N-Channel 200-V (D-S) 175 C MOSFET

Transcription

1 New Product SUM33N26P ishay Siliconix NChannel 2 (DS) 75 C MOSFET PRODUCT SUMMARY (BR)DSS () r DS(on) (Ω) I D (A) Q g (Typ) 2 TO at GS = at GS = FEATURES TrenchFET Power MOSFETS 5 C Junction Temperature % UIS and R g Tested APPLICATIONS Power Supply Lighting Industrial D RoHS COMPLIANT G G D S Top iew Ordering Information: SUM33N26PE3 (Lead (Pb)free) S NChannel MOSFET ABSOLUTE MAXIMUM RATINGS T C =, unless otherwise noted Parameter Symbol Limit Unit DrainSource oltage DS 2 GateSource oltage GS ± 25 T C = 33 Continuous Drain Current (T J = 75 C) I D T C = C 2.8 A Pulsed Drain Current I DM 8 Single Pulse Avalanche Current I AS 2 L =. mh Single Pulse Avalanche Energy a E AS 2 mj T C = Maximum Power Dissipation a 56 b P D W T A = c 3.2 Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit JunctiontoAmbient (PCB Mount) c R thja 4 C/W JunctiontoCase (Drain) R thjc.8 Notes: a. Duty cycle %. b. See SOA curve for voltage derating. c. When Mounted on " square PCB (FR4 material). Document Number: 7429 S6229Rev. A, 3Oct6

2 SUM33N26P ishay Siliconix SPECIFICATIONS T J =, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static DrainSource Breakdown oltage (BR)DSS DS =, I D = 25 µa 2 Gate Threshold oltage GS(th) DS = GS, I D = 25 µa DS =, GS = ± 2 ± GateBody Leakage I GSS DS =, GS = ± 25 ± 3 Zero Gate oltage Drain Current I DSS DS = 2, GS =, T J = C 25 µa DS = 2, GS = DS = 2, GS =, T J = 5 C 25 OnState Drain Current a I D(on) DS, GS = 4 A Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. GS =, I D = 2 A.49.6 DrainSource OnState Resistance a GS = 5, I D = 2 A r DS(on) Ω GS =, I D = 2 A, T J = C. GS =, I D = 2 A, T J = 5 C.44 Forward Transconductance a g fs DS = 5, I D = 2 A 25 S Dynamic b Input Capacitance C iss GS =, DS = 25, f = MHz 2735 Output Capacitance C oss 27 pf Reverse Transfer Capacitance C rss 7 Total Gate Charge c DS =, GS = 5, I D = 5 A 75 3 Q g 53 8 nc GateSource Charge c Q gs DS =, GS =, I D = 5 A 4 GateDrain Charge c Q gd 7.5 Gate Resistance R g f = MHz.2.8 Ω TurnOn Delay Time c t d(on) 6 25 Rise Time c t r DD =, R L = 2 Ω 7 26 TurnOff Delay Time c t d(off) I D 5 A, GEN =, R g = Ω 26 4 ns Fall Time c t f 9 8 SourceDrain Diode Ratings and Characteristics (T C = ) b Continuous Current I S 33 Pulsed Current I SM 8 A Forward oltage a SD I F = 2 A, GS =.86.5 Reverse Recovery Time t rr 4 7 ns Peak Reverse Recovery Current I RM(REC) 8 2 A Reverse Recovery Charge Q rr I F = 4 A, di/dt = A/µs µc Reverse Recovery Fall Time t a 82 Reverse Recovery Rise Time t b 32 ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. na 2 Document Number: 7429 S6229Rev. A, 3Oct6

3 SUM33N26P ishay Siliconix TYPICAL CHARACTERISTICS, unless noted 8 8 GS = 5, 2,, 8, 6 64 (A) Drain Current I D I D Drain Current (A) T C = C DS DraintoSource oltage () Output Characteristics GS GatetoSource oltage () Transfer Characteristics 2.8 Transconductance (S) g f s T C = 55 C Resistance (Ω) n O r DS(on ) GS = GS = I D Drain Current (A) Transconductance I D Drain Current (A) OnResistance vs. Drain Current 38 I D = 2 A OnResistance (Ω) r D S(on) C Capacitance (pf) C rss C iss C oss GS GatetoSource oltage () OnResistance vs. GatetoSource oltage DS DraintoSource oltage () Capacitance Document Number: 7429 S6229Rev. A, 3Oct6 3

4 SUM33N26P ishay Siliconix TYPICAL CHARACTERISTICS, unless noted GatetoSource oltage () DS = 5,, 5 I D = 5 A r D S(on ) O n Resistance (Normalized) I D = 2 A GS = GS = 5 G S Q g Total Gate Charge (nc) Gate Charge T J Junction Temperature ( C) OnResistance vs. Junction Temperature.7.2 Source Current (A). T J =5 C T J = ) e ( c n a r I S i a GS(th ) I D = 25 µa I D = 5 ma SD SourcetoDrain oltage SourceDrain Diode Forward oltage T J Temperature ( C) Threshold oltage I D = ma (BR)DSS (normalized) A I Dav 5 C T J Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature..... t av (Sec) Single Pulse Avalanche Current Capability vs. Time 4 Document Number: 7429 S6229Rev. A, 3Oct6

5 SUM33N26P ishay Siliconix THERMAL RATINGS 4 *Limited by r DS (on) 32 µs I D Drain Current (A) 24 6 I D Drain Current (A) T C = Single Pulse ms ms 8 ms DC T C Case Temperature ( C) Maximum Drain Curent vs. Case Temperature Duty Cycle =.5.. DS DraintoSource oltage () * GS > minimum GS at which r DS (on) isspecified Safe Operating Area Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, JunctiontoCase ishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: 7429 S6229Rev. A, 3Oct6 5

6 Legal Disclaimer Notice ishay Disclaimer All product specifications and data are subject to change without notice. ishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. ishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify ishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of ishay. The products shown herein are not designed for use in medical, lifesaving, or lifesustaining applications unless otherwise expressly indicated. Customers using or selling ishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify ishay for any damages arising or resulting from such use or sale. Please contact authorized ishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8Jul8