7MBR3SC6 IGBT Modules PIM/Built-in converter with thyristor and brake (S series) 6 / 3 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motor Drive C and DC Servo Drive mplifier Uninterruptible Power Supply Maximum ratings and characteristics bsolute maximum ratings (Tc= C unless without specified) Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage CES GES 6 ± IC Continuous 3 Collector current ICP -IC 1ms 6 3 Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current PC CES GES IC ICP 1 device Continuous 1ms 1 6 ± 4 Collector power disspation Repetitive peak reverse voltage(diode) Repetitive peak off-state voltage Repetitive peak reverse voltage verage on-state current Surge n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage verage output current Surge current (Non-Repetitive) PC RRM DRM RRM IT() ITSM Tjw RRM IO IFSM 1 device Hz/6Hz sine wave Tj=1 C, ms half sine wave Hz/6Hz sine wave Tj=1 C, ms 8 6 8 8 3 7 1 8 3 I t (Non-Repetitive) I t half sine wave 1 Junction temperature (except Thyristor) Tj +1 Storage temperature Tstg -4 to +1 Isolation between and copper base * iso C : 1 minute C voltage between thermistor and others *3 C Converter Thyristor Brake Inverter Mounting screw torque 1.7 *1 W W C s C C N m *1 Recommendable value : 1.3 to 1.7 N m (M4) * ll s should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and to 6 should be connected together and shorted to copper base.
7MBR3SC6 Elecical characteristics (Tj= C unless otherwise specified) Item Symbol Condition Characteristics Unit Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES GE(th) CE=6, GE= CE=, GE=± CE=, IC=3m. 7.8 7 8. µ n Collector-Emitter saturation voltage CE(sat) GE=1, Ic=3 chip 1.8 1.9.4 Input capacitance Turn-on time Cies GE=, CE=, f=1mhz CC=3 IC=3 3.4. 1..6 pf µs Turn-off GE=±1.4 1. RG=8Ω..3 Forward on voltage F IF=3 chip 1.8 1.9.6 Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current r ICES IGES IF=3 CES=6, GE= CE=, GE=± 3 7 ns µ n Collector-Emitter saturation voltage CE(sat) IC=, GE=1 chip 1.8 1.9.4 Turn-on time CC=3 IC=.4. 1..6 µs Turn-off time GE=±1 RG=1Ω.4. 1..3 Reverse current off-state current Reverse current Gate igger current Gate igger voltage On-state voltage IRRM IDM IRRM IGT GT TM R=6 DM=8 RM=8 D=6, IT=1 D=6, IT=1 ITM=3 chip 1. 1.1 7 1. 1.. 1. µ m m m Forward on voltage FM IF=3 chip 1.1 1. 1. Reverse current Resistance IRRM R R=8 T= C 7 µ Ω Thermistor Converter Thyristor Brake Inverter T= C 46 49 B value B T=/ C 33 337 34 K Thermal resistance Characteristics Item Symbol Condition Characteristics Unit Min. Typ. Max. Inverter IGBT 1.4 Thermal resistance ( 1 device ) Rth(j-c) Inverter FWD. Brake IGBT 1.6 Thyristor 1. C/W Converter Diode 1.33 Contact thermal resistance * Rth(c-f) With thermal compound. * This is the value which is defined mounting on the additional cooling fin with thermal compound
Characteristics (Representative) 7MBR3SC6 7 Tj= C(typ.) 7 Tj= 1 C(typ.) 6 GE= 1 1 6 GE= 1 1 4 3 4 3 1 3 4 Collector - Emitter voltage : CE [ ] 1 3 4 Collector - Emitter voltage : CE [ ] 7 GE=1 (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage Tj= C(typ.) 6 Tj= C Tj= 1 C 8 4 3 Collector - Emitter voltage : CE [ ] 6 4 Ic= 6 Ic= 3 Ic= 1 1 3 4 Collector - Emitter voltage : CE [ ] 1 Gate - Emitter voltage : GE [ ] Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= 1MHz, Tj= C Dynamic Gate charge (typ.) cc=3, Ic=3, Tj= C Capacitance : Cies, Coes, Cres [ pf ] Cies Coes Collector - Emitter voltage : CE [ ] 4 3 1 Gate - Emitter voltage : GE [ ] Cres 1 3 3 Collector - Emitter voltage : CE [ ] 1 Gate charge : Qg [ nc ]
7MBR3SC6 Switching time vs. Collector current (typ.) cc=3, GE=±1, Rg=8Ω, Tj= C Switching time vs. Collector current (typ.) cc=3, GE=±1, Rg= 8Ω, Tj= 1 C Switching time :,,, [ nsec ] Switching time :,,, [ nsec ] 3 4 3 4 Switching time vs. Gate resistance (typ.) cc=3, Ic=3, GE=±1, Tj= C 3. Switching loss vs. Collector current (typ.) cc=3, GE=±1, Rg=8Ω Switching time :,,, [ nsec ] Switching loss : Eon, Eoff, Err [ mj/pulse ].. 1. 1.. Eon(1 C) Eoff(1 C) Eon( C) Eoff( C) Err(1 C) Err( C) 3 Gate resistance : Rg [ Ω ]. 3 4 6 6 Switching loss vs. Gate resistance (typ.) cc=3, Ic=3, GE=±1, Tj= 1 C 3 Reverse bias safe operating area +GE=1, -GE<=1, Rg>=8Ω, Tj<=1 C Switching loss : Eon, Eoff, Err [ mj/pulse ] 4 3 1 Eon Eoff Err 3 1 SCSO (non-repetitive pulse) RBSO (Repetitive pulse) 3 Gate resistance : Rg [ Ω ] 4 6 8 Collector - Emitter voltage : CE [ ]
7MBR3SC6 7 Forward current vs. Forward on voltage (typ.) 3 Reverse recovery characteristics (typ.) cc=3, GE=±1, Rg=8Ω 6 Tj=1 C Tj= C Forward current : IF [ ] 4 3 Reverse recovery current : Irr [ ] Reverse recovery time : r [ nsec ] r(1 C) r( C) Irr(1 C) Irr( C) 1 3 Forward on voltage : F [ ] 3 4 Forward current : IF [ ] 7 [ Converter ] Forward current vs. Forward on voltage (typ.) [ Thyristor ] On-state current vs. On-state voltage (typ.) 6 Tj= C Tj= 1 C Tjw= 1 C Tjw= C Forward current : IF [ ] 4 3 Instantaneous on-state current [ ]..4.8 1. 1.6. Forward on voltage : FM [ ]..4.8 1. 1.6. Instantaneous on-state voltage [ ] Transient thermal resistance [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ C/W ] 1 FWD[Inverter] IGBT[Brake] Conv. Diode IGBT[Inverter] Thyristor Resistance : R [ kω ] 1.1..1.1.1 1 Pulse width : Pw [ sec ].1-6 -4-4 6 8 1 14 16 18 Temperature [ C ]
7MBR3SC6 Tj= C(typ.) Tj= 1 C(typ.) 4 GE= 1 1 4 GE= 1 1 3 3 1 3 4 Collector - Emitter voltage : CE [ ] 1 3 4 Collector - Emitter voltage : CE [ ] GE=1 (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage Tj= C(typ.) 4 3 Tj= C Tj= 1 C Collector - Emitter voltage : CE [ ] 8 6 4 Ic= 4 Ic= Ic= 1 3 4 Collector - Emitter voltage : CE [ ] 1 Gate - Emitter voltage : GE [ ] Capacitance vs. Collector-Emitter voltage (typ.) GE=, f= 1MHz, Tj= C Dynamic Gate charge (typ.) cc=3, Ic=, Tj= C Capacitance : Cies, Coes, Cres [ pf ] Cies Coes Cres Collector - Emitter voltage : CE [ ] 4 3 1 Gate - Emitter voltage : GE [ ] 1 3 3 Collector - Emitter voltage : CE [ ] 4 6 8 1 Gate charge : Qg [ nc ]
7MBR3SC6 Outline Drawings, mm Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] [ Thyristor ] [ Thermistor ] 1 (P) 6 (P1) (Gu) 18 (Gv ) 16 (Gw) 8 9 1(R) (S) 3(T) 7(B) 19(Eu) 17(Ev ) 4(U) 1(Ew) () 6(W) 14(Gb) 13(Gx) 1(Gy ) 11(Gz) 3(N) 4(N1) (En)