V G =.5V I D, Drain Current (A) 6 T A =5 C V.V 6.V 5.V V G =.5V 6, Drain-to-Source Voltage (V) 6, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig. Typical Output Characteristics I D = 5A. I D =7A V G =V R DS(ON (mω) 3 T A = 5 o C Normalized R DS(ON).. 6 V GS, Gate-to-Source Voltage (V).6-5 5 5 T j, Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage. Fig. Normalized On-Resistance vs. Junction Temperature. I S (A) 6 T j =5 o C T j =5 o C Normalized V GS(th) (V)...6...6... V SD, Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode. -5 5 5 T j, Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature Advanced Power USA /
Typical N-channel Electrical Characteristics (cont.) V GS, Gate to Source Voltage (V) 6 I D =6A =V C (pf) 6 AP5GM-HF-3 f=.mhz C iss C oss 3 6 9 5 Q G, Total Gate Charge (nc) C rss 5 9 3 7 5 9, Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig. Typical Capacitance Characteristics I D (A). T A =5 o C Single Pulse us ms ms ms s DC Normalized Thermal Response (R thja ). Duty factor=.5...5.. Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thja + T a R thja=35 C/W.., Drain-to-Source Voltage (V)..... t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig. Effective Transient Thermal Impedance 9% V G.5V Q G Q GS Q GD % V GS t d(on) t r t d(off) t f Charge Q Fig. Switching Time Waveforms Fig. Gate Charge Waveform Advanced Power USA 5/
AP5GM-HF-3 Typical P-channel Electrical Characteristics -I D, Drain Current (A) 3 T A =5 o C - V - 7.V - 5.V -.5V V G = - 3.V -I D, Drain Current (A) 3 T A = 5 o C - V - 7.V - 5.V -.5V V G = - 3.V 3 5 6 -, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 6 -, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 7.6 I D = -. A T A =5 o C I D = -5.3 A V G = - V. 6 R DS(ON) (mω) 5 Normalized R DS(ON)... 3.6 6-5 5 5 -V GS, Gate-to-Source Voltage (V) T j, Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage Fig. Normalized On-Resistance vs. Junction Temperature. -I S (A) 6 T j =5 o C T j =5 o C Normalized -V GS(th) (V).....6... -V SD, Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode.6-5 5 5 T j, Junction Temperature ( o C) Fig 6. Gate Threshold Voltage vs. Junction Temperature Advanced Power USA 6/
Typical P-channel Electrical Characteristics (cont.) AP5GM-HF-3 f=.mhz C iss -V GS, Gate to Source Voltage (V) 6 I D = -5.3A = -5V C (pf) C oss C rss.... 6.. Q G, Total Gate Charge (nc) Fig 7. Gate Charge Characteristics 5 9 3 7 5 9 -, Drain-to-Source Voltage (V) Fig. Typical Capacitance Characteristics -I D (A). T A =5 o C Single Pulse us ms ms ms s DC Normalized Thermal Response (R thja ). Duty factor=.5...5.. Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thja + T a R thja=35 o C/W.. -, Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area..... t, Pulse Width (s) Fig. Effective Transient Thermal Impedance 9% V G -.5V Q G % V GS Q GS Q GD t d(on) t r t d(off) t f Charge Q Fig. Switching Time Waveforms Fig. Gate Charge Waveform Advanced Power USA 7/
AP5GM-HF-3 Package Dimensions: SO- D Millimeters SYMBOLS MIN NOM MAX e 7 6 5 3 B E E A.35.55.75 A...5 B.33..5 C.9..5 D..9 5. E 3. 3.9. E 5. 6.5 6.5 L.3.7.7 θ.. e.7 TYP A A DETAIL A L θ c. All dimensions are in millimeters.. Dimensions do not include mold protrusions. DETAIL A Marking Information: 5GM YWWSSS Product: AP5 Package: GM = RoHS-compliant SO- Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence Advanced Power USA /