N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) D S G Top View of SOT-23-3 D pplications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Load Switch G S N-Channel MOSFET Ordering and Marking Information SM236NS ssembly Material Handling Code Temperature Range Package Code Package Code : SOT-23-3 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel (3ea/reel) ssembly Material G : Halogen and Lead Free Device SM236NS : 6XX XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
bsolute Maximum Ratings (T = 25 C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage 3 V V GSS Gate-Source Voltage ±2 I D T =25 C 4.7 Continuous Drain Current T =7 C 3.7 I DM 3ms Pulsed Drain Current V GS =V 8 I S Diode Continuous Forward Current T J Maximum Junction Temperature 5 C T STG Storage Temperature Range -55 to 5 P D T =25 C.4 Maximum Power Dissipation W T =7 C.9 t sec 9 R q J * Thermal Resistance-Junction to mbient C/W Steady state 4 Note: *Surface Mounted on in 2 pad area, t sec. Electrical Characteristics (T = 25 C unless otherwise noted) SM236NS Symbol Parameter Test Conditions Unit Min. Typ. Max. Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25m 3 - - V I DSS V DS =24V, V GS =V - - Zero Gate Voltage Drain Current m T J =85 C - - 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25m.3.8 2.5 V I GSS Gate Leakage Current V GS =±2V, V DS =V - - ± n R DS(ON) a V GS =V, I DS =4-32 4 Drain-Source On-State Resistance mw VGS =4.5V, I DS =3-46 6 Diode Characteristics V SD a Diode Forward Voltage I SD =, V GS =V -.75. V t rr Reverse Recovery Time - - ns I SD =4, dl SD /dt=/ms Reverse Recovery Charge - 4 - nc Q rr 2
Electrical Characteristics (Cont.) (T = 25 C unless otherwise noted) SM236NS Symbol Parameter Test Conditions Unit Min. Typ. Max. Dynamic Characteristics b R g Gate Resistance VGS=V,VDS=V,F=MHz - 2. - W C iss Input Capacitance V GS =V, - 24 - C oss Output Capacitance V DS =5V, - 4 - Reverse Transfer Capacitance Frequency=.MHz - 3 - C rss t d(on) Turn-on Delay Time - 4.5 9 T r Turn-on Rise Time V DD =5V, R L =5W, - 2 I DS =, V GEN =V, t d(off) Turn-off Delay Time R G =6W - 2 Turn-off Fall Time - 2.6 5 T f pf ns Q g Total Gate Charge Gate Charge Characteristics b V DS =5V, V GS=4.5V, - 3 - I DS =4 V GS =V - 6.2 - Q gs Gate-Source Charge -.8 - Q gd Gate-Drain Charge V DS =5V, V GS =V, I DS =4 -.6 - Qgth Threshold Gate Charge 3. nc Note a: Pulse test; pulse width 3ms, duty cycle 2%. Note b: Guaranteed by design, not subject to production testing. 3
Typical Operating Characteristics Power Dissipation Drain Current.6 6 Ptot - Power (W).4.2..8.6.4.2 T =25 o C. 2 4 6 8 2 4 6 ID - Drain Current () 5 4 3 2 T =25 o C,V G =V 2 4 6 8 2 4 6 Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance ID - Drain Current () 5. Rds(on) Limit 3ms ms ms ms DC T =25 o C... 3 Normalized Transient Thermal Resistance 2....2.5. Single Pulse.2 Duty =.5 Mounted on in 2 pad R qj : 9 o C/W E-3 E-4 E-3.. 6 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 2 9 ID - Drain Current () 6 2 8 4 V GS =4.5,5,6,7,8,9,V 4V 3.5V 3V RDS(ON) - On - Resistance (mw) 75 6 45 3 5 V GS =4.5V V GS =V 2.5V..5..5 2. 2.5 3. VDS - Drain-Source Voltage (V) 4 8 2 6 2 ID - Drain Current () Gate-Source On Resistance Gate Threshold Voltage 2 I DS =4.4 I DS =25m RDS(ON) - On - Resistance (mw) 8 6 4 2 Normalized Threshold Voltage.2..8.6 2 3 4 5 6 7 8 9 VGS - Gate - Source Voltage (V).4-5 -25 25 5 75 25 5 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward.8.6 V GS =V I DS =4 2 Normalized On Resistance.4.2..8 IS - Source Current () T j =5 o C T j =25 o C.6 R ON @T j =25 o C: 32mW.4-5 -25 25 5 75 25 5...3.6.9.2.5 Tj - Junction Temperature ( C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 4 35 Frequency=MHz 9 V DS =5V I DS =4 C - Capacitance (pf) 3 25 2 5 5 Crss Coss Ciss VGS - Gate - source Voltage (V) 8 7 6 5 4 3 2 5 5 2 25 3 2 3 4 5 6 7 VDS - Drain - Source Voltage (V) QG - Gate Charge (nc) 6
valanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT IS VDS RG VDD VDD tp IL.W ES tv Switching Time Test Circuit and Waveforms VDS DUT RD VDS 9% RG VGS VDD tp % VGS td(on) tr td(off) tf 7
Package Information SOT-23-3 D e -T- SETING PLNE < 4 mils SEE VIEW 2.25 E E b c e L GUGE PLNE SETING PLNE VIEW S Y M B O L 2 b c D E E e e L.3 MIN. -..9.3.8 2.6.4 MILLIMETERS.95 BSC.9 BSC MX..2.8.2.5.22 3..8 SOT-23-3 MIN...35.2.3.6.2 INCHES.37 BSC.75 BSC MX..47.3.44.2.9 2.7 3..6.22.2.55.8.7.24 8 8 Note : Dimension D and E do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed mil per side. - RECOMMENDED LND PTTERN.8 2.4.8.95 UNIT: mm 8
Carrier Tape & Reel Dimensions OD P P2 P W F E K B OD B T B SECTION - SECTION B-B d H T pplication H T C d D W E F SOT-23-3 78.±2. 5 MIN. 8.4+2. -. 3.+.5 -.2.5 MIN. 2.2 MIN. 8.±.3.75±. 3.5±.5 P P P2 D D T B K 4.±. 4.±. 2.±.5.5+. -.. MIN..6+. -.4 3.2±.2 3.±.2.5±.2 (mm) 9
Taping Direction Information SOT-23-3 USER DIRECTION OF FEED Classification Profile
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds verage ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 83 C 6-5 seconds 27 C 6-5 seconds See Classification Temp in table See Classification Temp in table 2 2** seconds 3** seconds verage ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, 8 Hrs, 8% of VDS max @ Tjmax HTGB JESD-22, 8 Hrs, % of VGS max @ Tjmax PCT JESD-22, 2 68 Hrs, %RH, 2atm, 2 C TCT JESD-22, 4 5 Cycles, -65 C~5 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-563588 Fax: 886-3-56425