P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) D D D D S S S G Top View of SOP-8 ( 5,6,7,8 ) D D D D pplications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Ordering and Marking Information (4) G S S S (1, 2, 3) P-Channel MOSFET SM451PS SM451PS K : 451 XXXXX ssembly Material Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 15 o C Handling Code TR : Tape & Reel (25pcs/reel) ssembly Material G : Halogen and Lead Free Device XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
bsolute Maximum Ratings (T = 25 C Unless Otherwise Noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage -2 V GSS Gate-Source Voltage ±12 I D a I DM a I S a I S b E S b Continuous Drain Current (V GS =-4.5V) T =25 C -12.2 T =7 C -9.8 3ms Pulsed Drain Current (V GS =-4.5V) -48.8 Diode Continuous Forward Current -3 valanche Current, Single pulse (L=.1mH) -28 valanche Energy, Single pulse (L=.1mH) 39 mj T J Maximum Junction Temperature 15 T STG Storage Temperature Range -55 to 15 P D a R qj a,c Maximum Power Dissipation Thermal Resistance-Junction to mbient T =25 C 3.1 T =7 C 2 t s 4 Steady State 75 R qjl Thermal Resistance-Junction to Lead Steady State 24 Note a: Surface Mounted on 1in 2 pad area, t sec. b: UIS tested and pulse width limited by maximum junction temperature 15 o C (initial temperature Tj=25 o C). c: Maximum under Steady State conditions is 75 C/W. Electrical Characteristics (T = 25 C Unless Otherwise Noted) V C W C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-25m -2 - - V I DSS Zero Gate Voltage Drain Current V DS =-16V, V GS =V - - -1 T J =85 C - - -3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-25m -.4 - -1 V I GSS Gate Leakage Current V GS =±12V, V DS =V - - ± n d Drain-Source On-state Resistance Diode Characteristics V SD d V GS =-4.5V, I DS =-12.2-11 14 V GS =-2.5V, I DS =-7.7-15 2 V GS =-1.8V, I DS =-3-22 32 Diode Forward Voltage I SD =-1, V GS =V - -.7-1 V e trr Reverse Recovery Time I SD =-12.2, - 18 - ns Reverse Recovery Charge di SD /dt=/ms - 9 - nc Q rr e m mw 2
Electrical Characteristics (Cont.) (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics e R g Gate Resistance V GS =V, V DS =V,F=1MHz - 3 - W C iss Input Capacitance V GS =V, - 179 - C oss Output Capacitance V DS =-V, - 388 - Reverse Transfer Capacitance Frequency=1.MHz - 3 - C rss t d(on) Turn-on Delay Time - - t r Turn-on Rise Time V DD =-V, R L =W, - 14 - I DS =-1, V GEN =-V, t d(off) Turn-off Delay Time R - 8 - G =6W Turn-off Fall Time - 65 - t f Gate Charge Characteristics e Q g Total Gate Charge - 22 - Q gs Gate-Source Charge V DS =-V, V GS =-4.5V, I DS =-12.2-1.2 - Gate-Drain Charge -.5 - Q gd Note d: Pulse test; pulse width 3ms, duty cycle 2%. e: Guaranteed by design, not subject to production testing. pf ns nc 3
Typical Operating Characteristics Power Dissipation Drain Current 3.5 14 3. 12 P tot - Power (W) 2.5 2. 1.5 1. -I D - Drain Current () 8 6 4.5 2 T =25 o C. 2 4 6 8 12 14 16 T =25 o C,V G =-V 2 4 6 8 12 14 16 - Junction Temperature ( C) - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance 3 2 -I D - Drain Current () 1.1 Rds(on) Limit 3ms 1ms ms ms 1s DC T =25 o C.1.1.1 1 Normalized Transient Thermal Resistance 1.1.1.1.2.5 Single Pulse.1.2 Duty =.5 Mounted on 1in 2 pad R qj :4 o C/W 1E-3 1E-4 1E-3.1.1 1 3 -V DS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 5 V GS =-3,-4,-5,-6,-7,-8,-9,-V 42 -I D - Drain Current () 4 3 2-2V -1.5V - On - Resistance (mw) 36 3 24 18 12 6 V GS =-1.8V V GS =-2.5V V GS =-4.5V..5 1. 1.5 2. 2.5 3. -V DS - Drain-Source Voltage (V) 2 3 4 5 -I D - Drain Current () Gate-Source On Resistance Gate Threshold Voltage 5 I DS =-12.2 1.75 I DS = -25m - On Resistance (mw) 4 3 2 Normalized Threshold Voltage 1.5 1.25 1..75.5.25 1 2 3 4 5 6 7 8 9 -V GS - Gate - Source Voltage (V). -5-25 25 5 75 125 15 - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 1.8 1.6 V GS = -4.5V I DS = -12.2 5 Normalized On Resistance 1.4 1.2 1..8 -I S - Source Current () 1 =15 o C =25 o C.6 R ON @ =25 o C: 11mW.4-5 -25 25 5 75 125 15 - Junction Temperature ( C).1..2.4.6.8 1. 1.2 1.4 -V SD - Source - Drain Voltage (V) Capacitance Gate Charge 3 27 Frequency=1MHz 9 V DS = -V I DS = -12.2 C - Capacitance (pf) 24 2 18 15 12 9 6 3 Crss Coss Ciss -V GS - Gate - source Voltage (V) 8 7 6 5 4 3 2 1 4 8 12 16 2 -V DS - Drain - Source Voltage (V) 9 18 27 36 45 Q G - Gate Charge (nc) 6
valanche Test Circuit and Waveforms VDS L tv DUT ES VDD RG VDD tp IS IL.1W tp VDSX(SUS) VDS Switching Time Test Circuit and Waveforms VDS RG VGS DUT RD VDD VGS % td(on) tr td(off) tf tp 9% VDS 7
Package Information SOP-8 D -T- SETING PLNE < 4 mils SEE VIEW E1 E h X 45 e b c 1 2 VIEW L.25 GUGE PLNE SETING PLNE S Y M B MILLIMETERS O L MIN. MX. 1.75 1 c D E E1 e h L..25 b.31.51.17.25 SOP-8 1.27 BSC.5 BSC.25.5..2.4 1.27 MIN..4 2 1.25.49 4.8 5.8 3.8 6.2 4. INCHES MX..69..12.2.7. 5..189.197.228.244.15.157.16.5 8 8 Note: 1. Follow JEDEC MS-12. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed mil per side. RECOMMENDED LND PTTERN 1.27 2.2 5.74 2.87.8.635 UNIT: mm 8
Carrier Tape & Reel Dimensions OD P P2 P1 H E1 OD1 B T B W F K B SECTION - SECTION B-B d T1 pplication H T1 C d D W E1 F 33.± 12.4+2. 2. 5 MIN. -. 13.+.5 -.2 1.5 MIN. 2.2 MIN. 12.±.3 1.75±. 5.5±.5 SOP-8 P P1 P2 D D1 T B K 4.±. 8.±. 2.±.5 1.5+. -. 1.5 MIN..6+. -.4 6.4±.2 5.2±.2 2.±.2 (mm) 9
Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 15 C 6-12 seconds 15 C 2 C 6-12 seconds verage ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 183 C 6-15 seconds 217 C 6-15 seconds See Classification Temp in table 1 See Classification Temp in table 2 2** seconds 3** seconds verage ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, 8 Hrs, 8% of VDS max @ Tjmax HTGB JESD-22, 8 Hrs, % of VGS max @ Tjmax PCT JESD-22, 2 168 Hrs, %RH, 2atm, 121 C TCT JESD-22, 4 5 Cycles, -65 C~15 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-5635818 Fax: 886-3-56425 11