Preliminary. Battery Protect Solution IC MP24AF ( 001-MP24AF-00 ) 01/08 01/08 01/11. Document No. : DS-MP24AF-00. ITM Semiconductor Co.

Size: px
Start display at page:

Download "Preliminary. Battery Protect Solution IC MP24AF ( 001-MP24AF-00 ) 01/08 01/08 01/11. Document No. : DS-MP24AF-00. ITM Semiconductor Co."

Transcription

1 Document No. : DS--00 DATA SHEET Product Product code Production Form ( ) TEP - 5L,BD54 Date of Registration January Issued Checked Approved H.M Jo S.W Park Y.S Kim 01/08 01/08 01/11 ITM Semiconductor Co., LTD. ITM Semiconductor Co., LTD , Namchon-Ri, Oksan-Myon, Cheonwon-Gun, Chungcheongbuk-Do, Korea TEL FAX HOME

2 Contents 1. Features Page 1 2. Outline Page 2 3. Pin Assignment Page 3 4. Block Diagram Page 3 5. Absolute Maximum Rating Page 4 6. Electrical Characteristics Page 4 7. Measuring Circuit Page 9 8. Operation Page 10 1) Overcharge detector (D1) Page 10 2) Overdischarge detector (D2) Page 10 3) Discharge overcurrent detector, Short detector (D3, Short Detector) Page 11 4) Charger overcurrent detector Page 11 5) Over voltage charger detector Page Application Circuit Page Timing Chart Page Package Description Page Marking Contents Page 17

3 Features 1.TheprotectionICandTheDual-NchMOSFETtousecommonDrainareintegratedinto One-packaging IC. 2. Reduced Pin-Count by fully connecting internally. 3. Application Part 1) Protection IC 1 Uses high withstand voltage CMOS process. - The charger section can be connected up to absolute maximum rating Detection voltage precision - Overcharge detection voltage ±25m (Ta=25 ), ±45m (Ta=-30~70 ) - Overdischarge detection voltage ±70m (Ta=25 ), ±80m (Ta=-30~70 ) - Discharging overcurrent detection voltage ±10m (Ta=25 ), ±20m (Ta=-30~70 ) - Charging overcurrent detection voltage ±20m (Ta=25 ), ±40m (Ta=-30~70 ) 3 Built-in detection delay times - Overcharge detection delay time 1.00±0.20s (Ta=25 ), 1.00[+0.50,-0.40]s (Ta=-30~70 ) - Overdischarge detection delay time) 96.0±19.2ms (Ta=25 ), 96.0[+48,-38.4] ms (Ta=-30~70 ) - Discharging overcurrent detection delay time) 12.0±2.4ms (Ta=25 ), 12.0[+6.0,-4.8] ms (Ta=-30~70 ) - Charging overcurrent detection delay time) 6.0±1.2ms (Ta=25 ), 6.0[+3.0,-2.4] ms (Ta=-30~70 ) - Short detection delay time) 400[+160,-120] μs (Ta=25 ), 400[+400,-200] μs (Ta=-30~70 ) 4 0 charge function allowed 5 With abnormal charger has an ability to detect function 6 Auto Wake-up function allowed 2) FET 1 Using advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 2.5 while retaining a 12 GS(MAX). 2 TheprotectionforESD 3 Common drain configuration 4 General characteristics -DS () = 24 -ID(A) = 7A -RSS(ON) <46mΩ (GS =4.5,ID =5A) - ESD Rating : 2000 HBM - 1 -

4 Outline This is a battery protect solution IC which is integrated with built-in the protection IC to use a lithium ion/lithium polymer secondary batteries developed for 1-cell series and Dual-Nch MOSFET. It functions to protect the battery by detecting overcharge, overdischarge, discharge overcurrent, charge overcurrent and other abnormalities as turning off internal Nch MOSFET. The protection IC is composed of four voltage detectors, short detection circuit, reference voltage sources, oscillator, counter circuit and logical circuits. The COUT pin (charge FET control pin) and DOUT pin (discharge FET control pin) outputs are CMOS output, and can drive the internal Nch MOSFET directly. The COUT output becomes low level after delay time fixed in the IC if overcharge is detected. The DOUT output becomes low level after delay time fixed in the IC if overdischarge, discharge overcurrent or short is detected. On overcharge state, if the DD voltage is less than the overcharge release voltage, the COUT output becomes high level after delay time fixed in the IC. On overdischarge state, if the voltage of the battery rises more than the overdischarge detection voltage with connecting the charger, the DOUT output becomes high level after delay time fixed in the IC. Charging current canbesuppliedtothebatterydischargedupto0. Once discharge overcurrent or short have been detected, if the state of discharge overcurrent or short is released by opening the loads, the DOUT output becomes high level after delay time fixed in the IC. On overdischarge state, the supply current is reduced as less as possible. Once charge overcurrent has been detected, the state of charge overcurrent is released by opening the charger and setting the load

5 Pin Assignment [ Package: TEP-5L ] 1 2 <Top view> <Bottom view> N.C 2 Source 1(same as SS) 3 Source 2 4 DD 5 6 Drain Block Diagram - 3 -

6 Absolute Maximum Rating TOPR=25, Source1(SS)=0 Item Symbol Rating Unit Supply oltage DD -0.3 ~ 12 - Terminal Input oltage - DD-28 ~ DD+0.3 DS Terminal Input oltage DS SS-0.3 ~ DD+0.3 COUT Terminal Output oltage COUT DD-28 ~ DD+0.3 DOUT Terminal Output oltage DOUT SS-0.3 ~ DD+0.3 Operation Temperature TOPR -40 ~ +85 Storage Temperature TSTG -55 ~ +125 Drain-Source oltage DS 24 Gate-Source oltage GS ±12 Electrical Characteristics Input oltage Item Symbol Measure Condition Min. Typ. Max. Unit *1 Operating Input oltage DD1 DD - SS A Minimum Operating oltage for 0 Charging Channel ON oltage ST DD--, DD-SS= A COUT Pin Nch ON oltage OL1 IOL=30 μa, DD= COUT Pin Pch ON oltage OH1 IOH=-30 μa,dd= DOUT Pin Nch ON oltage OL2 IOL=30 μa, DD= DOUT Pin Pch ON oltage OH2 IOL=-30 μa, DD= Current Consumption Current Consumption IDD DD=3.9, -= μa L Current Consumption at Stand-By Over Charge oltage Protection IS DD= μa L Overcharge Detection oltage DET1 R1=1.0 kω TOPR= TOPR= -30~ B Overcharge Detection Delay Time Overcharge Release oltage Overcharge Release Delay Time tdet1 DD= TOPR= s B TOPR= -30~ REL1 R1=1.0 kω TOPR= TOPR= -30~ trel1 DD= TOPR= ms B TOPR= -30~ B - 4 -

7 Item Symbol Measure Condition Min. Typ. Max. Unit *1 Over Discharge oltage Protection Overdischarge Detection oltage DET2 -=0 R1=1.0 kω TOPR= TOPR= -30~ D Overdischarge Detection Delay Time Overdischarge Release oltage Overdischarge Release oltage 2 tdet2 DD= TOPR= ms D TOPR= -30~ REL2 REL2' R1=1.0 kω chg=4.2 R1=1.0 kω R2=2.2 kω TOPR= TOPR= -30~ TOPR= TOPR= -30~ D D Overdischarge Release Delay Time Discharge Overcurrent Protection Discharging Overcurrent Detection oltage Discharging Overcurrent Detection Delay Time Discharging Overcurrent Release Delay Time Note : *1 The test circuit symbols. *2 The parameter is guaranteed by design. trel2 DD= TOPR= ms E TOPR= -30~ DET3 tdet3 trel3 Charge Overcurrent Protection Charging Overcurrent Detection oltage Charging Overcurrent Detection Delay Time Charging Overcurrent Release Delay Time Short Protection DET4 tdet4 trel4 DD=3.0 R2=2.2 kω DD=3.0 -=0 1 DD=3.0 -=3 0 DD=3.5 R2=2.2 kω DD=3.5 -=0-1 DD=3.5 -=-1 0 Short Detection oltage SHORT DD=3.0 Short Detection Delay Time Reset Resistance Overcurrent Release Resistance tshort DD=3.0 -=0 3.0 TOPR= TOPR= -30~ TOPR= TOPR= -30~ TOPR= TOPR= -30~ TOPR= TOPR= -30~ TOPR= TOPR= -30~ TOPR= TOPR= -30~ TOPR= 25 TOPR= -30~70 DD-1.2 DD-0.9 DD-0.6 DD-1.2 DD-0.9 DD-0.6 TOPR= TOPR= -30~ RSHORT DD=3.6, -= kω F Over oltage Charger Protection Over oltage Charger chg1 DD=3.6, R2=2.2kΩ A Detection oltage Over oltage Charger Release oltage chg2 DD=3.6, R2=2.2 kω A ms ms ms ms μs F F F G G G F F - 5 -

8 Item Symbol Measure Condition Min. Typ. Max. Unit *1 Integrated MOSFET Drain-Source Breakdown oltage BDSS ID=250 μa, GS= Zero Gate oltage Drain Current IDSS DS=20, GS= TJ= μa Gate-Body Leakage Current Gate-Source Breakdown oltage IGSS DS=0, GS=± μa BGSO DS=0, IG=±250 μa ± Gate Threshold oltage GS(th) DS=GS, ID=250 μa Static Source-Source ON-Resistance RSS(ON) GS=10, ID=5A mω TJ= GS=4.5, ID=5A mω GS=3.9, ID=5A mω GS=2.5, ID=3A mω Diode Forward oltage SD IS=1A, GS= Maximum Body-Diode Continuous Current IS 4.5 A - 6 -

9 Note : *1 The test circuit symbols. *2 The parameter is guaranteed by design

10 - 8 -

11 Measuring Circuit A. E. DD - Source1 (SS) TP Source2 DD - Source1 (SS) TP Source2 B. F. DD TP DD TP - Source1 (SS) Source2 A - Source1 (SS) Source2 C. G. DD TP DD TP - Source1 (SS) Source2 - Source1 (SS) Source2 D. H. DD - Source1 (SS) TP Source2 A DD - Source1 (SS) TP Source2-9 -

12 Operation 1. Overcharge detector (D1) The D1 monitors DD pin voltage during charge. In the state of charging the battery, it will detect the overcharge state of the battery if the DD terminal voltage becomes higher than the overcharge detection voltage(typ ). And then the COUT terminal turns to low level, so the internal charging control Nch MOSFET turns OFF and it forbids to charge the battery. After detecting overcharge, it will release the overcharge state if the DD terminal voltage becomes lower than the overcharge release voltage(typ.4.025). And then the COUT terminal turns to high level, so the internal charging control Nch MOSFET turns ON, and it accepts to charge the battery. When the DD terminal voltage is higher than the overcharge detection voltage, to disconnect the charger and connect the load, leave the COUT terminal low level, but it accepts to conduct load current via the paracitical body diode of the internal Nch MOSFET. And then if the DD terminal voltage becomes lower than the overcharge detection voltage, the COUT terminal turns to high level, so the internal Nch MOSFET turn ON, and it accepts to charge the battery. The overcharge detection and release have delay time decided internally. When the DD terminal voltage becomes higher than the overcharge detection voltage, if the DD terminal voltage becomes lower than the overcharge detection voltage again within the overcharge detection delay time(typ. 1.00s), it will not detect overcharge. And in the state of overcharge, when the DD terminal voltage becomes lower than the overcharge release voltage, if the DD terminal voltage backs higher than the overcharge release voltage again within the overcharge release delay time(typ. 2ms), it will not release overcharge. The output driver stage of the COUT terminal includes a level shifter, so it will output the - terminal voltage as low level.the outputtypeofthecout terminal is CMOS output between DD and - terminal voltage. 2. Overdischarge detector (D2) The D2 monitors DD pin voltage during discharge. In the state of discharging the battery, it will detect the overdischarge state of the battery if the DD terminal becomes lower than the overdischarge detection voltage (Typ ). And then the DOUT terminal turns to low level, so the internal discharging control Nch MOSFET turn OFF and it forbids to discharge the battery. Once overdischarge has been detected, overdischarge is released and the DOUT output becomes high level, if the voltage of the battery rises more than the overdischarge detection voltage with connecting the charger, or more than the overdischarge release voltage without connecting the charger. Charging current is supplied through a parasitic diode of Nch MOS FET when the DD terminal voltage is below the overdischarge detection voltage to the connection of the charger, and the DOUT terminal enters the state which can be discharged by becoming high level,and turning on Nch MOS FET when the DD terminal voltage rises more than the overdischarge detection voltage. When the battery voltage is about 0, if the charger voltage is higher than the minimum operating voltage for 0 charging (Max. 1.2), the COUT terminal outputs high level and it accepts to conduct charging current

13 The overdischarge detection have delay time decided internally. When the DD terminal voltage becomes lower than the overdischarge detection voltage, if the DD terminal voltage becomes higher than the overdischarge detection voltage again within the overdischarge detection delay time (Typ. 96ms), it will not detect overdischarge. Moreover, the overdischarge release delay time (Typ. 4ms) exists, too. All the circuits are stopped, and after the overdischarge is detected, it is assumed the state of the standby, and decreases the current (standby current) which IC consumes as much as possible. (When DD=2, Max. 0.5uA). The output type of the DOUT terminal is CMOS output between DD and SS terminal voltage. 3. Discharge overcurrent detector, Short detector (D3, Short Detector) In the state of chargable and dischargabe, D3 monitors the voltage level of - pin. If the - terminal voltage becomes higher than the discharging overcurrent detection voltage (Typ ) by short of loads, etc., it will detect discharging overcurrent state. If the - terminal voltage becomes higher then short detection voltage (Typ. DD-0.9),itwilldetect discharging overcurrent state, too. And then the DOUT terminal outputs low level, so the internal discharging control Nch MOSFET turns OFF, and it protects from large current discharging. The discharging overcurrent detection has delay time decided internally. When the - terminal voltage becomes higher than the discharging overcurrent detection voltage, if the - terminal voltage becomes lower than the discharging overcurrent detection voltage within the discharging overcurrent detection delay time (Typ. 12ms), it will not detect discharging overcurrent. Morever, the discharging overcurrent release delay time (Typ. 4ms) exists, too. The short detection delay time (Typ. 400us) decided internally exists, too. The discharging overcurrent release resistance (Typ. 50kohm) is built into between - terminal and SS terminal. In the state of discharging overcurrent or short, if the load is opened, - terminal is pulled down to the SS via the discharging overcurrent release resistance. Andwhenthe- terminal voltage becomes lower than the discharging overcurrent detection voltage, it will automatically release discahrging overcurrent or short state. if discharging overcurrent or short is detected, the discharging overcurrent release resistance turns ON. On the normal state (chargable and dischargable state), the discharging overcurrent release resistance is OFF. 4. Charge overcurrent detector (D4) In the state of chargable and dischargable, D4 monitors the voltage level of - pin. If the - terminal voltage becomes lower than charging overcurrent detection voltage (Typ ) by abnormal voltage or current charger, etc., it will detect charging overcurrent state. And then the COUT terminal outputs low level, so the internal charging control Nch MOSFET turn OFF, and it protects from large current charging. It release charging overcurrent state if the abnormal charger is disconnected and the load is connected. The charging overcurrent detection has delay time decided internally. When the - terminal voltage becomes lower than the charging overcurrent detection voltage, if the - terminal voltage becomes higher than the charging overcurrent detection voltage within the charging overcurrent detection delay time (Typ. 6ms), it will not detect charging overcurrent. Morever, the charging overcurrent release delay time (Typ. 4ms) exists, too

14 5. Over voltage charger detector By monitoring charger voltage between DD terminal and - terminal, and when the voltage becomes higher than over voltage charger detection voltage (Typ. 8.0), COUT output becomes low level and internal Nch MOSFET is turned to OFF. And when the voltage becomes lower than over voltage charger release voltage(typ. 7.3), COUT output becomes high level and internal Nch MOSFET is turned to ON. Please note that the larger value of R2, the larger detection voltage. There is no delay time of detection and release for this function

15 Application Circuit (Example) Application Hint R1 and C1 stabilize a supply voltage ripple. However, the detection voltage rises by the current of penetration in IC of the voltage detection when R1 is enlarged, so the value of R1 is adjusted to 1kohm or less. Moreover, adjust the value of C1 to 0.1uF or more to do the stability operation, please. R1 and R2 resistors are current limit resistance if a charger is connected reversibly or a highvoltage charger that exceeds the absolute maximum rating is connected. R1 and R2 may cause a power consumption will be over rating of power dissipation, therefore the `R1+R2` should be more than 1kohm. Moreover, if R2 is too enlarged, the charger connection release cannot be occasionally done after the overdischarge is detected, so adjust the value of R2 to 10kohm or less, please. C2 and C3 capacitors have effect that the system stability about voltage ripple or imported noise. After check characteristics, decide that these capacitors should be inserted or not, where should be inserted, and capacitance value, please

16 Timing Chart 1. Overcharge, Overvoltage charger operations Connect Charger Connect Load Connect Charger Connect Load Overcurrent Charger Open Charger, Connect Load DD DET1 REL1 t - DD DET3 SS DET4 t COUT tdet1 tdet1 tdet4 DD trel1 trel1 trel4 - t ICHARGE 0 t IDISCHARGE

17 2. Overdischarge, Discharging Overcurrent and Short operations Overcurrent DD Connect Load Connect Charger Connect Load Connect Charger Open Short Open REL2 DET2 t - DD SHORT DET3 SS t DOUT tdet2 tdet2 tdet3 tshort DD trel2 trel2 trel3 trel3 - t ICHARGE 0 t IDISCHARGE

18 Package Description D D1 e E E1 e1 TOP IEW SIDE IEW BURR SIDE θ A1 A 0.127±0.008 A2 FRONT IEW SEATING PLANE D3 0.4 REF X 4 REF MAX. L E REF. X b EXPOSED PAD REF REF REF REF. BTM IEW DETAIL X (3:1) DIMENSIONS SYMBOL MIN. NOM. MAX. A A A D D D REF. E E E REF. θ e BSC e BSC L b NOTE NOTE 1. LEAD BURR : ERTICAL MAX HORIZONTAL MAX BURR SIDE : ALL TOP SIDE 2. MOLD BURR & FLASH : PACKAGE OUT LINE BURR MAX EXPOSED PAD FLASH MAX PACKAGE WARPAGE MAX LEAD AND EXPOSED PAD PLATING : PURE TIN THICKNESS> 7.62~25.4um

19 Marking Contents Indicate 1'st Pin Model No. AYWLT Lot serial No. Date code Producing site

AOZ9250DI. Single-Cell Battery Protection IC with Integrated MOSFET. Features. General Description. Applications. Typical Applications Circuit

AOZ9250DI. Single-Cell Battery Protection IC with Integrated MOSFET. Features. General Description. Applications. Typical Applications Circuit Single-Cell Battery Protection IC with Integrated MOSFET General Description The AOZ9250DI is a battery protection IC with integrated dual common-drain N-channel MOSFET. The device includes accurate voltage

More information

UNISONIC TECHNOLOGIES CO., LTD UB261 Preliminary CMOS IC

UNISONIC TECHNOLOGIES CO., LTD UB261 Preliminary CMOS IC UNISONIC TECHNOLOGIES CO., LTD 1-CELL LITHIUM-ION/POLYMER BATTERY PROTECTION IC DESCRIPTION The UTC UB261 is a series of lithium-ion/lithium-polymer rechargeable battery protection ICs incorporating high

More information

VSS VDD. Applications. Li + Rechargeable Battery Pack

VSS VDD. Applications. Li + Rechargeable Battery Pack ADANCED INFORMATION HIGH ACCURACY SINGLE CHIP SOLUTION FOR 1-CELL Li+ BATTERY PACK Description The family is a single-chip protection solution specially designed for 1-cell Li + rechargeable battery pack

More information

BM192-VCEB-CE. One-Cell Li Battery Protectors. General Description. Features. Applications. Typical Application Circuit. Battery Pack.

BM192-VCEB-CE. One-Cell Li Battery Protectors. General Description. Features. Applications. Typical Application Circuit. Battery Pack. 一级代理 : 深圳市鼎瑞诚实业有限公司官方网站 :www.dingruicheng.com.cn BYD Microelectronics Co., Ltd. One-Cell Li Battery Protectors General Description The is protector for lithium-ion and lithium polymer rechargeable battery

More information

One-cell Lithium Battery Protection IC

One-cell Lithium Battery Protection IC General Description The battery protection IC is designed to protect lithium-ion / polymer battery from damage or degrading the lifetime due to over current for one-cell lithium-ion / polymer battery powered

More information

UNISONIC TECHNOLOGIES CO., LTD UB227 Advance CMOS IC

UNISONIC TECHNOLOGIES CO., LTD UB227 Advance CMOS IC UNISONIC TECHNOLOGIES CO., LTD 1-CELL LITHIUM-ION/POLYMER BATTERY PROTECTION IC DESCRIPTION The UTC UB227 is a series of lithium-ion/lithium-polymer rechargeable battery protection ICs incorporating high

More information

DW01AM. General Description. Features. Applications. Typical Application Circuits. Battery Pack

DW01AM. General Description. Features. Applications. Typical Application Circuits. Battery Pack General Description The are protectors for lithium-ion and lithium polymer rechargeable battery with high accuracy voltage detection. They can be used for protecting single cell lithium-ion or/and lithium

More information

UNISONIC TECHNOLOGIES CO., LTD UB24205 Preliminary CMOS IC

UNISONIC TECHNOLOGIES CO., LTD UB24205 Preliminary CMOS IC UNISONIC TECHNOLOGIES CO., LTD UB24205 Preliminary CMOS IC LITHIUM-ION/POLYMER BATTERY PROTECTION IC DESCRIPTION The UTC UB24205 is a lithium-ion / lithium-polymer rechargeable battery protection IC with

More information

LV51140T. Features High accuracy detection voltage Over-charge detection ±25mV Over-charge hysteresis. Specifications

LV51140T. Features High accuracy detection voltage Over-charge detection ±25mV Over-charge hysteresis. Specifications Ordering number : ENA1024 LV51140T CMOS IC 1-Cell Lithium-Ion Battery Protection IC Overview The LV51140T is protection IC for rechargeable Li-ion battery by high withstand voltage CMOS process. The LV51140T

More information

REV. 2.3 DW01+-DS-23_EN NOV Datasheet DW01+ One Cell Lithium-ion/Polymer Battery Protection IC

REV. 2.3 DW01+-DS-23_EN NOV Datasheet DW01+ One Cell Lithium-ion/Polymer Battery Protection IC REV. 2.3 DW01+-DS-23_EN NOV. 2006 Datasheet DW01+ One Cell Lithium-ion/Polymer Battery Protection IC Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei

More information

REV. 1.1 DW01A-DS-11_EN JUN FORTUNE Properties. Datasheet DW01A. One Cell Lithium-ion/Polymer Battery Protection IC. For Reference Only

REV. 1.1 DW01A-DS-11_EN JUN FORTUNE Properties. Datasheet DW01A. One Cell Lithium-ion/Polymer Battery Protection IC. For Reference Only REV. 1.1 DW01A-DS-11_EN JUN 2010 Datasheet DW01A One Cell Lithium-ion/Polymer Battery Protection IC Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei

More information

UNISONIC TECHNOLOGIES CO., LTD UB211C Preliminary CMOS IC

UNISONIC TECHNOLOGIES CO., LTD UB211C Preliminary CMOS IC UNISONIC TECHNOLOGIES CO., LTD UB211C Preliminary CMOS IC 1-CELL LITHIUM-ION/POLYMER BATTERY PROTECTION IC DESCRIPTION UTC UB211C is a series of lithium-ion / lithium-polymer rechargeable battery protection

More information

VCC GND AIC1811. Protection Circuit for One-Cell Lithium-Ion Battery

VCC GND AIC1811. Protection Circuit for One-Cell Lithium-Ion Battery FEATURES Reduction in Board Size due to Miniature Package SOT-2- and Less External Components. Ultra-Low Quiescent Current at 7µA (V CC =.V). Ultra-Low Power-Down Current at 0.µA (V CC =2.V). Precision

More information

FORTUNE' Properties. For Reference Only. Datasheet DW01M. One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET

FORTUNE' Properties. For Reference Only. Datasheet DW01M. One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET REV. 1.9 DW01M-DS-19_EN May 2014 Datasheet DW01M One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET Fortune Semiconductor Corporation 富晶電子股份有限公司 23F., No.29-5,Sec. 2, Zhongzheng E.

More information

NCP800. Lithium Battery Protection Circuit for One Cell Battery Packs

NCP800. Lithium Battery Protection Circuit for One Cell Battery Packs Lithium Battery Protection Circuit for One Cell Battery Packs The NCP800 resides in a lithium battery pack where the battery cell continuously powers it. In order to maintain cell operation within specified

More information

A4001. AiT Semiconductor Inc. ORDERING INFORMATION TYPICAL APPLICATION

A4001. AiT Semiconductor Inc.   ORDERING INFORMATION TYPICAL APPLICATION DESCRIPTION This protection IC was developed for use with lithium-ion/lithium polymer 1-cell serial batteries. It detects overcharge, overdischarge, discharge overcurrent and other abnormalities, and functions

More information

1) Range and accuracy of detection/release voltage (Unless otherwise specified, Topr=+25 C) Item Range Accuracy

1) Range and accuracy of detection/release voltage (Unless otherwise specified, Topr=+25 C) Item Range Accuracy 3-5 cells Li-ion/polymer battery protection IC MM3575 Series Description The MM3575 series are protection IC using high voltage CMOS process for overcharge,overdischarge and overcurrent protection of the

More information

VCC GND AIC1821. Protection Circuit for One-Cell Lithium-Ion Battery

VCC GND AIC1821. Protection Circuit for One-Cell Lithium-Ion Battery One-Cell Lithium-Ion Battery Protection IC FEATURES Reduction in Board Size due to Miniature Package SOT-2 and Less External Components. Ultra-Low Quiescent Current at 7µA (V CC =3.V). Ultra-Low Power-Down

More information

REV. 1.2 FS326E+G-DS-12_EN May FORTUNE' Properties. Datasheet FS326E+G. One Cell Lithium-ion/Polymer Battery Protection IC. For Reference Only

REV. 1.2 FS326E+G-DS-12_EN May FORTUNE' Properties. Datasheet FS326E+G. One Cell Lithium-ion/Polymer Battery Protection IC. For Reference Only REV. 1.2 FS326E+G-DS-12_EN May 2014 Datasheet FS326E+G One Cell Lithium-ion/Polymer Battery Protection IC Fortune Semiconductor Corporation 富晶電子股份有限公司 23F., No.29-5,Sec. 2, Zhongzheng E. Rd, Danshui Dist,

More information

S-8242B Series BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK. Rev.1.4_00. Features. Applications. Packages. Seiko Instruments Inc.

S-8242B Series BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK. Rev.1.4_00. Features. Applications. Packages. Seiko Instruments Inc. Rev.1.4_00 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK The are protection ICs for 2-serial-cell lithium-ion/lithium polymer rechargeable batteries and include high-accuracy voltage detectors and delay

More information

Parameter Symbol Limit Unit IDM 20 A T A = PD T A =100

Parameter Symbol Limit Unit IDM 20 A T A = PD T A =100 Features: Super high dense cell design for low R DS(ON) Rugged and reliable Surface Mount Package B VDSS =20V, R DS(ON) =24.5mΩ ID=6A Application DC-DC converters Power management in portable and Battery-powered

More information

S-8241 Series. Rev.3.5_10 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK. Features. Packages. Applications

S-8241 Series. Rev.3.5_10 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK. Features. Packages. Applications Rev.3.5_10 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK The S-8241 is a series of lithium-ion/lithium polymer rechargeable battery protection ICs incorporating high-accuracy voltage detection circuits

More information

HT70XX Voltage Detector

HT70XX Voltage Detector oltage Detector Features Low power consumption Built-in high-stability reference source Built-in hysteresis characteristic Low temperature coefficient TO-92 package Applications Battery checkers Level

More information

S-8244 Series. Rev.0.8 BATTERY PROTECTION IC FOR SERIES CONNECTION OF 1 TO 4 CELLS (SECONDARY PROTECTION) Features. Applications

S-8244 Series. Rev.0.8 BATTERY PROTECTION IC FOR SERIES CONNECTION OF 1 TO 4 CELLS (SECONDARY PROTECTION) Features. Applications Rev.0.8 BATTERY PROTECTION IC FOR SERIES NNECTION OF 1 TO 4 CELLS (SENDARY PROTECTION) S-8244 Series The S-8244 Series is used for secondary protection of lithium-ion batteries with from one to four cells,

More information

S-8242A Series BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK. Rev.3.0_00. Features. Applications. Packages. Seiko Instruments Inc.

S-8242A Series BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK. Rev.3.0_00. Features. Applications. Packages. Seiko Instruments Inc. Rev.3.0_00 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK The are protection ICs for 2-serial-cell lithium-ion/lithium-polymer rechargeable batteries and include high-accuracy voltage detectors and delay

More information

Overdischarge detection voltage. 5 mv- step. Overdischarge release voltage

Overdischarge detection voltage. 5 mv- step. Overdischarge release voltage Rev.3.2_10 BATTERY PROTECTION IC (FOR A 2-SERIAL-CELL PACK) S-8232 Series The 8232 is a series of lithium-ion rechargeable battery protection ICs incorporating high-accuracy voltage detection circuits

More information

PE2302C. N-Channel Enhancement Mode Power MOSFET 2302C DESCRIPTION GENERAL FEATURES. Application. Page 1

PE2302C. N-Channel Enhancement Mode Power MOSFET 2302C DESCRIPTION GENERAL FEATURES. Application. Page 1 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE30C uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is

More information

AIC1802 R6 1K. *C TC & C TD are optional for delay time adjustment. **R1 & R2: Refer application informations.

AIC1802 R6 1K. *C TC & C TD are optional for delay time adjustment. **R1 & R2: Refer application informations. Two-Cell Lithium-Ion Battery Protection IC FEATURES Ultra-Low Quiescent Current at 10µA (V CC =7V, V C =3.5V). Ultra-Low Power-Down Current at 0.2µA (V CC =3.8V, V C =1.9V). Wide Supply Range: 2 to 18V.

More information

NJU7706/07 VOLTAGE DETECTOR

NJU7706/07 VOLTAGE DETECTOR OLTAGE DETECTOR GENERAL DESCRIPTION The /07 is a high precision voltage detector with a built-in delay time generator of fixed time. The /07 is useful for preventing malfunction of microprocessor or DSP

More information

PE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted)

PE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted) N-Channel Enhancement Mode Power MOSFET Description The PE6018 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It D can be used in a wide variety of applications.

More information

R4 C4. Protection Circuit for Three-Cell Lithium-Ion Battery Pack

R4 C4. Protection Circuit for Three-Cell Lithium-Ion Battery Pack Three-Cell Lithium-Ion Battery Protection IC FEATURES Ultra-Low Quiescent Current at 13µA (V CELL =3.5V). Ultra-Low Power-Down Current at 1.3µA (V CELL =2.3V) Wide Supply Voltage Range: 2V to 18V. Precision

More information

LM3645 Lithium-Ion Battery Pack Protection Circuit

LM3645 Lithium-Ion Battery Pack Protection Circuit LM3645 Lithium-Ion Battery Pack Protection Circuit General Description The LM3645 Lithium Protection Integrated Circuit resides inside a 3.6V Lithium-Ion battery pack consisting of a single cell or multiple

More information

EFC2J013NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.8 mω, 17 A, Dual N-Channel

EFC2J013NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.8 mω, 17 A, Dual N-Channel Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 5.8 mω, 17 A, Dual N-Channel This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches

More information

MP2671 Li-ion Battery Charger Protection Circuit

MP2671 Li-ion Battery Charger Protection Circuit The Future of Analog IC Technology MP2671 Li-ion Battery Charger Protection Circuit DESCRIPTION The MP2671 is a high-performance single cell Li-Ion/Li-Polymer battery charger protection circuit. By integrating

More information

20V P-Channel Power MOSFET

20V P-Channel Power MOSFET UM231 2V P-Channel Power MOSFET General Description UM231S SOT23-3 UM231P SOT323 The UM231 is a low threshold P-channel MOSFET, have extremely low on-resistance. This benefit provides the designer with

More information

S-8254 Series BATTERY PROTECTION IC FOR 3-SERIAL OR 4-SERIAL-CELL PACK. Rev.2.3_00. Features. Applications. Package

S-8254 Series BATTERY PROTECTION IC FOR 3-SERIAL OR 4-SERIAL-CELL PACK. Rev.2.3_00. Features. Applications. Package Rev.2.3_00 BATTERY PROTECTION IC FOR 3-SERIAL OR 4-SERIAL-CELL PACK S-8254 Series The S-8254 series is a protection IC for 3-serial or 4-serial cell lithium ion rechargeable batteries and includes a high-accuracy

More information

5- to 10-Cell Li+ Protector with Cell Balancing

5- to 10-Cell Li+ Protector with Cell Balancing Rev 0; 4/08 5- to 10-Cell Li+ Protector with Cell Balancing General Description The provides full charge and discharge protection for 5- to 10-cell lithium-ion (Li+) battery packs. The protection circuit

More information

MP5410 Low Start-up Voltage Boost Converter with Four SPDT Switches

MP5410 Low Start-up Voltage Boost Converter with Four SPDT Switches The Future of Analog IC Technology DESCRIPTION The MP5410 is a high efficiency, current mode step-up converter with four single-pole/doublethrow (SPDT) switches designed for low-power bias supply application.

More information

HY2213 Datasheet. 1 Cell Li-ion/Polymer Battery Charge Balance IC HYCON Technology Corp. DS-HY2213-V05_EN

HY2213 Datasheet. 1 Cell Li-ion/Polymer Battery Charge Balance IC HYCON Technology Corp.  DS-HY2213-V05_EN Datasheet Cell Li-ion/Polymer Battery Charge Balance IC 0-0 HYCON Technology Corp wwwhycontekcom Table of Contents GENERAL DESCRIPTION 4 FEATURE 4 3 APPLICATION 4 4 BLOCK DIAGRAM ORDERING INFORMATION MODEL

More information

Single Channel Protector in an SOT-23 Package ADG465

Single Channel Protector in an SOT-23 Package ADG465 a Single Channel Protector in an SOT-23 Package FEATURES Fault and Overvoltage Protection up to 40 V Signal Paths Open Circuit with Power Off Signal Path Resistance of R ON with Power On 44 V Supply Maximum

More information

Non-Synchronous PWM Boost Controller for LED Driver

Non-Synchronous PWM Boost Controller for LED Driver Non-Synchronous PWM Boost Controller for LED Driver General Description The is boost topology switching regulator for LED driver. It provides built-in gate driver pin for driving external N-MOSFET. The

More information

Release condition of discharge overcurrent status is selectable: Load disconnection, charger connection

Release condition of discharge overcurrent status is selectable: Load disconnection, charger connection www.ablicinc.com BATTERY PROTECTION IC FOR 1-CELL PACK ABLIC Inc., 2013-2016 Rev.1.1_03 The is a protection IC for 1-cell lithium-ion / lithium polymer rechargeable batteries and includes high-accuracy

More information

Device Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

BF90210DND-GE. 20V N-Channel MOSFET. General Description

BF90210DND-GE. 20V N-Channel MOSFET. General Description BYD Microelectronics Co., Ltd. 20V N-Channel MOSFET General Description The is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection

More information

NOT RECOMMENDED FOR NEW DESIGN. S-8233A Series BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK. Features. Applications. Package

NOT RECOMMENDED FOR NEW DESIGN. S-8233A Series BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK. Features. Applications. Package www.sii-ic.com BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK Seiko Instruments Inc., 1997-2013 Rev.6.0_01 The is a series of lithium-ion rechargeable battery protection ICs incorporating high-accuracy voltage

More information

S-8233A Series BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK. Features. Applications. Package

S-8233A Series BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK. Features. Applications. Package www.sii-ic.com BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK Seiko Instruments Inc., 1997-2010 Rev.6.0_00 The is a series of lithium-ion rechargeable battery protection ICs incorporating high-accuracy voltage

More information

P-Channel 30 V (D-S) MOSFET with Schottky Diode

P-Channel 30 V (D-S) MOSFET with Schottky Diode P-Channel 3 (D-S) MOSFET with Schottky Diode SiA87EDJ PRODUCT SUMMARY DS () R DS(on) ( ) Max. I D (A) - 3.5 at GS = - -.5 a.8 at GS = -.5 -.5 a.9 at GS = - 3.7 -.5 a.5 at GS = -.5-3 SCHOTTY PRODUCT SUMMARY

More information

S-8233A SERIES. Features. Applications BATTERY PROTECTION IC (FOR A 3-SERIAL-CELL PACK) Seiko Instruments Inc. 1. Rev.2.0

S-8233A SERIES. Features. Applications BATTERY PROTECTION IC (FOR A 3-SERIAL-CELL PACK) Seiko Instruments Inc. 1. Rev.2.0 BATTERY PROTECTION IC (FOR A 3-SERIAL-CELL PACK) S-8233A SERIES The 8233A is a series of lithium-ion rechargeable battery protection ICs incorporating high-accuracy voltage detection circuits and delay

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

BF9024SPZ-X/XS. 20V P-Channel MOSFET. General Description. Features. Absolute Maximum Ratings (Ta = 25 ) Ordering Information

BF9024SPZ-X/XS. 20V P-Channel MOSFET. General Description. Features. Absolute Maximum Ratings (Ta = 25 ) Ordering Information BYD Microelectronics Co., Ltd. 20V P-Channel MOSFET General Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load

More information

SYSTEM RESET IC WITH DELAY CIRCUIT

SYSTEM RESET IC WITH DELAY CIRCUIT SYSTEM RESET IC WITH DELAY CIRCUIT GENERAL DESCRIPTION The is a system reset IC with built-in delay circuit that monitors the status of a power line, and outputs a reset signal to the microcomputer. The

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers

More information

Supertex inc. TN0604. N-Channel Enhancement-Mode Vertical DMOS FET. Features. General Description. Applications. Ordering Information.

Supertex inc. TN0604. N-Channel Enhancement-Mode Vertical DMOS FET. Features. General Description. Applications. Ordering Information. TN64 N-Channel Enhancement-Mode ertical DMOS FET Features Low threshold (1.6 max.) High input impedance Low input capacitance (14pF typical) Fast switching speeds Low on-resistance Free from secondary

More information

SKY2000. Data Sheet DUAL-TRACK MAGNETIC STRIPE F2F DECODER IC. For More Information. Solution Way Co., Ltd

SKY2000. Data Sheet DUAL-TRACK MAGNETIC STRIPE F2F DECODER IC. For More Information. Solution Way Co., Ltd SKY2000 Data Sheet MAGNETIC STRIPE F2F DECODER IC For More Information www.solutionway.com ydlee@solutionway.com Tel:+82-31-605-3800 Fax:+82-31-605-3801 1 Introduction 1. Description..3 2. Features...3

More information

AOC V Common-Drain Dual N-Channel MOSFET

AOC V Common-Drain Dual N-Channel MOSFET OC878 Common-Drain Dual N-Channel MOSFET General Description Trench Power MOSFET technology Low R SS(ON) With ESD protection to improve battery performance and safety Common drain configuration for design

More information

Electrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol

Electrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

AO6801 Dual P-Channel Enhancement Mode Field Effect Transistor

AO6801 Dual P-Channel Enhancement Mode Field Effect Transistor May 22 AO68 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO68 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable

More information

MP MHz, 350mA Boost Converter

MP MHz, 350mA Boost Converter The Future of Analog IC Technology MP3209 1.4MHz, 350mA Boost Converter DESCRIPTION The MP3209 is a current mode step up converter intended for small, low power applications. The MP3209 switches at 1.4MHz

More information

MP V, 2.5A Integrated Photo Flash Charger with IGBT Driver and Quench

MP V, 2.5A Integrated Photo Flash Charger with IGBT Driver and Quench The Future of Analog IC Technology MP3352 60V, 2.5A Integrated Photo Flash Charger with IGBT Driver and Quench DESCRIPTION The MP3352 is a fast, highly efficient, precision high-voltage photo-flash charger

More information

Pin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON)

Pin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON) Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense

More information

NJU BIT SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION PACKAGE OUTLINE PIN CONFIGURATION FEATURES BLOCK DIAGRAM

NJU BIT SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION PACKAGE OUTLINE PIN CONFIGURATION FEATURES BLOCK DIAGRAM 16-BIT SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION The NJU3715 is a 16-bit serial to parallel converter especially applying to MPU outport expander. The effective outport assignment of MPU is available

More information

Taiwan Goodark Technology Co.,Ltd TGD01P30

Taiwan Goodark Technology Co.,Ltd TGD01P30 TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

PS8205A. 20V Dual Channel NMOSEFT. ProsPower Microelectronics Co., Ltd. Revision : 1.0 Update Date : Apr. 2011

PS8205A. 20V Dual Channel NMOSEFT. ProsPower Microelectronics Co., Ltd. Revision : 1.0 Update Date : Apr. 2011 20V Dual Channel NMOSEFT Revision : 1.0 Update Date : Apr. 2011 1. General Description The PS8205A uses advanced trench technology and design to provide excellent Rds(on) with low gate charge. This device

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC s advanced technology. This technology allows a minimum on-state resistance,

More information

Enhancement Mode N-Channel Power MOSFET

Enhancement Mode N-Channel Power MOSFET OSG65R900xTF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCE30P50G NCE30P50G DFN 5x6 EP - - -

Device Marking Device Device Package Reel Size Tape width Quantity NCE30P50G NCE30P50G DFN 5x6 EP - - - http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide

More information

Device Marking Device Device Package Reel Size Tape width Quantity 0102 NCE0102 SOT-23 Ø180mm 8 mm 3000 units

Device Marking Device Device Package Reel Size Tape width Quantity 0102 NCE0102 SOT-23 Ø180mm 8 mm 3000 units Pb Free Product http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can

More information

NOT RECOMMENDED FOR NEW DESIGN. S-8253A/B Series BATTERY PROTECTION IC FOR 2-SERIAL OR 3-SERIAL-CELL PACK. Features. Applications.

NOT RECOMMENDED FOR NEW DESIGN. S-8253A/B Series BATTERY PROTECTION IC FOR 2-SERIAL OR 3-SERIAL-CELL PACK. Features. Applications. www.sii-ic.com BATTERY PROTECTION IC FOR 2-SERIAL OR 3-SERIAL-CELL PACK Seiko Instruments Inc., 2003-2010 Rev.5.0_00 The are protection ICs for 2-serial or 3-serial cell lithium-ion rechargeable batteries

More information

RU6888R. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO-220

RU6888R. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO-220 N-Channel Advanced Power MOSFET MOSFET Features 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100%

More information

2A, 23V, 340KHz Synchronous Step-Down Converter

2A, 23V, 340KHz Synchronous Step-Down Converter 2A, 23, 340KHz Synchronous Step-Down Converter FP6188 General Description The FP6188 is a synchronous buck regulator with integrated two 0.13Ω power MOSFETs. It achieves 2A continuous output current over

More information

AO3401 P-Channel Enhancement Mode Field Effect Transistor

AO3401 P-Channel Enhancement Mode Field Effect Transistor July 2 AO34 P-Channel Enhancement Mode Field Effect Transistor General Description The AO34 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages

More information

NCE3415Y. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application

NCE3415Y. NCE P-Channel Enhancement Mode Power MOSFET.   Description. General Features. Application http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low

More information

MCH6644 MCH6644. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company

MCH6644 MCH6644. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company Ordering number : ENN899 MCH6644 MCH6644 Features N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications The MCH6644 incorporates an N-channel MOSFET and a P-channel MOSFET

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 171A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement mode power MOSFET using UTC s advanced technology to

More information

Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel)

Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω (typ.) @ = V R DS(ON) = 8mΩ (typ.) @ = 4.5V -4V/-5A, R DS(ON) = 35mΩ (typ.) @ =-V R DS(ON) = 48mΩ (typ.)

More information

N-Channel Power MOSFET

N-Channel Power MOSFET OSG65R290xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching

More information

Package Code. Handling Code. Assembly Material

Package Code. Handling Code. Assembly Material P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable

More information

Piezo-sounder Driver with Multi-mode charge pump. C 2 =0.1uF. C 1 =0.1uF CP1 CN1 CP2 CN2. Charge Pump (1x / 2x / 3x) Control Logic

Piezo-sounder Driver with Multi-mode charge pump. C 2 =0.1uF. C 1 =0.1uF CP1 CN1 CP2 CN2. Charge Pump (1x / 2x / 3x) Control Logic Piezo-sounder Driver with Multi-mode charge pump NJU72501 GENERAL DESCRIPTION The NJU72501 is a switching driver with multi mode charge pump for piezo-sounder. It can drive outputs up to 18pp from 3 supply.

More information

P HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON)

P HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON) N-Channel Enhancement Mode MOSFET Features Pin Description 60V / 120A, R DS(ON) = 6.0 mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D

More information

HY2131 Specification. Protection IC for 2/3-Cell Lithium Ion/Lithium Polymer. Batteries in Series (For Secondary Protection)

HY2131 Specification. Protection IC for 2/3-Cell Lithium Ion/Lithium Polymer. Batteries in Series (For Secondary Protection) Specification Protection C for 2/3-Cell Lithium on/lithium Polymer Batteries in Series (For Secondary Protection) DS-HY2131-04_EN Protection C for 2/3-Cell Lithium on/lithium Polymer Batteries in Series

More information

Device Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm

Device Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

S-8239A Series OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK. Features. Applications. Package. Seiko Instruments Inc. 1.

S-8239A Series OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK. Features. Applications. Package. Seiko Instruments Inc. 1. www.sii-ic.com OVERCURRENT MONITORING IC FOR MULTI-SERIAL-CELL PACK Seiko Instruments Inc., 2013 Rev.1.1_00 The is an overcurrent monitoring IC for multi-serial-cell pack including high-accuracy voltage

More information

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of

More information

UNISONIC TECHNOLOGIES CO., LTD UT6401

UNISONIC TECHNOLOGIES CO., LTD UT6401 UNISONIC TECHNOLOGIES CO., LTD UT64 5A, 3V P-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UTC UT64 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed,

More information

UNISONIC TECHNOLOGIES CO., LTD UT4411

UNISONIC TECHNOLOGIES CO., LTD UT4411 UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information

PJM8205DNSG Dual N Enhancement Field Effect Transistor

PJM8205DNSG Dual N Enhancement Field Effect Transistor DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection

More information

N-Channel Power MOSFET

N-Channel Power MOSFET OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching

More information

Package Code. Date Code YYXXX WW

Package Code. Date Code YYXXX WW N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S

More information

UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC QS8M11 uses UTC s advanced technology to provide the customers with low voltage

More information

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers

More information

Package Code P : TO-220FB-3L. Date Code YYXXX WW

Package Code P : TO-220FB-3L. Date Code YYXXX WW N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology

More information

2.0% (T j = 40 C to 150 C) 120 mv typ. (5.0 V output product, I OUT = 100 ma) Output current: Possible to output 200 ma (V IN = V OUT(S) 1.

2.0% (T j = 40 C to 150 C) 120 mv typ. (5.0 V output product, I OUT = 100 ma) Output current: Possible to output 200 ma (V IN = V OUT(S) 1. www.ablicinc.com AUTOMOTIE, 125 C OPERATION, 36 INPUT, 2 ma, BUILT-IN WATCHDOG TIMER CIRCUIT OLTAGE REGULATOR TH RESET FUNCTION ABLIC Inc., 214-217 The, developed by using high-withstand voltage CMOS technology,

More information

P HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application

P HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G

More information

Overdischarge detection voltage. 5 mv- step. Overdischarge release voltage

Overdischarge detection voltage. 5 mv- step. Overdischarge release voltage Rev.4.1_00 BATTERY PROTECTION IC (FOR A 2-SERIAL-CELL PACK) S-8232 Series The 8232 is a series of lithium-ion rechargeable battery protection ICs incorporating high-accuracy voltage detection circuits

More information

Device Marking Device Device Package Reel Size Tape width Quantity HM4884A HM4884A SOP Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity HM4884A HM4884A SOP Parameter Symbol Limit Unit Dual N-Channel Enhancement Mode Power MOSFET Description The HM4884A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z

UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z UNISONIC TECHNOLOGIES CO., LTD UTT6NZ 6A, V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6NZ is a N-channel enhancement mode Power FET, it uses UTC s advanced technology to provide customers a minimum

More information

AM8205 MOSFET+SCHOTTKY DIODE 20V DUAL N-CHANNEL ENHANCEMENT MODE

AM8205 MOSFET+SCHOTTKY DIODE 20V DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high

More information

RT mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator. General Description. Features. Applications. Ordering Information. Marking Information

RT mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator. General Description. Features. Applications. Ordering Information. Marking Information 3mA, Ultra-Low Noise, Ultra-Fast CMOS LDO Regulator General Description The RT9193 is designed for portable RF and wireless applications with demanding performance and space requirements. The RT9193 performance

More information

AOCA36102E 22V Common-Drain Dual N-Channel MOSFET

AOCA36102E 22V Common-Drain Dual N-Channel MOSFET Common-Drain Dual N-Channel MOSFET General Description Trench Power MOSFET Technology Low R SS(ON) With ESD protection to improve battery performance and safety Common drain configuration for design simplicity

More information