Susceptibility of TTL Logic Devices to Narrow-band High Power Electromagnetic Threats

Transcription

1 PIERS ONLINE, VOL. 5, NO. 8, Susceptibility of TTL Logic Devices to Narrow-band High Power Electromagnetic Threats Joo-Il Hong 1, Sun-Mook Hwang 1, Kwang-Yong Kim 1, Chang-Su Huh 1, Uk-Youl Huh 1, and Jin-Soo Choi 2 1 Department of Electrical Engineering, INHA University, Incheon, Korea 2 Agency for Defense Development, Daejeon, Korea Abstract The aim of this paper is to investigate the damage effects of TTL AND and NAND logic devices manufactured using five different technologies under narrow-band high power electromagnetic (NB-HPEM) waves by magnetron. The output of the magnetron was controlled from to 1 kw and the operating frequency was narrow-band at 24 ± MHz. NB-HPEM waves were propagated into a closed-ended standard rectangular waveguide (WR-3) for 1 s. NB- HPEM waves were coupled with a directional coupler probe and the device under tests (DUTs) were placed under the probe. DUTs for the malfunction and destruction test setup were used for a light-emitting diode (LED) circuit and LEDs were used as loads to observe the operating states of the device. The TTL logic devices showed two types of damage i) malfunction, which means that no physical damage occurred in the device and after a self-reset or power-reset, the device returned to normal function, and ii) destruction, which means that the device incurred physical damage, and operation could not be recovered without replace by a new device. When the devices were damaged, the logic output of the TTL gate was connected to ground voltage (pulled down). The surfaces of the destroyed TTL logic devices were removed and the chip conditions were investigated with a microscope. The microscopic analysis of the damaged devices showed component, onchipwire and bondwire destruction such as breakthroughs and melting due to thermal effects. 1. INTRODUCTON The rapid development of digital and semiconductor technology made it possible to produce the miniaturized electronic apparatus and equipment with composite, high speed, and low voltage features based on the advanced and complicated circuit technology [1 3]. Modern electronic devices have come into family, industry, and military use widely However, malfunction of such electronic devices in one of these areas could lead to casualties and economic disasters. The electromagnetic environment can disturb electronic devices to object operate rightly. As such, the susceptibility of electronic devices to electromagnetic environment such as electromagnetic pulse (EMP), ultra wideband (UWB) high power microwave (HPM) and high power electromagnetic waves (HPEM) is a topic that has warranted much attention [1 7]. The damage of electronic devices is determined by the amount of energy that is transferred while the electronic devices are coupled by electromagnetic environment. Coupling is a kind of mechanism whereby electromagnetic energy is delivered to device under test (DUT) through a circuit line or lead frame on the devices directly. Coupled voltage and current can cause a malfunction or destruction of electronic devices. For such cases, the analysis of electromagnetic environment is therefore necessary. The goal of this investigation is to analyze the influence of digital IC devices on the damage effects by high power electromagnetic waves. 2. EXPERIMENTAL It is very difficult and dangerous to investigate the damage effects of electronic devices by high power and high frequency. The magnetron was the high power and high frequency electromagnetic waves oscillator which was used initially in early radar systems. We used a magnetron as an intentional high power electromagnetic waves source, because it is easy to control the output and it can generate high frequency and high output power [2 5]. The output of the magnetron was controlled from to 1 kw and the operating frequency was narrow-band at 24± MHz. Narrowband high power electromagnetic (NB-HPEM) waves were propagated into a closed-ended standard rectangular waveguide (WR-3) for 1 s as shown in Fig. 1(a). NB-HPEM waves were coupled with a directional coupler probe and the devices under tests (DUTs) were placed under the probe During

2 PIERS ONLINE, VOL. 5, NO. 8, the investigations five different TTL technologies (schottky, low power schottky, advanced schottky, advanced low power schottky, and Fairchild advanced schottky) were tested as shown in Table 1. DUTs for the malfunction and destruction test setup were used for the LED circuit. LEDs were used as loads to observe the operating states of the device as shown in Fig. 1(b). The DUTs contain quadruple 2-input AND or NAND gates, as shown in Fig. 1(c). To describe peak electric field in the WR-3 waveguide and the different failure effects two quantities have been defined [2, 3, 6, 7]. The malfunction failure rate (MFR) and destruction failure rate (DFR) behaves in principle as shown in Fig. 2. The electrical characteristics before and after NB-HPEM waves expose such as input and output voltage of the gates respectively, and supply current were measured. Destructed digital IC devices were removed these surface (decapsulation) and a chip conditions were analyzed by an optical microscope. 3. TEST RESULTS The TTL logic devices showed two types of damage by NB-HPEM waves. One is malfunction, which means that no physical damage occurred in the device and after a self-reset or powerreset, the device returned to normal function, and the other is destruction, which means that the device incurred physical damage, and operation could not be recovered without replace by a new Figure 1: Damage effects of digital IC devices by NB-HPEM waves test setup: (a) NB-HPEM system setup; (b) LED circuit; and (c) logic diagram. Table 1: Tested TTL logic devices built using three different technologies. IC Processing Technology TTL Technology Manufacturer Package Logic Type Part code Schottky (S) SN74S8N Low Power Schottky (LS) SN74LS8N Advanced Schottky (AS) AND SN74AS8N Advanced Low Power Schottky (ALS) SN74ALS8N Fairchild Advanced Schottky (F) Texas SN74F8N DIP Schottky (S) Instruments SN74SN Low Power Schottky (LS) Advanced Schottky (AS) Advanced Low Power Schottky (ALS) Fairchild Advanced Schottky (F) NAND SN74LSN SN74ASN SN74ALSN SN74FN

3 PIERS ONLINE, VOL. 5, NO. 8, device. When the devices were damaged, the logic output of the TTL gate was connected to ground voltage (pulled down). Fig. 3 shows the MFRs and DFRs of TTL IC devices built using five different technologies. Each point is an average value for 1 times tested at the electric field strength respectively. By increasing the electric fields, the F, S, and ALS series of TTL AND and S, LS, and ALS series of TTL NAND devices underwent reversible malfunctions, which could be reversed by switching the power off and on or by self reset. However, only the AS and LS series of TTL AND and F, S, and AS series of TTL NAND devices underwent reversible malfunctions and experienced permanent destruction at much higher fields. (a) (b) Figure 2: Principle behavior of malfunction failure rate and destruction failure rate: (a) Malfunction failure rate; (b) Destruction failure rate. MFR [%] MFR [%] 2 1 SN74F8N SN74S8N SN74AS8N SN74LS8N SN74ALS8N SN74FN SN74SN SN74ASN SN74LSN SN74ALSN (a) MFR of TTL AND devices (c) MFR of TTL NAND devices DFR [%] DFR [%] 2 1 SN74F8N SN74S8N SN74AS8N SN74LS8N SN74ALS8N SN74FN SN74SN SN74ASN SN74LSN SN74ALSN (b) DFR of TTL AND devices (d) DFR of TTL NAND devices Figure 3: Malfunction and destruction failure rate of TTL logic devices under NB-HPEM waves by magnetron.

4 PIERS ONLINE, VOL. 5, NO. 8, Destructed TTL logic devices were removed their surface and a chip conditions were analyzed by a microscope as shown in Fig. 4. Destructed devices generally show three different damaging effects [2, 3, 6, 7]. At lower field strengths only electronic components like diodes or transistors on the chip, mostly as a result of flashover effects. If the amplitude of field strengths increases, additional onchipwire destructions and multiple component destructions occurred. Further increase of the amplitude leads to additional bondwire destructions and multiple component and onchipwire destruction. The coupling NB-HPEM waves are converted into a current, which rapidly flows into the chip. Consequently, the current causes thermal damages, such as onchipwire and bondwire melting, and as a result the devices undergo immediate destruction. (a) Before component destruction (b) After component destruction (c) Before onchipwire destruction (d) After onchipwire destruction (e) Before bondwire destruction (f) After bondwire destruction Figure 4: Destructive effects of before and after NB-HPEM waves exposure on chip level: (a) and (b) SN74S8N; (c) and (d) SN74ALS8N; (e) and (f) SN74FN. 4. CONCLUSION The main goal of this study was to examine the susceptibility levels of digital IC devices, the process of malfunction, and the effects of damage. Investigation of the susceptibility of TTL IC AND and NAND devices to NB-HPEM waves by magnetron showed that the susceptibility of TTL IC devices varies between different technologies (S-TTL, LS-TTL, AS-TTL, ALS-TTL, and F-TTL). The microscopic analysis of the destroyed devices generally shows three different damaging effects (multiple electronic component, onchipwire, bondwire and bond-pad destructions) due to an increase in the current flow at a particular point in the junction in order to accommodate additional stress on the device. The tested results will be applied to the fundamental data which interprets the combination mechanism of digital IC devices from electromagnetic environment and are expected to the data which understand electromagnetic wave effects of electronic devices. ACKNOWLEDGMENT Author(s) are gratefully acknowledging the financial support by Agency for Defense Development. REFERENCES 1. Kim, S. H., J. Y. Nam, K. I. Ouh, S. J. Hong, and C. B. Rim, Analysis of coupling mechanism and solution for EFT noise on semiconductor device level, Proceedings of the International Conference on Electromagnetic Interference and Compatibility, New Delhi, India, Hwang, S. M., J. I. Hong, and C. S. Huh, Characterization of the susceptibility of integrated circuits with induction caused by high power microwaves, Progress In Electromagnetics Reserarch, PIER 81, 61 72, 28.

5 PIERS ONLINE, VOL. 5, NO. 8, Hong, J. I., S. M. Hwang, and C. S. Huh, Susceptibility of microcontroller devices due to coupling effects under narrow-band high power electromagnetic waves by magnetron, Journal of Electromagnetic Waves and Applications, Vol. 22, , Giri, D. V., High-power Electromagnetic Radiators Nonlethal Weapons and Other Applications, Harvard University Press, Cambridge, Massachusetts, and London, England, Taylor, C. D. and D. V. Giri, High-power Microwave Systems and Effects, Tayloer & Francis, Washington D.C., Giri, D. V. and F. M. Tesche, Classification of intentional electromagnetic environments (IEME), IEEE Transaction on Electromagnetic Compatibility, Vol. 46, No. 3, , Camp, M., H. Garbe, and D. Nitsch, UWB and EMP susceptibility of modern electronics, 21 IEEE International Symposium on Electromagnetic Compatibility, Vol. 2, , 21.