40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 30 nc (Typ.) Extended Safe Operating Area Lower R DS(ON) : 3.3 mω (Typ.) @ = Lower R DS(ON) : 3.6 mω (Typ.) @ =4.5V 00% Avalanche Tested TO-220 2 3.Gate 2. Drain 3. Source Absolute Maximum Ratings T C =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 40 V Drain Current Continuous (T C = 25 ) 30 A Drain Current Continuous (T C = 00 ) 90 A M Drain Current Pulsed (Note ) 300 A Gate-Source Voltage ±20 V E AS Single Pulsed Avalanche Energy (Note 2) 050 mj E AR Repetitive Avalanche Energy (Note ).5 mj P D Power Dissipation (T C = 25 ) - Derate above 25 5 W 0.77 W/ T J, T STG Operating and Storage Temperature Range -55 to +75 T L Maximum lead temperature for soldering purposes, /8 from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case --.3 R θcs Case-to-Sink 0.5 -- /W R θja Junction-to-Ambient -- 62.5
Electrical Characteristics T J =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = 250 μa.2 -- 2.8 V R DS(ON) Static Drain-Source On-Resistance Off Characteristics = 0 V, = 30 A -- 3.3 4.0 mω = 4.5 V, = 20 A -- 4.0 4.8 mω g FS Forward Transconductance = 5, = 30 A -- 90 -- S BS Drain-Source Breakdown Voltage = 0 V, = 250 μa 40 -- -- V SS = 32 V, = 0 V -- -- μa Zero Gate Voltage Drain Current = 32 V, T J = 25 -- -- 00 μa I GSS Gate-Body Leakage Current = ±20 V, = 0 V -- -- ±00 na Dynamic Characteristics C iss Input Capacitance -- 5400 -- pf C oss Output Capacitance = 25 V, = 0 V, f =.0 MHz -- 620 -- pf C rss Reverse Transfer Capacitance -- 450 -- pf R g Gate Resistance = 0 V, = 0 V, f = MHz --.5 -- Ω Switching Characteristics t d(on) Turn-On Time -- 40 -- ns t r Turn-On Rise Time = 20 V, = 30 A, -- 60 -- ns t d(off) Turn-Off Delay Time R G = 6 Ω -- 220 -- ns t f Turn-Off Fall Time -- 50 -- ns Q g Total Gate Charge -- 30 -- nc Q gs Gate-Source Charge = 32 V, = 30 A, = 0 V -- 20 -- nc Q gd Gate-Drain Charge -- 35 -- nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current -- -- 30 I SM Pulsed Source-Drain Diode Forward Current -- -- 300 A V SD Source-Drain Diode Forward Voltage I S = 30 A, = 0 V -- --.3 V trr Reverse Recovery Time I S = 30 A, = 0 V -- 60 -- ns Qrr Reverse Recovery Charge di F /dt = 00 A/μs -- 60 -- nc Notes :. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=mH, I AS =23A, =30V, R G =25Ω, Starting T J =25 C
Typical Characteristics 0 2 Top : 0 V 8 V 7 V 6 V 5 V 4 V Bottom : 3.5 V 00 0 75 o C 25 o C 0. 300us Pulse Test 2. T C = 25 o C 0 0 0, Drain-Source Voltage [V] Figure. On Region Characteristics. = 5V 2. 300us Pulse Test 0. 0 2 4 6 8, Gate-Source Voltage [V] Figure 2. Transfer Characteristics 6.0 R DS(ON) [mω], Drain-Source On-Resistance 5.5 5.0 4.5 4.0 3.5 = 4.5V = 3.0 Note : T J = 25 o C 2.5 0 50 00 50 200 250 300 Figure 3. On Resistance Variation vs Drain Current and Gate Voltage R, Reverse Drain Current [A] 00 0 75 o C 25 o C. = 0V 2. 300us Pulse Test 0. 0.0 0.4 0.8.2.6 2.0 V SD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitances [pf] 8000 7000 6000 5000 4000 3000 2000 000 C iss C oss C rss 0 0-0 0 0, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd * Note ;. = 0 V 2. f = MHz Figure 5. Capacitance Characteristics, Gate-Source Voltage [V] 2 0 8 6 4 2 = 32V = 30A 0 0 20 40 60 80 00 20 40 Q G, Total Gate Charge [nc] Figure 6. Gate Charge Characteristics
Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage.2..0 0.9 0.8-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] Note :. = 0 V 2. = 250µA R DS(ON), (Normalized) Drain-Source On-Resistance 2.0.5.0 0.5 0.0-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] Note :. = 0 V 2. = 30 A Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 0 3 0 2 0 0 0 0 - Operation in This Area is Limited by R DS(on). T C = 25 o C 2. T J = 75 o C 3. Single Pulse 0-2 0-0 0 0 0 2, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area DC 0 ms ms 00 µs 50 25 00 75 50 25 0 25 50 75 00 25 50 75 T C, Case Temperature [ o C] Figure 0. Maximum Drain Current vs Case Temperature 0 0 Z θjc (t), Thermal Response 0 - D=0.5 0.2 0. 0.05 0.02 0.0 single pulse. Z θjc (t) =.3 o C/W Max. 2. Duty Factor, D=t /t 2 3. T JM - T C = P DM * Z θjc (t) P DM t t 2 0-2 0-5 0-4 0-3 0-2 0-0 0 0 t, Square Wave Pulse Duration [sec] Figure. Transient Thermal Response Curve
2V 200nF 50KΩ 300nF Fig 2. Gate Charge Test Circuit & Waveform Same Type as Q g Q gs Q gd 3mA Charge Fig 3. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) V in 0% t d(on) t r t d(off) tf t on t off Fig 4. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- L L I 2 2 AS BS -------------------- BS -- BS I AS R G (t) (t) t p Time
Fig 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms + _ I S L Driver R G Same Type as dv/dt controlled by RG I S controlled by pulse period ( Driver ) D = Gate Pulse Width -------------------------- Gate Pulse Period I S ( ) I FM, Body Diode Forward Current di/dt I RM ( ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
Package Dimension TO-220 9.90±0.20 φ3.60±0.20 4.50±0.20.30±0.20 3.08±0.20 3.02±0.20 5.70±0.20 2.80±0.20 9.9±0.20 6.50±0.20.27±0.20.52±0.20 2.40±0.20 2.54typ 2.54typ 0.80±0.20 0.50±0.20