Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance N-channel MOSFET BS R DS(on) 5V.5A < 1.5W D-PAK I-PAK Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage S 5 V Gate-Source Voltage ±3 V Continuous Drain Current T C = 25.5 A T C = 1 3.27 A Pulsed Drain Current (Note 1) M 18 A Single Pulse Avalanche Energy (Note 2) E AS 25 mj Repetitive Avalanche Current (Note 1) I AR.5 A Repetitive Avalanche Energy (Note 1) E AR 9.8 mj Power Dissipation T C = 25 98. W P D Derate above 25.78 W/ Peak Diode Recovery dv/dt (Note 3) dv/dt.5 V/ns Operating Junction and Storage Temperature Range T J, T STG -55~15 Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds * Limited only by maximum junction temperature Thermal Characteristics Device Package Marking Remark D-PAK RoHS I-PAK RoHS T L 3 Parameter Symbol Value Unit Maximum Thermal resistance, Junction-to-Case R qjc 1.27 /W Maximum Thermal resistance, Junction-to-Ambient R qja 11 /W 1/6
Electrical Characteristics : T C =25, unless otherwise noted OFF Parameter Symbol Test condition Min Typ Max Units Drain-Source Breakdown Voltage BS = V, = 25 µa 5 -- -- V Zero Gate Voltage Drain Current SS Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=22.6mH, I AS =.5A, V DD = 5V, R G = 25Ω, Starting T J = 25 3 I SD.5A, di/dt 2A/µs, V DD B, Starting T J = 25. Pulse Test :Pulse width 3µs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics = 5 V, = V -- -- 1 µa = V, T C = 125 C -- -- 1 µa Forward Gate-Source Leakage Current I GSSF = 3 V, = V -- -- 1 µa Reverse Gate-Source Leakage Current I GSSR = -3 V, = V -- -- -1 µa ON Gate Threshold Voltage (th) =, = 25 µa 3 -- 5 V Drain-Source On-Resistance R DS(on) = 1 V, = 2.25 A -- 1.2 1.5 W Forward Transconductance (Note ) g FS = 3 V, = 2.25 A -- 6 -- S DYNAMIC Input Capacitance C iss = 25 V, = V, -- 65 -- pf Output Capacitance C oss f = 1. MHz -- 78 -- pf Reverse Transfer Capacitance C rss -- 11 -- pf SWITCHING Turn-On Delay Time (Note,5) t d(on) V DD = 25 V, =.5 A, -- 19 -- ns Turn-On Rise Time (Note,5) t r R G = 25 Ω -- 28 -- ns Turn-Off Delay Time (Note,5) t d(off) -- 9 -- ns Turn-Off Fall Time (Note,5) t f -- 19 -- ns Total Gate Charge (Note,5) Q g = V, =.5 A, -- 15 -- nc Gate-Source Charge (Note,5) Q gs = 1 V -- 3 -- nc Gate-Drain Charge (Note,5) Q gd -- 7 -- nc SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current I S ---- -- --.5 A I SM ---- -- -- 18 A Drain-Source Diode Forward Voltage V SD = V, I S =.5 A -- -- 1.5 V Reverse Recovery Time (Note ) t rr = V, I S =.5 A -- 26 -- ns Reverse Recovery Charge (Note ) Q rr di F / dt = 1 A/µs -- 1. -- µc 2/6
Capacitance [pf] Gate-Source Voltage, Drain-Source On-Resistance R DS(ON) [Ω] Reverse Drain Current, R Drain Current, Drain Current, 16 12 Top =15.V 1.V 9.V 8.V 7.V 6.V Bottom 5.5V 1 = 3V 25 μs Pulse Test 15 8 25-55 1 1. T C = 25 2. 25μs Pulse Test 5 1 15 2 Drain-Source Voltage,.1 2 6 8 1 Gate-Source Voltage, 2.5 T J = 25 16 = V 25μs Pulse Test 2. 12 = 1V 1.5 8 15 25 = 2V 1..5 3 6 9 12 15 Drain Current,..5 1. 1.5 2. Source-Drain Voltage, V SD 12 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd 12 =.5A 9 C rss = C gd C iss = V f = 1 MHz 1 8 = 1V = 25V = V 6 C oss 6 3 C rss 2 1-1 1 1 1 Drain-Source Voltage, 5 1 15 2 Total Gate Charge, Q G [nc] 3/6
Drain Current, Transient thermal impedance Z thjc (t) Drain Current, Gate Threshold Voltage V TH, (Normalized) Drain-Source Breakdown Voltage BS, (Normalized) Drain-Source On-Resistance R DS(ON), (Normalized) 1.2 3. 1.15 = V = 25 μa 2.5 = 1 V = 2.25 A 1.1 1.5 2. 1. 1.5.95 1..9.85.5.8-8 - 8 12 16 Junction Temperature,T J [ o C]. -8-8 12 16 Junction Temperature, T J [ o C] 5 1.5 3 1. 2.5 1 25 5 75 1 125 15 Case Temperature, T [ C ] = = 25 A. -8-8 12 16 Junction Temperature, T J [ o C] 1 2 Operation in This Area is Limited by R DS(on) 1 1 1 us 1 1 1 ms 1 us 1 Duty=.5 1 ms 1 ms 1 DC 1-1 T C = 25 o C T J = 15 o C Single Pulse 1-2 1 1 1 1 2 1 3 Drain-Source Voltage, 1-1 1-2.2.1.5.2.1 single pulse 1-5 1-1 -3 1-2 1-1 1 1 1 Pulse Width, t [sec] PDM t T Duty = t/t Z thjc (t) = 1.27 /W Max. /6
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TO-251 (I-PAK) MECHANICAL DATA Disclaimer : Global Power Technologies Group reserves the right to make changes without notice to products herein to improve reliability, performance, or design. The information given in this document is believed to be accurate and reliable. However, it shall in no event be regarded as a guarantee of conditions and characteristics. With respect to any information regarding the application of the device, Global Power Technologies Group hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of patent rights of any third party. 6/6