N-Channel 30-V (D-S) 175 C MOSFET
|
|
- Edith Hodges
- 6 years ago
- Views:
Transcription
1 N-Channel 3-V (D-S) 75 C MOSFET SUP/SUB85N3-4P PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) V GS = V 85 a V GS = 4.5 V 85 a TO-22AB FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature TO-263 (D 2 PAK) % R g Tested D TO-263 (D 2 PAK) G DRAIN connected to TAB G D S Top View SUP85N3-4P G D S Top View SUB85N3-4P S N-Channel MOSFET Ordering Information: SUP85N3-4P (TO-22AB) SUB85N3-4P (TO-263, D 2 PAK) SUB85N3-4P E3 (TO-263, D 2 PAK, Lead Free) ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V DS 3 Gate-Source Voltage V GS 2 V Continuous Drain Current (T J = 75 C) T C = 25 C 85 a T C = C 85 a A Pulsed Drain Current M 24 Avalanche Current I AR 75 Repetitive Avalanche Energy b L =. mh E AR 28 mj T C = 25 C (TO-22AB and TO-263) 66 c Maximum Power Dissipation b T A = 25 C (TO-263) d P D 3.75 W Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C THERMAL RESISTANCE RATINGS Junction-to-Ambient t t Parameter Symbol Limit Unit PCB Mount (TO-263) d Free Air (TO-22AB) 4 R thja 62.5 C/W Junction-to-Case R thjc.9 Notes a. Package limited. b. Duty cycle %. c. See SOA curve for voltage derating. d. When mounted on square PCB (FR-4 material). S-4 Rev. C, 26-Jan-4
2 SUP/SUB85N3-4P SPECIFICATIONS (T J =25 C UNLESS OTHERWISE NOTED) Static Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V (BR)DSS V DS = V, = 25 A 3 Gate-Threshold Voltage V GS(th) V DS = V GS, = 25 A 2 3 V Gate-Body Leakage I GSS V DS = V, V GS = 2 V na V DS = 3 V, V GS = V Zero Gate Voltage Drain Current SS V DS = 3 V, V GS = V, T J = 25 C 5 A V DS = 3 V, V GS = V, T J = 75 C 25 On-State Drain Current a (on) V DS 5 V, V GS = V 2 A V GS = V, = 3 A V GS = V, = 3 A, T J = 25 C.65 Drain-Source On-State Resistance a r DS(on) V GS = V, = 3 A, T J = 75 C.8 V GS = 4.5 V, = 2 A.55.7 Forward Transconductance a g fs V DS = 5 V, = 3 A 3 S Dynamic b Input Capacitance C iss 45 Output Capacitance C oss V GS = V, V DS = 25 V, f = MHz 38 pf Reverse Transfer Capacitance C rss 65 Gate Resistance d R g Total Gate Charge b Q g 7 9 Gate-Source Charge b Q gs V DS = 5 V, V GS = V, = 85 A 5 nc Gate-Drain Charge b Q gd DS, GS, D 6 Turn-On Delay Time b t d(on) 5 23 Rise Time b t r V DD = 5 V, R L = Turn-Off Delay Time b t d(off) 85 A, V GEN = V, R g = Fall Time b t f ns Source-Drain Diode Ratings and Characteristics (T C = 25 C) c Continuous Current I S 85 Pulsed Current I SM 24 A Forward Voltage a V SD I F = 85 A, V GS = V..5 V Reverse Recovery Time t rr 42 7 ns Peak Reverse Recovery Current I RM I F = 85 A, di/dt = A/ s.4 2. A Reverse Recovery Charge Notes a. Pulse test; pulse width 3 s, duty cycle 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. d. TO-263 (D 2 PAK) only. Q rr.3.6 C 2 S-4 Rev. C, 26-Jan-4
3 SUP/SUB85N3-4P TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) 25 Output Characteristics V GS = thru 6 V 5 V 25 Transfer Characteristics V 5 T C = 25 C 5 2, 3 V C 55 C V DS Drain-to-Source Voltage (V) V GS Gate-to-Source Voltage (V) 8 Transconductance.8 On-Resistance vs. Drain Current T C = 55 C Transconductance (S) g fs C 25 C r DS(on) On-Resistance ( ) V GS = 4.5 V V GS = V Capacitance 2 Gate Charge C Capacitance (pf) C iss C oss Gate-to-Source Voltage (V) V GS V DS = 5 V = 85 A C rss V DS Drain-to-Source Voltage (V) Q g Total Gate Charge (nc) S-4 Rev. C, 26-Jan-4 3
4 SUP/SUB85N3-4P TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) 2. On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage.6 V GS = V = 3 A r DS(on) On-Resistance (Normalized) Source Current (A) I S T J = 5 C T J = 25 C T J Junction Temperature ( C) V SD Source-to-Drain Voltage (V) Avalanche Current vs. Time 45 Drain Source Breakdown vs. Junction Temperature (a) av I AV T A = 5 C I AV T A = 25 C V(BR)DSS (V) 4 35 = 25 A t in (Sec) T J Junction Temperature ( C) 4 S-4 Rev. C, 26-Jan-4
5 SUP/SUB85N3-4P THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area Limited by r DS(on) 8 s s 6 4 ms ms ms dc 2 T C = 25 C Single Pulse T C Ambient Temperature ( C).. V DS Drain-to-Source Voltage (V) 2 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse Square Wave Pulse Duration (sec) S-4 Rev. C, 26-Jan-4 5
6 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8
N-Channel 75-V (D-S) 175 C MOSFET
New Product SUP/SUB85N8-8 N-Channel 75-V (D-S) 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) (A) 75.8 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View SUP85N8-8 G D S Top View SUB85N8-8
More informationNew Product TO-263. Top View SUB70N03-09BP. Parameter Symbol Limit Unit. Parameter Symbol Limit Unit
New Product SUP/SUB7N3-9BP N-Channel 3-V (D-S), 75 C, MOSFET PWM Optimized V (BR)DSS (V) r DS(on) ( ) (A) 3.9 @ V GS = V 7 a.3 @ V GS = 4.5 V 6 TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View
More informationN-Channel 60-V (D-S), 175 C MOSFET
N-Channel -V (D-S), 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) (A).8 TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUPN6-8 G D S Top View SUBN6-8 S N-Channel MOSFET Parameter Symbol Limit Unit Drain-Source
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUDN-5L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) Q g (Typ). @ V GS = V.5.5 @ V GS =.5 V. 7.7 TO-5 D Drain Connected to Tab G G D S Order Number: Top View SUDN-5L SUDN-5L
More informationP-Channel 55-V (D-S), 175 C MOSFET
New Product SUP/SUB75P5-8 P-Channel 55-V (D-S), 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) I D (A) 55.8 75 a TO-22AB S TO-263 G DRAIN connected to TAB G D S Top View SUP75P5-8 G D S Top View SUB75P5-8 D P-Channel
More informationN-Channel 40-V (D-S), 175 C MOSFET
N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-9H PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A) c Q g (Typ) 4.9 at V GS = V 5 55 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature High Threshold Voltage
More informationN-Channel 30-V (D-S) MOSFET
Si36DS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A).57 @ V GS = V 3.5 3.9 @ V GS =.5 V. FEATURES TrenchFET Power MOSFET % R g Tested - TO-36 (SOT-3) G 3 D S Top View Si36DS (A6)*
More informationP-Channel 40 V (D-S), 175 C MOSFET
P-Channel 4 V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETs 75 C Junction Temperature Compliant
More informationSUD40N06-25L. N-Channel 60-V (D-S), 175 C MOSFET, Logic Level. Vishay Siliconix FEATURES PRODUCT SUMMARY
N-Channel 6-V (D-S), 75 C MOSFET, Logic Level SUD4N6-25L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.22 @ V GS = V 3 6.25 @ V GS = 4.5 V 3 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature
More informationN-Channel 60 V (D-S), 175 C MOSFET, Logic Level
N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature
More informationN-Channel 60-V (D-S), 175 C MOSFET
N-Channel -V (D-S), 75 C MOSFET Si4559EY V DS (V) r DS(on) ( ) (A) N-Channel P-Channel.55 @ V GS = V 4.5.75 @ V GS = 4.5 V 3.9. @ V GS = V 3..5 @ V GS = 4.5 V.8 D D S SO-8 S 8 D G 7 D S 3 D G 4 5 D G G
More informationN-Ch 30-V (D-S), 175 C, MOSFET PWM Optimized. New Product. 50 A Continuous Drain Current (T J = 175 C) I D T C = 100 C
SUD5N3-P N-Ch 3-V (D-S), 75 C, MOSFET PWM Optimized New Product 3. @ V GS = V 5 A.5 @ V GS = 4.5 V 45 TO-5 D Drain Connected to Tab G G D S Top View Order Number: SUD5N3-P S N-Channel MOSFET Drain-Source
More informationN-Channel 30-V (D-S) MOSFET with Sense Terminal
SUM5N3-3LC N-Channel 3-V (D-S) MOSFET with Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) (Ω) (A).3 at V GS = V 5 a 3.7 at V GS =.5 V 8 a D PAK-5 FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode
More informationP-Channel 40 V (D-S) 175 C MOSFET
P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC
More informationP-Channel 100 V (D-S) MOSFET
SUD9P-95 P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) Q g (Typ.).95 at V GS = - V - 8.8 -.7.2 at V GS = - 4.5 V - 8.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationN-Channel 250 V (D-S) 175 C MOSFET
SUP4N25-6 N-Channel 25 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) (A) Q g (Typ) 25 TO-22AB.6 at V GS = V 4.64 at V GS = 6 V 38.7 95 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature
More informationN-Channel 150-V (D-S) MOSFET
N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power
More informationP-Channel 30-V (D-S), MOSFET
SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUP/SUB85N- PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A).5 at V GS = V.2 at V GS = 4.5 V 85 a FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature Available
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions
More informationAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFET
Automotive Dual N-Channel 6 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 6 R DS(on) (Ω) at V GS = V.55 I D (A) 4.5 Configuration Dual SO-8 D D 2 FEATURES TrenchFET Power MOSFET Package with Low Thermal
More informationN-Channel 30-V (D-S) MOSFET
SiDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).68 at V GS =. V.6 a nc.8 at V GS =. V. TO-6 (SOT-) FEATURES Halogen-free According to IEC 69-- Definition TrenchFET
More informationComplementary N- and P-Channel 40-V (D-S) MOSFET
Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V -
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 6 V (D-S) 75 C MOSFET TO-263 7-Lead D S FEATURES TrenchFET power MOSFET Package with low thermal resistance % R g and UIS tested AEC-Q qualified Material categorization: for definitions
More informationP-Channel 2.5-V (G-S) MOSFET
Si33BDV P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -.9 at V GS = -.7 V - 3.8. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition
More informationAutomotive P-Channel 40 V (D-S) 175 C MOSFET
Automotive P-Channel 4 V (D-S) 75 C MOSFET SQM43EL TO-263 S G S D G Top View D P-Channel MOSFET PRODUCT SUMMARY V DS (V) -4 R DS(on) () at V GS = - V.3 R DS(on) () at V GS = -4.5 V.38 I D (A) -2 Configuration
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested
More informationP-Channel 30 V (D-S) 175 C MOSFET
P-Channel 3 V (D-S) 75 C MOSFET SUB75P3-7, SUP75P3-7 PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.7 at V GS = - V ± 75-3. at V GS = - 4.5 V ± 75 FEATURES Compliant to RoHS Directive 22/95/EC Available
More informationDual P-Channel 2.5-V (G-S) MOSFET
Dual P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).6 at V GS = -.5 V -.7 -. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Definition Compliant to RoHS Directive
More informationAutomotive N-Channel 200 V (D-S) 175 C MOSFET
Automotive N-Channel 2 V (D-S) 75 C MOSFET SQM942E FEATURES TO-263 Top View G D S TrenchFET power MOSFET Package with low thermal resistance AEC-Q qualified % R g and UIS tested Material categorization:
More informationN-Channel 20 V (D-S) MOSFET
SiCDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) e Q g (Typ.).8 at V GS = 4. V 6 a.6 at V GS =. V 6 a 8.8 nc.44 at V GS =.8 V.6 FEATURES Halogen-free According to IEC 649--
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (D-S) MOSFET 3 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) I D (A). at V GS = V. at V GS = V 7.5 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature Low Thermal Resistance Package Available
More informationN-Channel 60-V (D-S) MOSFET
Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-
More informationP-Channel 100-V (D-S) 175 C MOSFET
P-Channel -V (D-S) 75 C MOSFET SUD5P-43L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).43 at V GS = - V - 37-54 nc.48 at V GS = - 4.5 V - 35 FEATURES TrenchFET Power MOSFET Compliant to RoHS
More informationN-Channel 200-V (D-S) 175 C MOSFET
New Product SUM33N26P ishay Siliconix NChannel 2 (DS) 75 C MOSFET PRODUCT SUMMARY (BR)DSS () r DS(on) (Ω) I D (A) Q g (Typ) 2 TO263.59 at GS = 5 33.6 at GS = 33 53 FEATURES TrenchFET Power MOSFETS 5 C
More informationP-Channel 40 V (D-S) 175 C MOSFET
P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC
More informationN- and P-Channel 2.5-V (G-S) MOSFET
N- and P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) (A) N-Channel. at = 4.5 V ± 4.5.4 at =.5 V ± 3.9 P-Channel -.5 at = - 4.5 V ± 3.5.85 at = -.5 V ±.7 FEATURES Halogen-free Option Available
More informationN-Channel 200 V (D-S) 175 C MOSFET
N-Channel 2 V (D-S) 75 C MOSFET SUP942E TO-22AB S D Top View G PRODUCT SUMMARY V DS (V) 2 R DS(on) max. ( ) at V GS = V.52 R DS(on) max. ( ) at V GS = 7.5 V.69 Q g typ. (nc) 58 I D (A) 9 Configuration
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (D-S) MOSFET SUD5N3-12P-GE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a.12 at V GS = 1 V 16.8 3.175 at V GS = 4.5 V 13.9 FEATURES TrenchFET power MOSFET 1 % R g and UIS tested Material
More informationN-Channel 60 V (D-S), MOSFET
N-Channel 6 V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).3 at V GS = V 9. 6 6.5 nc.45 at V GS = 4.5 V 7.6 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationN-Channel 20-V (D-S) MOSFETs
TNT/TS N-Channel -V (D-S) MOSFETs PRODUCT SUMMARY I D (A) V DS (V) r DS(on) ( ) TNT TNTS. @ V GS =.5 V.7..5 @ V GS =.5 V.65. FEATURES BENEFITS APPLICATIONS Low On-Resistance:.9 Low Threshold:.9 V (typ).5-v
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V 7.5 3.3 at V GS = 4.5 V 6.5 FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power MOSFET PWM
More informationP-Channel 30-V (D-S) MOSFET
Si357BDV P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A).5 at V GS = - V - 5. - 3. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Available TrenchFET Power MOSFETs
More informationN-Channel 60-V (D-S) MOSFETs with Zener Gate
VN6L, VNKLS, N-Channel 6-V (D-S) MOSFETs with Zener Gate Part Number V (BR)DSS Min (V) r DS(on) Max ( ) V GS(th) (V) I D (A) VN6L 5 @ V GS = V.8 to 2.5.27 VNKLS 6 5 @ V GS = V.8 to 2.5. 7.5 @ V GS = V.6
More informationP-Channel 8-V (D-S) MOSFET
New Product P-Channel 8-V (D-S) MOSFET Si25ADS PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).4 at V GS = - 4.5 V - 4. - 8.6 at V GS = - 2.5 V -.4 7.8 nc.88 at V GS = -.8 V - 2. FEATURES Halogen-free
More informationAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFET
Automotive Dual N-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D 2 D 4 G 2 3 S 2 2 G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (D-S) MOSFET 3.3 mm Top View PRODUCT SUMMARY PowerPAK 22-8 Dual 3.33 mm D 2 D 2 6 5 4 G Bottom View V DS (V) 3 R DS(on) max. (Ω) at V GS = 4.5 V.22 R DS(on) max. (Ω) at V GS = 2.5 V.26 Q
More informationN-Channel 0 V (D-S) MOSFET
N-Channel V (D-S) MOSFET 66SJ PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.).6 at V GS = V 53 4 nc.9 at V GS = 4.5 V 4 FEATURES TrenchFET II Power MOSFET % R g and UIS Tested APPLICATIONS
More informationP-Channel 30 V (D-S) 175 C MOSFET
P-Channel 3 V (D-S) 75 C MOSFET SUB75P3-7, SUP75P3-7 PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.7 at V GS = - V ± 75-3. at V GS = - 4.5 V ± 75 FEATURES Compliant to RoHS Directive 22/95/EC Available
More informationDual N-Channel 30 V (D-S) MOSFET
Si59BDC Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 6-8 ChipFET (Dual).65 at V GS = V a nc. at V GS =.5 V a S FEATURES Halogen-free According to IEC 69-- Definition
More informationN- and P-Channel 30-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free
More informationDual P-Channel 20-V (D-S) MOSFET
New Product Dual P-Channel 2-V (D-S) MOSFET Si9933CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = -.5 V - - 2 8.9 at V GS = - 2.5 V - FEATURES Halogen-free Option Available
More informationFEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600
DTU5N6 N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.25 at V GS = V 5 6.5 at V GS = 4.5 V 75 FEATURES TrenchFET II Power MOSFET TO-252 D G D S Top View S N-Channel MOSFET ABSOLUTE
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A).95 at V GS = V. 3. at V GS = 4.5 V 9.4 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g Tested APPLICATIONS DC/DC
More informationAutomotive Dual N-Channel 20 V (D-S) 175 C MOSFET
SQ9EEH Automotive Dual N-Channel V (D-S) 75 C MOSFET D 6 SOT-363 SC-7 Dual (6 leads) S 4 G 5 S Top View G 3 D FEATURES TrenchFET power MOSFET AEC-Q qualified % R g tested Typical ESD protection: 8 V Material
More informationN-Channel 40-V (D-S) MOSFET
SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition
More informationAutomotive P-Channel 80 V (D-S) 175 C MOSFET
Automotive P-Channel 8 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) - 8 R DS(on) () at V GS = - 1 V.25 R DS(on) () at V GS = - 4.5 V.31 I D (A) - 5 Configuration Single FEATURES TrenchFET Power MOSFET
More informationFEATURES G D S. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C
N-Channel 6 V (D-S) Super Junction Power MOSFET DTP63SJ PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.35 at V GS = V 3 6.4 at V GS = 4.5 V FEATURES 75 C Junction Temperature TrenchFET II Power MOSFET
More informationN- and P-Channel 30 V (D-S) MOSFET
N- and P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.47 at V GS = V 6..65 at V GS = 4.5 V 5.2 2.75 P-Channel - 3.89 at V GS = - V - 4.3.4 at V GS = -
More informationN- and P-Channel 1.8 V (G-S) MOSFET
Si7DH N- and P-Channel.8 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A). at V GS =. V. N-Channel.8 at V GS =. V.. at V GS =.8 V.. at V GS = -. V -.86 P-Channel -.88 at V GS = -. V -.67.6 at V
More informationDual N-Channel 30 V (D-S) MOSFETs
Dual N-Channel 3 V (D-S) MOSFETs 3 mm mm Top View PRODUCT SUMMARY PowerPAIR 3 x 3 3 mm D Bottom View CHANNEL- CHANNEL-2 V DS (V) 3 3 R DS(on) max. ( ) at V GS = V.285.5 R DS(on) max. ( ) at V GS = 4.5
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a, e Q g (Typ.). at V GS = V at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View Pin Top View FEATURES APPLICATIONS D 3 4 8 7 5 G Pin
More informationN-Channel 100 V (D-S) MOSFET
Si9DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 5 D FEATURES
More informationAutomotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) -6 R DS(on) (Ω) at V GS = - V.93 R DS(on) (Ω) at V GS = -4.5 V.33 I D (A) - Configuration Single TO-22AB FEATURES TrenchFET power MOSFET
More informationComplementary 20 V (D-S) MOSFET
SiDL Complementary V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).9 at V GS =. V. N-Channel.7 at V GS =.7 V..7. at V GS =. V..99 at V GS = -. V -. P-Channel -.6 at V GS = -.7 V
More informationDual N-Channel 20-V (D-S) MOSFET
Si99CDY Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V nc SO- FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power
More informationPower MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
More informationAutomotive N-Channel 300 V (D-S) 175 C MOSFET
Automotive N-Channel 300 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 300 R DS(on) (Ω) at V GS = V 0.330 I D (A) Configuration Single TO-252 D FEATURES TrenchFET power MOSFET Package with low thermal
More informationP-Channel 1.8 V (G-S) MOSFET
Si7DL P-Channel. V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).9 at V GS = -.5 V ±.9 -.5 at V GS = -.5 V ±.7.5 at V GS = -. V ±. FEATURES Halogen-free According to IEC 9-- Definition TrenchFET
More informationN-Channel 250 V (D-S) 175 C MOSFET
N-Channel 25 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.) 25.35 at V GS = V 63.325 at V GS = 7.5 V 62 TO-22AB Top View S D G Ordering Information: -GE3 (lead (Pb)-free
More informationAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFET
Automotive Dual P-Channel 3 V (D-S) 75 C MOSFET D 6 Marking Code: 9B TSOP-6 Dual D S 5 G Top View S 3 G FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for
More informationDual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si468DY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) Channel- 3 Channel-2 3.7 at V GS = V 8..95 at V GS = 4.5 V 7.5. at V GS = V 5.2.5
More informationDual P-Channel 60-V (D-S) 175 MOSFET
Dual P-Channel 6-V (D-S) 75 MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).2 at V GS = - V - 3. - 6.5 at V GS = - 4.5 V - 2.8 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.) 3 2.5 mm.29 at V GS = V 4.5 a 3 nc.25 at V GS = V 4.5 a.33 at V GS = 4.5 V 4.5 a PowerPAK SC-7-L Dual 2.5 25
More informationDual P-Channel 20-V (D-S) MOSFET
New Product Dual P-Channel 2-V (D-S) MOSFET Si93CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) - 2.92 at V GS = - V - 8.33 at V GS = -.5 V - 8 2 SO-8 S 8 D G 2 7 D FEATURES Halogen-free
More informationAutomotive P-Channel 40 V (D-S) 175 C MOSFET
Automotive P-Channel 4 V (D-S) 75 C MOSFET SQ39ES PRODUCT SUMMARY V DS (V) - 4 R DS(on) ( ) at V GS = - V.75 R DS(on) ( ) at V GS = - 4.5 V.45 I D (A) - 4.6 Configuration Single FEATURES Halogen-free According
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.).88 at V GS = V 3 nc.95 at V GS =7.5 V DFN 3x3 EP Top View Bottom View Pin Top View FEATURES TrenchFET Power MOSFET
More informationAutomotive P-Channel 12 V (D-S) 175 C MOSFET
Automotive P-Channel 2 V (D-S) 75 C MOSFET SQJ4EP 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for definitions
More informationAutomotive N-Channel 80 V (D-S) 175 C MOSFET
Automotive N-Channel 8 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 8 R DS(on) () at V GS = V.3 I D (A) 5 Configuration Single Package PowerPAK 8 x 8L PowerPAK 8 x 8L Single FEATURES TrenchFET power MOSFET
More informationDual P-Channel 40 V (D-S) MOSFET
Dual P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) d Q g (Typ.) -.27 at V GS = - V - 8.3 at V GS = -.5 V - 7.2 2.7 nc SO-8 S 8 D G 2 7 D S 2 3 D 2 G 2 5 D 2 FEATURES Halogen-free
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET SUA76E PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.).6 at V GS = V 56.6.7 at V GS = 7.5 V 54.4 53.5 nc Thin-Lead TO-22 FULLPAK FEATURES ThunderFET power MOSFET Q
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) 5.232 at V GS = V 36.8.272 at V GS = 7.5 V 34 6. nc PowerPAK SO-8L Single FEATURES ThunderFET technology optimizes
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) 3. at V GS = V 2..7 at V GS =.5 V 5. nc SO-8 S 8 D G 2 7 D FEATURES Halogen-free According to IEC 29-2-2 Definition
More informationFEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C
N-Channel 6 V (D-S) Super Junction Power MOSFET DTK63SJ PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.35 at V GS = V 3 6.42 at V GS = 4.5 V FEATURES 75 C Junction Temperature TrenchFET II Power MOSFET
More informationAutomotive P-Channel 200 V (D-S) 175 C MOSFET
Automotive P-Channel 2 V (D-S) 75 C MOSFET SQJ43AEP 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for
More informationN- and P-Channel 20-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A). at V GS =. V. N-Channel. at V GS =. V.. at V GS =. V.. at V GS = -. V -. P-Channel -. at V GS = -. V -.. at V GS = -.V -. FEATURES
More informationP-Channel 20-V (D-S) MOSFET with Schottky Diode
P-Channel -V (D-S) MOSFET with Schottky Diode Si3853DV PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = -.5 V ±.8 -.3 at V GS = -.5 V ±.3 FEATURES Halogen-free According to IEC 9-- Definition LITTLE
More informationPower MOSFET FEATURES. IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single D HVMDIP G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead
More informationComplementary 30 V (G-S) MOSFET
Si39DL Complementary 3 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) ( ) I D (A) N-Channel 3.8 at V GS = V 3.7 at V GS =. V. P-Channel - 3.9 at V GS = - V -..7 at V GS = -. V -.33 FEATURES TrenchFET Power MOSFET
More informationN-Channel 40 V (D-S) 175 C MOSFET
N-Channel 4 V (D-S) 75 C MOSFET 6.5 mm PRODUCT SUMMARY PowerPAK SO-8L Single Top View 5.3 mm V DS (V) 4 R DS(on) max. ( ) at V GS = V.265 R DS(on) max. ( ) at V GS = 4.5 V.36 Q g typ. (nc) 23 I D (A) a
More informationAutomotive N-Channel 100 V (D-S) 175 C MOSFET
Automotive N-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) at V GS = V.38 I D (A) 2 Configuration TO-263 Single D FEATURES TrenchFET Power MOSFET Package with Low Thermal Resistance
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant
More informationAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFET
Automotive Dual N-Channel 4 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 4 R DS(on) ( ) at V GS = V.35 R DS(on) ( ) at V GS = 4.5 V.48 I D (A) 8 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q
More informationDual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si483CDY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) Channel- 3 Channel-2 3.2 at V GS = V 8..25 at V GS = 4.5 V 8..2 at V GS = V 8..25
More informationAutomotive N-Channel 100 V (D-S) 175 C MOSFET
Automotive N-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () at V GS = V.34 R DS(on) () at V GS = 4.5 V.4 I D (A) 35 Configuration Single Package PowerPAK 8 x 8L PowerPAK 8 x 8L Single
More informationAutomotive N-Channel 300 V (D-S) 175 C MOSFET
Automotive N-Channel 300 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 300 R DS(on) (Ω) at V GS = 0 V 0.097 I D (A) 35 Configuration Single Package TO-263 D TO-263 FEATURES TrenchFET power MOSFET Package
More informationDual N-Channel 30 V (D-S) MOSFETs
Dual N-Channel 3 V (D-S) MOSFETs PRODUCT SUMMARY Channel- 3 Channel-2 3 V DS (V) R DS(on) ( ) (Max.) I D (A) Q g (Typ.).2 at V GS = V 6 a 6.8 nc.5 at V GS =.5 V 6 a.37 at V GS = V 28 a 32 nc.5 at V GS
More informationAutomotive N-Channel 100 V (D-S) 175 C MOSFET
Automotive N-Channel V (D-S) 75 C MOSFET SQM76EL PRODUCT SUMMARY V DS (V) R DS(on) () at V GS = V.59 R DS(on) () at V GS = 4.5 V.8 I D (A) 75 Configuration Single Package TO-263 D TO-263 FEATURES TrenchFET
More informationCommon - Drain Dual N-Channel 30 V (S1-S2) MOSFET
SiSFDN Common - Drain Dual N-Channel 3 V (S-S2) MOSFET 3.3 mm Top View PowerPAK 22-8SCD S S 8 S 2 7 S 2 6 5 3.3 mm PRODUCT SUMMARY V SS2 (V) 3 R SS2(on) max. () at V GS = V.5 R SS2(on) max. () at V GS
More informationPower MOSFET. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ± 30 T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY V DS (V) 600 R DS(on) ( ) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single G D 2 PAK (TO-263) D S Note a. See device orientation. G N-Channel
More information