7MBR5VB1 IGBT MODULE (V series) 12V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC= C unless otherwise specified) Items Symbols Conditions Maximum ratings Units CollectorEmitter voltage VCES 12 V GateEmitter voltage VGES ±2 V IC Continuous Tc=1 C 5 Collector current Icp 1ms TC= C 1 IC 5 A Ic pulse 1ms 1 Collector power dissipation PC 1 device 2 W CollectorEmitter voltage VCES 12 V GateEmitter voltage VGES ±2 V Collector current IC Continuous TC= C 35 ICP 1ms TC= C 7 A Collector power dissipation PC 1 device 21 W Repetitive peak reverse voltage (Diode) VRRM 12 V Repetitive peak reverse voltage VRRM 16 V Average output current IO 5Hz/6Hz, sine wave 5 A Surge current (NonRepetitive) IFSM 1ms, Tj=15 C 36 A I 2 t (NonRepetitive) I 2 t half sine wave 64 A 2 s Junction temperature Tj Inverter, Brake 1 Converter 15 Operating junci temperature Inverter, Brake 15 Tjop (under switching conditions) Converter 15 C Case temperature TC 1 Storage temperature Tstg 4 ~ +1 between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) AC : 1min. VAC Screw torque Mounting (*3) M5 3.5 N m Inverter Brake Converter Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.53.5 Nm (M5) 1 139a MARCH 214
7MBR5VB1 Elecical characteristics (at Tj= C unless otherwise specified) Items Symbols Conditions Inverter Characteristics min. typ. max. Zero gate voltage collector current ICES VGE = V, VCE = 12V 1. ma GateEmitter leakage current IGES VGE = V, VGE = ±2V 2 na GateEmitter threshold voltage VGE (th) VCE = 2V, IC = 5mA 6. 6.5 7. V CollectorEmitter saturation voltage VCE (sat) (terminal) VCE (sat) (chip) VGE = 15V IC = 5A VGE = 15V IC = 5A Tj= C 2.2 2.65 Tj=1 C 2.55 Tj=15 C 2.6 Tj= C 1.5 2.3 Tj=1 C 2.2 Tj=15 C 2. Internal gate resistance Rg(int) 4 Ω Input capacitance Cies VCE = 1V, VGE = V, f = 1MHz 4.2 nf Turnon time Turnoff time Forward on voltage.39 1.2 (i) VCC = 6V IC = 5A VGE = +15 / 15V RG = 15Ω.9.3.53.6 1. tf.6.3 VF (terminal) VF (chip) IF = 5A IF = 5A Tj= C 2.5 2.5 Tj=1 C 2.2 Tj=15 C 2.15 Tj= C 1.7 2.15 Tj=1 C 1.5 Tj=15 C 1. Reverse recovery time r IF = 5A.35 µs Zero gate voltage collector current ICES VGE = V VCE = 12V Units V µs 1. ma V Brake Converter Thermistor GateEmitter leakage current CollectorEmitter saturation voltage IGES VCE (sat) (terminal) VCE (sat) (chip) VCE = V VGE = +2 / 2V VGE = 15V IC = 35A VGE = 15V IC = 35A 2 na Tj= C 2.1 2.55 Tj=1 C 2.45 Tj=15 C 2.5 Tj= C 1.5 2.3 Tj=1 C 2.2 Tj=15 C 2. Internal gate resistance Rg(int) Ω Turnon time Turnoff time tf VCE = 6V IC = 35A VGE = +15 / 15V RG = 27Ω.39.9.53.6 1.2.6 1..3 Reverse current IRRM VR = 12V 1. ma Forward on voltage VFM (chip) IF = 5A terminal 1.7 2.15 chip 1.35 Reverse current IRRM VR = 16V 1. ma Resistance R T = C 5 T = 1 C 465 495 52 B value B T = / 5 C 335 33 345 K V µs V Ω Thermal resistance characteristics Items Symbols Conditions Characteristics min. typ. max. Inverter IGBT.54 Thermal resistance (1device) Rth(jc) Inverter FWD.73 Brake IGBT.72 Converter Diode.54 Contact thermal resistance (1device) (*4) Rth(cf) with Thermal Compound.5 Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. Units C/W 2
7MBR5VB1 Characteristics (Representative) Collector current vs. CollectorEmitter voltage (typ.) Tj= C / chip Collector current vs. CollectorEmitter voltage (typ.) Tj= 15 C / chip 1 1 VGE =2V 15V 12V VGE =2V 15V 12V 5 1V 5 1V V V 1 2 3 4 5 1 2 3 4 5 CollectorEmitter voltage: VCE[V] CollectorEmitter voltage: VCE [V] Collector current vs. CollectorEmitter voltage (typ.) VGE =15V / chip CollectorEmitter voltage vs. GateEmitter voltage (typ.) Tj= C / chip 1 5 Tj= C Tj=1 C Tj=15 C Collector Emitter voltage: VCE [V] 6 4 2 IC=1A IC=5A IC=A 1 2 3 4 5 CollectorEmitter voltage: VCE[V] 5 1 15 2 Gate Emitter voltage: VGE [V] Capacitance vs. CollectorEmitter voltage (typ.) VGE=V, f= 1MHz, Tj= C Dynamic gate charge (typ.) VCC=6V, IC=5A, Tj= C Capacitance: Cies, Coes, Cres [nf] 1. 1..1. Cies Cres Coes Collector Emitter voltage: VCE [2V/div] Gate Emitter voltage: VGE [5V/div] VCE VGE 1 2 3 5 5 Collector Emitter voltage: VCE [V] Gate charge: Qg [nc] 3
7MBR5VB1 Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=15Ω, Tj=1 C 1 Switching time vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=15Ω, Tj=15 C 1 Switching loss : Eon, Eoff, Err [mj/pulse ] Switching time :,,, tf [ nsec ] Switching time :,,, tf [ nsec ] 1 1 1 5 1 1 Switching time vs. gate resistance (typ.) Vcc=6V, Ic=5A, VGE=±15V, Tj=1 C 1 1 1 1 1 tf tf 1 Gate resistance : RG [Ω] Switching loss vs. gate resistance (typ.) Vcc=6V, Ic=5A, VGE=±15V 1 Eon(15 C) Eon(1 C) 6 Eoff(15 C) Eoff(1 C) 4 Err(15 C) Err(1 C) 2 1 1 Switching time :,,, tf [ nsec ] Switching loss : Eon, Eoff, Err [mj/pulse ] 1 15 1 1 5 1 1 1 5 1 1 5 Switching loss vs. Collector current (typ.) Vcc=6V, VGE=±15V, Rg=15Ω Reverse bias safe operating area (max.) RBSOA (Repetitive pulse) 4 12 Eon(15 C) Eon(1 C) Eoff(15 C) Eoff(1 C) Err(15 C) Err(1 C) 5 1 1 15 tf +VGE=15V, VGE <= 15V, Rg >=15Ω, Tj = 15 C Gate resistance : RG [Ω] 4 CollectorEmitter voltage : VCE[V] (Main terminals)
7MBR5VB1 Forward current vs. forward on voltage (typ.) chip Reverse recovery characteristics (typ.) Vcc=6V, VGE=±15V, Rg=15Ω Forward current : IF [A] 1 5 Tj= C Tj=15 C Tj=1 C 1 2 3 4 5 Reverse recovery current : Irr [ A ] Reverse recovery time : r [ nsec ] 1 1 1 r(15 C) r(1 C) Irr(15 C) Irr(1 C) 5 1 1 15 Forward on voltage : VF [V] Forward current : IF [A] [ Converter ] Forward current vs. forward on voltage (typ.) chip 1 Tj= C Tj=1 C Forward current : IF [A] 5 1 2 3 4 Forward on voltage : VFM [V] Transient thermal resistance (max.) [ Thermistor ] Temperature characteristic (typ.) 1. 1 Thermal resistanse : Rth(jc) [ C/W ] 1..1 FWD[Inverter] IGBT[Brake] IGBT[Inverter] Conv. Diode n 1 2 3 4 τn [sec].23.31.59.7 r n IGBT.5792.1465.2746.12777 [ C/W] FWD.73.1952.245.17273 BIGBT.7723.195.27661.1736 Conv.5792.1465.2746.12777.1.1.1.1 1. Resistance : R [kω] 1 1.1 6 4 2 2 4 6 1 12 14 16 1 Pulse width : PW [sec] Temperature [ C ] 5
7MBR5VB1 Collector current vs. CollectorEmitter voltage (typ.) Tj= C / chip Collector current vs. CollectorEmitter voltage (typ.) Tj= 15 C / chip 7 6 VGE =2V 15V 12V 7 6 VGE =2V 15V 5 4 3 2 1 1V V 5 4 3 2 1 12V 1V V 1 2 3 4 5 1 2 3 4 5 CollectorEmitter voltage: VCE [V] CollectorEmitter voltage: VCE [V] Collector current vs. CollectorEmitter voltage (typ.) VGE=15V / chip CollectorEmitter voltage vs. GateEmitter voltage (typ.) Tj= C / chip 7 6 5 4 3 2 1 Tj= C Tj=15 C Tj=1 C Collector Emitter voltage: VCE [V] 6 4 2 IC=7A IC=35A IC=1A 1 2 3 4 5 CollectorEmitter voltage: VCE [V] 5 1 15 2 Gate Emitter voltage: VGE [V] Capacitance vs. CollectorEmitter voltage (typ.) VGE=V, f= 1MHz, Tj= C Dynamic gate charge (typ.) VCC=6V, IC=35A, Tj= C Capacitance: Cies, Coes, Cres [nf] 1. 1..1. Cies Cres Coes 1 2 3 Collector Emitter voltage: VCE [2V/div] Gate Emitter voltage: VGE [5V/div] 4 VCE VGE 4 Collector Emitter voltage: VCE [V] Gate charge: Qg [nc] 6
7MBR5VB1 Outline Drawings (Unit:mm) Weight: 3g(typ.) Equivalent Circuit [ Converter ] [ Thermistor ] 21(P) 22(P1) 2 (Gu) 1 (Gv) 16 (Gw) 9 1(R) 2(S) 3(T) 7(B) 19(Eu) 17(Ev) 4(U) 15(Ew) 5(V) 6(W) 14(Gb) 13(Gx) 12(Gy) 11(Gz) 23(N) 24(N1) 1(En) 7
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