FDFS6N303 N-Channel MOSFET with Schottky Diode

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October 23 FFS6N33 N-hannel MOSFET with Schottky iode General escription Features The FFS6N33 incorporates a high cell density MOSFET and low forward drop (.

The general purpose pinout has been chosen to maximize flexibility and ease of use.

1 October 23 FFS6N33 N-hannel MOSFET with Schottky iode General escription Features The FFS6N33 incorporates a high cell density MOSFET and low forward drop (.35V) Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. This product is particularly suited for switching applications such as / buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PB footprint is desirable. 6, 3 V. R S(ON) =.35 V GS = V. R S(ON) =.55 V GS = 4.5 V. <.28 <.42 3 <.5 6. Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pinout for design flexibility. Ideal for / converter applications. SOT-23 SuperSOT TM -6 SuperSOT TM -8 SO-8 SOT-223 SOI-6 SO-8 FFS 6N33 pin S G S 3 6 G 4 5 MOSFET Maximum Ratings T = 25 o unless otherwise noted Symbol Parameter FFS6N33 Units V SS rain-source Voltage 3 V V GSS Gate-Source Voltage ±2 V I rain urrent - ontinuous (Note a) 6 - Pulsed 3 P Power issipation for ual Operation 2 W Power issipation for Single Operation (Note a).6 (Note c).9 T J,T STG Operating and Storage Temperature Range -55 to 5 Schottky iode Maximum Ratings T = 25 o unless otherwise noted V RRM Repetitive Peak Reverse Voltage 3 V I O verage Forward urrent (Note a) 2 23 Fairchild Semiconductor orporation FFS6N33 Rev. 3

2 Electrical haracteristics (T = 25 o unless otherwise noted ) MOSFET ELETRIL HRTERISTIS Symbol Parameter onditions Min Typ Max Units BV SS rain-source Breakdown Voltage V GS = V, I = 25 µ 3 V I SS Zero Gate Voltage rain urrent V S = 24 V, V GS = V µ T J = 2 µ I GSSF Gate - Body Leakage, Forward V GS = 2 V, V S = V n I GSSR Gate - Body Leakage, Reverse V GS = -2 V, V S = V - n V GS(th) Gate Threshold Voltage V S = V GS, I = 25 µ.7 3 V R S(ON) Static rain-source On-Resistance V GS = V, I = Ω V GS = 4.5 V, I = g FS Forward Transconductance V S = V, I = 6 2 S I (ON) On-State rain urrent V GS = V, V S = 5 V 5 iss Input apacitance V S = 5 V, V GS = V, 35 pf oss Output apacitance f =. MHz 22 pf rss Reverse Transfer apacitance 8 pf Q g Total Gate harge V S = 5 V, I = 6, V GS = V 2 7 n t (on) Turn - On elay Time V = V, I =, ns t r Turn - On Rise Time V GS = 4.5 V, R GEN = 6 Ω 2 25 ns t (off) Turn - Off elay Time 3 25 ns t f Turn - Off Fall Time 6 5 ns MOSFET RIN-SOURE IOE HRTERISTIS N MXIMUM RTINGS I S Maximum ontinuous rain-source iode Forward urrent.3 V S rain-source iode Forward Voltage V GS = V, I S =.3 (Note 2).8.2 V SHOTTKY IOE HRTERISTIS B V Reverse Breakdown Voltage I R = m 3 V I R Reverse Leakage V R = 3 V.5 m Forward Voltage I F =. 28 mv THERML HRTERISTIS I F = 3 42 I F = 6 5 R θj Thermal Resistance, Junction-to-mbient (Note a) 78 /W R θj Thermal Resistance, Junction-to-ase (Note ) 4 /W Notes:. R θj is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θj is guaranteed by design while R θ is determined by the user's board design. a. 78 O /W on a.5 in 2 pad of 2oz copper. b. 25 O /W on a.2 in 2 pad of 2oz copper. c. 35 O /W on a.3 in 2 pad of 2oz copper. Scale : on letter size paper 2. Pulse Test: Pulse Width < 3µs, uty ycle < 2.%. FFS6N33 Rev. 3

3 S Typical Electrical haracteristics I, RIN-SOURE URRENT () V =V GS 6.V 5.V 4.5V 4.V 3.5V 5 3.V V S, RIN-SOURE VOLTGE (V) R S(ON), NORMLIZE RIN-SOURE ON-RESISTNE V = 4.V GS 4.5V 5.V 6.V 7.V I, RIN URRENT () V Figure. On-Region haracteristics. Figure 2. On-Resistance Variation with rain urrent and Gate Voltage. R S(ON), NORMLIZE RIN-SOURE ON-RESISTNE I = 6 V GS = V T, JUNTION TEMPERTURE ( ) J R S(ON), ON-RESISTNE (OHM) T = V GS, GTE TO SOURE VOLTGE (V) I = 3 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. I, RIN URRENT () V S = 5V T = -55 I, REVERSE RIN URRENT () 3... V GS = V T = V, GTE TO SOURE VOLTGE (V) GS V S, BOY IOE FORWR VOLTGE (V) Figure 5. Transfer haracteristics. Figure 6. Body iode Forward Voltage Variation with Source urrent and Temperature. FFS6N33 Rev. 3

4 R F Typical Fet nd Schottky Electrical haracteristics V GS, GTE-SOURE VOLTGE (V) I = 6. V S= 5V 5V Q g, GTE HRGE (n) V PITNE (pf) 5 2 f = MHz V GS = V V, RIN TO SOURE VOLTGE (V) S iss oss rss Figure 7. Gate harge haracteristics. Figure 8. apacitance haracteristics. I, FORWR URRENT () T = J I, REVERSE URRENT ().... T = J , FORWR VOLTGE (V) V R, REVERSE VOLTGE (V) Figure 9. Schottky iode Forward Voltage. Figure. Schottky iode Reverse urrent. r(t), NORMLIZE EFFETIVE TRNSIENT THERML RESISTNE = Single Pulse t, TIME (sec) P(pk) R θj (t) = r(t) * R θj R θj =35 /W t t 2 T J - T = P * R θj (t) uty ycle, = t /t2 Figure. Transient Thermal Response urve. Thermal characterization performed using the conditions described in note c. Transient thermal response will change depending on the circuit board design. FFS6N33 Rev. 3

5 TREMRKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. Ex ctiverray Bottomless oolfet ROSSVOLT OME EcoSPRK E 2 MOS TM EnSigna TM FT ISLIMER FIRHIL SEMIONUTOR RESERVES THE RIGHT TO MKE HNGES WITHOUT FURTHER NOTIE TO NY PROUTS HEREIN TO IMPROVE RELIBILITY, FUNTION OR ESIGN. FIRHIL OES NOT SSUME NY LIBILITY RISING OUT OF THE PPLITION OR USE OF NY PROUT OR IRUIT ESRIBE HEREIN; NEITHER OES IT ONVEY NY LIENSE UNER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLIY FIRHIL S PROUTS RE NOT UTHORIZE FOR USE S RITIL OMPONENTS IN LIFE SUPPORT EVIES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN PPROVL OF FIRHIL SEMIONUTOR ORPORTION. s used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PROUT STTUS EFINITIONS efinition of Terms FT Quiet Series FST FSTr FRFET GlobalOptoisolator GTO HiSe I 2 Impliedisconnect ISOPLNR cross the board. round the world. The Power Franchise Programmable ctive roop LittleFET MIROOUPLER MicroFET MicroPak MIROWIRE MSX MSXPro OX OXPro OPTOLOGI OPTOPLNR PMN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series Rapidonfigure Rapidonnect SILENT SWITHER SMRT STRT SPM Stealth SuperSOT critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. atasheet Identification Product Status efinition SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TINYOPTO TruTranslation UH UltraFET VX dvance Information Preliminary No Identification Needed Formative or In esign First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5

6 Mouser Electronics uthorized istributor lick to View Pricing, Inventory, elivery & Lifecycle Information: Fairchild Semiconductor: FFS6N33

FDFS6N548 Integrated N-Channel PowerTrench MOSFET and Schottky Diode

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