Table of Contents. Microwave DIODES TRANSISTORS
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1 Microwave Table of Contents DIODES Mircowave Schottky Diodes Zero bias Schottky Diodes Microwave Schottky Ring Quads General Purpose Schottky Diodes Monolithic Schottky Bridge Quad Diodes GaAs Schottky Mixer Diodes PIN Diodes Series PIN Switching Elements Step Recovery Diodes Abrupt Tuning Diodes Hyperabrupt Tuning Varactor Diodes Microwave Tunnel Diodes Sampling Phase Detectors MIS Chip Capacitors TRANSISTORS MP4T243 Silicon Bipiolar High ft Low Noise Medium Power 12 Volt Transistors MP4T56800 Medium Power, 12 Volt, High ft NPN Silicon Bipolar Transistor MP4T6825 Low Current 8 Volt, Low Noise High ft Silicon Transistor MP4T856 Moderate Power High ft NPN Silicon Transistor MP4T645 Silicon Bipolar High ft Low Noise Microwave Transistors MP4T3243 Bipolar High ft Low Voltage NPN Silicon Transistors MP4T Volt Low Noise High ft Silicon Transistor MP4T Volt General Purpose Low Noise High ft Silicon Transistor MP4T6365 Low OperatingVoltage, High ft Bipolar Microwave Transistors MP42001 Silicon Bipolar Low Noise Microwave Transistors PACKAGE DIMENSIONS D I O D E S T R A N S I S T O R S P K G S M-pulse Microwave 576 Charcot Avenue, San Jose, California (408) Fax (408)
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73 Microwave Techniques for Hybrid Assembly M-pulse Microwave offers chip components which are intended for microwave hybrid assembly. These chip components are supplied in waffle or gel packages that must be opened with care. It is recommended that a vacuum pickup be used for removing the chip component from the waffle package. CAUTION: The vacuum needle must be sufficiently small to avoid possible passage of the chip into the needle. If a vacuum pickup is not available, the die can be picked up by using very sharp tweezers or a sharpened wooden stick dipped in alcohol. For higher than ambient room temperatures the vacuum pickup or tweezers is recommended. Die Attachment The recommended method for attaching chip components for high reliability and high power devices is with a eutectic solder preform such as Au/Sn (80%/20%) in a reducing atmosphere (N 2 +H 2 Forming gas). For some applications, such as experimental work or heat sensitive devices such as Tunnel or Back diodes, the recommended die attachment medium is EPO-TEK H31D Single Component from Epoxy Technologies Inc., or equivalent. Eutectic Preform Die Attachment Place the substrate on a heater strip, a hot plate, or use other means that will provide the necessary heat for the required time. For Au/Sn (80%/20%) the temperature and time to be applied to the chip component should be 300 C for 5 seconds. If other preforms such as Au/Ge (88%/12%), the temperature and time may have to be arrived at by experimentation, or by following the vendor s recommended schedule. When the preform has melted, place the chip component on top of the melted preform and lightly scrub to assure solder flow onto the chip backing. Remove the substrate from the heat source as soon as the die attachment has been completed. Extended exposure to extremes in temperature versus time may cause component degradation or failure. Conductive Epoxy Die Attachment Place a small amount of conductive epoxy (EPO-TEK H31D) onto the substrate where the chip component is to be attached. The exact amount of epoxy to be used may be determined by experimantation. Place the chip component on the epoxy and press the chip flat onto the substrate. This will result in some of the epoxy oozing out on the sides of the chip. This is acceptable providing the epoxy does not creep up the side of the chip, contaminate the face of the chip and interfere with the junction contacts. Bake the substrate assembly in a oven at 150 C for 1 hour or any other curing schedule that does t exceed the storage temperature limit of the chip or component. D I O D E S T R A N S I S T O R S P K G S M-pulse Microwave 576 Charcot Avenue, San Jose, California (408) Fax (408)
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80 Microwave Background Founded in 1987, M-pulse Microwave has been and continues to be a technological leader and innovator in the RF and microwave semiconductor industry. Located in two custom designed manufacturing facilities covering 15,000 square feet in San Jose, CA, M-pulse manufactures and processes Silicon and GaAs diodes for medical, commercial, consumer and defense applications. M-pulse specializes in custom and semi-custom applications and is noted for our quick response ability. In 1998, M-pulse Microwave aquired M/A-Com s silicon, small-signal bipolar transistor line. This Guide This Guide lists all of the standard products offered by M-pulse Microwave as of this printing. This guide is divided into product sections and are tabbed for easy location. Product information in this guide is current and accurate at the time of printing, M-pulse reserves the right to update, modify and/or correct any information presented herein. How to Order Orders may be placed with any of our local Manufacturers Representatives (call for list) or placed directly with the factory at: M-pulse Microwave 576 Charcot Avenue San Jose, CA Tel: (408) Fax: (408) Sales@mpulsemw.com Web: FSCM: 0C7W7 Terms and Conditions The minimum order accepted by M-pulse is $ per line-item. Payment is due 30 days after date of shipment. Shipments are billed F.O.B. San Jose, CA. Warranty M-pulse Microwave devices are warranted against defects in material and workmanship for a period of one year from the date of shipment. M-pulse will repair or, at its option, replace devices that prove to be defective under proper use during the warranty period. Returns must be authorized by and routed through the Sales Department. Complete information regarding original P.O. number, date of purchase and reason for return are helpful in expediting a quick turn-around. NO OTHER WARRANTIES ARE EXPRESSED OR IMPLIED. M-PULSE MICRO WAVE SPECIFICALLY DISCLAIMS THE IMPLIED WARRANTIES OF MERCHANT ABILITY AND FITNESS FOR A PARTICULAR PURPOSE. THE REMEDIES PROVIDED HEREIN ARE THE BUYER S SOLE AND EXCLUSIVE REMEDIES. M-PULSE MICROWAVE SHALL NOT BE LIABLE FOR ANY DIRECT, INDIRECT, SPECIAL, INCIDENTAL OR CONSEQUENTIAL DAMAGES, WHETHER BASED ON CONTRACT TORT OR ANY OTHER LEGAL THEORY. 80 M-pulse Microwave 576 Charcot Avenue, San Jose, California (408) Fax (408)
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1 Typical Applications This attenuator is ideal for use as a VVA for DC - 2 GHz applications: Point-to-Point Radio VSAT Radio Functional Diagram v4.18 ATTENUATOR, DC - 2 GHz Features Wide Bandwidth: DC
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Typical Applications The is ideal for: Features 1. LSB Steps to 31 Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications Functional Diagram 11 3 4 5 6
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Typical Applications Functional Diagram v.97 The HMC is ideal for use as a LNA or driver amplifi er for : Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military &
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v3.917 Typical Applications Features The HMC17 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
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v3.13 HMC9 Typical Applications The HMC9 is ideal for use as either a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Functional Diagram Features Noise
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v.89 4 ANALOG PHASE SHIFTER Typical Applications The is ideal for: Fiber Optics Military Test Equipment Features Wide Bandwidth: Phase Shift: >4 Single Positive Voltage Control Small Size: 2. x 1.6 x.1
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More informationFeatures. = +25 C, Vdd= 5V, Idd= 60 ma*
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More informationFeatures. = +25 C, With Vdd = +5V & Vctl = 0/+5V (Unless Otherwise Noted)
Typical Applications The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Space Applications Functional Diagram v2.97.5 db LSB GaAs MMIC 6-BIT DIGITAL
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Design Assistance Assembly Assistance Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming Customised Pack Sizes / Qtys Support for all industry recognised
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