DISTORTION analysis has gained renewed interest because

Size: px
Start display at page:

Download "DISTORTION analysis has gained renewed interest because"

Transcription

1 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: ANALOG AND DIGITAL SIGNAL PROCESSING, VOL. 46, NO. 3, MARCH Disttion in Elementary Transist Circuits Willy Sansen, Fellow, IEEE Abstract In this paper the disttion components are defined f elementary transist stages such as a single-transist amplifier a differential pair using bipolar transists MOST s. Meover, the influence of feedback is examined. Numerical examples are given f sake of illustration. Index Terms Amplifiers, disttion, feedback, intercept point. I. INTRODUCTION DISTORTION analysis has gained renewed interest because it is responsible f the generation of spurious frequency bs in telecommunication circuits. Therefe, it is reviewed starting with the most elementary circuit blocks [2], [4] [6]. Disttion actually refers to the disttion of a voltage current wavefm as it is displayed versus time, i.e., as seen on a oscilloscope. Any difference between the shape of the output wavefm versus time the input wavefm, except f a scaling fact, is called disttion. F example, the flattening of a sinusoidal wavefm is disttion. The injection of a spike on a sinusoidal wavefm is called disttion as well. Several kinds of disttion occur. They are defined first. Fig. 1. Application of a high-pass filter causes linear disttion because of the reduction of the low frequencies. Fig. 2. Application of a low-pass filter causes linear disttion because of the reduction of the high frequencies. A. Linear Nonlinear Disttion Linear disttion is caused by the application of a linear circuit, with a nonconstant amplitude phase characteristic. As an example, the application of a high-pass filter (of first der) to a square wavefm causes disttion, as shown in Fig. 1. In a similar way, the application of a low-pass filter reduces the high-frequency content in the output wavefm, as shown in Fig. 2. Nonlinear disttion is caused by a nonlinear transfer characteristic. F example, the application of a sinusoidal wavefm to the exponential characteristic of a bipolar transist causes a sharpening of one top flattening of the other one (see Fig. 3). This cresponds to the generation of a number of harmonic frequencies of the input sinusoidal wavefm. These are the nonlinear disttion components. B. Weak Hard Disttion When the nonlinear transfer characteristic has a gradual change of slope (as shown in Fig. 3), then the quasi-sinusoidal wavefm at the output is still continuous. This is not the case when the transfer characteristic has a sharp edge, as shown in Fig. 4 f a class B amplifier. Part of the sinusoidal wavefm Manuscript received July 31, 1997; revised June 15, This paper was recommended by Guest Edit A. Rodriguez-Vazquez. The auth is with ESAT-MICAS, K.U. Leuven, Leuven, Belgium. Publisher Item Identifier S (99) Fig. 3. Generation of nonlinear disttion caused by the nonlinear i C v BE characteristic. is then simply cut off, leaving two sharp cners. These cners generate a large number of high-frequency harmonics. They are sources of hard disttion. In the case of weak disttion, the harmonics gradually disappear when the signal amplitude becomes smaller. They are never zero, however. They can easily be calculated from a Tayl series expansion around the quiescent operating /99$ IEEE

2 316 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: ANALOG AND DIGITAL SIGNAL PROCESSING, VOL. 46, NO. 3, MARCH 1999 Fig. 5. Disttion components versus nmalized input voltage. Fig. 4. Generation of hard nonlinear disttion. point, as will be carried out in next paragraph. Hard disttion harmonics, on the other h, suddenly disappear when the amplitude of the sinusoidal wavefm falls below the threshold, i.e., the edge of the transfer characteristic. Also they are much me difficult to calculate. Since they can be avoided altogether by limiting the output signal amplitudes to sufficiently low levels, they will not be discussed any further. In this paper, the nonlinear disttion will be calculated f elementary bipolar MOST amplifier buffer stages. Also the influence of negative feedback is derived. First, however, the several definitions have to be reviewed to describe the weak nonlinear disttion components. II. WEAK-DISTORTION COMPONENTS Let us consider an amplifier with a weak nonlinearity as in Fig. 3. Both input output signals vary with time. They are denoted by, in shth,. At low frequencies, the output of this amplifier can be expressed in terms of its input by a power series Coefficient represents the dc component of output signal. Coefficient represents the linear gain of the amplifier, whereas coefficients, represent its disttion. Coefficients, can be obtained from the analytic expression of the function as given by Application of a cosine wavefm of frequency amplitude at the input of that amplifier yields output components at all multiples of. It is obtained by trigonometric manipulation. Under low-disttion conditions, only second- third-der disttion components are considered. By use of the expressions (1) (2) (3) (1) thus becomes Odd-der disttion, especially, thus modifies the signal component at the fundamental frequency. Term can be neglected, however, with respect to, provided the signal amplitude is sufficiently small. Harmonic disttion is then defined as follows. The th harmonic disttion (HD ) is defined as the ratio of the component of frequency to the one at the fundamental. Application to (4) yields HD HD (4) (5a) (5b) It is imptant to note that HD is proptional to HD to. Increasing the input signal level by 1 db thus increases the HD by 1 db the HD by 2 db. These relationships hold true f all values of, which are not too large. This is the region where the so-called low-disttion conditions are valid. F even larger values of, the values of HD HD flatten off with increasing as shown in Fig. 5. In this paper, the analyzes are limited to the region of low disttion, i.e., where is sufficiently small, i.e., where HD is proptional to HD to. Also the total harmonic disttion THD is given by THD HD HD (5c) It is not very useful as it does not give a clear dependence on the input signal level.

3 SANSEN: DISTORTION IN ELEMENTARY TRANSISTOR CIRCUITS 317 Application of the sum of two cosine wavefms of frequencies both of amplitude at the input gives rise to output signal components at all combinations of, their multiples. Under low-disttion conditions, the number of terms can be reduced to the ones caused by coefficients only. They are mapped versus frequency in Fig. 6(a) f (10 MHz) (11 MHz). A real frequency spectrum f frequencies MHz is shown in Fig. 6(b). Second-der intermodulation disttion ( ) is then defined by the ratio of the component at frequency to the one at. Under low-disttion conditions (6a) Third-der intermodulation disttion ( ) can be detected at the frequencies [see Fig. 6(a)]. It is given by the ratio of the component at frequency ( one of the other three frequencies), which is, to the fundamental, which is, as given by (6b) Comparison of the four equations above shows that HD (7a) HD (7b) Under low-disttion conditions, there is thus a one-toone crespondence between harmonic intermodulation disttion. It is thus sufficient to specify only one of them. Note that two of the four equal components, i.e., the ones at the frequencies, occur closely to the two fundamentals. This is one reason why they are me imptant than the HD components. In music signals f instance, it is quite conceivable that two peaks which are close together in frequency, generate intermodulation products in the same frequency range. At high frequencies, these products may already be reduced by the amplitude-frequency characteristic. In Fig. 6(b), the peaks are clearly visible at frequencies MHz. The is thus about 40 db. The other two components around 30 MHz are already heavily attenuated (not in the picture). A second reason why the measurement of is preferred above the one of HD is that the value of is three times larger than the one of HD hence easier to measure. F these reasons, the value of is always preferred. Another imptant characteristic often used point is the intercept,. It is the value of the input signal where the extrapolated curves of the components of the fundamental coincide. This is shown in Fig. 7. The output components at the fundamental frequencies at the frequencies are plotted versus the input voltage. They are given by, respectively, (note that is again dimensionless but that has as dimension). is the ratio of both components. The point where both components coincide is. It is thus also the point where (a) (b) Fig. 6. (a) Second- third-der harmonic intermodulation components. (b) Intermodulation disttion of a 10.7 MHz filter [3].. This point is easy to calculate from (6b) is given by (8) Obviously, the smaller, the larger the value of. Another related measure f the disttion is the Intermodulation free dynamic range (FDR ). The dynamic range is

4 318 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: ANALOG AND DIGITAL SIGNAL PROCESSING, VOL. 46, NO. 3, MARCH 1999 db Fig. 7. Fundamental 3 components versus input voltage. the ratio of the maximum output signal to the output noise, as shown in Fig. 7. It is thus given by DR DR (9) in which is the input noise (in ). The FDR is the largest possible DR without disttion. It is thus obtained at the input voltage where the output noise equals the component (see Fig. 7), where The difference between both is thus almost 10 db. The measurement of the 1 db compression point is thus an easy way to obtain the value of. There are several other ways to describe the disttion caused by coefficients such as cross-modulation disttion, triple beat, etc. There is nevertheless always a constant relationship of the type (7) between them. Therefe, only one me disttion is shtly discussed. It is the cross-modulation disttion. F the determination of cross-modulation disttion, again, two carrier frequencies are required. The first one, however, is modulated by a modulating signal at low frequency. The modulation index, which is ratio of the amplitude of the modulating signal to the one of the carrier, is denoted by. A nonlinear transfer characteristic causes the modulation to be transferred from the first carrier to the other one. As a result, the second carrier is modulated as well. This causes mixing of the channels in cable TV, etc., is thus to be avoided. The modulation index of the other channel is a measure of the disttion, is called the cross-modulation disttion. It is given by which yields Substitution of this value in (9) finally gives FDR (10a) CM (12a) CM (12b) Note that CM is only generated by the third-der terms of the power series, which describe the nonlinearity. Since it is closely related to, it will not be discussed any further. FDR (10b) III. DISTORTION IN A BOLAR TRANSISTOR AMPLIFIER In a bipolar transist, the collect current is controlled by the base emitter voltage as given by FDR An alternative, albeit less accurate, way to characterize disttion is the 1 db compression point (see Fig. 7). It is the value of where the fundamental component is compressed by 1 db, is denoted by. This value can be approximately calculated from (4). Indeed, the compression is caused by the second term (in ) of the coefficient of. A reduction of 1 db is a reduction to The resultant value of is thus about given by (11) (13) in which is the collect saturation current (see [1, Ch. 1]) mv at 29 C ( 302 K). The transist is biased at a specific dc value of, i.e., in quiescent point of the characteristic (see Fig. 3). A small variation of this voltage causes a variation in collect current. These variations ac components of the collect current the base emitter voltage can be expressed as given by (14)

5 SANSEN: DISTORTION IN ELEMENTARY TRANSISTOR CIRCUITS 319 Expression (13) thus results in (15) After division of both terms by the value of the quiescent current, we obtain (16) with, which is called the relative current swing. It is the current variation in the transist, nmalized to the quiescent dc current. It is a measure of the fraction of the dc current in the transist, which is used to generate ac output signal. It will be used throughout this section to compare disttion perfmance. F small peak base emitter voltages, the exponential of (16) can be exped in a Tayl series. Indeed, f, we know that application of this expansion to (16) yields (17) (18) in which is the peak value of the relative current swing, is the peak value of the ac base emitter input signal. F small input signals, only the first term in (18) has to be retained, which leads to (19) which is well expected. Meover, in first der, the peak value of the relative current swing is derived from the peak input voltage as given by (20) Finally, identification of (18) with (1) shows that f, the coefficients are,,,. Use of the (5) (10) substitution of by as given by (20) yields HD (21a) HD (21b) F example, a peak ac current of 100 A in a bipolar transist, carrying 1 ma, causes a peak relative current swing of, % ( HD %), also % ( HD %). F this ac current, a peak input voltage is required of only 2.6 mv to 1.84 mv. A larger peak current swing of 0.5 leads to %, f which an input signal amplitude of 9.2 mv is sufficient. F k, the voltage gain then equals 200. Finally, the value of the on the scale of the current swing (22) on the input voltage scale. This cresponds with an input voltage of 73 mv. This is quite small. A bipolar transist with 1 ma has a ms. With a base resist of, its equivalent input noise is the noise of (see [1]). This cresponds with 1.56 nv Hz. F a bwidth of 200 khz, the noise level V. As a result FDR 67 db. It is imptant to note that disttion components can always be described by means of the input voltage drive by the current swing. The latter way has a number of advantages. The current swing already includes the effects of the transconductance of the feedback such that the expressions become simpler very much comparable. They will be used throughout this paper. From these numbers, it is clear that only small input signal amplitudes can be applied to a bipolar transist. Also, a current swing of 0.5 already cresponds with a high disttion region, as shown in Fig. 5. F small values of, relations (21) (22) hold. On a double logarithmic scale, straight lines result with slopes of 1 2, respectively. Doubling thus quadruples the thirdder disttion. At higher values of, however, the values of the disttion are quite high but do not increase (see Fig. 5) any further. These values have been calculated by means of transient analyzes in SPICE, followed by Fourier analyses. IV. DISTORTION IN A MOSFET AMPLIFIER F a MOST, the analysis is very similar as f a bipolar transist. Only the transfer characteristic is quadratic not exponential. Less disttion is thus expected. The drain current gate source voltage of a MOST are in first-der related by (23) in which is the transconductance fact, which includes the size, is the threshold voltage. The transist is biased at a specific dc value of, i.e., in a quiescent operating point. A small variation of this voltage causes a small variation in drain current. They are related by Expression (23) thus becomes (24) (25)

6 320 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: ANALOG AND DIGITAL SIGNAL PROCESSING, VOL. 46, NO. 3, MARCH 1999 Subtraction of from both sides, division by the value of the quiescent current, yields (26) (27) in which are the peak values of the relative current swing the gate source input voltage, respectively. F small signals, only the first term in (27) has to be retained, which yields (28) as expected. Also, the peak relative current swing is related to the input drive by (29) Finally, identification of (27) with (1) shows that f, the coefficients are,,,. Use of definitions (5) (7) thus yields HD (30) (31) Note that no third-der disttion occurs. Indeed, the transfer characteristic [expression (23)] is only quadratic, hence no third-der terms can be generated. Hence, is zero infinite. Comparison of (30) with (21) shows that a MOST only generates half as much (second-der) disttion as a bipolar transist. The main advantage of a MOST, however, is that the input voltage is scaled to ( ), which can be made quite large, whereas f a bipolar transist, the input voltage is fixed scaled to mv. F example, if again a peak relative current swing is taken of 0.1 (f ma 100 A peak ac current), then %. Even me imptant, however, is that a peak input voltage is allowed of mv (35 mv ) f V, of 10 mv (7 mv ) only, f V. The smaller the aspect ratio is made, the larger the value the larger the peak input voltage can be allowed f the same disttion. The input voltage is indeed related to the disttion ( the relative current swing )as given by (32) Fig. 8. Generation of nonlinear disttion (compression), caused by a symmetrical differential stage. F a given amount of disttion ( ) dc current ( ), the maximum value of is inversely proptional to the square root of hence,. Finally note that no third-der disttion is generated as long as the first-der model of a MOST is guaranteed. As soon as the complete expression is taken of MOST, including the terms with 3/2 exponents, then third-der disttion does occur, but nevertheless in very limited amounts. V. DISTORTION IN A BOLAR TRANSISTOR DIFFERENTIAL AMPLIFIER Phase inversion of the input signal changes the sign of the fundamental third-der components but not of the secondder component. This is exploited in a balanced differential circuit, to which two input signals of equal amplitude but opposite phase are applied. The difference of the output signals does not contain even-der disttion at least if no unbalance is caused by mismatch. This is the case f a differential amplifier as discussed next. As shown by the transfer characteristic (see Fig. 8), the operating point occurs now at zero output input voltage. The transfer characteristic is indeed perfectly symmetrical with respect to the crosspoint of the axis. Application of a sinusoidal wavefm in causes a flattening of both tops of the quasi sinusoidal wavefm in. Compression thus occurs. The transfer characteristic has been derived in [1, Ch. 4]. The differential output current is twice the ac current in each transist. The relative current swing is thus given by (33) in which is the ac current circulating through both transists is the differential input voltage. If two load resists were added, then the output voltage would be. F small input voltages ( ), the tanh function can be exped in a power series. Indeed, f, we know that (34)

7 SANSEN: DISTORTION IN ELEMENTARY TRANSISTOR CIRCUITS 321 Application to (33) yields (35) in which represent peak values of the relative current swing the input voltage, respectively. Truncation of this power series after its first term is sufficient an approximation f small signals. It leads to the well-known result that (36) in which is the transconductance of both transists, both carrying current. In a first-der approximation, a simple relation is also obtained between the input voltage the relative current swing, as given by (37) Finally, identification of (35) with (1) shows that f, the coefficients are,,,. Use of (5) (10) of relation (37) yields as expected Also, HD (38a) HD (38b) (39) Coefficient is negative, hence, the disttion causes compression of the wavefm. F example, a total dc current ma is used again. Now, however, each bipolar transist only carries a dc current of 0.5 ma. The peak ac current in each transist is also reduced to 50 A. F k, the voltage gain also equals 200. The peak relative current swing is again. As a result, %. F this, a peak input voltage is obtained of 5.2 mv 3.7 mv. The disttion is thus 2 times lower than in the case of a single transist carrying a dc current providing the same gain. This fact of 2 is also found by comparison of (38) with (21). This conclusion is especially true because no second-der disttion is present. In practice, mismatch will generate some second-der disttion as well. It is usually much smaller than the third-der disttion. F a peak relative current swing of 0.5, % f which a signal amplitude of 8.4 mv is required. Again, a fact of 2 difference is found. It can be concluded that a differential stage can take 1.4 times me input voltage to generate the same third-der disttion as a single transist amplifier with the same total dc current. VI. DISTORTION IN A MOST DIFFERENTIAL AMPLIFIER The transfer characteristic of a differential pair with MOST is very similar to the one with bipolar transists; it is symmetrical around the igin. No second-der disttion can thus occur. Since a single MOST amplifier does not generate third-der disttion, it will be interesting to examine what disttion perfmance can be obtained with a MOST differential amplifier. The transfer characteristic has been derived in [1, Ch. 4]. The differential output current is again twice the ac current in each transist. The relative current swing is thus given by (40) in which is the differential input voltage. Note that can always be substituted by. F small values of, the square root can be exped as a power series. Indeed, f, we know that which allows us to wk out (40) into (41) (42) Again,,, all represent peak values. F a pure small signal analysis, the power series has to be limited to the first term only, which leads to (43) (44) in which is the gate source voltage, is the transconductance of either T1 T2, which both carry currents of. Expression (42) also provides a first-der relation between the input voltage the relative current swing (45) In der to obtain the disttion components, (42) has to be identified with (1). It shows that f, the coefficients are,,,. No second-der disttion thus occurs, as expected indeed, since no quadratic component occurs in (42). Also, coefficient is negative, which shows that compression disttion occurs, as expected as well, from a differential stage. Use of the definitions (5) (10) of relation (45) yields zero f HD (46a)

8 322 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: ANALOG AND DIGITAL SIGNAL PROCESSING, VOL. 46, NO. 3, MARCH 1999 in which represents the transfer function of the unilateral feedback netwk. The coefficients of the new power series can be found by application of (2) on (1) use of (48), which yields the following relations (49) (50) (51) Fig. 9. Application of negative feedback f converts power series coefficients a i into b i. (46b) F example, both transists carry a dc current of 0.5 ma a peak ac component of 50 A A, which yields. As a result %. This value is 1.6 times larger than the one f a bipolar differential stage with the same current swing. However, the input voltage allowed, again depends on the value of as given by (45), which can be rewritten as (47) in which applies to either transist T1 T2. The smaller ( ), the larger the input voltage allowed. F example, if V, then mv 14 mv. Finally, V. It can thus be concluded that a MOST differential stage does generate third-der disttion, because of the limiting action of its transfer characteristic. It even generates a somewhat me third-der disttion than a bipolar differential stage. The input voltage allowed is, however, much larger can be designed to, in principle, any value, depending on the value of. VII. THE EFFECT OF FEEDBACK ON DISTORTION Series base emitter resistances in the bipolar transist linearize the exponential relationship thus reduce the disttion. This cresponds, however, with a reduction in gain. Also, series source resistance in the MOST reduces the disttion the gain as well. In this section, it is examined how the application of negative feedback reduces the disttion. A. They The application of negative feedback around the nonlinear amplifier, which is characterized by coefficients (see Fig. 9) gives rise to a new power series of the same fm, but with coefficients. The feedback action is described by (48) in which the loop gain is given by (52) All expressions (5) (10) are used to obtain the disttion components are still valid, provided the coefficients are replaced by. The amplitude of the output signal itself is given by (49). It is reduced by a fact of as expected. F this reason, the input voltage (see Fig. 9) is reduced by as well. The second-der disttion is given by (53) Also, after replacement of by (54) The first term represents third-der disttion related to, which is present as well without feedback. It is positive thus represents expansion disttion. A sinusoidal wavefm becomes me triangular. The second term represents second-der interaction around the feedback loop, generating third-der disttion. It is negative thus cresponds with compression. The third-der disttion can cancel completely f specific values of. This causes a null in the characteristic, which is quite sharp difficult to maintain over a wide range of transist variables. Therefe, it is never a parameter to design f. Meover, it occurs at very small values of loop gain. F high values of, the second term usually dominates compression disttion results. F small values of of, expansion disttion is dominant. These effects are now illustrated with several examples. B. Emitter Resistance in Single Bipolar Transist Amplifier Insertion of an emitter resistance in a single transist amplifier provides local feedback. The loop gain is given by (55) The second-der disttion component is then obtained from (53) given by ( f a bipolar transist) (56)

9 SANSEN: DISTORTION IN ELEMENTARY TRANSISTOR CIRCUITS 323 which shows that the input voltage is to be compared with the voltage drop across the feedback resistance, in der to obtain. F instance, f a voltage drop across of 1 V ( k with ma), then V 0.07 V gives. F such high values of feedback ( ), the disttion components can be simplified to (61) (62) Fig. 10. Disttion components with feedback in a bipolar transist with 1 ma collect current. in which is the peak input voltage with respect to ground. Also since the result is (57) (58) The third-der disttion is derived from (54) given by ( ; ) (59) F example, a bipolar transist carries a dc current of 1 ma an ac peak current of 100 A. The peak relative current swing is thus 0.1. Without feedback %, %, mv. Addition of a resistance of 260 causes a dc voltage across of mv which results in. Note that the value of is easily found by taking the dc voltage across, divided by. The value of %. Meover, the input voltage allowed increases to 20.2 mv. The value of is then, 0.02%. In der to increase to the same value as without feedback, the value of has to be increased by 2.5, yielding mv. The disttion components with feedback are plotted versus ( ) in Fig. 10 f constant values of the collect current ( ma) relative current swing. F low feedback ( ), the values are the same as on Fig. 5 f. F large feedback ( ), the values decrease with a slope of unity. Note that the null in indeed occurs at, which cresponds with a very small amount of feedback indeed. F high values of feedback ( ), expression (57) of the relative current swing can be modified into (60) Comparison with (21) shows that f it is sufficient to divide by, whereas has to be divided by. It can thus be concluded that feedback reduces disttion components indeed. All of them are reduced, however, by about the same amount. Finally, note that emitter resistances can never fully be excluded in a bipolar transist since the base resistance linearizes the exponential as well. The equivalent emitter resistance is then, which is usually of the der of a few ohms. C. Source Resistance in Single MOST Amplifier The insertion of a source resist provides local feedback. The value of the loop gain is again given by (55) with an emitter resist instead of a source resist. From (27), we find. As a result, (53) (54) become (63) since now (64) (65) F the same current swing, the second-der disttion is reduced by. Now, however, third-der disttion emerges as well. It is caused by the presence of in (54), which represents the increase in der of the second-der disttion component which is fed back to the input. It is still smaller than f a bipolar transist. F large feedback, the current swing becomes (66) (67) which leads to the same conclusion as f a bipolar transist.

10 324 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: ANALOG AND DIGITAL SIGNAL PROCESSING, VOL. 46, NO. 3, MARCH 1999 D. Emitter Resistances in a Bipolar Differential Stage In a differential pair, second-der disttion is absent ( ). Addition of equal emitter resistances in both transists does not degrade this symmetry. The third-der disttion is derived from (54) is given by (f ) (68) The same conclusions can thus be drawn. is negative, which cresponds with compression disttion, as befe. F large feedback ( ), the value of decreases linearly with is then given by the disttion without feedback, divided by ( ). E. Source Resistances in a MOST Differential Stage Again, symmetry is maintained, hence no second-der disttion occurs. From (42) we find that. The third-der disttion is again derived from (54) is given by (69) The same conclusion can be drawn as f a differential stage with bipolar transists. F. Emitter Follower F disttion analysis, the emitter follower can be regarded as a single transist amplifier with large feedback ( ). The output is taken at the emitter instead of at the collect; but since the relative current swing is taken as a fundamental parameter, the analysis is the same. F an emitter follower with an emitter resistance, the disttion components are thus already given by (61) (62). However, if a transist is used instead of a resistance, then its output resistance has to be used in the expression instead of. Since, in which is the early voltage, the relative current swing can be derived from (60) is given by (70) In der to obtain, the input voltage thus simply has to be compared with the early voltage. F instance, f V( ma), an input voltage of V ( 0.07 V ) only provides. The disttion components are then given by (61) (62) which give ( ) % %. They are thus negligible, thanks to both the low values of the high value of. F an ideal follower, the current source is ideal, its current is not modified by application of an input signal. Hence, the current swing is zero so is the disttion (see Fig. 11). The disttion of a source follower can also be calculated directly as a solution of a nonlinear equation. Fig. 11. The current swing in an ideal source follower is zero, so is the disttion. G. Source Follower Very much the same conclusions apply to the source follower as to the emitter follower. The relative current swing is again given by (71) has to be used in (63) (67). As an example, a source follower is taken at ma with a current source with output resistance 16 k ( V). An input voltage of 4 V ( 2.8 V ) now gives. Now the aspect ratio is such that V. V. Thus, % %. Obviously f an ideal current source, the relative current swing is zero so is the disttion (see Fig. 11). In this consideration, the bulk is assumed to be connected to the source. If this is not the case, the parasitic JFET the body effect has to be considered as well. In this case, the disttion is mainly caused by this effect. To find the sources of disttion in any arbitrary circuit, the values of the relative current swing have to be found together with the feedback fact. All disttion components are readily calculated. In addition, the amplitude of the transfer characteristic versus frequency has to be calculated of each transist output to the output of the total circuit. Higher harmonics are usually attenuated by the low-pass filter action of the capacitances present. REFERENCES [1] K. Laker W. Sansen, Design of Analog Integrated Circuits Systems. New Yk: McGraw-Hill, [2] W. Sansen R. Meyer, Disttion in bipolar transist variable-gain amplifiers, IEEE J. Solid-State Circuits, vol. SC-8, pp , Aug [3] J. Silva-Martinez, M. Steyaert, W. Sansen, High-Perfmance CMOS Continuous-Time Filters. Nwell, MA: Kluwer Academic, [4] S. Willingham K. Martin, Integrated Video-Frequency Continuous- Time Filters. Nwell, MA: Kluwer, [5] D. Pederson K. Mayaram, Analog Integrated Circuits f Communications. Nwell, MA: Kluwer, [6] P. Wambacq W. Sansen, Disttion Analysis of Analog Integrated Circuits. Nwell, MA: Kluwer, 1998.

11 SANSEN: DISTORTION IN ELEMENTARY TRANSISTOR CIRCUITS 325 Willy Sansen (S 66 M 72 SM 86 F 95) received the M.Sc. degree in electrical engineering from the Katholieke Universiteit Leuven in 1967 the Ph.D. degree in electronics from the University of Califnia at Berkeley in Since 1981, he has been a Full Profess at the ESAT Labaty of the Katholieke Universiteit Leuven. He was a Visiting Profess at the Universities of Stanfd (1977), Lausanne (1981), Philadelphia (1985), Ulm (1994). He has been involved in design automation in numerous analogue integrated circuit designs f telecom, consumer, biomedical applications senss. He has been supervis of 340 papers in international journals conference proceedings six books, among which the textbook with K. Laker, Design of Analog Integrated Circuits Systems (McGraw- Hill, 1994).

Basic distortion definitions

Basic distortion definitions Conclusions The push-pull second-generation current-conveyor realised with a complementary bipolar integration technology is probably the most appropriate choice as a building block for low-distortion

More information

444 Index. F Fermi potential, 146 FGMOS transistor, 20 23, 57, 83, 84, 98, 205, 208, 213, 215, 216, 241, 242, 251, 280, 311, 318, 332, 354, 407

444 Index. F Fermi potential, 146 FGMOS transistor, 20 23, 57, 83, 84, 98, 205, 208, 213, 215, 216, 241, 242, 251, 280, 311, 318, 332, 354, 407 Index A Accuracy active resistor structures, 46, 323, 328, 329, 341, 344, 360 computational circuits, 171 differential amplifiers, 30, 31 exponential circuits, 285, 291, 292 multifunctional structures,

More information

THE rapid growth of portable wireless communication

THE rapid growth of portable wireless communication 1166 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 32, NO. 8, AUGUST 1997 A Class AB Monolithic Mixer for 900-MHz Applications Keng Leong Fong, Christopher Dennis Hull, and Robert G. Meyer, Fellow, IEEE Abstract

More information

Tuesday, March 22nd, 9:15 11:00

Tuesday, March 22nd, 9:15 11:00 Nonlinearity it and mismatch Tuesday, March 22nd, 9:15 11:00 Snorre Aunet (sa@ifi.uio.no) Nanoelectronics group Department of Informatics University of Oslo Last time and today, Tuesday 22nd of March:

More information

Michael F. Toner, et. al.. "Distortion Measurement." Copyright 2000 CRC Press LLC. <

Michael F. Toner, et. al.. Distortion Measurement. Copyright 2000 CRC Press LLC. < Michael F. Toner, et. al.. "Distortion Measurement." Copyright CRC Press LLC. . Distortion Measurement Michael F. Toner Nortel Networks Gordon W. Roberts McGill University 53.1

More information

ISSCC 2001 / SESSION 23 / ANALOG TECHNIQUES / 23.2

ISSCC 2001 / SESSION 23 / ANALOG TECHNIQUES / 23.2 ISSCC 2001 / SESSION 23 / ANALOG TECHNIQUES / 23.2 23.2 Dynamically Biased 1MHz Low-pass Filter with 61dB Peak SNR and 112dB Input Range Nagendra Krishnapura, Yannis Tsividis Columbia University, New York,

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-3 MOSFET UNDER

More information

ECEN 474/704 Lab 6: Differential Pairs

ECEN 474/704 Lab 6: Differential Pairs ECEN 474/704 Lab 6: Differential Pairs Objective Design, simulate and layout various differential pairs used in different types of differential amplifiers such as operational transconductance amplifiers

More information

EE301 Electronics I , Fall

EE301 Electronics I , Fall EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials

More information

55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.

55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point. Exam 3 Name: Score /65 Question 1 Unless stated otherwise, each question below is 1 point. 1. An engineer designs a class-ab amplifier to deliver 2 W (sinusoidal) signal power to an resistive load. Ignoring

More information

Designing CMOS folded-cascode operational amplifier with flicker noise minimisation

Designing CMOS folded-cascode operational amplifier with flicker noise minimisation Microelectronics Journal 32 (200) 69 73 Short Communication Designing CMOS folded-cascode operational amplifier with flicker noise minimisation P.K. Chan*, L.S. Ng, L. Siek, K.T. Lau Microelectronics Journal

More information

Operational Amplifiers

Operational Amplifiers Operational Amplifiers Table of contents 1. Design 1.1. The Differential Amplifier 1.2. Level Shifter 1.3. Power Amplifier 2. Characteristics 3. The Opamp without NFB 4. Linear Amplifiers 4.1. The Non-Inverting

More information

THE increased complexity of analog and mixed-signal IC s

THE increased complexity of analog and mixed-signal IC s 134 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 34, NO. 2, FEBRUARY 1999 An Integrated Low-Voltage Class AB CMOS OTA Ramesh Harjani, Member, IEEE, Randy Heineke, Member, IEEE, and Feng Wang, Member, IEEE

More information

Chapter 8. Field Effect Transistor

Chapter 8. Field Effect Transistor Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There

More information

Index. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10

Index. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10 Index A absolute value, 308 additional pole, 271 analog multiplier, 190 B BiCMOS,107 Bode plot, 266 base-emitter voltage, 16, 50 base-emitter voltages, 296 bias current, 111, 124, 133, 137, 166, 185 bipolar

More information

THE TREND toward implementing systems with low

THE TREND toward implementing systems with low 724 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 30, NO. 7, JULY 1995 Design of a 100-MHz 10-mW 3-V Sample-and-Hold Amplifier in Digital Bipolar Technology Behzad Razavi, Member, IEEE Abstract This paper

More information

2005 IEEE. Reprinted with permission.

2005 IEEE. Reprinted with permission. P. Sivonen, A. Vilander, and A. Pärssinen, Cancellation of second-order intermodulation distortion and enhancement of IIP2 in common-source and commonemitter RF transconductors, IEEE Transactions on Circuits

More information

Improved Linearity CMOS Multifunctional Structure for VLSI Applications

Improved Linearity CMOS Multifunctional Structure for VLSI Applications ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY Volume 10, Number 2, 2007, 157 165 Improved Linearity CMOS Multifunctional Structure for VLSI Applications C. POPA Faculty of Electronics, Telecommunications

More information

DESIGN OF MULTI-BIT DELTA-SIGMA A/D CONVERTERS

DESIGN OF MULTI-BIT DELTA-SIGMA A/D CONVERTERS DESIGN OF MULTI-BIT DELTA-SIGMA A/D CONVERTERS DESIGN OF MULTI-BIT DELTA-SIGMA A/D CONVERTERS by Yves Geerts Alcatel Microelectronics, Belgium Michiel Steyaert KU Leuven, Belgium and Willy Sansen KU Leuven,

More information

Design and Analysis of a Continuous-Time Common-Mode Feedback Circuit Based on Differential-Difference Amplifier

Design and Analysis of a Continuous-Time Common-Mode Feedback Circuit Based on Differential-Difference Amplifier Research Journal of Applied Sciences, Engineering and Technology 4(5): 45-457, 01 ISSN: 040-7467 Maxwell Scientific Organization, 01 Submitted: September 9, 011 Accepted: November 04, 011 Published: March

More information

UNIT 4 BIASING AND STABILIZATION

UNIT 4 BIASING AND STABILIZATION UNIT 4 BIASING AND STABILIZATION TRANSISTOR BIASING: To operate the transistor in the desired region, we have to apply external dec voltages of correct polarity and magnitude to the two junctions of the

More information

Ultra-Low-Voltage Floating-Gate Transconductance Amplifiers

Ultra-Low-Voltage Floating-Gate Transconductance Amplifiers IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: ANALOG AND DIGITAL SIGNAL PROCESSING, VOL. 48, NO. 1, JANUARY 2001 37 Ultra-Low-Voltage Floating-Gate Transconductance Amplifiers Yngvar Berg, Tor S. Lande,

More information

Homework Assignment 06

Homework Assignment 06 Homework Assignment 06 Question 1 (Short Takes) One point each unless otherwise indicated. 1. Consider the current mirror below, and neglect base currents. What is? Answer: 2. In the current mirrors below,

More information

A Compact 2.4V Power-efficient Rail-to-rail Operational Amplifier. Strong inversion operation stops a proposed compact 3V power-efficient

A Compact 2.4V Power-efficient Rail-to-rail Operational Amplifier. Strong inversion operation stops a proposed compact 3V power-efficient A Compact 2.4V Power-efficient Rail-to-rail Operational Amplifier Abstract Strong inversion operation stops a proposed compact 3V power-efficient rail-to-rail Op-Amp from a lower total supply voltage.

More information

Atypical op amp consists of a differential input stage,

Atypical op amp consists of a differential input stage, IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 33, NO. 6, JUNE 1998 915 Low-Voltage Class Buffers with Quiescent Current Control Fan You, S. H. K. Embabi, and Edgar Sánchez-Sinencio Abstract This paper presents

More information

Gechstudentszone.wordpress.com

Gechstudentszone.wordpress.com UNIT 4: Small Signal Analysis of Amplifiers 4.1 Basic FET Amplifiers In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits

More information

ALTHOUGH zero-if and low-if architectures have been

ALTHOUGH zero-if and low-if architectures have been IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 40, NO. 6, JUNE 2005 1249 A 110-MHz 84-dB CMOS Programmable Gain Amplifier With Integrated RSSI Function Chun-Pang Wu and Hen-Wai Tsao Abstract This paper describes

More information

CDTE and CdZnTe detector arrays have been recently

CDTE and CdZnTe detector arrays have been recently 20 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 44, NO. 1, FEBRUARY 1997 CMOS Low-Noise Switched Charge Sensitive Preamplifier for CdTe and CdZnTe X-Ray Detectors Claudio G. Jakobson and Yael Nemirovsky

More information

Lecture 7: Distortion Analysis

Lecture 7: Distortion Analysis EECS 142 Lecture 7: Distortion Analysis Prof. Ali M. Niknejad University of California, Berkeley Copyright c 2005 by Ali M. Niknejad A. M. Niknejad University of California, Berkeley EECS 142 Lecture 7

More information

AN increasing number of video and communication applications

AN increasing number of video and communication applications 1470 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 32, NO. 9, SEPTEMBER 1997 A Low-Power, High-Speed, Current-Feedback Op-Amp with a Novel Class AB High Current Output Stage Jim Bales Abstract A complementary

More information

TWO AND ONE STAGES OTA

TWO AND ONE STAGES OTA TWO AND ONE STAGES OTA F. Maloberti Department of Electronics Integrated Microsystem Group University of Pavia, 7100 Pavia, Italy franco@ele.unipv.it tel. +39-38-50505; fax. +39-038-505677 474 EE Department

More information

UNIT 2. Q.1) Describe the functioning of standard signal generator. Ans. Electronic Measurements & Instrumentation

UNIT 2. Q.1) Describe the functioning of standard signal generator. Ans.   Electronic Measurements & Instrumentation UNIT 2 Q.1) Describe the functioning of standard signal generator Ans. STANDARD SIGNAL GENERATOR A standard signal generator produces known and controllable voltages. It is used as power source for the

More information

The steeper the phase shift as a function of frequency φ(ω) the more stable the frequency of oscillation

The steeper the phase shift as a function of frequency φ(ω) the more stable the frequency of oscillation It should be noted that the frequency of oscillation ω o is determined by the phase characteristics of the feedback loop. the loop oscillates at the frequency for which the phase is zero The steeper the

More information

Lecture 17 - Microwave Mixers

Lecture 17 - Microwave Mixers Lecture 17 - Microwave Mixers Microwave Active Circuit Analysis and Design Clive Poole and Izzat Darwazeh Academic Press Inc. Poole-Darwazeh 2015 Lecture 17 - Microwave Mixers Slide1 of 42 Intended Learning

More information

Single-Ended to Differential Converter for Multiple-Stage Single-Ended Ring Oscillators

Single-Ended to Differential Converter for Multiple-Stage Single-Ended Ring Oscillators IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 38, NO. 1, JANUARY 2003 141 Single-Ended to Differential Converter for Multiple-Stage Single-Ended Ring Oscillators Yuping Toh, Member, IEEE, and John A. McNeill,

More information

Chapter 4. CMOS Cascode Amplifiers. 4.1 Introduction. 4.2 CMOS Cascode Amplifiers

Chapter 4. CMOS Cascode Amplifiers. 4.1 Introduction. 4.2 CMOS Cascode Amplifiers Chapter 4 CMOS Cascode Amplifiers 4.1 Introduction A single stage CMOS amplifier cannot give desired dc voltage gain, output resistance and transconductance. The voltage gain can be made to attain higher

More information

EECS 242: Analysis of Memoryless Weakly Non-Lineary Systems

EECS 242: Analysis of Memoryless Weakly Non-Lineary Systems EECS 242: Analysis of Memoryless Weakly Non-Lineary Systems Review of Linear Systems Linear: Linear Complete description of a general time-varying linear system. Note output cannot have a DC offset! Time-invariant

More information

Phy 335, Unit 4 Transistors and transistor circuits (part one)

Phy 335, Unit 4 Transistors and transistor circuits (part one) Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit

More information

Chapter 5. Operational Amplifiers and Source Followers. 5.1 Operational Amplifier

Chapter 5. Operational Amplifiers and Source Followers. 5.1 Operational Amplifier Chapter 5 Operational Amplifiers and Source Followers 5.1 Operational Amplifier In single ended operation the output is measured with respect to a fixed potential, usually ground, whereas in double-ended

More information

COMMON-MODE rejection ratio (CMRR) is one of the

COMMON-MODE rejection ratio (CMRR) is one of the IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS, VOL. 52, NO. 1, JANUARY 2005 49 On the Measurement of Common-Mode Rejection Ratio Jian Zhou, Member, IEEE, and Jin Liu, Member, IEEE Abstract

More information

FOR applications such as implantable cardiac pacemakers,

FOR applications such as implantable cardiac pacemakers, 1576 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 32, NO. 10, OCTOBER 1997 Low-Power MOS Integrated Filter with Transconductors with Spoilt Current Sources M. van de Gevel, J. C. Kuenen, J. Davidse, and

More information

Application Note 106 IP2 Measurements of Wideband Amplifiers v1.0

Application Note 106 IP2 Measurements of Wideband Amplifiers v1.0 Application Note 06 v.0 Description Application Note 06 describes the theory and method used by to characterize the second order intercept point (IP 2 ) of its wideband amplifiers. offers a large selection

More information

Due to the absence of internal nodes, inverter-based Gm-C filters [1,2] allow achieving bandwidths beyond what is possible

Due to the absence of internal nodes, inverter-based Gm-C filters [1,2] allow achieving bandwidths beyond what is possible A Forward-Body-Bias Tuned 450MHz Gm-C 3 rd -Order Low-Pass Filter in 28nm UTBB FD-SOI with >1dBVp IIP3 over a 0.7-to-1V Supply Joeri Lechevallier 1,2, Remko Struiksma 1, Hani Sherry 2, Andreia Cathelin

More information

I1 19u 5V R11 1MEG IDC Q7 Q2N3904 Q2N3904. Figure 3.1 A scaled down 741 op amp used in this lab

I1 19u 5V R11 1MEG IDC Q7 Q2N3904 Q2N3904. Figure 3.1 A scaled down 741 op amp used in this lab Lab 3: 74 Op amp Purpose: The purpose of this laboratory is to become familiar with a two stage operational amplifier (op amp). Students will analyze the circuit manually and compare the results with SPICE.

More information

Differential Amplifiers/Demo

Differential Amplifiers/Demo Differential Amplifiers/Demo Motivation and Introduction The differential amplifier is among the most important circuit inventions, dating back to the vacuum tube era. Offering many useful properties,

More information

Inter-Ing INTERDISCIPLINARITY IN ENGINEERING SCIENTIFIC INTERNATIONAL CONFERENCE, TG. MUREŞ ROMÂNIA, November 2007.

Inter-Ing INTERDISCIPLINARITY IN ENGINEERING SCIENTIFIC INTERNATIONAL CONFERENCE, TG. MUREŞ ROMÂNIA, November 2007. Inter-Ing 2007 INTERDISCIPLINARITY IN ENGINEERING SCIENTIFIC INTERNATIONAL CONFERENCE, TG. MUREŞ ROMÂNIA, 15-16 November 2007. A FULLY BALANCED, CCII-BASED TRANSCONDUCTANCE AMPLIFIER AND ITS APPLICATION

More information

IT has been extensively pointed out that with shrinking

IT has been extensively pointed out that with shrinking IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 18, NO. 5, MAY 1999 557 A Modeling Technique for CMOS Gates Alexander Chatzigeorgiou, Student Member, IEEE, Spiridon

More information

I. INTRODUCTION II. PROPOSED FC AMPLIFIER

I. INTRODUCTION II. PROPOSED FC AMPLIFIER IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 44, NO. 9, SEPTEMBER 2009 2535 The Recycling Folded Cascode: A General Enhancement of the Folded Cascode Amplifier Rida S. Assaad, Student Member, IEEE, and Jose

More information

Transconductance Amplifier Structures With Very Small Transconductances: A Comparative Design Approach

Transconductance Amplifier Structures With Very Small Transconductances: A Comparative Design Approach 770 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 37, NO. 6, JUNE 2002 Transconductance Amplifier Structures With Very Small Transconductances: A Comparative Design Approach Anand Veeravalli, Student Member,

More information

Linear voltage to current conversion using submicron CMOS devices

Linear voltage to current conversion using submicron CMOS devices Brigham Young University BYU ScholarsArchive All Faculty Publications 2004-05-04 Linear voltage to current conversion using submicron CMOS devices David J. Comer comer.ee@byu.edu Donald Comer See next

More information

Voltage Feedback Op Amp (VF-OpAmp)

Voltage Feedback Op Amp (VF-OpAmp) Data Sheet Voltage Feedback Op Amp (VF-OpAmp) Features 55 db dc gain 30 ma current drive Less than 1 V head/floor room 300 V/µs slew rate Capacitive load stable 40 kω input impedance 300 MHz unity gain

More information

INTRODUCTION TO ELECTRONICS EHB 222E

INTRODUCTION TO ELECTRONICS EHB 222E INTRODUCTION TO ELECTRONICS EHB 222E MOS Field Effect Transistors (MOSFETS II) MOSFETS 1/ INTRODUCTION TO ELECTRONICS 1 MOSFETS Amplifiers Cut off when v GS < V t v DS decreases starting point A, once

More information

ANALOG INTEGRATED CIRCUITS FOR COMMUNICATION Principles, Simulation and Design

ANALOG INTEGRATED CIRCUITS FOR COMMUNICATION Principles, Simulation and Design ANALOG INTEGRATED CIRCUITS FOR COMMUNICATION Principles, Simulation and Design ANALOG INTEGRATED CIRCUITS FOR COMMUNICATION Principles, Simulation and Design by Donald 0. Pederson University of California

More information

Diodes CHAPTER Rectifier Circuits. Introduction. 4.6 Limiting and Clamping Circuits. 4.2 Terminal Characteristics of Junction Diodes 173

Diodes CHAPTER Rectifier Circuits. Introduction. 4.6 Limiting and Clamping Circuits. 4.2 Terminal Characteristics of Junction Diodes 173 CHAPTER 4 Diodes Introduction 4.1 4.5 Rectifier Circuits 165 The Ideal Diode 166 4.2 Terminal Characteristics of Junction Diodes 173 4.3 Modeling the Diode Forward Characteristic 179 4.4 Operation in the

More information

CHAPTER 6 INTRODUCTION TO SYSTEM IDENTIFICATION

CHAPTER 6 INTRODUCTION TO SYSTEM IDENTIFICATION CHAPTER 6 INTRODUCTION TO SYSTEM IDENTIFICATION Broadly speaking, system identification is the art and science of using measurements obtained from a system to characterize the system. The characterization

More information

Full Paper ACEEE Int. J. on Control System and Instrumentation, Vol. 4, No. 2, June 2013

Full Paper ACEEE Int. J. on Control System and Instrumentation, Vol. 4, No. 2, June 2013 ACEEE Int J on Control System and Instrumentation, Vol 4, No 2, June 2013 Analys and Design of CMOS Source Followers and Super Source Follower Mr D K Shedge 1, Mr D A Itole 2, Mr M P Gajare 3, and Dr P

More information

Cascomp BJT Amplifier vs. Traditional Configurations

Cascomp BJT Amplifier vs. Traditional Configurations Cascomp BJT Amplifier vs. Traditional Configurations Harrisson Jull, Toby Balsom, and Jonathan Scott University of Waikato School of Science and Engineering harrisson.j@hotmail.co.nz Abstract: Keywords:

More information

Lecture 300 Low Voltage Op Amps (3/28/10) Page 300-1

Lecture 300 Low Voltage Op Amps (3/28/10) Page 300-1 Lecture 300 Low Voltage Op Amps (3/28/10) Page 300-1 LECTURE 300 LOW VOLTAGE OP AMPS LECTURE ORGANIZATION Outline Introduction Low voltage input stages Low voltage gain stages Low voltage bias circuits

More information

Oscillators. An oscillator may be described as a source of alternating voltage. It is different than amplifier.

Oscillators. An oscillator may be described as a source of alternating voltage. It is different than amplifier. Oscillators An oscillator may be described as a source of alternating voltage. It is different than amplifier. An amplifier delivers an output signal whose waveform corresponds to the input signal but

More information

Applied Electronics II

Applied Electronics II Applied Electronics II Chapter 2: Differential Amplifier School of Electrical and Computer Engineering Addis Ababa Institute of Technology Addis Ababa University Daniel D./Abel G. April 4, 2016 Chapter

More information

PROJECT ON MIXED SIGNAL VLSI

PROJECT ON MIXED SIGNAL VLSI PROJECT ON MXED SGNAL VLS Submitted by Vipul Patel TOPC: A GLBERT CELL MXER N CMOS AND BJT TECHNOLOGY 1 A Gilbert Cell Mixer in CMOS and BJT technology Vipul Patel Abstract This paper describes a doubly

More information

ANALOG active filters, shown in a general form in

ANALOG active filters, shown in a general form in 1912 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 12, DECEMBER 2001 Noise and Power Reduction in Filters Through the Use of Adjustable Biasing Nagendra Krishnapura and Yannis P. Tsividis, Fellow,

More information

Highly linear common-gate mixer employing intrinsic second and third order distortion cancellation

Highly linear common-gate mixer employing intrinsic second and third order distortion cancellation Highly linear common-gate mixer employing intrinsic second and third order distortion cancellation Mahdi Parvizi a), and Abdolreza Nabavi b) Microelectronics Laboratory, Tarbiat Modares University, Tehran

More information

Outline. Noise and Distortion. Noise basics Component and system noise Distortion INF4420. Jørgen Andreas Michaelsen Spring / 45 2 / 45

Outline. Noise and Distortion. Noise basics Component and system noise Distortion INF4420. Jørgen Andreas Michaelsen Spring / 45 2 / 45 INF440 Noise and Distortion Jørgen Andreas Michaelsen Spring 013 1 / 45 Outline Noise basics Component and system noise Distortion Spring 013 Noise and distortion / 45 Introduction We have already considered

More information

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS AV18-AFC ANALOG FUNDAMENTALS C Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS 1 ANALOG FUNDAMENTALS C AV18-AFC Overview This topic identifies the basic FET amplifier configurations and their principles of

More information

NEW WIRELESS applications are emerging where

NEW WIRELESS applications are emerging where IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 39, NO. 4, APRIL 2004 709 A Multiply-by-3 Coupled-Ring Oscillator for Low-Power Frequency Synthesis Shwetabh Verma, Member, IEEE, Junfeng Xu, and Thomas H. Lee,

More information

Piecewise Linear Circuits

Piecewise Linear Circuits Kenneth A. Kuhn March 24, 2004 Introduction Piecewise linear circuits are used to approximate non-linear functions such as sine, square-root, logarithmic, exponential, etc. The quality of the approximation

More information

ECE 340 Lecture 40 : MOSFET I

ECE 340 Lecture 40 : MOSFET I ECE 340 Lecture 40 : MOSFET I Class Outline: MOS Capacitance-Voltage Analysis MOSFET - Output Characteristics MOSFET - Transfer Characteristics Things you should know when you leave Key Questions How do

More information

A 100MHz CMOS wideband IF amplifier

A 100MHz CMOS wideband IF amplifier A 100MHz CMOS wideband IF amplifier Sjöland, Henrik; Mattisson, Sven Published in: IEEE Journal of Solid-State Circuits DOI: 10.1109/4.663569 1998 Link to publication Citation for published version (APA):

More information

A Novel Continuous-Time Common-Mode Feedback for Low-Voltage Switched-OPAMP

A Novel Continuous-Time Common-Mode Feedback for Low-Voltage Switched-OPAMP 10.4 A Novel Continuous-Time Common-Mode Feedback for Low-oltage Switched-OPAMP M. Ali-Bakhshian Electrical Engineering Dept. Sharif University of Tech. Azadi Ave., Tehran, IRAN alibakhshian@ee.sharif.edu

More information

Experiment #6 MOSFET Dynamic circuits

Experiment #6 MOSFET Dynamic circuits Experiment #6 MOSFET Dynamic circuits Jonathan Roderick Introduction: This experiment will build upon the concepts that were presented in the previous lab and introduce dynamic circuits using MOSFETS.

More information

TO LIMIT degradation in power quality caused by nonlinear

TO LIMIT degradation in power quality caused by nonlinear 1152 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 13, NO. 6, NOVEMBER 1998 Optimal Current Programming in Three-Phase High-Power-Factor Rectifier Based on Two Boost Converters Predrag Pejović, Member,

More information

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,

More information

Chapter VII. MIXERS and DETECTORS

Chapter VII. MIXERS and DETECTORS Class Notes, 31415 RF-Communication Circuits Chapter VII MIXERS and DETECTORS Jens Vidkjær NB235 ii Contents VII Mixers and Detectors... 1 VII-1 Mixer Basics... 2 A Prototype FET Mixer... 2 Example VII-1-1

More information

Linearity Improvement Techniques for Wireless Transmitters: Part 1

Linearity Improvement Techniques for Wireless Transmitters: Part 1 From May 009 High Frequency Electronics Copyright 009 Summit Technical Media, LLC Linearity Improvement Techniques for Wireless Transmitters: art 1 By Andrei Grebennikov Bell Labs Ireland In modern telecommunication

More information

Output Stages and Power Amplifiers

Output Stages and Power Amplifiers CHAPTER 11 Output Stages and Power Amplifiers Introduction 11.7 Power BJTs 911 11.1 Classification of Output Stages 11. Class A Output Stage 913 11.3 Class B Output Stage 918 11.4 Class AB Output Stage

More information

Physics 364, Fall 2012, reading due your answers to by 11pm on Thursday

Physics 364, Fall 2012, reading due your answers to by 11pm on Thursday Physics 364, Fall 2012, reading due 2012-10-25. Email your answers to ashmansk@hep.upenn.edu by 11pm on Thursday Course materials and schedule are at http://positron.hep.upenn.edu/p364 Assignment: (a)

More information

Characterization of IIP2 and DC-Offsets in Transconductance Mixers

Characterization of IIP2 and DC-Offsets in Transconductance Mixers 1028 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: ANALOG AND DIGITAL SIGNAL PROCESSING, VOL. 48, NO. 11, NOVEMBER 2001 Characterization of IIP2 and DC-Offsets in Transconductance Mixers Kalle Kivekäs,

More information

An Improved Recycling Folded Cascode OTA with positive feedback

An Improved Recycling Folded Cascode OTA with positive feedback An Improved Recycling Folded Cascode OTA with positive feedback S.KUMARAVEL, B.VENKATARAMANI Department of Electronics and Communication Engineering National Institute of Technology Trichy Tiruchirappalli

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-8 Junction Field

More information

Sample and Hold (S/H)

Sample and Hold (S/H) Prof. Tai-Haur Kuo, EE, NCKU, Tainan City, Taiwan 8- 郭泰豪, Analog C Design, 07 Sample and Hold (S/H) Sample and Hold (often referred to as Track and hold (T/H)) dentical in both function & circuit implementation

More information

Department of Electrical Engineering and Computer Sciences, University of California

Department of Electrical Engineering and Computer Sciences, University of California Chapter 8 NOISE, GAIN AND BANDWIDTH IN ANALOG DESIGN Robert G. Meyer Department of Electrical Engineering and Computer Sciences, University of California Trade-offs between noise, gain and bandwidth are

More information

E84 Lab 3: Transistor

E84 Lab 3: Transistor E84 Lab 3: Transistor Cherie Ho and Siyi Hu April 18, 2016 Transistor Testing 1. Take screenshots of both the input and output characteristic plots observed on the semiconductor curve tracer with the following

More information

Integral function method for determination of nonlinear harmonic distortion

Integral function method for determination of nonlinear harmonic distortion Solid-State Electronics 48 (24) 2225 2234 www.elsevier.com/locate/sse Integral function method for determination of nonlinear harmonic distortion Antonio Cerdeira a, *, Miguel A. Alemán a, Magali Estrada

More information

Nonlinear Macromodeling of Amplifiers and Applications to Filter Design.

Nonlinear Macromodeling of Amplifiers and Applications to Filter Design. ECEN 622(ESS) Nonlinear Macromodeling of Amplifiers and Applications to Filter Design. By Edgar Sanchez-Sinencio Thanks to Heng Zhang for part of the material OP AMP MACROMODELS Systems containing a significant

More information

INTEGRATED CIRCUITS. SA571 Compandor. Product specification 1997 Aug 14 IC17 Data Handbook

INTEGRATED CIRCUITS. SA571 Compandor. Product specification 1997 Aug 14 IC17 Data Handbook INTEGRATED CIRCUITS 1997 Aug 14 IC17 Data Handbook DESCRIPTION The is a versatile low cost dual gain control circuit in which either channel may be used as a dynamic range compressor or expandor. Each

More information

Intermodulation Distortion in Current-Commutating CMOS Mixers

Intermodulation Distortion in Current-Commutating CMOS Mixers IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 35, NO. 10, OCTOBER 2000 1461 Intermodulation Distortion in Current-Commutating CMOS Mixers Manolis T. Terrovitis, Student Member, IEEE, and Robert G. Meyer,

More information

Experiment 9- Single Stage Amplifiers with Passive Loads - MOS

Experiment 9- Single Stage Amplifiers with Passive Loads - MOS Experiment 9- Single Stage Amplifiers with Passive oads - MOS D. Yee,.T. Yeung, M. Yang, S.M. Mehta, and R.T. Howe UC Berkeley EE 105 1.0 Objective This is the second part of the single stage amplifier

More information

Nonlinear Macromodeling of Amplifiers and Applications to Filter Design.

Nonlinear Macromodeling of Amplifiers and Applications to Filter Design. ECEN 622 Nonlinear Macromodeling of Amplifiers and Applications to Filter Design. By Edgar Sanchez-Sinencio Thanks to Heng Zhang for part of the material OP AMP MACROMODELS Systems containing a significant

More information

Charge-Based Continuous Equations for the Transconductance and Output Conductance of Graded-Channel SOI MOSFET s

Charge-Based Continuous Equations for the Transconductance and Output Conductance of Graded-Channel SOI MOSFET s Charge-Based Continuous Equations for the Transconductance and Output Conductance of Graded-Channel SOI MOSFET s Michelly de Souza 1 and Marcelo Antonio Pavanello 1,2 1 Laboratório de Sistemas Integráveis,

More information

(Refer Slide Time: 02:05)

(Refer Slide Time: 02:05) Electronics for Analog Signal Processing - I Prof. K. Radhakrishna Rao Department of Electrical Engineering Indian Institute of Technology Madras Lecture 27 Construction of a MOSFET (Refer Slide Time:

More information

Experiment 8 Frequency Response

Experiment 8 Frequency Response Experiment 8 Frequency Response W.T. Yeung, R.A. Cortina, and R.T. Howe UC Berkeley EE 105 Spring 2005 1.0 Objective This lab will introduce the student to frequency response of circuits. The student will

More information

Analysis of 1=f Noise in CMOS Preamplifier With CDS Circuit

Analysis of 1=f Noise in CMOS Preamplifier With CDS Circuit IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 49, NO. 4, AUGUST 2002 1819 Analysis of 1=f Noise in CMOS Preamplifier With CDS Circuit Tae-Hoon Lee, Gyuseong Cho, Hee Joon Kim, Seung Wook Lee, Wanno Lee, and

More information

RF, Microwave & Wireless. All rights reserved

RF, Microwave & Wireless. All rights reserved RF, Microwave & Wireless All rights reserved 1 Non-Linearity Phenomenon All rights reserved 2 Physical causes of nonlinearity Operation under finite power-supply voltages Essential non-linear characteristics

More information

A new class AB folded-cascode operational amplifier

A new class AB folded-cascode operational amplifier A new class AB folded-cascode operational amplifier Mohammad Yavari a) Integrated Circuits Design Laboratory, Department of Electrical Engineering, Amirkabir University of Technology, Tehran, Iran a) myavari@aut.ac.ir

More information

TLCE - A3 08/09/ /09/ TLCE - A DDC. IF channel Zc. - Low noise, wide dynamic Ie Vo 08/09/ TLCE - A DDC

TLCE - A3 08/09/ /09/ TLCE - A DDC. IF channel Zc. - Low noise, wide dynamic Ie Vo 08/09/ TLCE - A DDC Politecnico di Torino ICT School Telecommunication Electronics A3 Amplifiers nonlinearity» Reference circuit» Nonlinear models» Effects of nonlinearity» Applications of nonlinearity Large signal amplifiers

More information

CHARACTERIZATION and modeling of large-signal

CHARACTERIZATION and modeling of large-signal IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, VOL. 53, NO. 2, APRIL 2004 341 A Nonlinear Dynamic Model for Performance Analysis of Large-Signal Amplifiers in Communication Systems Domenico Mirri,

More information

IN RECENT years, low-dropout linear regulators (LDOs) are

IN RECENT years, low-dropout linear regulators (LDOs) are IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS, VOL. 52, NO. 9, SEPTEMBER 2005 563 Design of Low-Power Analog Drivers Based on Slew-Rate Enhancement Circuits for CMOS Low-Dropout Regulators

More information

A New Model for Thermal Channel Noise of Deep-Submicron MOSFETS and its Application in RF-CMOS Design

A New Model for Thermal Channel Noise of Deep-Submicron MOSFETS and its Application in RF-CMOS Design IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 5, MAY 2001 831 A New Model for Thermal Channel Noise of Deep-Submicron MOSFETS and its Application in RF-CMOS Design Gerhard Knoblinger, Member, IEEE,

More information